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Transistors
2SC0829 (2SC829)
Silicon NPN epitaxial planar type
For high-frequency amplification
5.0
±0.2
Unit: mm
4.0
±0.2
■ Features
2.5
+0.6
–0.2
±0.2
0.7
±0.2
2.3
±0.2
5.1
±0.5
12.9
+0.15
0.45
–0.1
1: Emitter
2: Collector
3: Base
TO-92-B1 Package
• Optimum for RF amplification, oscillation, mixing, and IF stage
of FM/AM radios
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
Collector-emitter voltage (Base open) V
Emitter-base voltage (Collector open) V
Collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T
CBO
CEO
EBO
C
C
j
stg
30 V
20 V
5V
30 mA
400 mW
150 °C
−55 to +150 °C
0.45
0.7
2.5
+0.15
–0.1
±0.1
+0.6
–0.2
123
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
Collector-emitter voltage (Base open) V
Emitter-base voltage (Collector open) V
Forward current transfer ratio
*
CBOIC
CEOIC
EBOIE
h
FE
Transition frequency f
Reverse transfer capacitance C
(Common emitter)
Reverse transfer impedance Z
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Rank B C
h
FE
70 to 160 110 to 250
= 10 µA, IE = 030V
= 2 mA, IB = 020V
= 10 µA, IC = 05V
VCE = 10 V, IC = 1 mA 70 250
VCB = 10 V, IE = −1 mA, f = 200 MHz 150 230 MHz
T
VCB = 10 V, IE = −1 mA, f = 10.7 MHz 1.3 1.6 pF
re
VCB = 10 V, IE = −1 mA, f = 2 MHz 60 Ω
rb
Note) The part number in the parenthesis shows conventional part number.
Publication date: March 2003 SJC00098CED
1
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2SC0829
PC T
500
400
(mW)
C
300
200
100
Collector power dissipation P
0
0 16040 12080
Ambient temperature Ta (°C)
IB V
120
100
80
(µA)
B
60
40
Base current I
20
a
BE
VCE = 10 V
= 25°C
T
a
IC V
12
IB = 100 µA
10
8
(mA)
C
6
4
Collector current I
2
0
0 4 8 12 16
Collector-emitter voltage VCE (V)
V
I
CE(sat)
(V)
CE(sat)
100
10
1
0.1
25°C
CE
80 µA
60 µA
Ta = 25°C
40 µA
20 µA
C
IC / IB = 10
Ta = 75°C
−25°C
IC V
60
50
40
(mA)
C
30
20
Ta = 75°C
BE
25°C
−25°C
Collector current I
10
0
02.01.60.4 1.20.8
Base-emitter voltage VBE (V)
hFE I
300
250
FE
200
150
100
Forward current transfer ratio h
50
C
Ta = 75°C
25°C
−25°C
VCE = 10 V
VCE = 10 V
0
0 1.20.4 0.8 1.6
Base-emitter voltage VBE (V)
fT I
600
500
(MHz)
400
T
300
200
Transition frequency f
100
0
− 0.1 −1 −10 −100
E
VCB = 10 V
6 V
Emitter current IE (mA)
2
Ta = 25°C
Collector-emitter saturation voltage V
0.01
0.1 1 10 100
Collector current IC (mA)
Zrb I
80
70
(Ω)
rb
60
50
40
30
20
Reverse transfer impedance Z
10
0
− 0.1 −1 −10
E
f = 2 MHz
= 25°C
T
a
VCB = 6 V
Emitter current IE (mA)
SJC00098CED
10 V
0
0.1 1 10 100
Collector current IC (mA)
Cre V
2.4
2.0
(pF)
re
C
1.6
1.2
0.8
0.4
(Common emitter)
Reverse transfer capacitance
0
0.1 1 10 100
CE
Collector-emitter voltage VCE (V)
IC = 1 mA
f = 10.7 MHz
= 25°C
T
a
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2SC0829
Cob V
1.6
(pF)
1.4
ob
C
1.2
1.0
0.8
0.6
0.4
0.2
Collector output capacitance
(Common base, input open circuited)
0
1 10 100
CB
IE = −1 mA
f = 1 MHz
T
Collector-base voltage VCB (V
bfe g
0
− 0.4 mA
25
58
100
−20
− 0.1 mA
(mS)
fe
100
58
100
−40
100
58
−60
−80
−100
Forward transfer susceptance b
−120
58
= −7 mA
I
E
0 1008020 6040
0.45
10.7
−1 mA
25
25
fe
0.45
10.7
−2 mA
f = 10.7 MHz
yfe = gfe + jb
VCE = 10 V
Forward transfer conductance gfe (mS)
= 25°C
a
−4 mA
bie g
12
yie = gie + jb
VCE = 10 V
10
(mS)
8
ie
6
10.7
4
Input susceptance b
)
1.2
1.0
(mS)
0.8
oe
0.6
0.4
Output susceptance b
fe
0.2
IE = − 0.4 mA
−1 mA
−2 mA
2
−4 mA
−7 mA
f = 0.45 MHz
0
020164128
Input conductance gie (mS)
10.7
f = 0.45 MHz
0
0 1.00.80.2 0.60.4
ie
58
25
boe g
58
25
ie
100
oe
100
−7 mA
−4 mA
−2 mA
−1 mA
− 0.4 mA
IE = − 0.1 mA
yoe = goe + jb
VCE = 10 V
0
yre = gre + jb
VCE = 10 V
− 0.5
(mS)
re
−1.0
−1.5
−2.0
−2.5
Reverse transfer susceptance b
−3.0
− 0.5 0− 0.1− 0.4 − 0.2− 0.3
Reverse transfer conductance gre (mS)
oe
bre g
re
re
f = 0.45 MHz
10.7
− 0.4 mA
−1 mA
−2 mA
−4 mA
100
IE = −7 mA
25
58
Output conductance goe (mS)
SJC00098CED
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and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
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(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
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• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
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the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
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(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
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permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL
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