To order evaluation samples, consult your NEC sales representative (available in 50-pcs units).
ABSOLUTE MAXIMUM RATINGS
ParameterSymbolRatingsUnit
Collector to Base VoltageV
Collector to Emitter VoltageV
Emitter to Base VoltageV
Collector CurrentI
Total Power Dissipat i on
Junction TemperatureT
Storage TemperatureT
A
= +25 °C (free air)
T
Note
THERMAL RESISTANCE
ItemSymbolValueUnit
• 8 mm wide emboss taping
• 1 pin (emitter), 2 pin (collector) feed hole direction
CBO
CEO
EBO
C
Note
tot
P
j
stg
15V
3.3V
1.5V
35mA
115mW
150°C
–65 to +150°C
Junction to Case Resis tanceR
Junction to Ambient ResistanceR
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
Document No. P13865EJ1V0DS00 (1st edition)
Date Published March 1999 N CP(K)
Printed in Japan
th j-c
th j-a
The information in this document is subject to change without notice.
VCE = 2 V, IC = 20 mA, f = 2 GHz–20–dB
VCE = 2 V, IC = 20 mA
-1
VCE = 2 V, IC = 20 mA
3
Note 5
, f = 2 GHz
Note 5
, f = 2 GHz
Collector Cut-off CurrentI
Emitter Cut-off CurrentI
DC Current Gain
RF Characteristics
Reverse Transfer Capacitance
Gain Bandwidth Productf
Noise FigureNFVCE = 2 V, IC = 5 mA, f = 2 GHz, ZS = Z
Insertion Power Gain
Maximum Available Power Gain
Maximum Stable Power Gain
Output Power at 1 dB
Compression Point
Output Power at Third Order
Intercept Point
2SC5508
opt
–1.11.5dB
–11–dBm
–22– –
Notes 1.
Pulse measurement PW ≤ 350
Emitter to base capacitance measured using capacitance meter (self-balancing bridge method) when
2.
the emitter is connected to the guard pin
S21
MAG =
3.
S
S
MSG =
4.
S
Collector current when P
5.
hFE CLASSIFICATION
RankFB
MarkingT79
FE
h
12
21
12
k – k2 – 1
50 to 100
-1
is output
s, Duty cycle ≤ 2 %
µ
2
Preliminary Data Sheet P13865EJ1V0DS00
Page 3
TYPICAL CHARACTERISTICS (TA = +25 °C)
Thermal/DC Characteristics
2SC5508
Total Power Dissipation vs.
Ambient Temperature, Case Temperature
250
PT-TA: Free air
P
T-TA
:
200
(mW)
T
Mounted on ceramic board
(15 mm × 15 mm, t = 0.6 mm)
T-TC
: When case temperature
P
is specified
150
100
50
(mA)
C
Collector Current I
Collector Current vs. DC Base Voltage
50
VCE = 2 V
40
30
20
10
Total Power Dissipation P
0
025507510012515000.20.40.60.81.01.2
Ambient Temperature TA (°C), Case Temperature TC (°C)
Collector Current vs. Collector to Emitter Voltage
µµ
50
750 A
40
(mA)
C
30
20
700 A
650 A
µ
600 A
µ
550 A
µ
500 A
µ
450 A
µ
400 A
µ
350 A
µ
300 A
µ
250 A
µ
200 A
µ
150 A
µ
100 A
µ
IB = 50 A
200
100
FE
µ
10
DC Base Voltage VBE (V)
DC Current Gain vs. Collector Current
VCE = 2 V
Collector Current I
10
0
012345
Collector to Emitter Voltage V
Capacitance/fT Characteristics
Reverse Transfer Capacitance vs. Collector to Base Voltage
0.50
(pF)
re
0.40
0.30
0.20
0.10
Reverse Transfer Capacitance C
0
01.02.03.04.05.0
Collector to Base Voltage V
CE
(V)
f = 1 MHz
CB
(V)
DC Current Gain h
1
0.001
0.010.1110100
Collector Current I
C
(mA)
Gain Bandwidth Product vs. Collector Current
30
VCE = 3 V
f = 2 GHz
25
(GHz)
T
20
15
10
5
Gain Bandwidth Product f
0
1
10100
Collector Current IC (mA)
Preliminary Data Sheet P13865EJ1V0DS00
3
Page 4
Gain Characteristics
Insertion Power Gain, Maximum Available Power Gain,
Maximum Stable Power Gain vs. Frequency
40
35
30
(dB)
2
|
25
21e
20
15
10
5
Insertion Power Gain |S
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
0
0.11.010.0
MSG
2
|S
21e
|
Frequency f (GHz)
MAG
VCE = 2 V
C
= 20 mA
I
2SC5508
Insertion Power Gain, Maximum Available Power Gain,
Maximum Stable Power Gain vs. Collector Current
30
f = 1 GHz
CE
= 2 V
V
25
MSG
20
(dB)
2
|
21e
15
10
5
Insertion Power Gain |S
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
0
110100110100
Collector Current IC (mA)
Output Characteristics
Output Power, Collector Current vs. Input Power
20
f = 1 GHz
VCE = 2 V
15
(dBm)
out
10
Insertion Power Gain, Maximum Available Power Gain,
Maximum Stable Power Gain vs. Collector Current
30
25
f = 2 GHz
CE
= 2 V
V
MAG
MAG
20
(dB)
2
|S
21e
|
2
|
21e
15
MSG
2
|S
21e
|
10
5
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S
0
C
Collector Current I
(mA)
Output Power, Collector Current vs. Input Power
125
20
125
f = 2 GHz
P
out
100
(mA)
C
(dBm)
75
out
15
10
VCE = 2 V
P
out
100
(mA)
C
75
5
Output Power P
0
–5
–20–15–10–505
Input Power Pin (dBm)
4
50
I
C
Collector Current I
25
0
Preliminary Data Sheet P13865EJ1V0DS00
5
Output Power P
0
–5
–20–15–10–505
Input Power P
in
(dBm)
50
I
C
Collector Current I
25
0
Page 5
Noise Characteristics
Noise Figure, Associated Gain vs. Collector CurrentNoise Figure, Associated Gain vs. Collector Current
6
5
4
2SC5508
f = 1.0 GHz
V
CE
= 2 V
G
a
30
25
20
(dB)
a
6
5
4
G
a
f = 1.5 GHz
V
CE
= 2 V
30
25
20
(dB)
a
3
2
Noise Figure NF (dB)
NF
1
0
110100
Collector Current I
C
(mA)
15
10
Associated Gain G
5
0
3
2
NF
Noise Figure NF (dB)
1
0
110100
C
Collector Current I
(mA)
Noise Figure, Associated Gain vs. Collector CurrentNoise Figure, Associated Gain vs. Collector Current
Solder this product under the following recommended conditions.
For soldering methods and conditions other than those recommended, consult NEC.
Soldering Method(s)Soldering ConditionsRecommended Conditions Sym bol
Infrared reflowPackage peak temperature: 235 °C, Time: 30 sec max. (210 °C min.),
Number of times: twice max., Maximum number of days: None
VPSPackage peak temperature: 215 °C, Time: 40 sec max. (200 °C min.),
Number of times: twice max., Maximum number of days: None
Wave solderingSolder bat h temperature: 260 °C, Time: 10 sec max., Number of
times: once, Max i m um num ber of days: None
Number of days in storage after the dry pack has been opened. The storage conditions are at 25 °C,
Note
Note
Note
Note
65% RH MAX.
Caution Do not use two or more soldering methods in combination.
For details of the recommended soldering conditions, refer to information document
Mounting Technology Manual (C10535E)
.
IR35-00-2
VP15-00-2
WS60-00-1
Semiconductor Device
Preliminary Data Sheet P13865EJ1V0DS00
13
Page 14
[MEMO]
2SC5508
14
Preliminary Data Sheet P13865EJ1V0DS00
Page 15
[MEMO]
2SC5508
Preliminary Data Sheet P13865EJ1V0DS00
15
Page 16
2SC5508
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96. 5
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