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TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1941
2SA1941
Power Amplifier Applications
• High breakdown voltage: V
• Complementary to 2SC5198
• Recommended for 70-W high-fidelity audio frequency amplifier
output stage.
Absolute Maximum Ratings
Characteristics Symbol Rating Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current I
Base current I
Collector power dissipation
(Tc = 25°C)
Junction temperature T
Storage temperature range T
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
= −140 V (min)
CEO
(Tc = 25°C)
CBO
CEO
EBO
C
B
P
C
j
stg
−140 V
−140 V
−5 V
−10 A
−1 A
100 W
150 °C
−55 to 150 °C
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-16C1A
Weight: 4.7 g (typ.)
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2SA1941
A
Electrical Characteristics
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current I
Emitter cut-off current I
Collector-emitter breakdown voltage V
DC current gain
Collector-emitter saturation voltage V
Base-emitter voltage VBE VCE = −5 V, IC = −5 A ― −1.0 −1.5 V
Transition frequency fT VCE = −5 V, IC = −1 A ― 30 ― MHz
Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz ― 320 ― pF
Note: h
classification R: 55 to 110, O: 80 to 160
FE (1)
(Tc = 25°C)
(BR) CEOIC
h
h
CE (sat) IC
VCB = −140 V, IE = 0 ― ― −5.0 μA
CBO
VEB = −5 V, IC = 0 ― ― −5.0 μA
EBO
= −50 mA, IB = 0 −140 ― ― V
FE (1)
FE (2)
V
= −5 V, IC = −1 A 55 ― 160
(Note)
CE
VCE = −5 V, IC = −5 A 35 83 ―
= −7 A, IB = −0.7 A ― −0.8 −2.0 V
Marking
TOSHIBA
A1941
Characteristics
indicator
Part No. (or abbreviation code)
Lot No.
line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
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2SA1941
−10
−8
(A)
C
−6
−4
Collector current I
−2
0
Collector-emitter voltage VCE (V)
−10
(V)
(sat)
CE
V
−0.1
−1
Collector-emitter saturation voltage
−0.01
−0.01
Tc = 25°C
−0.1 −1 −10
Collector current IC (A)
−50
−30
(A)
C
Collector current I
−10
−5
−3
−1
−0.5
−0.3
−0.1
−0.05
IC max (pulsed)*
IC max (continuous)
*: Single nonrepetitive
pulse Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
−2
−3
Safe Operating Area
DC operation
Tc = 25°C
−10 −30 −100 −300
Collector-emitter voltage VCE (V)
– VCE
I
C
−200 −250
Common emitter
Tc = 25 °C
−150
−100
IB = −10 mA
−4 −6 −8 −2 0 −10
CE (sat)
– IC
Tc = −25°C
Common emitter
IC/IB = 10
V
Tc = 100°C
1 ms*
10 ms*
100 ms*
V
max
CEO
−1000
−50
−20
−40
−30
−100
– VBE
I
−10
−8
(A)
C
−6
−4
Collector current I
−2
0
Tc = 100°C
−0.40
Base-emitter voltage VBE (V)
C
25°C
−25°C
Common emitter
VCE = −5 V
−0.8 −1.2 −1.6 −2.0
– IC
h
1000
Tc = 100°C
FE
DC current gain h
100
10
1
−0.01
Tc = 25°C
Tc = −25°C
Collector current IC (A)
FE
−0.1 −1
Common emitter
VCE = −5 V
−10
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2SA1941
RESTRICTIONS ON PRODUCT USE
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
20070701-EN
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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