Datasheet 2SC5508-T2, 2SC5508 Datasheet (NEC)

Page 1
PRELIMINARY DATA SHEET
NPN SILICON RF TRANSISTOR
NPN SILICON RF TRANSISTOR
FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD
FEATURES
• Ideal for low-noise, high-gain amplification applications
• NF = 1.1 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA
• Maximum available power gain: MAG = 19 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 20 mA
•fT = 25 GHz technology
• Flat-lead 4-pin thin super mini-mold (t = 0.59 mm)
ORDERING INFORMATION
Part Number Quantity Packaging Style
2SC5508
2SC5508 Loose product (50 pcs) 2SC5508-T2 Taping product (3 kpcs/reel)
Remark
To order evaluation samples, consult your NEC sales representative (available in 50-pcs units).
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Ratings Unit Collector to Base Voltage V Collector to Emitter Voltage V Emitter to Base Voltage V Collector Current I Total Power Dissipat i on Junction Temperature T Storage Temperature T
A
= +25 °C (free air)
T
Note
THERMAL RESISTANCE
Item Symbol Value Unit
• 8 mm wide emboss taping
• 1 pin (emitter), 2 pin (collector) feed hole direction
CBO
CEO
EBO
C
Note
tot
P
j
stg
15 V
3.3 V
1.5 V 35 mA
115 mW 150 °C
–65 to +150 °C
Junction to Case Resis tance R Junction to Ambient Resistance R
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
Document No. P13865EJ1V0DS00 (1st edition) Date Published March 1999 N CP(K) Printed in Japan
th j-c
th j-a
The information in this document is subject to change without notice.
150 °C/W 650 °C/W
1999©
Page 2
ELECTRICAL CHARACTERISTICS (TA = +25 °C)
Parameter Symbol Tes t Condi tions MIN. TYP. MAX. Unit
DC Characteristics
FE
h
re
C
|
S MAG MSG
P
OIP
CBO
EBO
21e
VCB = 5 V, IE = 0 200 nA VEB = 1 V, IC = 0 200 nA
Note 1
VCE = 2 V, IC = 5 mA 50 70 100
Note 2
VCB = 2 V, IE = 0, f = 1 MHz 0.18 0.24 pF
T
VCE = 3 V, IC = 30 mA, f = 2 GHz 20 25 GHz
2
|
VCE = 2 V, IC = 20 mA, f = 2 GHz 14 17 dB
Note 3
VCE = 2 V, IC = 20 mA, f = 2 GHz 19
Note 4
VCE = 2 V, IC = 20 mA, f = 2 GHz 20 dB VCE = 2 V, IC = 20 mA
-1
VCE = 2 V, IC = 20 mA
3
Note 5
, f = 2 GHz
Note 5
, f = 2 GHz
Collector Cut-off Current I Emitter Cut-off Current I DC Current Gain RF Characteristics Reverse Transfer Capacitance Gain Bandwidth Product f Noise Figure NF VCE = 2 V, IC = 5 mA, f = 2 GHz, ZS = Z Insertion Power Gain Maximum Available Power Gain Maximum Stable Power Gain Output Power at 1 dB
Compression Point Output Power at Third Order
Intercept Point
2SC5508
opt
–1.11.5dB
–11–dBm
–22– –
Notes 1.
Pulse measurement PW ≤ 350 Emitter to base capacitance measured using capacitance meter (self-balancing bridge method) when
2.
the emitter is connected to the guard pin
S21 MAG =
3.
S
S MSG =
4.
