Datasheet 2SK2530 Datasheet (SANYO)

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

Ultrahigh-Speed Switching Applications

Ordering number:ENN6406

2SK2530

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Features

· Low ON-resistance.

· Ultrahigh-speed switching.

· Low voltage drive.

Package Dimensions

unit:mm

2083B

[2SK2530]

6.5

5.0

4

0.85

0.7

0.6

1

23

2.3 2.3

0.8

2.3

1.5

5.5

1.6

0.5

7.0

1.2

7.5

0.5

2092B

[2SK2530]

6.5

5.0

1.55.5

2.3

0.5

1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP

7.0

0.85

1243

0.6

2.3 2.3

0.8

0.5

2.5

1.2

0 to 0.2

92500TS (KOTO) TA-2182 No.6406–1/4

1.2

1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA

2SK2530

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)esluP(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

egatloVnwodkaerBecruoS-ot-niarDV

egatloVnwodkaerBecruoS-ot-etaGV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatSR

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egatloVdrawroFedoiDV

emiTyrevoceResreveRedoiDt

Marking : K2530

SSD
SSG

D

d

d

WP ≤ elcycytud,sµ01 ≤ %18A

PD

D

Tc=25˚C

I

V,Am1=

SSD)RB(

D

I

SSG)RB(

G

V

SSD
SSG

r

f

DS

rr

SD

V

SG

V

)ffo(SG

SD

V

)no(SD

SG
SD
SD
SD

)no(tiucriCtseTdeificepseeS01sn

)ffo(tiucriCtseTdeificepseeS08sn

I

S

I

S

0=052V

SG
V,Aµ001±=

0=03±V

SG

V,V052=

0=0.1Am

SG

V,V52±=

0=01±Aµ

SD

I,V01=

Am1=0.20.3V

D

A1=3.19.1S

D

I,V01=

A1=5.10.2

D

zHM1=f,V02=061Fp
zHM1=f,V02=04Fp
zHM1=f,V02=51Fp

tiucriCtseTdeificepseeS31sn

tiucriCtseTdeificepseeS03sn

V,A2=

0=0.15.1V

SG

sµ/Aµ001=td/id,A2=09sn

sgnitaR

nimpytxam

052V
03±V
2A

1W
02W

˚C
˚C

tinU

Ω

Switching Time Test Circuit

V

10V

0V

PW=10µs
D.C.≤1%

P.G

IN

VDD=100V

V

IN

G

50Ω

D

ID=1A

RL=100Ω

S

V

OUT

2SK2530

No.6406–2/4

4.0

3.5

3.0

–A

2.5

D

2.0

1.5

Drain Current, I

1.0

0.5

2.8

2.4

– Ω
(on)

2.0

DS

1.6

2SK2530

I

I

-- V

D

10.0V

0

214 810635 97

Drain-to-Source Voltage, VDS–V

RDS(on) -- V

8.0V

DS

6.0V

GS

6.0

VDS=10V

5.5

5.0V

4.0V

VGS=3.5V

IT01567 IT01568

Tc=25°C
ID=1A

5.0

4.5

4.0

–A

D

3.5

3.0

2.5

2.0

Drain Current, I

1.5

1.0

0.5

3.2

2.8

2.4

– Ω
(on)

2.0

DS

1.6

1.2

00

0

ID=1A
VGS=10V

1 3456789102

Gate-to-Source Voltage, VGS–V

-- V

D

GS

25°C

°C

75°C

Tc= --25

RDS(on) -- Tc

1.2

Static Drain-to-Source

On-State Resistance, R

0.8

Gate-to-Source Voltage, V

10

7
5

3

fs|–S

2

y

1.0
7

5
3

2

0.1
7
5

3
2

Forward Transfer Admittance, |

0.01

1000

100

Switching Time, SW Time – ns

10

1.0

3
3

3
2

7
5

3
2

7
5

3
2

23 57

23 57

0.8

0.4

Static Drain-to-Source

On-State Resistance, R

10

–A

1.0

F

0.1

Forward Current, I

0.01

1000

100

Ciss, Coss, Crss – pF

10

0

--60

7
5

3
2

7
5

3
2

7
5

3
2

7
5

3
2

7
5

3
2

0

Case Temperature, Tc – ˚C

VGS=0

0.4 0.6 0.8 1.0 1.2 1.4 1.60.20

Diode Forward Voltage, VSD–V

Ciss, Coss, Crss -- V

Drain-to-Source Voltage, VDS–V

8212141661041820

y

|

fs

|

-

–V

GS

I

D

IT01569

VDS=10V

Tc= --25°C

75°C

25°C

23 57

0.1

Drain Current, ID–A

SW Time -- I

1.0

D

23 57

IT01571

100.01

VDD=100V
VGS=10V

(off)

t

d

t

f

t

r

td(on)

Drain Current, ID–A

1.00.1

23 5

IT01573

IF -- V

°C

Tc=75

10 12 14 16 18 20 22 24 26 28 304682

40--40 --20 12020 60 80 100 1601400

IT01570

SD

25°C

--25°C

IT01572

DS

f=1MHz

Ciss

Coss

Crss

IT01574

No.6406–3/4

2

10

7

IDP=8A

5
3

2

–A

D

1.0

,I

7
5

3
2

Operation in this area

0.1

Drain Current

is limited by RDS(on).

7
5

3

Tc=25°C

2

Single pulse

0.01

–W

D

23 57

30

25

20

15

A S O

100

µs

1ms

ID=2A

Drain-to-Source Voltage, VDS–V

10

P

D

10ms

DC operation

23 57

-- Tc

1001.0

2SK2530

10µs

23 5

IT01575

P

-- Ta

1.2

1.0

–W

D

0.8

0.6

0.4

0.2

D

Allowable Power Dissipation, P

0

0 20 40 60 80 100 120 140 160

Ambient Temperature, Ta – ˚C

IT01788

10

5

Allowable Power Dissipation, P

0

0 20 40 60 80 100 120 140 160

Case Temperature, Tc – ˚C

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

IT01576

This catalog provides information as of September, 2000. Specifications and information herein are
subject to change without notice.

PS No.6406–4/4