Datasheet 2SK2737 Datasheet (HIT)

Features

• Low on-resistance

R

= 10 mΩ typ.

DS(on)

• 4V gate drive devices.

• High speed switching

Outline

2SK2737

Silicon N Channel MOS FET
High Speed Power Switching

ADE-208-533B(Z)

3rd. Edition

Jun 1998

TO–220CFM

G

D

1

2

3

S

1. Gate

2. Drain

3. Source

2SK2737

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Channel dissipation Pch

DSS

GSS

D

D(pulse)

DR

Note1

Note2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V
Gate to source breakdown voltage V
Gate to source leak current I
Zero gate voltege drain current I
Gate to source cutoff voltage V
Static drain to source on state

(BR)DSS

(BR)GSS

GSS

DSS

GS(off)

R

DS(on)

resistance
Static drain to source on state

R

DS(on)

resistance
Forward transfer admittance |yfs| 2030—S ID = 20A, VDS = 10V
Input capacitance Ciss — 1570 — pF VDS = 10V
Output capacitance Coss — 1100 — pF VGS = 0
Reverse transfer capacitance Crss — 410 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward voltage V
Body–drain diode reverse

t

d(on)

r

d(off)

f

DF

rr

recovery time
Note: 3. Pulse test

30——V I
±20——V I
——±10 µAVGS = ±16V, VDS = 0
——10µAVDS = 30 V, VGS = 0

1.0 — 2.0 V ID = 1mA, VDS = 10V
—1014mΩID = 20A, VGS = 10V

—1525mΩID = 20A, VGS = 4V

— 32 — ns VGS = 10V, ID = 20A
— 300 — ns RL = 0.5Ω
— 180 — ns
— 200 — ns
— 1.0 — V IF = 45A, VGS = 0
— 75 — ns IF = 45A, VGS = 0

30 V
±20 V
45 A
180 A
45 A
30 W

= 10mA, VGS = 0

D

= ±100µA, VDS = 0

G

diF/ dt = 50A/µs

Note3

Note3

Note3

Note3

2

Main Characteristics

2SK2737

Power vs. Temperature Derating

40

30

20

10

Channel Dissipation Pch (W)

0

50 100 150 200

Case Temperature Tc (°C)

Typical Output Characteristics

10 V

8 V

100

6 V

80

D

5 V

60

Pulse Test

4.5 V
4 V

500

Maximum Safe Operation Area

200
100

D

50

20

DC Operation (Tc = 25°C)

10

Operation in

5
2

1

0.5

this area is
limited by R

Ta = 25 °C

Drain Current I (A)

0.1 0.3 1
Drain to Source Voltage V (V)

Typical Transfer Characteristics

100

Tc = –25°C

80

D

60

10 µs

100 µs

PW = 10 ms (1shot)

DS(on)

1 ms

3

10

DS

25°C
75°C

30

100

40

Drain Current I (A)

20

0

246810

Drain to Source Voltage V (V)

3.5 V

3 V

V = 2.5 V

GS

DS

40

Drain Current I (A)

20

0

246810

Gate to Source Voltage V (V)

V = 10 V

DS

Pulse Test

GS

3

2SK2737

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

1.0
Pulse Test

0.8

DS(on)

V (V)

0.6

I = 50 A

D

0.4

0.2

20 A
10 A

Drain to Source Saturation Voltage

0

48

Gate to Source Voltage V (V)

12

16 20 1 10 100250

GS

Static Drain to Source on State Resistance

vs. Temperature

50

W

Pulse Test

40

DS(on)

R (m )

30

I = 20 A

D

20

V = 4 V

GS

10

10 V

10, 20 A

0

Static Drain to Source on State Resistance

–40 0 40 80 120 160

Case Temperature Tc (°C)

10 A

50 A

Static Drain to Source on State Resistance

vs. Drain Current

100

Pulse Test

W

50

DS(on)

R (m )

20

10

Drain to Source On State Resistance

5

V = 4 V

GS

10 V

205

Drain Current I (A)

D

Forward Transfer Admittance vs.