S
Collector current when P
5.
hFE CLASSIFICATION
Rank FB
Marking T79
FE
h
12
21 12
k – k2 – 1
50 to 100
-1
is output
s, Duty cycle ≤ 2 %
µ
2
Preliminary Data Sheet P13865EJ1V0DS00
Page 3
TYPICAL CHARACTERISTICS (TA = +25 °C)
Thermal/DC Characteristics
2SC5508
Total Power Dissipation vs. Ambient Temperature, Case Temperature
250
PT-TA: Free air P
T-TA
:
200
(mW)
T
Mounted on ceramic board
(15 mm × 15 mm, t = 0.6 mm)
T-TC
: When case temperature
P
is specified
150
100
50
(mA)
C
Collector Current I
Collector Current vs. DC Base Voltage
50
VCE = 2 V
40
30
20
10
Total Power Dissipation P
0
0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0 1.2
Ambient Temperature TA (°C), Case Temperature TC (°C)
Collector Current vs. Collector to Emitter Voltage
µµ
50
750 A
40
(mA)
C
30
20
700 A
650 A
µ
600 A
µ
550 A
µ
500 A
µ
450 A
µ
400 A
µ
350 A
µ
300 A
µ
250 A
µ
200 A
µ
150 A
µ
100 A
µ
IB = 50 A
200 100
FE
µ
10
DC Base Voltage VBE (V)
DC Current Gain vs. Collector Current
VCE = 2 V
Collector Current I
10
0
012345
Collector to Emitter Voltage V
Capacitance/fT Characteristics
Reverse Transfer Capacitance vs. Collector to Base Voltage
0.50
(pF)
re
0.40
0.30
0.20
0.10
Reverse Transfer Capacitance C
0
0 1.0 2.0 3.0 4.0 5.0
Collector to Base Voltage V
CE
(V)
f = 1 MHz
CB
(V)
DC Current Gain h
1
0.001
0.01 0.1 1 10 100 Collector Current I
C
(mA)
Gain Bandwidth Product vs. Collector Current
30
VCE = 3 V f = 2 GHz
25
(GHz)
T
20
15
10
5
Gain Bandwidth Product f
0
1
10 100
Collector Current IC (mA)
Preliminary Data Sheet P13865EJ1V0DS00
3
Page 4
Gain Characteristics
Insertion Power Gain, Maximum Available Power Gain, Maximum Stable Power Gain vs. Frequency
40 35 30
(dB)
2
|
25
21e
20 15 10
5
Insertion Power Gain |S
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
0
0.1 1.0 10.0
MSG
2
|S
21e
|
Frequency f (GHz)
MAG
VCE = 2 V
C
= 20 mA
I
2SC5508
Insertion Power Gain, Maximum Available Power Gain, Maximum Stable Power Gain vs. Collector Current
30
f = 1 GHz
CE
= 2 V
V
25
MSG
20
(dB)
2
|
21e
15
10
5
Insertion Power Gain |S
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
0
1 10 100 1 10 100
Collector Current IC (mA)
Output Characteristics
Output Power, Collector Current vs. Input Power
20
f = 1 GHz VCE = 2 V
15
(dBm)
out
10
Insertion Power Gain, Maximum Available Power Gain, Maximum Stable Power Gain vs. Collector Current
30
25
f = 2 GHz
CE
= 2 V
V
MAG
MAG
20
(dB)
2
|S
21e
|
2
|
21e
15
MSG
2
|S
21e
|
10
5
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S
0
C
Collector Current I
(mA)
Output Power, Collector Current vs. Input Power
125
20
125
f = 2 GHz
P
out
100
(mA)
C
(dBm)
75
out
15
10
VCE = 2 V
P
out
100
(mA)
C
75
5
Output Power P
0
–5
–20 –15 –10 –5 0 5
Input Power Pin (dBm)
4
50
I
C
Collector Current I
25
0
Preliminary Data Sheet P13865EJ1V0DS00
5
Output Power P
0
–5
–20 –15 –10 –5 0 5
Input Power P
