Datasheet 2SA743A, 2SA743 Datasheet (HIT)

2SA743, 2SA743A

Silicon PNP Epitaxial

Application

Low frequency power amplifier complementary pair with 2SC1212 and 2SC1212A

Outline

TO-126 MOD

1. Emitter

2. Collector

1

2

3

3. Base

Absolute Maximum Ratings (Ta = 25°C)

Ratings

Item Symbol 2SA743 2SA743A Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P

Junction temperature Tj 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 °C

Note: 1. Value at TC = 25°C.

C

PC*

CBO

CEO

EBO

C

1

–50 –80 V
–50 –80 V
–4 –4 V
–1 –1 A

0.75 0.75 W
88

2SA743, 2SA743A

Electrical Characteristics (Ta = 25°C)

2SA743 2SA743A

Item Symbol Min Typ Max Min Typ Max Unit Test conditions

Collector to base
breakdown voltage

Collector to emitter
breakdown voltage

Emitter to base
breakdown voltage

Collector cutoff current I

DC current tarnsfer ratio hFE*

Base to emitter voltage V

Collector to emitter
saturation voltage

Gain bandwidth product f

Note: 1. The 2SA743 and 2SA743A is grouped by hFE as follows.

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

CER

I

CER

h

FE

BE

V

CE(sat)

T

–50 — — –80 — — V IC = –1 mA, IE = 0

–50 — — –80 — — V IC = –10 mA, RBE = ∞

–4 — — –4 — — V IE = –1 mA, IC = 0

— — –20 — — — µAVCE = –50 V, RBE = 1

kΩ

— — — — — –20 VCE = –80 V, RBE = 1

kΩ

1

60 120 200 60 120 200 VCE = –4 V, IC = –50

mA

20 — — 20 — — VCE = –4 V, IC = –1 A

(pulse)

— –0.65 –1.0 — –0.65 1.0 V VCE = –4 V, IC = –50

mA

— –0.75 –1.5 — –0.75 –1.5 V IC = –1 A, IB = –0.1 A

— 120 — — 120 — MHz VCE = –4 V, IC = –30

mA

BC

60 to 120 100 to 200

2

2SA743, 2SA743A

Maximum Collector Dissipation Curve

0.8

0.75 W

(W)

C

0.6

0.4

0.2

Collector power dissipation P

0 50 100 150 200

Ambient temperature Ta (°C)

Typical Output Charactristics (1)

–200

–160

(mA)

C

–1.6

–1.4

–1.2

–1.0

–0.8

T

C

–120

–0.6

–80

–40

Collector current I

–0.4

–0.2 mA

= 25°C

Maximum Collector Dissipation Curve

8

(W)

C

6

4

2

Collector power dissipation P

0 50 100 150 200

Case temperature T

(°C)

C

Typical Output Characteristics (2)

1.0

0.8

(A)

C

0.6

–28

–24

–20

–16

–12

–10

–8

–6

TC = 25°C

–4

0.4

–2 mA

Collector currnet I

0.2

IB = 0

0 –10 –20 –30 –40 –50

Collector to emitter voltage VCE (V)

IB = 0

0–1

–2

Collector to emitter voltage V

–3 –4 –5

(V)

CE

3

2SA743, 2SA743A

Typical Transfer Characteristics

VCE = –4 V
Pulse

(A)

C

–1.0

–0.5

–0.2

–0.1

T

= 75°C

C

25

–25

FE

180

160

140

120

DC Currnet Transfer Ratio vs.

Collector Current

= 75°C

T

C

VCE = –4 V
Pulse

25

–0.05

Collector current I

–0.02

–0.01

0 –0.6 –1.0–0.2 –0.4 –0.8 –1.2

Base to emitter voltage V

BE

(V)

100

80

DC current transfer ratio h

–25

60

–0.01 –0.05 –0.2 –1.0–0.02 –0.1 –0.5

Collector current IC (A)

4

Unit: mm

2.3 ± 0.3

0.8

2.29 ± 0.5

8.0 ± 0.5

120°

120°

φ

120°

3.7 ± 0.7

1.1

2.29 ± 0.5

3.1

11.0 ± 0.5

15.6 ± 0.5

+0.15
–0.1

0.55

2.7 ± 0.4

1.2

Hitachi Code
JEDEC
EIAJ

(reference value)

Weight

TO-126 Mod
—
—

0.67 g

Cautions

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received the latest product standards or specifications before final design, purchase or use.

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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

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