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Description:
2SC1306
Silicon NPN Transistor
Final RF Power Output
The 2SC1306 is a silicon NPN transistor in a TO220 type
case designed for use in high power output amplifier
stages such as citizen band communications equipment.
WIN
Transceiver
Absolute Maximum Ratings:
Collector-Emitter Voltage (RBE = 150 Ohm), V
Collector-Base Voltage, V
Emitter-Base Voltage, V
Collector Current, I
Collector Power Dissipation (TA = +25°C), P
Collector Power Dissipation (TC = +50°C), P
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics:
Continuous
Peak
(TC = +25°C unless otherwise specified)
CER
CBO
EBO
C
D
D
J
-
stg
(TC = +25°C unless otherwise specified)
55° to +150°C
75V
80V
5V
3A
5A
1.2W
10W
+150°C
B C
E
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Output Capacitance
Power Output
Collector Efficiency
h
P
V
V
I
I
V
V
f
Symbol
(BR)CBOIC
V
(BR)CERIC
(BR)EBOIE
CBO
EBO VEB
FE
CE(sat) IC
BE(sat) IC
T
C
ob
O
Test Conditions
= 100µA, IB = 0
= 1mA, RBE = 150 Ohm
= 100µA, IC = 0
= 40V IE = 0
VCB
= 4V, IC = 0
VCE = 5V, IC = 0.5A
= 1A, IB = 0.1A
= 1A, IB = 0.1A
VCE = 10V, IC = 0.1A
V
= 10V, f = 1MHz
CB
VCC = 12V, Pin = 0.2W, f = 27MHz
5 - - V
- -
- -
-
-
Min
Typ
Max
80
- - V
75
- - V
10 µA
10 µA
25
-
100
25
- -
4.0
60
- - %
200
0.15
0.60
0.9
1.2
150
- - W
Unit
V
V
-
MHz
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