in
(dBm)
50
I
C
Collector Current I
25
0
Page 5
Noise Characteristics
Noise Figure, Associated Gain vs. Collector Current Noise Figure, Associated Gain vs. Collector Current
6
5
4
2SC5508
f = 1.0 GHz V
CE
= 2 V
G
a
30
25
20
(dB)
a
6
5
4
G
a
f = 1.5 GHz V
CE
= 2 V
30
25
20
(dB)
a
3
2
Noise Figure NF (dB)
NF
1
0
1 10 100
Collector Current I
C
(mA)
15
10
Associated Gain G
5
0
3
2
NF
Noise Figure NF (dB)
1
0
1 10 100
C
Collector Current I
(mA)
Noise Figure, Associated Gain vs. Collector Current Noise Figure, Associated Gain vs. Collector Current
6
5
4
Ga
f = 2.0 GHz V
CE
= 2 V
3
2
Noise Figure NF (dB)
NF
1
0
1 10 100 1 10 100
Collector Current IC (mA)
30
25
(dB)
a
20
15
10
Associated Gain G
5
0
6
5
4
3
2
Noise Figure NF (dB)
1
0
Collector Current I
Ga
NF
f = 2.5 GHz V
CE
= 2 V
C
(mA)
15
10
Associated Gain G
5
0
30
25
(dB)
a
20
15
10
Associated Gain G
5
0
Preliminary Data Sheet P13865EJ1V0DS00
5
Page 6
S PARAMETER
VCE = 2 V, IC = 3 mA
2SC5508
Frequency S
11
21
S
12
S
22
S
GHz MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG.
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
0.82
0.81
0.80
0.78
0.76
0.74
0.72
0.70
0.68
0.66
0.64
0.63
0.61
0.60
0.58
0.57
0.56
0.55
0.55
–9.0 –17.5 –25.8 –33.6 –41.4 –49.0 –56.8 –64.1 –71.4
–78.6 –86.1 –93.2
–100.5 –107.4 –114.6 –121.5 –128.1 –134.4 –141.0
10.69
10.04
9.59
9.10
8.74
8.34
8.03
7.69
7.41
7.09
6.85
6.58
6.33
6.07
5.85
5.63
5.43
5.20
5.02
170.8
163.4
156.9
150.9
145.4
140.3
135.3
130.8
126.0
121.6
117.2
113.1
108.8
105.1
101.1
97.3
93.6
90.1
86.6
0.01
0.02
0.03
0.04
0.04
0.05
0.05
0.06
0.07
0.07
0.07
0.08
0.08
0.08
0.08
0.09
0.09
0.09
0.09
82.1
76.0
71.8
67.5
63.8
60.1
56.5
53.7
50.3
47.1
44.7
42.2
39.4
37.3
35.3
33.3
31.4
29.7
28.6
0.98
0.95
0.91
0.88
0.85
0.81
0.78
0.75
0.72
0.69
0.66
0.63
0.60
0.58
0.55
0.53
0.50
0.48
0.46
–6.1 –11.6 –16.1 –20.2 –23.8 –27.2 –30.5 –33.5 –36.5
–39.3 –41.9 –44.4 –46.8 –49.0 –51.1 –53.3 –55.3 –57.1 –59.0
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
4.0
5.0
6.0
7.0
8.0
0.54
0.54
0.54
0.54
0.54
0.54
0.55
0.55
0.55
0.56
0.57
0.66
0.72
0.77
0.80
0.84
–147.2 –153.0 –158.7 –164.3 –169.3 –174.3 –179.2
176.3
171.9
167.9
164.1
142.0
124.8
112.4
101.6
93.5
4.84
4.64
4.48
4.32
4.16
4.01
3.87
3.74
3.61
3.48
3.38
2.45
1.90
1.53
1.26
1.04
83.4
80.1
76.9
73.8
70.9
68.1
65.1
62.3
59.5
57.0
54.5
38.2
20.7
5.3
–9.4
–22.2
0.09
0.09
0.09
0.09
0.09
0.10
0.09
0.09
0.10
0.10
0.10
0.10
0.10
0.10
0.11
0.12
27.0
25.5
24.1
23.1
21.9
21.2
20.6
19.6
19.2
18.6
17.9
12.8
13.4
13.2
11.8
9.7
0.44
0.42
0.40
0.39
0.37
0.35
0.34
0.33
0.31
0.30
0.29
0.20
0.19
0.22
0.29
0.37
–60.9 –62.8 –64.3 –66.3 –68.1 –70.0 –71.9 –73.8 –75.7 –77.8
–80.1
–106.9 –140.5 –171.1
167.7
152.4
6
Preliminary Data Sheet P13865EJ1V0DS00
Page 7
VCE = 2 V, IC = 5 mA
2SC5508
Frequency S
11
21
S
12
S
22
S
GHz MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG.
