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Transistors
2SC1573, 2SC1573A, 2SC1573B
Silicon NPN triple diffusion planar type
For high breakdown voltage general amplification
For small TV video output
Complementary to 2SC1573 and 2SA0879
■ Features
• High collector-emitter voltage (Base open) V
• High transition frequency f
T
CEO
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage
(Emitter open)
2SC1573 V
2SC1573A
2SC1573B
Collector-emitter voltage
(Base open)
2SC1573 V
2SC1573A
2SC1573B
Emitter-base voltage
(Collector open)
2SC1573 V
2SC1573A
2SC1573B
Collector current I
Peak collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T
CBO
CEO
EBO
C
CP
C
j
stg
250 V
300
400
200 V
300
400
5V
7
70 mA
100 mA
1W
150 °C
−55 to +150 °C
0.7
±0.1
0.45
5.9
132
+0.2
–0.1
±0.2
(1.27)(1.27)
2.54
+0.3
0.7
–0.2
±0.2
8.6
±0.5
13.5
(3.2)
±0.15
Unit: mm
4.9
±0.2
+0.2
0.45
–0.1
1: Emitter
2: Collector
3: Base
EIAJ: SC-51
TO-92L-A1 Package
Publication date: November 2002 SJC00108BED
1
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2SC1573, 2SC1573A, 2SC1573B
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage
(Base open)
2SC1573 V
2SC1573A
CEOIC
2SC1573B
Emitter-base voltage
(Collector open)
2SC1573 V
2SC1573A
EBOIE
2SC1573B
Collector-base cut-off current
(Emitter open)
2SC1573 I
2SC1573A
CBO
2SC1573B
Forward current transfer ratio 2SC1573 hFE *VCE = 10 V, IC = 5 mA 60 220
2SC1573A
2SC1573B
Collector-emitter saturation voltage V
CE(sat)IC
Transition frequency f
Collector output capacitance
(Common base, input
open circuited)
2SC1573 C
2SC1573A
2SC1573B
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification (2SC1573 for ranks Q and R only)
Rank P Q R
h
FE
30 to 100 60 to 150 100 to 220
= 100 µA, IB = 0 200 V
300
400
= 1 µA, IC = 05V
7
7
VCB = 12 V, IE = 02µA
VCB = 200 V, IE = 010
30 220
= 50 mA, IB = 5 mA 1.2 V
VCB = 10 V, IE = −10 mA, f = 200 MHz 50 80 MHz
T
VCB = 10 V, IE = 0, f = 1 MHz 5 10 pF
ob
48
48
PC T
1.2
)
1.0
W
(
C
0.8
0.6
0.4
0.2
Collector power dissipation P
0
0 16040 12080
Ambient temperature Ta (°C
2
a
)
120
100
)
mA
(
80
C
60
40
Collector current I
20
0
0108264
Collector-emitter voltage VCE (V
IC V
1.6 mA
1.4 mA
1.2 mA
1.0 mA
0.8 mA
SJC00108BED
1.8 mA
CE
= 25°C
T
a
IB = 2 mA
0.6 mA
0.4 mA
0.2 mA
120
100
)
mA
(
80
C
60
40
Collector current I
20
0
0 2.01.60.4 1.20.8
)
IC V
BE
VCE = 10 V
25°C
Ta = 75°C
Base-emitter voltage VBE (V
−25°C
)
Page 3
2SC1573, 2SC1573A, 2SC1573B
IC I
120
100
B
)
mA
(
80
C
60
40
Collector current I
20
0
0 2.01.60.4 1.20.8
Base current IB (mA
hFE I
360
300
FE
240
180
120
Forward current transfer ratio h
60
0
0.1 1 10 100
Ta = 75°C
C
VCE = 10 V
25°C
−25°C
Collector current IC (mA
VCE = 10 V
= 25°C
T
a
)
)
V
I
100
)
V
(
CE(sat)
10
1
0.1
Collector-emitter saturation voltage V
0.01
0.1 1 10 100
CE(sat)
25°C
C
IC / IB = 10
Ta = 75°C
−25°C
Collector current IC (mA
fT I
E
VCB = 10 V
= 25°C
T
a
)
MHz
(
T
160
140
120
100
80
60
40
Transition frequency f
20
0
−1 −10 −100
Emitter current IE (mA
IB V
3.0
2.5
BE
VCE = 10 V
T
= 25°C
a
)
2.0
mA
(
B
1.5
1.0
Base current I
0.5
0
)
)
0 1.00.80.2 0.60.4
CB
IE = 0
f = 1 MHz
= 25°C
T
a
)
)
Base-emitter voltage VBE (V
Cob V
10
(pF)
ob
C
8
6
4
2
Collector output capacitance
(Common base, input open circuited)
0
110100
Collector-base voltage VCB (V
)
T
(
I
a
CBO
)
= 25°C
a
T
(
CBO
I
I
T
4
10
3
10
2
10
10
1
020016040 12080
CBO
Ambient temperature Ta (°C
a
VCB = 250 V
I
T
4
10
3
10
EBO
)
)
a
T
(
= 25°C
2
a
10
T
(
EBO
I
EBO
I
10
1
0 20016040 12080
)
Ambient temperature Ta (°C
a
VEB = 5 V
1 000
)
mA
(
C
Collector current I
)
SJC00108BED
Safe operation area
Single pulse
= 25°C
T
a
I
CP
100
I
C
DC
10
1
0.1
1 10 100 1 000
Collector-emitter voltage VCE (V
t = 10 ms
t = 1 ms
)
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Page 4
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2002 JUL
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