Datasheet 2SC5507-T2, 2SC5507 Datasheet (NEC)

PRELIMINARY DATA SHEET

NPN SILICON RF TRANSISTOR

NPN SILICON RF TRANSISTOR FOR LOW CURRENT,

LOW NOISE, HIGH-GAIN AMPLIFICATION

FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD

FEATURES

• Low noise and high gain with low collector current

• NF = 1.2 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 2 mA

• Maximum stable power gain: MSG = 22 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA

•fT = 25 GHz technology

• Flat-lead 4-pin thin super mini-mold (t = 0.59 mm)

ORDERING INFORMATION

Part Number Quantity Packaging Style

2SC5507

2SC5507 Loose product (50 pcs) 2SC5507-T2 Taping product (3 kpcs/reel)

Remark

To order evaluation samples, consult your NEC sales representative (available in 50-pcs units).

ABSOLUTE MAXIMUM RATINGS

Parameter Symbol Ratings Unit Collector to Base Voltage V Collector to Emitter Voltage V Emitter to Base Voltage V Collector Current I Total Power Dissipat i on Junction Temperature T Storage Temperature T

A

= +25 °C (free air)

T

Note

THERMAL RESISTANCE

Item Symbol Value Unit

• 8 mm wide emboss taping

• 1 pin (emitter), 2 pin (collector) feed hole direction

CBO

CEO

EBO

C

Note

tot

P

j

stg

15 V

3.3 V

1.5 V 12 mA 39 mW

150 °C

–65 to +150 °C

Junction to Case Resis tance R Junction to Ambient Resistance R

Because this product uses high-frequency technology, avoid excessive static electricity, etc.

Document No. P13864EJ1V0DS00 (1st edition) Date Published March 1999 N CP(K) Printed in Japan

th j-c

th j-a

The information in this document is subject to change without notice.

240 °C/W 650 °C/W

1999©

ELECTRICAL CHARACTERISTICS (TA = +25 °C)

Parameter Symbol Tes t Condi tions MIN. TYP. MAX. Unit

DC characteristic s

FE

h

re

C

|

S

MSG

P

OIP

CBO

EBO

21e

VCB = 5 V, IE = 0 – – 100 nA VEB = 1 V, IC = 0 – – 100 nA

Note 1

VCE = 2 V, IC = 5 mA 50 70 100 –

Note 2

VCB = 2 V, IE = 0, f = 1 MHz – 0.08 0.12 pF

T

VCE = 3 V, IC = 10 mA, f = 2 GHz 20 25 – GHz

2

|

VCE = 2 V, IC = 5 mA, f = 2 GHz 14 17 – dB

Note 3

VCE = 2 V, IC = 5 mA, f = 2 GHz – 22 – dB VCE = 2 V, IC = 5 mA

-1

VCE = 2 V, IC = 5 mA

3

Note 4

, f = 2 GHz

Note 4

, f = 2 GHz

Collector Cut-off Current I Emitter Cut-off Current I DC Current Gain RF Characteristics Reverse Transfer Capacitance Gain Bandwidth Product f Noise Figure NF VCE = 2 V, IC = 2 mA, f = 2 GHz, ZS = Z Insertion Power Gain Maximum Stable Power Gain Output Power at 1 dB

Compression Point Output Power at Third Order

Intercept Point

2SC5507

opt

–1.21.5dB

–5–dBm

–15– –

Notes 1.

Pulse measurement PW ≤ 350 Emitter to base capacitance measured using capacitance meter (self-balancing bridge method) when

2.

the emitter is connected to the guard pin

S MSG =

3.

S

Collector current when P

4.

