Datasheet 2N6667, 2N6667G, 2N6668, 2N6668G Datasheet (ON Semiconductor)

2N6667, 2N6668

Darlington Silicon
Power Transistors

Designed for general-purpose amplifier and low speed switching

applications.

•High DC Current Gain -

hFE = 3500 (Typ) @ IC = 4.0 Adc

•Collector-Emitter Sustaining Voltage - @ 200 mAdc

V

CEO(sus)

•Low Collector-Emitter Saturation Voltage -

V

CE(sat)

•Monolithic Construction with Built-In Base-Emitter Shunt Resistors

•TO-220AB Compact Package

•Complementary to 2N6387, 2N6388

•Pb-Free Packages are Available*

= 60 Vdc (Min) - 2N6667
= 80 Vdc (Min) - 2N6668

= 2.0 Vdc (Max)@ IC = 5.0 Adc

http://onsemi.com

PNP SILICON

DARLINGTON

POWER TRANSISTORS

10 A, 60-80 V, 65 W

MARKING
DIAGRAM

4

COLLECTOR

BASE

≈ 8 k ≈ 120

Figure 1. Darlington Schematic

EMITTER

STYLE 1:

PIN 1. BASE

2. COLLECTOR

1

2

3

CASE 221A-09

ORDERING INFORMATION

Device Package Shipping

2N6667 TO-220AB 50 Units/Rail

2N6667G TO-220AB

2N6668 TO-220AB 50 Units/Rail

2N6668G TO-220AB

3. EMITTER

4. COLLECTOR

TO-220AB

x = 7 or 8
A = Assembly Location
Y = Year
WW = Work Week
G = Pb-Free Package

(Pb-Free)

(Pb-Free)

2N666x

AYWWG

50 Units/Rail

50 Units/Rail

*For additional information on our Pb-Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2007

November, 2007 - Rev. 6

1 Publication Order Number:

2N6667/D

2N6667, 2N6668

MAXIMUM RATINGS (Note 1)

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current - Continuous

- Peak

Base Current

Total Device Dissipation @ TC = 25_C

Derate above 25_C

Total Device Dissipation @ TA = 25_C

Derate above 25_C

Operating and Storage Junction Temperature Range

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Symbol

V

CEO

V

CB

V

EB

I

C

I

B

P

D

P

D

TJ, T

stg

2N6667

Symbol

R

q

JC

R

q

JA

60

60

5.0

250

0.52

2.0

0.016

–65 to +150

10
15

65

2N6668

80

80

Max

1.92

62.5

Unit

Vdc

Vdc

Vdc

Adc

mAdc

W

W/_C

W

W/_C

_C

Unit

_C/W

_C/W

ELECTRICAL CHARACTERISTICS (Note 1) (T

= 25_C unless otherwise noted)

C

Characteristic

OFF CHARACTERISTICS

Collector-Emitter Sustaining Voltage (Note 2) 2N6667

(IC = 200 mAdc, IB = 0) 2N6668

Collector Cutoff Current (VCE = 60 Vdc, IB = 0) 2N6667

(VCE = 80 Vdc, IB = 0) 2N6668

Collector Cutoff Current

(VCE = 60 Vdc, V
(VCE = 80 Vdc, V
(VCE = 60 Vdc, V
(VCE = 80 Vdc, V

= 1.5 Vdc) 2N6667

EB(off)

) = 1.5 Vdc) 2N6668

EB(off

) = 1.5 Vdc, TC = 125_C) 2N6667

EB(off

= 1.5 Vdc, TC = 125_C) 2N6668

EB(off)

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

ON CHARACTERISTICS (Note 1)

DC Current Gain (IC = 5.0 Adc, VCE = 3.0 Vdc)

(IC = 10 Adc, VCE = 3.0 Vdc)

Collector-Emitter Saturation Voltage (IC = 5.0 Adc, IB = 0.01 Adc)

(IC = 10 Adc, IB = 0.1 Adc)

Base-Emitter Saturation Voltage(IC = 5.0 Adc, IB = 0.01 Adc)