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
0.75
0.74
0.72
0.69
0.67
0.64
0.62
0.60
0.58
0.56
0.54
0.53
0.51
0.50
0.49
0.48
0.48
0.48
0.47
–11.1 –21.5 –31.7 –41.3 –50.6 –59.6 –68.5 –77.1 –85.4
–93.6 –101.6 –109.2 –116.7 –124.2 –131.5 –138.3 –144.8 –151.1 –157.2
14.43
13.69
12.98
12.27
11.67
11.06
10.51
9.98
9.49
9.00
8.58
8.17
7.77
7.40
7.07
6.74
6.45
6.16
5.90
169.5
160.9
153.5
146.7
140.5
134.8
129.5
124.5
119.5
114.9
110.4
106.2
102.1
98.3
94.5
91.0
87.7
84.2
81.1
0.01
0.02
0.03
0.03
0.04
0.04
0.05
0.05
0.06
0.06
0.06
0.07
0.07
0.07
0.07
0.07
0.08
0.08
0.08
82.3
75.0
69.7
64.7
61.2
57.2
53.9
51.7
48.6
45.8
43.9
42.3
40.2
38.6
37.2
36.1
35.3
33.8
33.1
0.97
0.93
0.89
0.84
0.80
0.76
0.72
0.68
0.64
0.61
0.57
0.54
0.51
0.48
0.46
0.43
0.41
0.39
0.37
–7.6 –14.2 –19.8 –24.6 –28.9 –32.9 –36.4 –39.5 –42.7
–45.5 –48.0 –50.3 –52.6 –54.9 –56.8 –58.8 –60.8 –62.4 –64.4
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
4.0
5.0
6.0
7.0
8.0
0.48
0.48
0.48
0.48
0.49
0.50
0.50
0.51
0.52
0.53
0.54
0.64
0.70
0.75
0.79
0.82
–163.1 –168.7 –174.0 –179.0
176.2
171.9
167.6
163.8
159.9
156.5
153.2
136.4
121.3
110.6
99.7
92.7
5.65
5.41
5.20
4.99
4.78
4.60
4.42
4.27
4.11
3.97
3.85
2.74
2.13
1.72
1.42
1.19
78.1
75.0
72.2
69.4
66.7
64.2
61.5
59.0
56.5
54.1
51.8
37.4
21.1
6.5
–7.7
–19.8
0.08
0.08
0.08
0.08
0.08
0.08
0.09
0.09
0.09
0.09
0.09
0.09
0.10
0.11
0.12
0.13
32.5
31.3
30.6
29.6
29.8
28.6
28.3
27.9
27.3
27.4
26.7
22.6
21.2
18.9
15.1
11.4
0.35
0.34
0.32
0.30
0.29
0.27
0.26
0.25
0.24
0.22
0.21
0.14
0.16
0.21
0.28
0.36
–66.2 –68.0 –69.7 –71.6 –73.8 –75.9 –77.6 –80.3 –82.9 –85.1
–87.8
–127.0 –164.7
168.2
152.1
140.0
Preliminary Data Sheet P13865EJ1V0DS00
7
Page 8
VCE = 2 V, IC = 10 mA
2SC5508
Frequency S
11
21
S
12
S
22
S
GHz MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG.
