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Transistors
2SC1360, 2SC1360A
Silicon NPN epitaxial planar type
For intermediate frequency amplification of TV image
■ Features
• High transition frequency f
• Large collector power dissipation P
T
C
■ Absolute Maximum Ratings Ta = 25°C
0.7
±0.1
5.9
±0.2
+0.3
±0.2
8.6
–0.2
0.7
±0.5
13.5
4.9
Unit: mm
±0.2
Parameter Symbol Rating Unit
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
2SC1360 V
2SC1360A
2SC1360 V
2SC1360A
Emitter-base voltage (Collector open) V
Collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T
CBO
CEO
EBO
C
C
j
stg
50 V
60
45 V
60
4V
50 mA
1W
150 °C
−55 to +150 °C
0.45
+0.2
–0.1
132
(1.27)(1.27)
2.54
(3.2)
±0.15
+0.2
0.45
–0.1
1: Emitter
2: Collector
3: Base
EIAJ: SC-51
TO-92L-A1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
Emitter-base voltage (Collector open) V
Collector-base cutoff current (Emitter open)
Forward current transfer ratio h
Collector-emitter saturation voltage V
2SC1360 V
2SC1360A
2SC1360 V
2SC1360A
CBOIC
CEOIC
EBOIE
I
CBO
FE
CE(sat)IC
Transition frequency 2SC1360 f
2SC1360A
Reverse transfer capacitance
(Common emitter)
2SC1360 C
2SC1360A
Power gain 2SC1360 G
2SC1360A
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
= 100 µA, IE = 050 V
60
= 3 mA, IB = 045V
IC = 1 mA, IB = 060
= 100 µA, IC = 04 V
VCB = 20 V, IE = 0 100 nA
VCE = 10 V, IC = 10 mA 20 50 100
= 20 mA, IB = 2 mA 0.4 V
VCB = 10 V, IE = −10 mA, f = 100 MHz 300 500 MHz
T
300
VCB = 10 V, IE = −1 mA, f = 10.7 MHz 0.96 1.5 pF
re
1.5
VCB = 10 V, IE = −10 mA, f = 58 MHz 22 26 30 dB
P
22 30
Publication date: February 2003 SJC00103BED
1
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2SC1360, 2SC1360A
PC T
1.2
)
1.0
W
(
C
0.8
0.6
0.4
0.2
Collector power dissipation P
0
0 16040 12080
Ambient temperature Ta (°C
V
I
)
V
(
CE(sat)
100
10
1
0.1
CE(sat)
25°C
a
C
IC / IB = 10
Ta = 75°C
−25°C
IC V
hFE I
Ta = 75°C
−25°C
25°C
CE
C
IB = 2.0 mA
1.8 mA
1.6 mA
1.4 mA
1.2 mA
1.0 mA
0.8 mA
0.6 mA
0.4 mA
0.2 mA
VCE = 10 V
60
50
)
mA
(
40
C
30
20
Collector current I
10
0
02.01.60.4 1.20.8
)
600
VCB = 10 V
T
500
)
MHz
(
400
T
300
200
Transition frequency f
100
80
)
60
mA
(
C
40
20
Collector current I
0
0108264
)
Collector-emitter voltage VCE (V
120
100
FE
80
60
40
Forward current transfer ratio h
20
IC V
BE
25°C
Ta = 75°C
VCE = 10 V
−25°C
Base-emitter voltage VBE (V
fT I
E
= 25°C
a
)
Collector-emitter saturation voltage V
0.01
0.1 1 10 100
Collector current IC (mA
Cob V
3.0
(pF)
ob
2.5
C
2.0
1.5
1.0
0.5
Collector output capacitance
(Common base, input open circuited)
0
1 10 100
CB
Collector-base voltage VCB (V
2
)
IE = 0
f = 1 MHz
= 25°C
T
a
0
0.1 1 10 100
CE
IC = 1 mA
f = 10.7 MHz
= 25°C
T
a
)
)
Collector current IC (mA
Cre V
2.4
2.0
(pF)
re
C
1.6
1.2
0.8
0.4
(Common emitter)
Reverse transfer capacitance
0
1 10 100
)
Collector-emitter voltage VCE (V
0
− 0.1 −1 −10 −100
Emitter current IE (mA
GP I
30
25
)
20
dB
(
P
15
10
Power gain G
5
0
− 0.1 −1 −10 −100
E
VCB = 10 V
f = 58 MHz
T
= 25°C
a
Emitter current IE (mA
)
)
SJC00103BED
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Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
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tics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license.
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Consult our sales staff in advance for information on the following applications:
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(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment.
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2002 JUL
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