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SavantIC Semiconductor Product Specification
Silicon PNP Power Transistors 2SA699 2SA699A
ESCRIPTION
D
·With TO-202 package
·Complement to type 2SC1226/1226A
APPLICATIONS
·Power amplifier applications
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
Fig.1 simplified outline (TO-202) and symbol
Absolute maximum ratings (Ta=25)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
2SA699 -40
V
Collector-base voltage
CBO
2SA699A
2SA699 -32
V
Collector-emitter voltage
CEO
2SA699A
V
Emitter-base voltage Open collector -5 V
EBO
I
C
ICM Collector current-peak -3 A
I
B
P
C
Collector current -2 A
Base current -0.6 A
Collector power dissipation TC=25 10 W
Open emitter
Open base
V
-50
V
-40
T
T
stg
Junction temperature 150
j
Storage temperature -55~150
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SavantIC Semiconductor Product Specification
Silicon PNP Power Transistors 2SA699 2SA699A
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
Collector-emitter saturation voltage IC=-1.5A ;IB=-0.15A -0.4 -1.0 V
CEsat
V
Base-emitter saturation voltage IC=-2A ;IB=-0.2 A -1.5 V
BEsat
2SA699 -40
V
(BR)CBO
Collector-base
breakdown voltage
2SA699A
I
=-1mA;IE=0
C
V
-50
2SA699 -32
V
(BR)CEO
I
CBO
I
CEO
I
EBO
Collector-emitter
breakdown voltage
2SA699A
IC=-10mA; IB=0
V
-40
Collector cut-off current VCB=-20V; IE=0 -1 µA
Collector cut-off current VCE=-12V; IB=0 -100 µA
Emitter cut-off current VEB=-5V; IC=0 -100 µA
hFE DC current gain IC=-1A ; VCE=-5V 50 220
COB Output capacitance IE=0; VCB=-5V;f=1MHz 70 pF
f
T
Transition frequency IE=0.5A ; VCB=-5V 150 MHz
hFE classifications
P Q R
50-100 80-160 100-220
2
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SavantIC Semiconductor Product Specification
Silicon PNP Power Transistors 2SA699 2SA699A
PACKAGE OUTLINE
Fig.2 outline dimensions
3
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SavantIC Semiconductor Product Specification
Silicon PNP Power Transistors 2SA699 2SA699A
4
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SavantIC Semiconductor Product Specification
Silicon PNP Power Transistors 2SA699 2SA699A
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