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
0.63
0.61
0.58
0.55
0.52
0.50
0.48
0.46
0.44
0.43
0.42
0.41
0.41
0.41
0.41
0.41
0.41
0.42
0.42
–15.1 –29.6 –43.0 –55.6 –67.5 –78.7 –89.4 –99.6
–108.8
–118.0 –126.5 –134.4 –142.0 –149.1 –155.7 –161.9 –167.7 –173.1 –178.0
20.76
19.66
18.37
17.15
15.96
14.82
13.79
12.85
11.98
11.20
10.49
9.84
9.24
8.70
8.23
7.80
7.40
7.03
6.69
167.3
156.9
148.0
140.0
132.9
126.5
120.7
115.4
110.5
105.9
101.6
97.8
94.1
90.6
87.3
84.1
81.1
78.1
75.5
0.01
0.02
0.02
0.03
0.03
0.04
0.04
0.04
0.05
0.05
0.05
0.05
0.06
0.06
0.06
0.06
0.06
0.07
0.07
80.6
72.0
66.8
62.9
58.7
56.0
53.3
51.8
49.6
48.0
47.4
46.7
45.4
45.0
44.9
43.8
43.4
42.8
42.5
0.95
0.90
0.83
0.77
0.71
0.66
0.61
0.56
0.52
0.48
0.45
0.42
0.39
0.37
0.35
0.33
0.31
0.29
0.27
–10.0 –18.5 –25.6 –31.5 –36.1 –40.5 –44.1 –47.1 –49.9
–52.3 –54.5 –56.5 –58.4 –60.2 –62.0 –63.8 –65.7 –67.2 –69.3
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
4.0
5.0
6.0
7.0
8.0
0.43
0.44
0.44
0.45
0.46
0.47
0.48
0.48
0.49
0.50
0.51
0.63
0.69
0.75
0.78
0.82
177.2
172.7
168.6
164.7
161.1
157.8
154.3
151.3
148.2
145.5
143.0
130.0
117.3
107.8
97.5
91.1
6.38
6.09
5.82
5.59
5.34
5.12
4.93
4.75
4.56
4.40
4.28
3.01
2.34
1.90
1.57
1.32
72.8
70.2
67.6
65.2
62.8
60.5
58.2
55.9
53.8
51.6
49.6
36.5
21.3
7.9
–5.5
–17.0
0.07
0.07
0.07
0.08
0.08
0.08
0.08
0.08
0.09
0.09
0.09
0.10
0.11
0.12
0.13
0.14
42.3
41.1
41.0
40.3
40.2
38.9
38.9
39.1
37.4
37.4
36.4
31.7
28.0
23.2
17.2
12.4
0.26
0.24
0.23
0.21
0.20
0.19
0.18
0.17
0.16
0.15
0.14
0.12
0.17
0.23
0.30
0.36
–71.0 –73.1 –75.0 –77.7 –79.8 –82.6 –85.3 –88.5 –92.0 –95.6
–99.6
–162.6
165.5
146.7
135.7
127.0
8
Preliminary Data Sheet P13865EJ1V0DS00
Page 9
VCE = 2 V, IC = 20 mA
2SC5508
Frequency S
11
21
S
12
S
22
S
GHz MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG.