(IC = 10 Adc, IB = 0.1 Adc)

DYNAMIC CHARACTERISTICS

Current Gain - Bandwidth Product (IC = 1.0 Adc, VCE = 5.0 Vdc, f

= 1.0 MHz)

test

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Small-Signal Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc, f = 1.0 kHz)

1. Indicates JEDEC Registered Data.

2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

Symbol

V

CEO(sus)

I

CEO

I

CEX

I

EBO

h

FE

V

CE(sat)

V

BE(sat)

|hfe|

C

ob

h

fe

Min

60
80

-

-

-

-

-

-

-

1000

100

-

-

-

-

20

-

1000

Max

-

-

1.0

1.0

300
300

3.0

3.0

5.0

20000

-

2.0

3.0

2.8

4.5

-

200

-

Unit

Vdc

mAdc

mAdc

mAdc

mAdc

-

Vdc

Vdc

-

pF

-

http://onsemi.com

2

2N6667, 2N6668

V

CC

- 30 V

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1, MUST BE FAST RECOVERY TYPES e.g.,

1N5825 USED ABOVE IB [ 100 mA
MSD6100 USED BELOW IB [ 100 mA

FOR td AND tr, D1 IS DISCONNECTED AND V2 = 0

tr, tf v 10 ns
DUTY CYCLE = 1.0%

Figure 2. Switching Times Test Circuit

TAT

C

80

4

60

3

T

C

40

2

T

A

T, TEMPERATURE (°C)

, POWER DISSIPATION (WATTS)

D

P

20

1

0

20 40 80 100 120 160

0 60 140

V

2

APPROX

+ 8 V

V

1

APPROX

- 12 V

R

C

TUT

R

B

D

51

0

1

[ 8 k [ 120

SCOPE

+ 4.0 V

25 μs

10

7
5

3

2

t

r

t

1

0.7

t, TIME (s)μ

0.5

0.3

0.2

t

f

VCC = 30 V
IC/IB = 250
IB1 = I

B2

TJ = 25°C

s

.t

d

0.1

0.1

0.2 10

0.5 2

0.3 0.7 3 7

15

IC, COLLECTOR CURRENT (AMPS)

1

D = 0.5

0.5

0.3

0.2

0.1

0.05

0.03

r(t) NORMALIZED EFFECTIVE

0.02

TRANSIENT THERMAL RESISTANCE

0.2

0.1

0.05

0.02

0.01

0.01

0.01

0.02

Figure 3. Power Derating

SINGLE PULSE

P

(pk)

DUTY CYCLE, D = t1/t

Figure 4. Typical Switching Times

Z

(t) = r(t) R

θ

JC

R

θ

JC

D CURVES APPLY FOR POWER

t

1

t

2

PULSE TRAIN SHOWN
READ TIME AT t
T

J(pk)

2

θ

= 1.92°C/W MAX

- TC = P

(pk)

JC

1

R

(t)

θ

JC

0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 1000500
t, TIME (ms)

Figure 5. Thermal Response

http://onsemi.com

3

20

10

5
3
2

1

0.5

0.3

0.2

0.1

, COLLECTOR CURRENT (AMPS)

C

I

0.05

0.03

0.02
1

5 ms

dc

TJ = 150°C

2N6667
BONDING WIRE LIMIT
THERMAL LIMIT @ TC = 25°C
SECOND BREAKDOWN LIMIT

CURVES APPLY BELOW RATED V

10 20 100

27037

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

530

2N6668

100 μs

1 ms

CEO

50

Figure 6. Maximum Safe Operating Area

2N6667, 2N6668

There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.

The data of Figure 6 is based on T
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
< 150_C. T
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.

= 150_C; TC is

J(pk)

may be calculated from the data in Figure 5.

