Datasheet 2SA1952TLQ Specification

Page 1
Datasheet
www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved.
2SA1952
PNP -5A -60V Middle Power Transistor
l
l
Features
1) Suitable for Middle Power Driver
2) Complementary NPN Types : 2SC5103
3) Low V
CE(sat)
V
CE(sat)
= -0.3V(Max.) (IC/IB= -3A/ -0.15A)
V
CE(sat)
= -0.5V(Max.) (IC/IB= -4A / -0.2A)
4) Lead Free/RoHS Compliant.
l
Inner circuit
l
Applications
Motor driver , LED driver Power supply
l
Packaging specifications
l
Absolute maximum ratings (Ta = 25°C)
Collector-base voltage Collector-emitter voltage Emitter-base voltage
DC Pulsed
Junction temperature Range of storage temperature
*1 Mounted on a substrate
*2 Tc=25°C
Parameter
Value
V
CEO
-60V
I
C
-5A
CPT3
Basic
ordering
unit (pcs)
Marking
2SA1952
CPT3
6595
TL
330
16
2,500
A1952
Part No.
Package
Package
size
(mm)
Taping
code
Reel size
(mm)
Tape width
(mm)
Parameter
Symbol
Values
Unit
V
CBO
-100
V
V
CEO
-60
V
Power dissipation
V
EBO
-5
V
Collector current
I
C
-5
A
I
CP
-10
A
T
stg
-55 to +150
°C
P
D
*1
1
W
T
j
150
°C
P
D
*2
10
W
2SA1952
(SC-63)
<SOT-428>
Base
Emitter
Collector
Collector
Base
Emitter
1/6
2013.07 - Rev.B
Page 2
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Data Sheet
2SA1952
lElectrical characteristics (Ta = 25°C)
*1 Plused *2 See switching time test circuit
lhFE rank categories
--1.5
ms
Turn-on time
t
on
*2
IC= -3A IB1= -0.15A IB2=0.15A VCC⋍ -30V
-
h
FE
120 to 270
Rank
Q
-
0.3
Fall time
-
0.3
ms
ms
Storage time
t
stg
*2
-
-
t
f
*2
hFE 1
*1
V
CE
= -2V, IC = -1A
120pF-
-0.5
V
Collector-emitter saturation voltage
IC = -4A, IB = -0.2A
-
-
-1.5
IC = -3A, IB = -0.15A
MHz
Output capacitance
C
ob
V
CB
= -10V, IE = 0A
f = 1MHz
-
130
-
Transition frequency
f
T
*1
V
CE
= -10V, IE = 0.5A
f=30MH
Z
Unit
VmA-V-
V
-10mA-10
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Collector-emitter breakdown voltage
BV
CEO
IC = -1mA
-60
-V-
-
Collector-base breakdown voltage
BV
CBO
IC = -50mA
-100
-
-
Emitter-base breakdown voltage
BV
EBO
IE = -50mA
-5
-
V
Collector cut-off current
I
CBO
V
CB
= -100V
-
-
Emitter cut-off current
I
EBO
V
EB
= -5V
-
-1.2
IC = -4A, IB = -0.2A
--80-V
Base-emitter saturation voltage
V
CE(sat)
*1
V
BE(sat)
*1
DC current gain
hFE 2
*1
V
CE
= -2V, IC = -3A
40----
270
-
IC = -3A, IB = -0.15A
-
-
-0.3
2/6
2013.07 - Rev.B
Page 3
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Data Sheet
2SA1952
lElectrical characteristic curves(Ta = 25°C)
10
100
1000
-0.01 -0.1 -1 -10
VCE= -5V
-2V
-1V
Ta=25ºC Pulsed
Fig.1 Ground Emitter Propagation Characteristics
COLLECTOR CURRENT : I
C
[A]
BASE TO EMITTER VOLTAGE : V
BE
[V]
Fig.2 Typical Output Characteristics
COLLECTOR CURRENT : I
C
[A]
COLECTOR TO EMITTE VOLTAGE : V
CE
[V]
Fig.3 DC Current Gain vs. Collector Current (I)
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : IC [A]
Fig.4 DC Current Gain vs. Collector Current (II)
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : IC [A]
3/6
2013.07 - Rev.B
Page 4
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Data Sheet
2SA1952
lElectrical characteristic curves(Ta = 25°C)
COLLECTOR-EMITTER
SATURATION VOLTAGE : V
