Page 1
Features
• Low on-resistance
R
= 0. 2Ω typ. (VGS = 4 V, ID = 100 mA)
DS(on)
• 2.5V gate drive devices.
• Small package (MPAK)
Outline
2SK2802
Silicon N Channel MOS FET
Low Frequency Power Switching
ADE-208-537C (Z)
4th. Edition
Jun 1998
MPAK
G
3
1
D
S
2
1. Source
2. Gate
3. Drain
Page 2
2SK2802
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Channel dissipation Pch
DSS
GSS
D
D(pulse)
Note1
Note2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown
V
(BR)DSS
voltage
Gate to source breakdown
V
(BR)GSS
voltage
Zero gate voltege drain
I
DSS
current
Gate to source leak current I
Gate to source cutoff voltage V
Static drain to source on state
R
GSS
GS(off)
DS(on)
resistance
Static drain to source on state
R
DS(on)
resistance
Forward transfer admittance |yfs| 0.7 1.2 — S ID = 250 mA
Input capacitance Ciss — 14.0 — pF VDS = 10V
Output capacitance Coss — 68 — pF VGS = 0
Reverse transfer capacitance Crss — 3.0 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
d(on)
r
d(off)
f
Note: 2. Pulse test
3. Marking is “ZV–”
30——V I
±10——V I
— — 1.0 µAV
——±10 µAV
0.5 — 1.5 V ID = 10µA, VDS = 5V
— 0.2 0.28 Ω ID = 100 mA
— 0.3 0.5 Ω ID = 40 mA
— 0.27 — µsV
— 1.5 — µsR
— 2.2 — µs
— 2.15 — µs
30 V
±10 V
0.5 A
1.0 A
150 mW
= 100µA, VGS = 0
D
= ±100µA, VDS = 0
G
= 30 V, VGS = 0
DS
= ±6.5V, VDS = 0
GS
V
= 4V
GS
V
= 2.5V
GS
V
= 10V
DS
= 4V, ID = 250 mA
GS
= 40Ω
L
Note2
Note2
Note2
2
Page 3
Main Characteristics
2SK2802
200
Power vs. Temperature Derating
150
100
50
Channel Dissipation Pch (mW)
0
50 100 150 200
Ambient Temperature Ta (°C)
Typical Output Characteristics
2 V
4 V
0.5
Maximum Safe Operation Area
5
2
1
0.5
D
0.2
0.1
0.05
0.02
Operation in
0.01
0.005
0.002
0.001
this area is
limited by R
Ta = 25 °C
0.05
0.1 1
DS(on)
0.2 0.5 2 5 20
Drain Current I (A)
0.0005
Drain to Source Voltage V (V)
Typical Transfer Characteristics
0.5
PW = 10 ms
(1 shot)
DC Operation
1 ms
10
DS
50
0.4
D
0.3
0.2
Drain Current I (A)
0.1
0
246810
Drain to Source Voltage V (V)
1.8 V
Pulse Test
1.6 V
V = 1.4 V
GS
DS
0.4
25°C
75°C
D
0.3
Tc = –25°C
0.2
Drain Current I (A)
0.1
0
12345
Gate to Source Voltage V (V)
V = 10 V
DS
Pulse Test
GS
3
Page 4
2SK2802
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.20
Pulse Test
0.16
DS(on)
V (V)
0.12
0.08
0.04
I = 0.2 A
D
Drain to Source Saturation Voltage
0
24
6
Gate to Source Voltage V (V)
Static Drain to Source on State Resistance
vs. Temperature
0.5
W
I = 0.1 A, 0.2 A
D
0.4
DS(on)
V = 2.5 V
0.3
0.2
GS
0.1 A, 0.2 A
R ( )
4 V
0.1
0
Static Drain to Source on State Resistance
–40 0 40 80 120 160
Pulse Test
Case Temperature Tc (°C)
Static Drain to Source on State Resistance
5
2
1
DS(on)
R ( )W
0.5
0.2
0.1 A
0.1
Drain to Source On State Resistance
0.05
8 10 0.1 0.50.2
GS
Drain Current I (A)
Forward Transfer Admittance vs.
5
V = 10 V
Pulse Test
2
DS
fs
1
0.5
0.2
0.1
Forward Transfer Admittance |y | (S)
0.05
0.01 0.02 0.05 0.1 0.2 0.5
Drain Current I (A)
vs. Drain Current
V = 2.5 V
GS
Drain Current
Tc = –25 °C
25 °C
75 °C
D
Pulse Test
4 V
1
D
4
Page 5
Typical Capacitance vs.
Drain to Source Voltage
500
200
100
V = 0
GS
f = 1 MHz
Coss
50
20
Ciss
10
Capacitance C (pF)
5
Crss
2
1
048121620
Drain to Source Voltage V (V)
DS
10000
Switching Characteristics
t
3000
1000
300
d(off)
t
f
t
r
t
d(on)
100
Switching Time t (ns)
30
10
V = 4 V, V = 10 V
GS
DD
PW = 5 µs, duty < 1 %
0.05 1
Drain Current I (A)
D
2SK2802
0.50.20.1
Reverse Drain Current vs.
Source to Drain Voltage
0.5
0.4
DR
0.3
5 V
V = 0
GS
0.2
0.1
Reverse Drain Current I (A)
0
0.4 0.8 1.2 1.6 2.0
Pulse Test
Source to Drain Voltage V (V)
SD
5
Page 6
2SK2802
Switching Time Test Circuit Waveform
Vin Monitor
Vin
4 V
50W
D.U.T.
R
L
V
DD
= 10 V
Vout
Monitor
Vin
Vout
10%
10%
90%
10%
td(on)
90%
tr
90%
td(off)
t
f
6
Page 7
Package Dimensions
0.4
0.95
0.95
1.9
+ 0.3
2.8
– 0.1
+ 0.10
– 0.05
+ 0.1
+ 0.1
0.65
0.3
– 0.3
0.65
1.5
– 0.3
+ 0.2
+ 0.2
– 0.6
2.8
– 0.1
1.1
0.16
0 ~ 0.15
+ 0.10
– 0.06
Hitachi Code
EIAJ
JEDEC
2SK2802
Unit: mm
MPAK
SC–59A
TO–236Mod.
7
Page 8
Cautions
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