21 12

hFE CLASSIFICATION

Rank FB

Marking T78

FE

h

-1

50 to 100

s, Duty cycle ≤ 2%

µ

is output

2

Preliminary Data Sheet P13864EJ1V0DS00

TYPICAL CHARACTERISTICS (TA = +25 °C)

Thermal/DC Characteristics

Total Power Dissipation vs. Ambient Temperature, Case Temperature

250

200

(mW)

T

150

PT-TA: Free air

T-TA

:

Mounted on ceramic board

P

(15 mm × 15 mm, t = 0.6 mm)

T-TC

: When case temperature

P

is specified

50

40

(mA)

C

30

2SC5507

Collector Current vs. DC Base Voltage

VCE = 2 V

100

50

20

10

Collector Current I

Total Power Dissipation P

0

0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0 1.2 Ambient Temperature TA (°C), Case Temperature TC (°C)

Collector Current vs. Collector to Emitter Voltage

25

20

(mA)

C

15

10

5

Collector Current I

300 A

µ µ

280 A

µ

260 A

µ

240 A

µ

220 A

µ

200 A

µ

180 A

µ

160 A

µ

140 A

µ

120 A

µ

100 A

µ

80 A

µ µ

60 A

µ

40 A

IB = 20 A

200 100

FE

10

µ

DC Current Gain h

DC Base Voltage VBE (V)

DC Current Gain vs. Collector Current

1

012345

Collector to Emitter Voltage V

CE

(V)

0.001

0.01 0.1 1 10 100

C

Collector Current I

(mA)

VCE = 2 V

Capacitance/fT Characteristics

Reverse Transfer Capacitance vs. Collector to Base Voltage

0.30

0.25

0.20

0.15

0.10

0.05

Reverse Transfer Capacitance Cre (pF)

0 1.0 2.0 3.0 4.0

Collector to Base Voltage VCB (V)

30

f = 1 MHz

25

20

15

10

5

Gain Bandwidth Product fT (GHz)

5.0

Preliminary Data Sheet P13864EJ1V0DS00

0

Gain Bandwidth Product vs. Collector Current

VCE = 3 V f = 2 GHz

1

10 100

Collector Current IC (mA)

3

Gain Characteristics

Insertion Power Gain, Maximum Available Power Gain, Maximum Stable Power Gain vs. Frequency

40 35 30

(dB)

2

|

25

21e

20 15 10

5

Insertion Power Gain |S

Maximum Available Power Gain MAG (dB)

Maximum Stable Power Gain MSG (dB)

0

0.1 1.0 10.0

MSG

2

|S

21e

|

Frequency f (GHz)

VCE = 2 V I

C

= 5 mA

MAG

2SC5507

Insertion Power Gain, Maximum Stable Power Gain vs. Collector Current

30

MSG

(dB)

2

|

21e

|S

25

20

15

10

5

Maximum Stable Power Gain MSG (dB)

Insertion Power Gain

0

1 10 100 1 10 100

Collector Current IC (mA)

Output Characteristics

Output Power, Collector Current vs. Input Power

10

f = 1 GHz VCE = 2 V

5

(dBm)

out

0

Insertion Power Gain, Maximum Available Power Gain, Maximum Stable Power Gain vs. Collector Current

(dB)

2

|

21e

30

25

20

15

MSG

MAG

2

|S

21e

|

f = 1 GHz V

CE

= 2 V

2

|S

21e

|

f = 2 GHz V

CE

= 2 V

10

5

Insertion Power Gain |S

Maximum Available Power Gain MAG (dB)

Maximum Stable Power Gain MSG (dB)

0

C

Collector Current I

(mA)

Output Power, Collector Current vs. Input Power

25

P

out

20

(mA)

C

15

10

(dBm)

out

5

0

f = 2 GHz VCE = 2 V

25

P

out

20

(mA)

C

15

–5

Output Power P

–10

–15

–30 –25 –20 –15 –10 –5

Input Power Pin (dBm)

4

10

I

C

5

Collector Current I

0

Preliminary Data Sheet P13864EJ1V0DS00

–5

Output Power P

–10

–15

–30 –25 –20 –15 –10 –5

Input Power P

in

(dBm)

10

I

C

Collector Current I

5

0

Noise Characteristics

Noise Figure, Associated Gain vs. Collector Current Noise Figure, Associated Gain vs. Collector Current

