Datasheet 2SD2492, 2SD2491 Datasheet (HIT)

2SD2491, 2SD2492

Silicon NPN Epitaxial

Application

Low frequency high voltage amplifier

Features

• Isolated package

TO-126FM

Outline

TO-126FM

1. Emitter

2. Collector

1

2

3

3. Base

2SD2491, 2SD2492

Absolute Maximum Ratings (Ta = 25°C)

Ratings

Item Symbol 2SD2491 2SD2492 Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
Collector power dissipation PC*

CBO

CEO

EBO

C

C

1

Junction temperature Tj 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 °C

Note: 1. Value at TC = 25°C

Electrical Characteristics (Ta = 25°C)

2SD2491 2SD2492

Item Symbol Min Typ Max Min Typ Max Unit Test conditions

Collector to base
breakdown voltage

Collector to emitter
breakdown voltage

Emitter to base
breakdown voltage

Collector cutoff current I

DC current transfer ratio h
DC current transfer ratio h
Base to emitter voltage V
Collector to emitter

saturation voltage
Gain bandwidth product f
Collector output

capacitance
Note: 1. The 2SD2491 and 2SD2492 are grouped by h

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

CBO

160 — — 200 — — V IC = 10 µA, IE = 0

160 — — 200 — — V IC = 1 mA, RBE = ∞

5——5——VIE = 10 µA, IC = 0

——10———µAVCB = 140 V, IE = 0
—————10µAVCB = 160 V, IE = 0

1

*

60 — 320 60 — 320 VCE = 5 V, IC = 10 mA
30 — — 30 — — VCE = 5 V, IC = 1 mA
— — 1.5 — — 1.5 V VCE = 5 V, IC = 10 mA
——2 ——2 V IC = 30 mA, IB = 3 mA

— 140 — — 140 — MHz VCE = 5 V, IC = 10 mA

V

FE1

FE2

BE

CE(sat)

T

Cob — 3.8 — — 3.8 — pF VCB = 10 V, IE = 0

160 200 V
160 200 V
55V
100 100 mA

1.35 1.35 W
88W

f = 1 MHz

and its specification is as follows.

FE1

BCD

60 to 120 100 to 200 160 to 320

2

See characteristic curves of 2SD1609, 2SD1610.

Maximum Collector Dissipation Curve

8

6

4

2

1.35W

Collector Power Dissipation Pc (W)

0

50 100 150 200

Case Temperature Tc (°C)

Ambient Temperature Ta (°C)

2SD2491, 2SD2492

Tc

Ta

3

Unit: mm

1.0

11.0 ± 0.515.6 ± 0.5

0.65

2.29 ± 0.5

8.0 ± 0.4

6.0

φ

3.1

1.9 Max 3.5

1.4

0.7

2.29 ± 0.5

+0.15
–0.1

3.2 ± 0.4

Hitachi Code
JEDEC
EIAJ
Weight

1.7

(reference value)

TO-126FM
—
—

0.87 g

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

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products.

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