Datasheet 2N6437, 2N6438 Datasheet (ON Semiconductor)

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查询2N6437供应商

ON Semiconductor

High-Power PNP Silicon
Transistors

. . . designed for use in industrial–military power amplifier and

switching circuit applications.

• High Collector–Emitter Sustaining Voltage —

V

CEO(sus)

• High DC Current Gain —

hFE = 20–80 @IC = 10 Adc

• Low Collector–Emitter Saturation Voltage —

V

CE(sat)

• Fast Switching Times @ I

tr = 0.3 µs (Max)
ts = 1.0 µs (Max)
tf = 0.25 µs (Max)

• Complement to NPN 2N6339 thru 2N6341

MAXIMUM RATINGS (1)

Collector–Base Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
Collector Current — Continuous

ОООООООООО

Base Current
Total Device Dissipation @ TC = 25C

Derate above 25C

Operating and Storage Junction

ОООООООООО

Temperature Range

THERMAL CHARACTERISTICS

Thermal Resistance, Junction to Case

(1) Indicates JEDEC Registered Data.

= 100 Vdc (Min) — 2N6437

= 120 Vdc (Min) — 2N6438

= 12 (Min) @ IC = 25 Adc

= 1.0 Vdc (Max) @ IC = 10 Adc

= 10 Adc

C

Rating

Peak

Characteristic

Symbol

V

CB

V

CEO

V

EB

I

C

ÎÎ

I

B

P

D

TJ,T

ÎÎ

Symbol

R

2N6437

120
100

ООООО

stg

θ

JC

–65 to +200

ООООО

6.0
25

50
10

200

1.14

2N6438

Max

0.875

140
120

Unit

Vdc
Vdc
Vdc
Adc

Î

Adc

Watts
W/C

C

Î

Unit

C/W

2N6437
2N6438

*ON Semiconductor Preferred Device

25 AMPERE

POWER TRANSISTORS

PNP SILICON

100, 120 VOL TS

200 WATTS

CASE 1–07

TO–204AA

(TO–3)

*

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

 Semiconductor Components Industries, LLC, 2001

1 Publication Order Number:

April, 2001 – Rev. 2

2N6437/D

2N6437 2N6438

200

175

150

125

100

75

50

, POWER DISSIPATION (WATTS)

D

P

25

0

0 25 50 75 100 125 150 175 200

T

, CASE TEMPERATURE (°C)

C

Figure 1. Power Derating

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2

2N6437 2N6438

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*ELECTRICAL CHARACTERISTICS (T

= 25C unless otherwise noted)

C

Characteristic

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (1)

= 50 mAdc, IB = 0) 2N6437

(I

C

ОООООООООООООООООООО

2N6438

Collector Cutoff Current

(V

= 50 Vdc, IB = 0) 2N6437

CE

ОООООООООООООООООООО

= 60 Vdc, IB = 0) 2N6438

(V

CE

Collector Cutoff Current

(V

ОООООООООООООООООООО

ОООООООООООООООООООО

ОООООООООООООООООООО

= 130 Vdc, V

(V

CE

(V

= 100 Vdc, V

CE

(V

= 120 Vdc, V

CE

= 110 Vdc, V

CE

= –1.5 Vdc) 2N6437

BE(off)

= –1.5 Vdc) 2N6438

BE(off)

= –1.5 Vdc, TC = 150C) 2N6437

BE(off)

= –1.5 Vdc, TC = 150C) 2N6438

BE(off)

Collector Cutoff Current

(V

= 120 Vdc, IE = 0) 2N6437

CB

ОООООООООООООООООООО

= 140 Vdc, IE = 0) 2N6438

(V

CB

Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0)

ON CHARACTERISTICS

DC Current Gain (1)

(I

= 0.5 Adc, VCE = 2.0 Vdc)

C

ОООООООООООООООООООО

= 10 Adc, VCE = 2.0 Vdc)

(I

C

(I

= 25 Adc, VCE = 2.0 Vdc)

C

ОООООООООООООООООООО

Collector–Emitter Saturation Voltage (1)

(I

= 10 Adc, IB = 1.0 Adc)

C

ОООООООООООООООООООО

= 25 Adc, IB = 2.5 Adc)

(I

C

Base–Emitter Saturation Voltage (1)

= 10 Adc, IB = 1.0 Adc)

(I

C

ОООООООООООООООООООО

(I

= 25 Adc, IB = 2.5 Adc)

