Page 1
2SD2661
Transistors
Low frequency amplifier transistor(12V, 2A)
2SD2661
zFeatures
Low V
CE(sat) ≤ 180mV
(I
C / IB = 1A / 50mA)
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
CBO
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector Power dissipation
Junction temperature
Storage temperature
∗1 PW=1ms Single Pulse
∗2 Mounted on a 40 40 0.7mm ceramic substrcte
+
+
V
VCEO
VEBO
IC
PC
Tj
Tstg
zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Limits
15
12
6
2
4
500
2
150
−55 to +150
CBO
BV
CEO
BV
EBO
BV
I
CBO
EBO
I
h
FE
CE(sat)
V
f
T
Unit
V
V
V
A(DC)
A(Pulse)
mW
∗
2
W
°C
°C
15
12
6
−−
−−
270
−
−
Cob − 20 −
zExternal dimensions (Unit : mm)
1.0
0.4
1.5
3.0
1.5
ROHM : MPT3
JEITA : SC-62
JEDEC: SOT-89
(1)
(2)
0.5
(3)
0.4
0.4
Abbreviated symbol : FW
zPackaging specifications
Package
∗
1
Type
2SD2661
Code
Basic ordering unit (pieces)
−
V
I
C
=10µA
V
I
C
=1mA
V
IE=10µA
nA VCB=15V
nA VEB=6V
− V
CE
=2V, IC=200mA
mV
IC / IB=1A / 50mA
MHz
VCE=2V, IE=−200mA, f=100MHz
V
CB
pF
=10V, IE=0A, f=1MHz
−−
−−
−−
100
100
680
−
90
180
360
4.0
2.5
0.5
4.5
1.6
1.5
(1)Base
(2)Collector
(3)Emitter
Taping
T100
1000
Rev.A 1/2
Page 2
Transistors
zElectrical characteristic curves
10
(A)
C
1
Ta=100°C
0.1
0.01
COLLECTOR CURRENT : I
0.001
0 0.5 1 1.5
BASE TO EMITTER CURRENT : V
Fig.1 Grounded emitter propagation
characteristics
Ta=25°C
Ta=−40°C
VCE=2V
Pulsed
BE
1
IC/IB=20
Pulsed
(V)
CE(sat)
0.1
Ta=100°C
0.01
COLLECTOR TO EMITTER
SATURATION VOLTAGE : V
0.001
0.001 0.01 0.1 1 10
COLLECTOR CURRENT : I
Fig.4 Base-emitter saturation voltage
vs. collector current
Ta=25°C
Ta=−40°C
C
(A)
2SD2661
1000
FE
100
DC CURRENT GAIN : h
10
0.001 0.01 0.1 1 10
(V)
Ta=100°C
Ta=25°C
Ta=−40°C
COLLECTOR CURRENT : I
C
VCE=2V
Pulsed
(A)
Fig.2 DC current gain
vs. collector current
1000
(MHz)
100
TRANSITION FREQUENCY : fT
10
−0.001 −0.01 −0.1 −1 −10
EMITTER CURRENT : I
Ta=25°C
CE
=2V
V
f=100MHz
E
(A)
Fig.5 Gain bandwidth product
vs. emitter current
1
(V)
Ta=25°C
Pulsed
CE(sat)
0.1
IC/IB=50
0.01
IC/IB=20
IC/IB=10
0.001
0.001 0.01 0.1 1 10
COLLECTOR CURRENT : I
COLLECTOR SATURATION VOLTAGE : V
Fig.3 Collector-emitter saturation voltage
vs. collector current
1000
100
10
1
EMITTER INPUT CAPACITANCE : Cib (pF)
EMITTER TO BASE VOLTAGE : V
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
COLLECTOR TO BASE VOLTAGE : V
Cib
Cob
1 10 1000.1
Fig.6 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
C
(A)
Ta=25˚C
I
E
=
0A
f=1MHz
EB
(
CB
V)
V)
(
Rev.A 2/2
Page 3
Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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