CE(sat)
[V]
-0.01
-0.1
-1
-0.01 -0.1 -1 -10
IC / IB =20/1
10/1
Ta=25ºC
Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current (I)
COLLECTOR-EMITTER
SATURATION VOLTAGE : V
CE(sat)
[V]
COLLECTOR CURRENT : IC [A]
Fig.6 Collector-Emitter Saturation Voltage vs. Collector Current (II)
COLLECTOR CURRENT : IC [A]
Fig.7 Base-Emitter Saturation Voltage vs. Collector Current
BASE-EMITTER
SATURATION VOLTAGE : V
BE(sat)
[V]
COLLECTOR CURRENT : IC [A]
Fig.8 Gain Bandwidth Product vs. Emitter Current
TRANSITION FREQUENCY : f
T
[MHz]
EMITTER CURRENT :IE [A]
4/6
2013.07 - Rev.B
Page 5
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Data Sheet
2SA1952
lElectrical characteristic curves(Ta = 25°C)
-0.01
-0.1
-1
-10
-100
-0.1 -1 -10 -100
Ta=25ºC Single non repetitive pulse
10ms
1ms
DC (Tc=25ºC)
Fig.9 Collector output capacitance vs. Collector-Base Voltage
COLLECTOR OUTPUT CAPACITANCE : Cob [pF]
COLLECTOR - BASE VOLTAGE : VCB [V]
Fig.10 Safe Operating Area
COLLECTOR CURRENT : I
C
[A]
COLLECTOR TO EMITTER VOLTAGE : VCE [V]
5/6
2013.07 - Rev.B
Page 6
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Data Sheet
2SA1952
lDimensions (Unit : mm)
Dimension in mm / inches
CPT3
D
b1
e
b
b3
b2
L3
A2
H
A1
A3
c
L1
Lp
x B A
L E L2
l3
l2
l1
b6
b5e
L4
c1
B
A
Pattern of terminal position areas
[Not a recommended pattern of soldering pads]
MIN MAX MIN MAX
A1
0.00 0.15 0.000 0.006
A2
2.20 2.50 0.087 0.098
A3
b
0.55 0.75 0.022 0.030
b1
5.00 5.30 0.197 0.209
b2b3c
0.40 0.60 0.016 0.024
c1
0.40 0.60 0.016 0.024
D
6.30 6.70 0.248 0.264
E
5.40 5.80 0.213 0.228
e
HE
9.00 10.0 0 0.35 4 0.394
L
2.20 2.80 0.087 0.110
L1
0.80 1.40 0.031 0.055
L2
1.20 1.80 0.047 0.071
L3L4Lp
1.00 1.60 0.039 0.063
x
- 0.25 - 0.010
MIN MAX MIN MAX
b5
- 1.00 - 0.04
b6
- 5.20 - 0.205
l1
- 2.50 - 0.098
l2
- 5.50 - 0.217
l3
- 10.00 - 0.394
5.30
0.209
0.90
0.035
DIM
MILIMETERS
INCHES
5.00
0.197
0.75
0.030
2.30
0.091
DIM
MILIMETERS
INCHES
0.25
0.010
6/6
2013.07 - Rev.B
Page 7
Notes
1)
The information contained herein is subject to change without notice.
2)
Before you use our Products, please contact our sales representative and verify the latest specifica­tions :
3)
Although ROHM is continuously working to improve product reliability and quality, semicon­ductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM.
4)
Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production.
5)
The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information.
6)
The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communi­cation, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document.
7)
The Products specified in this document are not designed to be radiation tolerant.
8)
For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems.
9)
Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters.
10)
ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein.
11)
ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information.
12)
Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations.
13)
When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act.
14)
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