Datasheet 2SA715 Datasheet (HIT)

2SA715

Silicon PNP Epitaxial

Application

Low frequency power amplifier complementary pair with 2SC1162

Outline

TO-126 MOD

1. Emitter

2. Collector

1

2

3

3. Base

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Rating Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current I
Collector power dissipation P

Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. Value at TC = 25°C

CBO

CEO

EBO

C

C(peak)

C

PC*

1

–35 V
–35 V
–5 V
–2.5 A
–3 A

0.75 W
10 W

2SA715

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Collector to base breakdown

V

(BR)CBO

voltage
Collector to emitter breakdown

V

(BR)CEO

voltage
Emitter to base breakdown

V

(BR)EBO

voltage
Collector cutoff current I

CBO

DC current transfer ratio hFE*

h

FE

Base to emitter voltage V

Collector to emitter saturation

V

BE

CE(sat)

voltage
Gain bandwidth product f

T

Note: 1. The 2SA715 is grouped by hFE as follows.

–35 — — V IC = –1 mA, IE = 0

–35 — — V IC = –10 mA, RBE = ∞

–5 — — V IE = –1 mA, IC = 0

— — –20 µAVCB = –35 V, IE = 0

1

60 — 320 VCE = –2 V, IC = –0.5 A
20 — — VCE = –2 V, IC = –1.5 A

(Pulse test)

— –1.0 –1.5 V VCE = –2 V, IC = –1.5 A

(Pulse test)

— –0.5 –1.0 V IC = –2 A, IB = –0.2 A

(Pulse test)

— 160 — MHz VCE = –2 V, IC = –0.2 A

(Pulse test)

BCD

60 to 120 100 to 200 160 to 320

Maximum Collector Dissipation

Curve

0.8

0.6

0.4

0.2

Collector power dissipation Pc (W)

0 50 100 150 200

Ambient temperature Ta (°C)

–5

IC max(DC Operation)

–2

(A)

C

–1.0

–0.5

Collector current I

–0.2

–0.1

–1 –2 –5 –10

Area of Safe Operation

TC = 25°C

(–4 V,–2.5 A)

P

C

= 10 W

(–35 V,–0.28 A)

–20 –50

Collector to emitter voltage V

CE

(V)

2

2SA715

Maximum Collector Dissipation Curve

16

(W)

C

12

8

4

Collector power dissipation P

0 50 100 150 200

Case temperature TC (°C)

Typical Transfer Charecteristics

–2.0
–1.0

VCE = –2 V

–0.5

(A)

C

–0.2
–0.1

–0.05

Collector current I

–0.02

25

= 75°C

–25

C

T

–2.0

–1.6

(A)

C

–1.2

TC = 25°C

–26

–23

–20

–17

–14

–12

–10

Typical Output Characteristics

–0.8

–8
–6

Collector current I

–0.4

–4

–2 mA

IB = 0

0 –1–2–3–4–5

Collector to emitter voltage VCE (V)

DC Current Transfer Ratio vs.

Collector Current

240

VCE = –2 V

200

FE

160

120

80

40

DC current transfer ratio h

TC = 75°C

25

–25

–0.01

0 –0.4 –0.8 –1.2–0.2 –0.5

Base to emetter voltage VBE (V)

–1.0 –1.4

0

–0.01 –0.02 –0.1 –0.5 –2–0.2 –1.0–0.05

Collector current IC (A)

3

Unit: mm

2.3 ± 0.3

0.8

2.29 ± 0.5

8.0 ± 0.5

120°

120°

120°

3.7 ± 0.7

1.1

2.29 ± 0.5

φ

3.1

11.0 ± 0.5

15.6 ± 0.5

+0.15
–0.1

0.55

2.7 ± 0.4

1.2

Hitachi Code
JEDEC
EIAJ

(reference value)

Weight

TO-126 Mod
—
—

0.67 g

Cautions

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received the latest product standards or specifications before final design, purchase or use.

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contact Hitachi’s sales office before using the product in an application that demands especially high
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of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

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