6

5

G

a

f = 1.0 GHz V

CE

= 2 V

30

25

6

5

f = 1.5 GHz

CE

= 2 V

V

2SC5507

30

25

4

3

2

NF

Noise Figure NF (dB)

1

0

1 10 100

Collector Current I

C

(mA)

a

20

15

10

Associated Gain G

5

0

4

G

a

3

2

Noise Figure NF (dB)

NF

1

0

1 10 100

C

Collector Current I

(mA)

(dB)

Noise Figure, Associated Gain vs. Collector Current Noise Figure, Associated Gain vs. Collector Current

6

5

4

G

a

3

2

Noise Figure NF (dB)

1

NF

f = 2.0 GHz V

CE

= 2 V

30

25

(dB)

a

20

15

10

Associated Gain G

5

6

5

4

G

a

3

2

Noise Figure NF (dB)

NF

1

f = 2.5 GHz V

CE

= 2 V

(dB)

a

20

15

10

Associated Gain G

5

0

30

25

(dB)

a

20

15

10

Associated Gain G

5

0

1 10 100

Collector Current IC (mA)

0

1 10 100

C

Collector Current I

(mA)

0

Preliminary Data Sheet P13864EJ1V0DS00

5

S PARAMETER

VCE = 2 V, IC = 2 mA

2SC5507

Frequency S

11

21

S

12

S

22

S

GHz MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG.