J(pk)

- V

C

CE

J(pk)

10,000

5000

2000

1000

500

200

100

, SMALL-SIGNAL CURENT GAIN

FE

h

20,000

10,000

7000
5000

3000
2000

1000

, DC CURRENT GAIN

FE

700

h

500

300
200

TC = 25°C
VCE = 4 VOLTS
IC = 3 AMPS

50

20

10

2 5 10 20 50 100 200 1000

1

37 7030 300

f, FREQUENCY (kHz)

Figure 7. Typical Small-Signal Current Gain

TJ = 150°C

TJ = 25°C

TJ = - 55°C

0.1

0.2 0.3 0.5 0.7 1 2 10

IC, COLLECTOR CURRENT (AMPS)

Figure 9. Typical DC Current Gain

500

VCE = 3 V

35

300

TJ = 25°C

200

C

ob

500.2 0.5

100

70

C, CAPACITANCE (pF)

50

30

0.1

C

ib

1 2 5 20 10010

VR, REVERSE VOLTAGE (VOLTS)

Figure 8. Typical Capacitance

2.6

TJ = 25°C

2.2
IC = 2 A

1.8

1.4

1

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

CE

0.6

7

V

0.3 0.5 1 2 3 5 7 30

0.7 2010

4 A 6 A

IB, BASE CURRENT (mA)

Figure 10. Typical Collector Saturation Region

http://onsemi.com

4

2N6667, 2N6668

3

TJ = 25°C

2.5

2

V

@ IC/IB = 250

V, VOLTAGE (VOLTS)

1.5

0.5

BE(sat)

1

VBE @ VCE = 3 V

V

CE(sat)

@ IC/IB = 250

0.1 0.2 0.3 0.5 0.7 1 2 10735
IC, COLLECTOR CURRENT (AMPS)

Figure 11. Typical “On” Voltages

5

10

REVERSE

4

10

3

10

10

10

10

, COLLECTOR CURRENT (A)μI

C

10

VCE = 30 V

2

TJ = 150°C

1

0

-1

+0.6

+5

+4

*IC/IB ≤

+3

+2

+1

0

-1

∗θVC for V

-2

-3

θVB for V

-4

, TEMPERATURE COEFFICIENTS (mV/ C)°θ

V

-5

0.1 0.2 0.3 0.5 0.7 1 2 10735

Figure 12. Typical Temperature Coefficients

FORWARD

100°C

25°C

+0.2+0.4 0 -0.2 -0.4 -0.6 -0.8 -1.2 -1.4-1

VBE, BASE-EMITTER VOLTAGE (VOLTS)

h

@V

CE

+3.0V

FE

3

-55°C to 25°C

CE(sat)

25°C to 150°C

BE

IC, COLLECTOR CURRENT (AMP)

25°C to 150°C

-55°C to 25°C

Figure 13. Typical Collector Cut-Off Region

http://onsemi.com

5

2N6667, 2N6668

PACKAGE DIMENSIONS

TO-220

CASE 221A-09

ISSUE AE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

SEATING

-T-

PLANE

B

4

Q

123

F

T

A

U

C

S

H

K

Z

L

V

R

J

G

D

N

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.

DIM MIN MAX MIN MAX

A 0.570 0.620 14.48 15.75
B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
D 0.025 0.035 0.64 0.88

F 0.142 0.161 3.61 4.09
G 0.095 0.105 2.42 2.66
H 0.110 0.155 2.80 3.93

J 0.014 0.025 0.36 0.64
K 0.500 0.562 12.70 14.27

L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79

S 0.045 0.055 1.15 1.39

T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27

V 0.045 --- 1.15 ---

Z --- 0.080 --- 2.04

MILLIMETERSINCHES

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

Literature Distribution Center for ON Semiconductor
 P.O. Box 61312, Phoenix, Arizona 85082-1312 USA
 Phone: [phone] or 800-344-3860 Toll Free USA/Canada
 Fax: [phone] or 800-344-3867 Toll Free USA/Canada
 Email: [e-mail]

N. American Technical Support: 800-282-9855 Toll Free
USA/Canada

Japan: ON Semiconductor, Japan Customer Focus Center
 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051
 Phone: [phone]

http://onsemi.com

ON Semiconductor Website: http://onsemi.com

Order Literature: http://www.onsemi.com/litorder

For additional information, please contact your
local Sales Representative.

2N6667/D

6