Page 1
Po wer Transistors
2SD2375
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
Features
■
●
High forward current transfer ratio hFE which has satisfactory
linearity
●
Full-pack package which can be installed to the heat sink with
one screw
Absolute Maximum Ratings (T
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
TC=25°C
Ta=25°C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
=25˚C)
C
Ratings
80
60
6
6
3
1
25
2
150
–55 to +150
Unit
V
V
V
A
A
A
W
˚C
˚C
15.0±0.513.7±0.2
4.2±0.2
9.9±0.3
1
23
Unit: mm
4.6±0.2
2.9±0.2
3.0±0.5
φ3.2±0.1
1.4±0.2
1.6±0.2
0.8±0.1
2.54±0.3
5.08±0.5
TO–220D Full Pack Package
2.6±0.1
0.55±0.15
1:Base
2:Collector
3:Emitter
Electrical Characteristics (T
■
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
*
hFE Rank classification
C
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
*
h
FE
V
CE(sat)
f
T
=25˚C)
Conditions
VCB = 80V, IE = 0
VCE = 40V, IB = 0
VEB = 6V, IC = 0
IC = 25mA, IB = 0
VCE = 4V, IC = 0.5A
IC = 2A, IB = 0.05A
VCE = 12V, IC = 0.2A, f = 10MHz
min
60
500
Rank Q P
h
FE
500 to 1000 800 to 1500
Note: Ordering can be made by the common rank (PQ rank hFE = 500 to 1500) in the rank classification.
typ
50
max
100
100
100
1500
1
Unit
µA
µA
µA
V
V
MHz
1
Page 2
Po wer Transistors 2SD2375
PC—Ta IC—V
40
)
36
W
(
32
C
28
(1)
24
20
16
12
8
4
Collector power dissipation P
(2)
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
)
100
V
(
30
CE(sat)
10
3
(1) TC=Ta
(2) Without heat sink
V
CE(sat)—IC
=2W)
(P
C
IC/IB=40
=25˚C
T
C
CE
1.0
0.8
)
A
(
C
0.6
0.4
Collector current I
0.2
0
012108264
)
Collector to emitter voltage VCE (V
IB=1.0mA
hFE—I
10000
3000
FE
1000
300
TC=25˚C
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
)
C
VCE=4V
=25˚C
T
C
5
4
)
A
(
C
3
2
Collector current I
1
0
01.21.00.80.2 0.60.4
Base to emitter voltage VBE (V
1000
300
)
MHz
100
(
T
30
IC—V
fT—I
BE
C
VCE=5V
T
=25˚C
C
VCE=12V
f=10MHz
T
=25˚C
C
)
1
0.3
0.1
0.03
0.01
Collector to emitter saturation voltage V
0.01 0.1 1 100.03 0.3 3
Collector current IC (A
)
100
30
10
Forward current transfer ratio h
3
1
0.01 0.1 1 100.03 0.3 3
Collector current IC (A
Area of safe operation (ASO) R
100
30
)
10
A
I
(
CP
C
3
I
C
1
0.3
0.1
Collector current I
0.03
Non repetitive pulse
=25˚C
T
C
t=1ms
10ms
DC
3
10
)
2
10
˚C/W
(
(t)
th
10
1
–1
10
Thermal resistance R
10
3
1
Transition frequency f
0.3
0.1
0.01 0.1 1 100.03 0.3 3
)
—t
th(t)
(1) Without heat sink
(2) With a 100 × 80 × 2mm Al heat sink
Collector current IC (A
(1)
(2)
)
0.01
1 10 100 10003 30 300
Collector to emitter voltage VCE (V
2
–2
10
–4
10
)
–3
–2
10
–1
10
110
Time t (s
1010
)
2
10
3
4
10
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