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

1.6

1.7

1.8

1.9

0.90

0.89

0.88

0.87

0.86

0.84

0.83

0.82

0.80

0.79

0.77

0.76

0.74

0.72

0.70

0.68

0.66

–3.7

–7.1 –10.6 –14.2 –17.6 –21.0 –24.6 –28.0 –31.5

–35.0 –38.6 –42.0 –45.8 –49.4 –53.4 –57.1 –61.0 –65.0 –69.2

6.45

6.25

6.12

6.02

5.96

5.87

5.79

5.69

5.64

5.54

5.50

5.42

5.37

5.28

5.25

5.19

5.14

5.06

5.04

174.8

170.8

167.2

163.6

160.2

156.9

153.4

150.3

147.1

143.8

140.7

137.7

134.5

131.6

128.5

125.2

122.4

119.2

116.1

0.00

0.01

0.02

0.03

0.04

0.05

0.06

81.9

77.9

75.5

75.7

74.1

72.4

70.0

68.7

66.9

65.2

63.3

62.2

60.1

58.4

57.0

55.0

53.1

52.1

50.9

0.98

0.95

0.94

0.92

0.91

0.90

0.89

0.88

0.87

0.86

0.84

0.83

0.82

0.81

0.80

0.78

0.77

0.76

0.75

–3.6 –6.0 –7.9

–9.5 –11.0 –12.7 –14.3 –15.6 –17.3

–18.9 –20.3 –21.8 –23.3 –24.9 –26.4 –27.8 –29.3 –30.7 –32.2

2.0

2.1

2.2

2.3

2.4

2.5

2.6

2.7

2.8

2.9

3.0

4.0

5.0

6.0

7.0

8.0

9.0

10.0

0.64

0.62

0.60

0.58

0.56

0.55

0.52

0.50

0.47

0.42

0.40

0.47

0.49

0.56

0.63

0.69

0.74

0.79

–73.3 –77.7 –82.1 –86.9 –91.8

–97.1 –102.5 –108.7 –115.5 –120.2

–119.0 –159.3

163.9

141.2

123.9

111.6

102.1

95.1

4.98

4.91

4.82

4.78

4.68

4.62

4.53

4.46

4.29

4.11

4.06

3.24

2.74

2.34

2.00

1.70

1.44

1.19

113.0

109.9

106.9

103.6

100.6

97.5

94.1

90.8

87.5

85.2

84.6

66.5

45.5

26.7

9.3

–6.5 –21.4 –34.9

0.06

0.07

0.06

0.07

0.08

0.09

0.11

0.12

0.13

49.1

46.6

45.6

43.8

42.2

40.5

39.0

37.0

34.8

34.7

38.1

33.4

33.5

35.9

37.0

35.9

31.3

25.3

0.73

0.72

0.71

0.69

0.68

0.66

0.65

0.63

0.62

0.61

0.51

0.44

0.40

0.38

0.39

0.44

0.52

–33.6 –35.1 –36.3 –37.8 –39.2 –40.5 –41.9 –43.0 –44.1 –44.0

–45.4 –55.3 –69.8

–88.9 –112.9 –138.6 –163.4

175.7

6

Preliminary Data Sheet P13864EJ1V0DS00

VCE = 2 V, IC = 5 mA

2SC5507

Frequency S

11

21

S

12

S

22

S

GHz MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG.