C

DYNAMIC CHARACTERISTICS

Current–Gain — Bandwidth Product (IC = 1.0 Adc, VCE = 10 Vdc, f

= 10 MHz)

test

Output Capacitance (VCE = 10 Vdc, IE = 0, f = 100 kHz)

SWITCHING CHARACTERISTICS

Rise Time (VCC = 80 Vdc, IC = 10 A, V
Storage (VCC = 80 Vdc, IC = 10 A, V
Fall Time (VCC = 80 Vdc, IC = 10 A,V

= 6.0 Vdc, IB1 = 1.0 Adc)

BE(off)

= 6.0 Vdc, IB1 = IB2 = 1.0 Adc)

BE(off)

= 6.0 Vdc, IB1 = IB2 = 1.0 Adc)

BE(off)

*Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width  300 µs; Duty Cycle  2.0%.

Symbol

V

CEO(sus)

ÎÎÎ

I

CEO

ÎÎÎ

I

CEX

ÎÎÎ

ÎÎÎ

ÎÎÎ

I

CBO

ÎÎÎ

I

EBO

h

FE

ÎÎÎ

ÎÎÎ

V

CE(sat)

ÎÎÎ

V

BE(sat)

ÎÎÎ

f

T

C

ob

t

r

t

s

t

f

Min

100
120

Î

—

Î

—

—

Î

—

Î

—
—

Î

—

Î

—
—

30

Î

20
12

Î

—

Î

—

—

Î

—

40
—

—
—
—

Max

—
—

ÎÎ

50

ÎÎ

50

10

ÎÎ

10

ÎÎ

1.0

1.0

ÎÎ

10

ÎÎ

10

100

—

ÎÎ

120

—

ÎÎ

1.0

ÎÎ

1.8

1.8

ÎÎ

2.5

—

700

0.3

1.0

0.25

Unit

Vdc

Î

µAdc

Î

µAdc

Î

Î

mAdc

Î

µAdc

Î

µAdc

—

Î

Î

Vdc

Î

Vdc

Î

MHz

pF

µs
µs
µs

+ 9.0 V

0

- 11 V
10

µs

, tf  10 ns

t

r

DUTY CYCLE = 1.0%

NOTE: For information on Figures 3 and 6, R

varied to obtain desired test conditions.

Figure 2. Switching Time Test Circuit

RB =

10 OHMS

MBR74

5

- 5.0 V

V

CC

+ 80 V

R

8.0 OHMS

and RC were

B

C

SCOPE

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3

0.3

0.2

1.0

td @ V

BE(off)

= 6.0 V

VCC = 80 V
I

= 10

C/IB

= 25°C

T

J

0.7

0.5

0.3

0.2

t, TIME (s)µ

t

r

0.1

0.07

0.05

0.03

0.3

0.5

0.7 2.0 3.0 7.0

1.0 10

5.0 20

30

IC, COLLECTOR CURRENT (AMP)

Figure 3. Turn–On Time

1.0

0.7
D = 0.5

0.5

0.3

0.2

0.2

0.1

0.1

0.05

0.07

0.05

r(t) EFFECTIVE TRANSIENT

0.03

0.02

THERMAL RESISTANCE (NORMALIZED)

0.01

0.02

0.01

0.02 0.03

2N6437 2N6438

P

(pk)

t

1

t

0.01

SINGLE

PULSE

0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1000500

0.3 3.0 30 300
t, TIME OR PULSE WIDTH (ms)

2

DUTY CYCLE, D = t1/t

Figure 4. Thermal Response

Z

(t) = r(t)R

θ

JC

R

θ

JC

D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T

J(pk)

2

θ

JC

= 0.875°C/W MAX

(pk)

1

Z

θ

- TC = P

(t)

JC

100

50

dc

5.0 ms

1.0 ms

2N6437
2N6438

50 100

20
10

5.0

2.0

1.0

0.5

0.2

0.1

, COLLECTOR CURRENT (AMP)

0.05

C

I

0.02

0.01

T

= 200°C

J

BONDING WIRE LIMITED
THERMALLY LIMITED

= 25°C(SINGLE PULSE)

T

C

PULSE DUTY CYCLE  10%
SECOND BREAKDOWN LIM
ITED

CURVES APPLY
BELOW RATED V

2.0

3.0 5.0 307.0

VCE, COLLECTOREMITTER VOLTAGE (VOLTS)

CEO

10 20 70 200

Figure 5. Active Region Safe Operating Area

3.0

2.0

t

s

t

f

3.0

IC, COLLECTOR CURRENT (AMP)

7.0 20

t, TIME (s)µ

1.0

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.3

0.5

0.7 1.0 2.0 5.0 10 30

200 µs

VCC = 80 V
I

= I

B1

IC/IB = 10
T

= 25°C

J

There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I

– V

C

CE

limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.