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
0.48
0.46
0.43
0.41
0.39
0.38
0.37
0.36
0.36
0.36
0.36
0.36
0.37
0.37
0.38
0.39
0.40
0.40
0.41
–21.4 –41.3 –59.2 –75.4
–89.9 –102.6 –114.2 –124.7 –134.1
–142.6 –150.5 –157.4 –163.8 –169.6 –175.2
179.9
175.3
171.1
167.1
27.42
25.60
23.38
21.22
19.27
17.45
15.92
14.56
13.39
12.35
11.45
10.65
9.94
9.30
8.76
8.26
7.81
7.39
7.02
164.9
152.5
142.0
133.1
125.5
118.9
113.2
108.1
103.6
99.3
95.4
91.9
88.5
85.5
82.4
79.5
77.0
74.3
71.8
0.01
0.02
0.02
0.02
0.03
0.03
0.04
0.04
0.04
0.04
0.05
0.05
0.05
0.05
0.05
0.06
0.06
0.06
0.06
78.5
70.7
65.2
61.7
58.8
56.6
55.4
54.7
53.5
53.3
52.9
52.5
51.5
51.4
51.0
50.8
50.2
49.8
49.7
0.93
0.85
0.77
0.69
0.62
0.56
0.51
0.46
0.43
0.39
0.36
0.34
0.31
0.29
0.27
0.25
0.24
0.22
0.21
–12.3 –22.8 –31.0 –37.2 –42.0 –46.2 –49.5 –52.0 –54.3
–56.4 –58.1 –60.0 –61.6 –63.3 –64.8 –66.6 –68.4 –70.3 –72.4
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0.42
0.43
0.44
0.45
0.46
0.47
0.47
0.48
0.49
0.50
0.51
0.64
0.70
0.75
0.78
0.82
0.83
0.86
163.4
159.9
156.6
153.4
150.6
147.9
145.2
142.8
140.2
138.0
136.0
125.8
114.7
105.8
96.0
89.8
83.4
78.9
6.68
6.35
6.08
5.81
5.56
5.35
5.12
4.93
4.72
4.58
4.43
3.08
2.39
1.94
1.60
1.36
1.17
1.00
69.2
67.0
64.7
62.4
60.2
58.0
56.0
53.8
51.7
49.9
47.8
35.5
21.1
8.2
–4.5 –15.6 –26.8 –35.9
0.07
0.07
0.07
0.07
0.08
0.08
0.08
0.08
0.09
0.09
0.09
0.10
0.12
0.13
0.14
0.14
0.15
0.15
49.4
48.5
48.1
46.5
46.2
45.3
45.4
44.7
43.5
43.4
42.2
36.2
30.9
24.6
18.4
13.0
6.5
1.6
0.19
0.18
0.17
0.16
0.15
0.14
0.13
0.12
0.11
0.11
0.10
0.13
0.19
0.26
0.32
0.38
0.43
0.48
–74.6 –77.1 –79.3 –82.6 –85.9 –89.5 –93.5
–97.7 –103.0 –108.0
–113.9
172.2
149.5
135.5
126.7
119.4
114.0
109.5
Preliminary Data Sheet P13865EJ1V0DS00
9
Page 10
NOISE PARAMETER
<Equal NF circle>
CE
= 2 V
V
C
= 5 mA
I f = 1 GHz
CE
= 2 V
V
C
= 5 mA
I f = 2 GHz
Unstable area
2SC5508
Unstable area
VCE = 2 V, IC = 3 mA
f
(GHz)
0.8
0.9
1.0
1.5
1.8
1.9
2.0
2.5
NF
(dB)
0.78
0.80
0.82
0.93
1.00
1.02
1.04
1.15
min
NF
3.0 dB
4.0 dB
min
= 1.0 dB
1.5 dB
2.0 dB
2.5 dB
3.5 dB
G
(dB)
21.4
20.7
20.0
17.0
15.6
15.2
14.8
13.5
min
= 1.1 dB
Γ
opt
a
Γ
opt
NF
3.0 dB
2.0 dB
2.5 dB
3.5 dB
4.0 dB
Γ
1.5 dB
opt
Rn/50
MAG. ANG.
0.26
0.26
0.26
0.23
0.20
0.19
0.19
0.20
31.7
32.7
34.7
57.0
78.0
86.0
94.2
138.3
0.17
0.17
0.17
0.16
0.14
0.14
0.13
0.10
VCE = 2 V, IC = 5 mA
f
(GHz)
0.8
0.9
1.0
1.5
1.8
1.9
2.0
2.5
10
NF
(dB)
0.93
0.94
0.96
1.03
1.07
1.09
1.10
1.17
min
0.12
0.12
0.12
0.09
0.08
0.08
0.08
0.14
Γ
opt
a
G
(dB)
MAG. ANG.
