Page 1
Po wer Transistors
2SD2528
Silicon NPN epitaxial planar type
For power amplification with high forward current transfer ratio
Features
■
●
High foward current transfer ratio h
●
Satisfactory linearity of foward current transfer ratio h
●
Full-pack package which can be installed to the heat sink with
one screw
Absolute Maximum Ratings (T
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
TC=25°C
Ta=25°C
Junction temperature
Storage temperature
Symbol
V
V
V
I
CP
I
C
I
B
P
C
T
j
T
stg
CBO
CEO
EBO
FE
=25˚C)
C
Ratings
80
60
6
10
5
1
40
2.0
150
–55 to +150
FE
Unit
V
V
V
A
A
A
W
˚C
˚C
Unit: mm
9.9±0.3
φ3.2±0.1
15.0±0.513.7±0.2
1.4±0.2
1
1.6±0.2
0.8±0.1
2.54±0.3
23
5.08±0.5
TO–220D Full Pack Package
4.2±0.2
4.6±0.2
2.9±0.2
3.0±0.5
2.6±0.1
0.55±0.15
1:Base
2:Collector
3:Emitter
Electrical Characteristics (T
■
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
hFE Rank classification
Rank P Q
h
800 to 2000 500 to 1200
FE
C
Symbol
I
CBO
I
EBO
V
CEO
*
h
FE
V
CE(sat)
f
T
t
on
t
stg
t
f
=25˚C)
Conditions
VCB = 80V, IE = 0
VEB = 6V, IC = 0
IC = 25mA, IB = 0
VCE = 4V, IC = 1A
IC = 4A, IB = 0.1A
VCE = 12V, IC = 0.4A, f = 10MHz
IC = 4A, IB1 = 0.08A, IB2 = – 0.08A,
VCC = 50V
min
60
500
typ
30
0.4
2.0
0.6
max
100
100
2000
0.3
Unit
µA
µA
V
V
MHz
µs
µs
µs
1
Page 2
Po wer Transistors 2SD2528
PC—Ta IC—V
50
)
W
(
(1)
40
C
30
20
(2)
10
(3)
Collector power dissipation P
(4)
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
2
10
)
V
(
BE(sat)
10
1
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
V
BE(sat)—IC
IC/IB=50
CE
)
8
7
)
6
A
(
C
IB=10mA
5
4
3
2
Collector current I
1
0
012108264
)
Collector to emitter voltage VCE (V
9mA
6mA
hFE—I
4
10
FE
3
10
5mA
8mA
7mA
4mA
TC=25˚C
3mA
2mA
1mA
)
C
10
V
(
CE(sat)
–1
10
–2
10
–3
10
Collector to emitter saturation voltage V
300
)
100
MHz
(
T
30
V
CE(sat)—IC
1
–1
10
Collector current IC (A
fT—I
110
)
C
VCE=12V
f=10MHz
=25˚C
T
C
–1
10
Base to emitter saturation voltage V
–2
10
–1
10
Collector current IC (A
100
30
)
µs
(
10
f
,t
stg
3
,t
on
1
0.3
0.1
110
)
ton, t
, tf — I
stg
t
stg
t
f
t
on
C
Pulsed tw=1ms
Duty cycle=1%
=50 (IB1=–IB2)
I
C/IB
=50V
V
CC
T
=25˚C
C
Switching time t
0.03
0.01
082647153
Collector current IC (A
)
2
10
Forward current transfer ratio h
10
–2
10
–1
10
110
Collector current IC (A
Area of safe operation (ASO)
30
I
CP
10
)
A
I
(
C
C
3
1
0.3
Collector current I
0.1
Non repetitive pulse
=25˚C
T
C
1 3 10 30 100
Collector to emitter voltage VCE (V
10ms
1s
)
t=1ms
10
Transition frequency f
3
0.003 0.10.01 0.30.03 1 3
)
Collector current IC (A
)
2
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