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SILICON PNP POWER DARLINGTON TRANSISTOR
■ SGS-THOMS O N PREF ERRE D SA LES TYP E
■ PNP DARLING TO N
■ INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS:
■ GENERAL PURPOSE SWITCHING
■ GENER AL PURPO SE SWITCHING AND
AMPLIFIER
TO-220
2N6668
3
2
1
INTERNAL SCHEMATIC DIAGRAM
R1(typ) = 8 kΩ R2(typ) = 120 Ω
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
V
V
V
I
P
T
For PNP type voltage and current values are negative.
Collector-Base Voltage (IE = 0) 80 V
CBO
Collector-Emitter Voltage (IB = 0) 80 V
CEO
Emitter-Base Voltage (IC = 0) 5 V
EBO
Collector Current 10 A
I
C
Collector Peak Current 15 A
CM
Base Current 250 mA
I
B
Total Dissipation at Tc ≤ 25 oC65W
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
o
C
o
C
July 1997
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2N6668
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
1.92
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CEO
I
EBO
I
CEV
V
CEO(sus)
Collector Cut-off
Current (I
= 0)
B
Emitter Cut-off Current
(I
= 0)
C
Collector Cut-off
Current (V
= -1.5V)
EB
∗ Collector-Emitter
= 80 V 1 mA
V
CE
= 5 V 5 mA
V
EB
= 80 V 300 µA
V
CE
I
= 200 mA 80 V
C
Sustaining Voltage
(I
=0)
B
V
∗ Collector-Emitter
CE(sat)
Saturation Voltage
V
∗ Base-Emitter
BE(sat)
Saturation Voltage
hFE∗ DC Current Gain IC = 5 A VCE = 3 V
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP type voltage and current values are negative.
IC = 5 A IB = 0.01 A
I
= 10 A IB = 0.1 A
C
IC = 5 A IB = 0.01 A
I
= 10 A IB = 0.1 A
C
I
= 10 A VCE = 3 V
C
1000
100
2
3
2.8
4.5
20000
V
V
V
V
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P011C
TO-220 MECHANICAL DATA
2N6668
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
mm inch
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2N6668
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or ot h erwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifi cations mentioned
in this publication are subject to change without notice. This publication sup ersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SGS-THOMSON Microelectronics GROUP OF COMPANIES
. . .
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