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

1.6

1.7

1.8

1.9

0.82

0.80

0.79

0.78

0.76

0.74

0.72

0.70

0.68

0.66

0.63

0.61

0.58

0.56

0.53

0.51

0.49

0.46

–4.7

–9.2 –13.8 –18.0 –22.4 –26.6 –31.1 –35.3 –39.4

–43.6 –47.9 –51.9 –56.2 –60.3 –64.7 –68.9 –73.3 –77.6 –82.0

10.44

10.28

10.09

9.89

9.73

9.55

9.36

9.19

9.01

8.82

8.67

8.46

8.27

8.07

7.91

7.72

7.54

7.35

7.18

173.8

168.8

164.2

159.8

155.6

151.5

147.4

143.5

139.6

135.8

132.0

128.6

124.8

121.5

117.9

114.5

111.3

108.2

105.0

0.00

0.01

0.02

0.03

0.04

0.05

80.8

75.3

75.0

74.1

72.2

70.4

68.0

66.6

64.9

63.3

61.2

60.7

58.7

57.8

56.3

55.5

53.8

53.4

51.9

0.97

0.94

0.92

0.90

0.88

0.87

0.85

0.84

0.82

0.80

0.78

0.77

0.75

0.73

0.72

0.70

0.69

0.67

0.65

–4.1 –7.1

–9.4 –11.5 –13.4 –15.4 –17.3 –18.9 –20.8

–22.4 –23.9 –25.5 –26.9 –28.4 –29.7 –31.0 –32.3 –33.6 –34.9

2.0

2.1

2.2

2.3

2.4

2.5

2.6

2.7

2.8

2.9

3.0

4.0

5.0

6.0

7.0

8.0

9.0

10.0

11.0

12.0

0.44

0.42

0.40

0.38

0.36

0.35

0.33

0.32

0.30

0.25

0.23

0.31

0.42

0.51

0.58

0.65

0.71

0.76

0.78

0.79

–86.7 –91.6

–96.5 –101.9 –107.6 –113.6 –120.2 –127.9 –137.3 –144.7

–142.4

175.3

147.1

130.2

116.8

106.9

99.0

92.8

89.2

84.8

7.00

6.83

6.66

6.49

6.32

6.16

6.00

5.82

5.59

5.29

5.22

4.23

3.50

2.94

2.52

2.16

1.85

1.57

1.36

1.16

102.0

98.9

95.9

92.9

90.0

87.0

84.1

80.9

77.9

76.3

76.0

62.3

41.8

25.6

9.8

–5.0 –19.3 –32.6 –44.5 –55.1

0.05

0.06

0.08

0.09

0.10

0.12

0.13

0.14

0.15

51.6

49.6

48.3

47.4

46.2

45.3

44.6

42.5

44.1

48.2

46.8

45.6

42.7

38.6

34.4

28.7

22.9

17.8

13.4

0.64

0.62

0.61

0.60

0.58

0.57

0.55

0.53

0.52

0.44

0.36

0.31

0.29

0.31

0.36

0.44

0.53

0.60

–36.1 –37.2 –38.2 –39.5 –40.5 –41.7 –42.7 –43.4 –43.8 –43.2

–44.8 –48.3 –70.4

–89.6 –115.3 –143.0 –168.2

172.1

158.5

149.8

Preliminary Data Sheet P13864EJ1V0DS00

7

NOISE PARAMETER

CE

= 2 V

V

C

= 2 mA

I f = 2 GHz

Unstable area

3.5 dB

4.0 dB

2.0 dB

2.5 dB

3.0 dB

NF

min

1.5 dB

= 1.1 dB

Γopt

V

CE

= 2 V

C

= 2 mA

I f = 1 GHz

Unstable area

3.5 dB

4.0 dB

2.0 dB

2.5 dB

3.0 dB

NF

1.5 dB

min

= 1.0 dB

2SC5507

Γopt

VCE = 2 V, IC = 2 mA

f

(GHz)

0.8

0.9

1.0

1.5

1.8

1.9

2.0

2.5

VCE = 2 V, IC = 5 mA

f

(GHz)

0.8

0.9

1.0

1.5

1.8

1.9

2.0

2.5

NF

(dB)

0.93

0.95

0.97

1.08

1.14

1.16

1.18

1.29

NF

(dB)

1.59

1.60

1.62

1.63

1.65

min

G

(dB)

22.9

22.2

21.6

18.8

17.5

17.1

16.7

15.2

G

(dB)

24.7

24.1

23.4

20.7

19.3

18.9

18.5

16.9

a

Γ

opt

Rn/50

MAG. ANG.

0.54

0.53

0.51

0.50

0.49

0.44

a

13.3

14.9

16.4

24.6

30.3

32.4

34.6

47.7

Γ

opt

0.47

0.45

0.43

0.42

0.41

0.35

Rn/50

MAG. ANG.

0.38

0.36

0.34

0.33

0.32

0.26

10.7

11.9

13.2

20.5

25.7

27.5

29.4

40.1

0.43

0.41

0.38

0.37

0.32

8

Preliminary Data Sheet P13864EJ1V0DS00

PACKAGE DRAWINGS

Flat-lead 4-pin thin super mini-mold (unit: mm)

0.600.65

1.25

2.0 ± 0.1

+0.1

0.40

–0.05

2.05

1.25

T78

± ±

2SC5507

0.1

0.650.65

1.30

+0.1

–0.05

0.30 (LEADS1,3,4)

0.05 ±

0.59

Pin connections

1. Emitter

2. Collector

3. Emitter

4. Base

12

43

+0.1

–0.05

0.11

Preliminary Data Sheet P13864EJ1V0DS00

9

2SC5507

SOLDERING CONDITIONS

Solder this product under the following recommended conditions. For soldering methods and conditions other than those recommended, consult NEC.

Soldering Method(s) Soldering Conditions Recommended Conditions Sym bol

Infrared reflow Package peak temperature: 235 °C, Time: 30 sec max. (210 °C min.),

Number of times: twice max., Maximum number of days: None

VPS Package peak temperature: 215 °C, Time: 40 sec max. (200 °C min.),

Number of times: twice max., Maximum number of days: None

Wave soldering Solder bat h temperature: 260 °C, Time: 10 sec max., Number of

times: once, Max i m um num ber of days: None

Number of days in storage after the dry pack has been opened. The storage conditions are at 25 °C,

Note

65% RH MAX.

Caution Do not use two or more soldering methods in combination.

For details of the recommended soldering conditions, refer to information document

Mounting Technology Manual (C10535E)

.

IR35-00-2

VP15-00-2

WS60-00-1

Semiconductor Device

10

Preliminary Data Sheet P13864EJ1V0DS00

[MEMO]

2SC5507

Preliminary Data Sheet P13864EJ1V0DS00

11

2SC5507

No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application.

Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc.

The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product.

M4 96. 5

Datasheet 2SC5507-T2, 2SC5507 Datasheet (NEC)

Specifications and Main Features

Frequently Asked Questions

User Manual