The data of Figure 5 is based on T

= 200C; TC is

J(pk)

variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T

 200C. T

may be calculated from the data in

J(pk)

J(pk)

Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.

4000
3000

T

B2

2000

1000

700

500

CAPACITANCE (pF)

300

200

0.1

0.5 1.0 2.0 5.0 20 50 10010

0.2
VR, REVERSE VOLTAGE (VOLTS)

C

ib

C

ob

= 25°C

J

Figure 6. Turn-Off Time

Figure 7. Capacitance

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2N6437 2N6438

200

100

, DC CURRENT GAIN

FE

h

V, VOLTAGE (VOLTS)

T

70

50

30

20

10

0.3

2.0

T

= 25°C

J

1.8

1.6

1.4

1.2

1.0
V

BE(sat)

0.8

0.6

VBE @ VCE = 2.0 V

0.4

V

CE(sat)

0.2

0

0.3

2.0

= 150°C

J

+ 25°C

1.8

1.6

1.4

IC = 2.0 A

5.0 A 10 A

1.2

-55°C

1.0

0.8

0.6

VCE = 2.0 V
V

= 4.0 V

CE

0.7 1.0 2.0 3.0 5.0 10 20

0.5 0.070.03 0.70.5

7.0 30

IC, COLLECTOR CURRENT (AMP)

Figure 8. DC Current Gain

0.4

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

0.2

CE

V

0

0.02 0.05 0.1 0.2 0.3 1.0 2.0

IB, BASE CURRENT (AMP)

Figure 9. Collector Saturation Region

+2.5

h

@V

 2.0V

CE

2

-55°C to +25°C

@ IC/IB = 10

@ IC/IB = 10

0.5

0.7 1.0 2.0 3.0 5.0 10 207.0 30

IC, COLLECTOR CURRENT (AMP)

Figure 10. “On” Voltages

, TEMPERATURE COEFFICIENTS (mV/ C)°
V

θ

+2.0

*APPLIES FOR IC/IB 

+1.5

+1.0

+0.5

*θ

VC

0

-0.5

-1.0

θ

-1.5

-2.0

-2.5

0.3 0.7 1.0 2.0 3.0 5.0 10 207.0 300.5

FE

+25°C to +150°C

FOR V

CE(sat)

+25°C to +150°C

FOR V

VB

BE

-55°C to + 25°C

IC, COLLECTOR CURRENT (AMP)

Figure 11. Temperature Coefficients

T

= 25°C

J

20 A

2

10

1

10

T

= +150°C

J

+100°C

0

10

-1

10

VCE = 40 V

+25°C

, COLLECTOR CURRENT (A)µI

C

REVERSE FORWARD

-2

10

1

10

T

= +150°C

0

10

-1

10

-2

10

, BASE CURRENT (A)µI

B

-3

10

J

+100°C

+25°C

VCE = 40 V

REVERSE FORWARD

-3

10

V

, BASEEMITTER VOLTAGE (VOLTS)

BE

-0.2-0.10+0.1+0.2 -0.3 -0.4 -0.5

Figure 12. Collector Cut-Off Region

-4

10

0+0.08+0.16 -0.08 -0.16 -0.24

VBE, BASEEMITTER VOLTAGE (VOLTS)

Figure 13. Base Cutoff Region

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2N6437 2N6438

PACKAGE DIMENSIONS

CASE 1–07

TO–204AA (TO–3)

ISSUE Z

A

N

C

E

D

2 PL

0.13 (0.005) Y

U

V

H

L

2

1

G

–T–

K

M

–Y–

B

T

SEATING
PLANE

M

Q

M

–Q–

0.13 (0.005) T

M

M

Y

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.

DIM MIN MAX MIN MAX

A 1.550 REF 39.37 REF
B --- 1.050 --- 26.67
C 0.250 0.335 6.35 8.51
D 0.038 0.043 0.97 1.09
E 0.055 0.070 1.40 1.77

G 0.430 BSC 10.92 BSC

H 0.215 BSC 5.46 BSC
K 0.440 0.480 11.18 12.19
L 0.665 BSC 16.89 BSC
N --- 0.830 --- 21.08

Q 0.151 0.165 3.84 4.19

U 1.187 BSC 30.15 BSC
V 0.131 0.188 3.33 4.77

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

MILLIMETERSINCHES

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Notes

2N6437 2N6438

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2N6437 2N6438

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2N6437/D

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