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PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
2N6726
2N6727
ISSUE 1 MARCH 94
FEATURES
* 40 Volt V
CEO
* Gain of 50 at IC = 1 Amp
=1 Watt
*P
tot
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL 2N6726 2N6727 UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T
= 25°C P
amb
Operating and Storage Temperature Range T
CBO
CEO
EBO
CM
C
tot
j:Tstg
-40 -50 V
-30 -40 V
-5 V
-2 A
-1 A
1W
-55 to +200 °C
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL 2N6726 2N6727 UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward
Current Transfer Ratio
Transition
Frequency
Collector Base
Capacitance
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(on)
h
FE
f
T
C
CB
-40 -50 V IC=-1mA, IE=0
-30 -40 V IC=-10mA, IB=0*
-5 -5 V IE=-1mA, IC=0
-0.1
-0.1
-0.1 -0.1
µA
µA
µA
V
=-40V, IE=0
CB
=-50V, IE=0
V
CB
V
=-5V, IC=0
EB
-0.5 -0.5 V IC=-1A, IB=-100mA*
-1.2 -1.2 V IC=-1A, VCE=-1V*
55
60
50 250
55
60
50 250
I
=-10mA, VCE=-1V*
C
=-100mA, VCE=-1V*
I
C
=-1A, VCE=-1V*
I
C
50 500 50 500 MHz IC=-50mA, VCE=-10V
30 30 pF VCE=-10V, f=1MHz
3-8
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