Drain Current

50

fs

20

10

Tc = –25 °C

25 °C

5

75 °C

2

1

Forward Transfer Admittance |y | (S)

0.5

0.1

0.3 1 3 10
Drain Current I (A)

V = 10 V

DS

Pulse Test

D

30

100

4

2SK2737

Body–Drain Diode Reverse

Recovery Time

1000

500

200

100

50

20

Reverse Recovery Time trr (ns)

10

di / dt = 50 A / µs
V = 0, Ta = 25 °C

GS

0.1 0.3 1 3 10 30 100
Reverse Drain Current I (A)

DR

Dynamic Input Characteristics

50

I = 45 A

D

40

DS

30

V

V

DS

GS

V = 5 V

DD

20

10

Drain to Source Voltage V (V)

0

V = 15 V

DD

10 V

5 V

20 40 60 80 100

Gate Charge Qg (nc)

10 V
15 V

Typical Capacitance vs.
Drain to Source Voltage

10000

5000

2000
1000

500

Capacitance C (pF)

200
100

50

01020304050

Drain to Source Voltage V (V)

Switching Characteristics

20

16

1000

500

GS

t

200

12

100

8

4

50

Switching Time t (ns)

20

Gate to Source Voltage V (V)

0

10

0.1 0.3 3 10 100
Drain Current I (A)

Ciss

Coss

Crss

V = 0

GS

f = 1 MHz

DS

d(off)

t

f

t

r

t

d(on)

V = 10 V, V = 10 V

GS

DD

PW = 5 µs, duty < 1 %

301

D

5

2SK2737

Reverse Drain Current vs.

Source to Drain Voltage

100

3

s (t)

1

g

0.3

D = 1

0.5

80

DR

10 V
5 V

60

V = 0, –5 V

GS

40

20

Reverse Drain Current I (A)

0

0.4 0.8 1.2 1.6 2.0

Source to Drain Voltage V (V)

Pulse Test

SD

Normalized Transient Thermal Impedance vs. Pulse Width

Tc = 25°C

0.2

q g q

0.1

0.1

0.05

0.03

Normalized Transient Thermal Impedance

0.01
10 µ

0.02

0.01

1shot pulse

100 µ 1 m 10 m

ch – c(t) = s (t) • ch – c

q

ch – c = 4.17 °C/W, Tc = 25 °C

P

DM

PW

T

D =

100 m 1 10

PW

T

Pulse Width PW (S)

6

Switching Time Test Circuit Waveform

2SK2737

Vin Monitor

Vin
10 V

50W

D.U.T.

R

L

V

DD

= 10 V

Vout
Monitor

Vin

Vout

td(on)

10%

10%

90%

tr

90%

td(off)

90%

10%

t

f

7

2SK2737

Package Dimensions

Unit: mm

1.0 ± 0.2

1.15 ± 0.2

0.6 ± 0.1

2.54 ± 0.5

10.0 ± 0.3

f

3.2 ± 0.2

4.1 ± 0.3 12.0 ± 0.3

2.54 ± 0.5

4.45 ± 0.3

2.5 ± 0.2

2.7 ± 0.2

13.6 ± 1.0

0.7 ± 0.1

15.0 ± 0.3

Hitachi Code

EIAJ

JEDEC

TO–220CFM

—
—

8

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.

Hitachi, Ltd.

Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo [phone] Fax: [phone]

URL NorthAmerica : http:semiconductor.hitachi.com/

For further information write to:

Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> [phone]
Fax: <1>[phone]

Europe : http://www.hitachi-eu.com/hel/ecg
Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan : http://www.hitachi.co.jp/Sicd/indx.htm

Hitachi Europe GmbH
Electronic components Group
Dornacher Stra§e 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00

Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322

Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: [phone]
Fax: [phone]

Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180

Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.

Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX