Page 1
2SC5585 / 2SC5663
Transistors
Low frequency transistor (12V, 0.5A)
2SC5585 / 2SC5663
The transistor of 500mA class which w ent only into 2125 size conventionally was att ained in 1608 sizes or 1208 sizes.
zApplica tions
For switching
For muting
zFeatures
1) High current.
2) Low V
CE(sat).
V
CE(sat) ≤ 250mV at IC = 200mA / IB = 10mA
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collectot-base voltage
Collector-emitter voltage
Emitter-base voltage V
Collector current
Collector power dissipation
Junction temperature
Storage temperature
∗ Single pulse Pw = 1ms
Symbol Limits Unit
V
V
Tstg
CBO
CEO
EBO
I
C
I
CP
P
C
Tj
15 V
12
500
150
150
−55 to +150
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collectoe-emitter brakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current I
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
CBO
BV
BV
CEO
BV
EBO
I
CBO
EBO
V
CE
(sat)
h
FE
f
T
Cob
Min.
15
12
6
−
−−100 VCB = 6VnA
−
270
− 320 − VCE = 2V, IE = −10mA, f = 100MHzMHz
−
V
V6
mA
A1
∗
mW
°C
°C
Typ. Max. Unit Conditions
−
−
−
−
−
−
−
100
90
250
−
680
7.5
−
zExternal dimensions (Unit : mm)
2SC5585
0.3
0.15
0.1Min.
Abbreviated symbol : BX
1.2
Abbreviated symbol : BXROHM : VMT3
C
VI
C
V
I
E
I
V
V
nA
mV
C
I
V
−
V
pF
ROHM : EMT3
EIAJ : SC-75A
JEDEC : SOT-416
2SC5663
= 10µA
= 1mA
= 10µA
CB
= 15V
= 200mA, IB = 10mA
CE
= 2V, IC = 10mA
CB
= 10V, IE = 0A, f = 1MHz
0.32
0.5
(3)
0.13
(3)
1.2
0.80.2
0~0.1
0.8
1.6
0~0.1
(1)
(2)
0.2
(2)
(1)
0.22
0.15Max.
0.2
1.6
1.0
0.50.5
0.2
0.7
0.55
(1) Emitter
(2) Base
(3) Collector
0.8
0.40.4
(1) Base
(2) Emitter
(3) Collector
Rev.B 1/2
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2SC5585 / 2SC5663
Transistors
zPackaging specifications
Type
2SC5585
2SC5663
zElectrical characteristic curves
1000
500
(mA)
C
200
100
50
20
10
5
COLLECTOR CURRENT : I
2
1
0
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
1000
(mV)
500
CE(sat)
200
100
50
IC/
20
10
5
2
1
1 2 5 10 20 50 100 200 500 1000
COLLECTOR SATURATION VOLTAGE : V
Fig.4 Collector-emitter saturation voltage
1000
500
200
100
50
20
10
5
2
1
0.1
EMITTER INPUT CAPACITANCE : Cib (pF)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
Fig.7 Collector output capacitance
vs collector-base voltage
Rev.B 2/2
Package
Code
Basic ordering
h
FE
unit (pieces)
VCE = 2V
C
°
C
°
C
°
25
25
1
-40
Ta =
0.5 1.0
characteristics
Ta = 25°C
IB = 50
20
10
COLLECTOR CURRENT : IC (mA)
vs. collector current ( ΙΙ )
I
E
=
0A
f
=
1MHz
Ta = 25°C
Cib
Cob
1
0.2
0.5
EMITTER TO BASE VOLTAGE : VEB (V)
Emitter input capacitance
vs emitter-base voltage
10 20
5
2
Taping
TL
3000
T2L
8000
−
−
1000
500
FE
200
100
DC CURRENT GAIN : h
1.5
50
20
10
5
2
1
1 2 5 10 20 50 100 200 500
COLLECTOR CURRENT : IC (mA)
Fig.2 DC current gain vs.
collector current
10000
(mV)
5000
BE(sat)
2000
1000
500
200
100
50
20
10
1 2 5 10 20 50 100 200 500 1000
COLLECTOR SATURATION VOLTAGE : V
Ta =
COLLECTOR CURRENT : IC (mA)
Fig.5 Base-emitter saturation voltage
vs. collector current
50 100
Ta = 125°C
25°C
-40°C
-40°C
25°C
125°C
IC/
VCE =
IB =
2V
1000
(mV)
500
CE(sat)
200
100
50
Ta = 125°C
20
10
5
2
1000
1
1 2 5 10 20 50 100 200 500 1000
COLLECTOR SATURATION VOLTAGE : V
25°C
-40°C
COLLECTOR CURRENT : IC (mA)
IC/
IB =
20
Fig.3 Collector-emitter saturation voltage
vs. collector current ( Ι )
20
1000
500
V
CE
=
2V
Ta = 25°C
Pulsed
200
100
)
Z
50
MH
(
T
f
20
10
5
2
1
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.6 Collector output capacitance
102050
215
Emitter input capacitance
100 200
500 1000
vs. base voltage
Page 3
Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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