Datasheet 2SK2736 Datasheet (HIT)

Features

• Low on-resistance

R

= 20 mΩ typ. (VGS = 10V, ID = 15 A)

DS(on)

• 4V gate drive devices.

• High speed switching

Outline

2SK2736

Silicon N Channel DV–L MOS FET

High Speed Power Switching

ADE-208-544

1st. Edition

TO–220CFM

G

D

1

2

3

S

1. Gate

2. Drain

3. Source

2SK2736

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*

DSS

GSS

D

D(pulse)

DR

1

*

2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

30 V
±20 V
30 A
120 A
30 A
25 W

2

2SK2736

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown

V

(BR)DSS

30——V I

voltage
Gate to source breakdown

V

(BR)GSS

±20——V I

voltage
Zero gate voltege drain

I

DSS

——10µAV

current
Gate to source leak current I
Gate to source cutoff voltage V
Static drain to source on state R
resistance R

GSS

GS(off)

DS(on)

DS(on)

——±10 µAV

1.0 — 2.0 V ID = 1mA, VDS = 10V
—2028mΩI

—3550mΩI
Forward transfer admittance |yfs|1218—SI
Input capacitance Ciss — 750 — pF VDS = 10V
Output capacitance Coss — 520 — pF VGS = 0
Reverse transfer capacitance Crss — 210 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward

V

d(on)

r

d(off)

f

DF

— 16 — ns VGS = 10V, ID = 15A

— 260 — ns RL = 0.67Ω

—85—ns

—90—ns

— 1.0 — V IF = 30A, VGS = 0
voltage

Body to drain diode reverse

t

rr

— 45 — ns IF = 30A, VGS = 0
recovery time

Note: 1. Pulse test

= 10mA, VGS = 0

D

= ±100µA, VDS = 0

G

= 30 V, VGS = 0

DS

= ±16V, VDS = 0

GS

= 15A, VGS = 10V*

D

= 15A, VGS = 4V*

D

= 15A, VDS = 10V*

D

diF/ dt = 50A/µs

1

1

1

See characteristics curves of 2SK2684

3

2SK2736

Main Characteristics

Power vs. Temperature Derating

40

30

20

10

Channel Dissipation Pch (W)

0

50 100 150 200

Case Temperature Tc (°C)

Normalized Transient Thermal Impedance vs. Pulse Width

3

500

Maximum Safe Operation Area

200
100

D

50
20

DC Operation (Tc = 25°C)

10

5
2

1

0.5

Operation in
this area is
limited by R

Ta = 25 °C

Drain Current I (A)

0.1 0.3 1
Drain to Source Voltage V (V)

10 µs

100 µs

PW = 10 ms (1shot)

DS(on)

1 ms

3

10

30

DS

100

s (t)

1

γ

D = 1

0.5

0.3

0.2

0.1

0.03

Normalized Transient Thermal Impedance

0.01
10 µ

0.1

0.05

0.02

0.01

1shot pulse

100 µ 1 m 10 m

4

θ γ θ

ch – c(t) = s (t) • ch – c

θ

ch – c = 5.0 °C/W, Tc = 25 °C

P

DM

Pulse Width PW (S)

Tc = 25°C

PW

D =

T

PW

T

100 m 1 10

Switching Time Test Circuit Waveform

2SK2736

Vin Monitor

Vin
10 V

50Ω

D.U.T.

R

L

V

DD

= 10 V

Vout
Monitor

Vin

Vout

td(on)

10%

10%

90%

tr

90%

td(off)

90%

10%

t

f

5

2SK2736

Package Dimensions

Unit: mm

1.0 ± 0.2

1.15 ± 0.2

0.6 ± 0.1

2.54 ± 0.5

10.0 ± 0.3
f

3.2 ± 0.2

4.1 ± 0.3 12.0 ± 0.3

2.54 ± 0.5

4.45 ± 0.3

2.5 ± 0.2

2.7 ± 0.2

15.0 ± 0.3

13.6 ± 1.0

0.7 ± 0.1

Hitachi Code

EIAJ

JEDEC

TO–220CFM

—
—

6

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