Page 1
查询2SD2457供应商
Transistor
2SD2457
Silicon NPN epitaxial planer type
For low-frequency power amplification
Features
■
●
High collector to emitter voltage V
●
Large collector power dissipation PC.
●
Mini Power type package, allowing do wnsizing of the equipment
and automatic insertion through the tape packing and the magazine packing.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
*
P
C
T
j
T
stg
.
CEO
Ratings
–55 ~ +150
50
40
5
3
1.5
1
150
Unit
V
V
V
A
A
W
˚C
˚C
4.5±0.1
1.6±0.2
2.6±0.1
45°
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
321
marking
1:Base
2:Collector EIAJ:SC–62
3:Emitter Mini Power Type Package
1.5±0.1
–0.20
+0.25
0.4max.1.0
4.0
–0.2
+0.1
Marking symbol : 1Y
Unit: mm
2.5±0.1
0.4±0.04
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
*1
hFE Rank classification
Symbol
I
CBO
I
CEO
I
EBO
V
CBO
V
CEO
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
Rank Q R
h
FE
80 ~ 160 120 ~ 220
Conditions
VCB = 20V, IE = 0
VCE = 10V, IB = 0
VEB = 5V, IE = 0
IC = 1mA, IE = 0
IC = 2mA, IB = 0
*1
VCE = 5V, IC = 1A
IC = 1.5A, IB = 0.15A
IC = 2A, IB = 0.2A
*2
*2
*2
VCB = 5V, IE = –0.5A*2, f = 200MHz
VCB = 20V, IE = 0, f = 1MHz
min
50
40
80
typ
max
100
10
120
220
1.5
150
45
*2
Pulse measurement
Unit
1
µA
µA
µA
V
V
1
V
V
MHz
pF
1
Page 2
Transistor
2SD2457
PC — Ta IC — V
1.2
)
W
(
1.0
C
0.8
0.6
0.4
0.2
Collector power dissipation P
0
100
)
V
(
30
BE(sat)
10
3
1
0.3
0.1
0.03
Base to emitter saturation voltage V
0.01
0.01 0.1 1 100.03 0.3 3
Printed circut board: Copper
foil area of 1cm
the board thickness of 1.7mm
for the collector portion.
0 16040 12080 14020 10060
2
or more, and
Ambient temperature Ta (˚C
V
— I
BE(sat)
Ta=–25˚C
C
IC/IB=10
25˚C
75˚C
Collector current IC (A
)
V
CE
)
4.0
3.5
)
3.0
A
(
C
2.5
2.0
1.5
1.0
Collector current I
0.5
0
0108264
)
Collector to emitter voltage VCE (V
hFE — I
300
FE
250
200
Ta=75˚C
150
100
50
Forward current transfer ratio h
0
0.01 0.1 1 100.03 0.3 3
25˚C
–25˚C
Collector current IC (A
Ta=25˚C
IB=40mA
35mA
30mA
25mA
20mA
15mA
10mA
5mA
)
C
VCE=5V
)
10
V
(
3
CE(sat)
1
0.3
0.1
0.03
0.01
0.003
0.001
Collector to emitter saturation voltage V
0.01 0.1 1 100.03 0.3 3
Collector current IC (A
240
)
200
MHz
(
T
160
120
80
40
Transition frequency f
0
– 0.01
– 0.03
Emitter current IE (A
— I
CE(sat)
25˚C
C
IC/IB=10
Ta=75˚C
–25˚C
)
fT — I
E
VCB=5V
Ta=25˚C
– 0.1 –1 –10
– 0.3 –3
)
)
pF
(
Cob — V
120
100
ob
80
60
40
20
CB
Collector output capacitance C
0
1 3 10 30 100
Collector to base voltage VCB (V
2
IE=0
f=1MHz
Ta=25˚C
)
Page 3
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2001 MAR
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