22.5
21.8
21.1
18.1
16.7
16.3
15.9
14.3
Preliminary Data Sheet P13865EJ1V0DS00
28.1
28.8
31.7
71.1
106.2
118.5
130.5
–179.7
Rn/50
0.15
0.15
0.15
0.14
0.13
0.13
0.12
0.11
Page 11
VCE = 2 V, IC = 10 mA
2SC5508
f
(GHz)
0.8
0.9
1.0
1.5
1.8
1.9
2.0
2.5
VCE = 2 V, IC = 20 mA
f
(GHz)
0.8
0.9
1.0
1.5
1.8
1.9
2.0
2.5
NF
(dB)
1.28
1.29
1.30
1.37
1.41
1.43
1.44
1.51
NF
(dB)
1.59
1.61
1.63
1.72
1.78
1.79
1.81
1.90
min
min
G
(dB)
23.7
23.0
22.3
19.3
17.8
17.3
16.9
15.3
G
(dB)
24.5
23.7
23.0
19.9
18.3
17.9
17.5
15.8
a
Γ
opt
Rn/50
MAG. ANG.
0.07
0.07
0.08
0.13
0.16
0.17
0.19
0.25
a
–159.4 –157.5 –155.7 –149.2 –146.1 –145.0 –143.9 –136.7
Γ
opt
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
Rn/50
MAG. ANG.
0.26
0.26
0.27
0.30
0.33
0.34
0.35
0.40
–158.1 –155.5 –153.1 –142.6 –137.3 –135.7 –134.1 –126.5
0.12
0.13
0.13
0.14
0.15
0.06
0.16
0.18
Preliminary Data Sheet P13865EJ1V0DS00
11
Page 12
PACKAGE DRAWINGS
Flat-lead 4-pin thin super mini-mold (unit: mm)
2SC5508
0.1 ±
2.0
1.25
0.600.65
+0.1
–0.05
0.40
+0.1
–0.05
0.30 (LEADS1,3,4)
0.59 ± 0.05
Pin connections
1. Emitter
2. Collector
3. Emitter
4. Base
2.05 ± 0.1
1.25 ± 0.1
T79
0.650.65
1.30
12
43
+0.1
–0.05
0.11
12
Preliminary Data Sheet P13865EJ1V0DS00
Page 13
2SC5508
SOLDERING CONDITIONS
Solder this product under the following recommended conditions. For soldering methods and conditions other than those recommended, consult NEC.
Soldering Method(s) Soldering Conditions Recommended Conditions Sym bol
Infrared reflow Package peak temperature: 235 °C, Time: 30 sec max. (210 °C min.),
Number of times: twice max., Maximum number of days: None
VPS Package peak temperature: 215 °C, Time: 40 sec max. (200 °C min.),
Number of times: twice max., Maximum number of days: None
Wave soldering Solder bat h temperature: 260 °C, Time: 10 sec max., Number of
times: once, Max i m um num ber of days: None
Number of days in storage after the dry pack has been opened. The storage conditions are at 25 °C,
Note
Note
Note
Note
65% RH MAX.
Caution Do not use two or more soldering methods in combination.
For details of the recommended soldering conditions, refer to information document
Mounting Technology Manual (C10535E)
.
IR35-00-2
VP15-00-2
WS60-00-1
Semiconductor Device
Preliminary Data Sheet P13865EJ1V0DS00
13
Page 14
[MEMO]
2SC5508
14
Preliminary Data Sheet P13865EJ1V0DS00
Page 15
[MEMO]
2SC5508
Preliminary Data Sheet P13865EJ1V0DS00
15
Page 16
2SC5508
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product.
M4 96. 5
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