Datasheet 2N6338, 2N6341 Datasheet (ON Semiconductor)

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Page 1

ООООО

ON Semiconductort

High−Power NPN Silicon Transistors

. . . designed for use in industrial−military power amplifier and

switching circuit applications.

• High Collector−Emitter Sustaining Voltage −

CEO(sus)

• High DC Current Gain −

• Low Collector−Emitter Saturation Voltage −

CE(sat)

• Fast Switching Times @ I

= 0.3 ms (Max)

= 1.0 ms (Max)

= 0.25 ms (Max)

w These devices are available in Pb−free package(s). Specifications herein

apply to both standard and Pb−free devices. Please see our website at www.onsemi.com for specific Pb−free orderable part numbers, or contact your local ON Semiconductor sales office or representative.

*MAXIMUM RATINGS

Rating

Collector−Base Voltage

Collector−Emitter Voltage

Emitter−Base Voltage

Collector Current

Continuous

ООООООО

Peak

Base Current

Total Device Dissipation

= 25_C

@ T

ООООООО

Derate above 25_C

Operating and Storage Junction

Temperature Range

THERMAL CHARACTERISTICS

Thermal Resistance, Junction to Case

*Indicates JEDEC Registered Data.

= 100 Vdc (Min) − 2N6338

= 150 Vdc (Min) − 2N6341

= 30 − 120 @ IC = 10 Adc

= 12 (Min) @ I

= 25 Adc

= 1.0 Vdc (Max) @ IC = 10 Adc

= 10 Adc

Symbol

CEO

ÎÎ

TJ, T

stg

Characteristic

2N6338

120

100

2N6341

180

150

6.0

ОООООООО

25 50

ОООООООО

200

1.14

–65 to +200

Symbol

Max

0.875

Unit

Vdc

Adc

Watts

W/°C

Unit

_C/W

2N6338 2N6341

*ON Semiconductor Preferred Device

25 AMPERE

POWER TRANSISTORS

NPN SILICON

100, 120, 140, 150 VOLTS

200 WATTS

CASE 1−07

TO−204AA

(TO−3)

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

March, 2006 − Rev. 11

1 Publication Order Number:

2N6338/D

Page 2

2N6338 2N6341

200

175

150

125

100

, POWER DISSIPATION (WATTS)

0 25 50 75 100 125 150 175 200

TC, CASE TEMPERATURE (°C)

Figure 1. Power Derating

*ELECTRICAL CHARACTERISTICS (T

= 25_C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (1) 2N6338

= 50 mAdc, IB = 0) 2N6341

ОООООООООООООООООООО

Collector Cutoff Current

= 50 Vdc, IB = 0) 2N6338

ОООООООООООООООООООО

= 75 Vdc, IB = 0) 2N6341

Collector Cutoff Current

= Rated V

ОООООООООООООООООООО

= Rated V

CEO CEO

, V

= 1.5 Vdc)

EB(off)

, V

= 1.5 Vdc, TC = 150_C)

EB(off)

Collector Cutoff Current (VCB = Rated VCB, IE = 0)

Emitter Cutoff Current (VBE = 6.0 Vdc, IC = 0)

ON CHARACTERISTICS (1)

DC Current Gain)

= 0.5 Adc, VCE = 2.0 Vdc)

ОООООООООООООООООООО

= 10 Adc, VCE = 2.0 Vdc)

= 25 Adc, VCE = 2.0 Vdc)

ОООООООООООООООООООО

Collector Emitter Saturation Voltage

= 10 Adc, IB = 1.0 Adc)

ОООООООООООООООООООО

= 25 Adc, IB = 2.5 Adc)

Base−Emitter Saturation Voltage

ОООООООООООООООООООО

= 10 Adc, IB = 1.0 Adc)

= 25 Adc, IB = 2.5 Adc)

ОООООООООООООООООООО

Base−Emitter On Voltage (IC = 10 Adc, VCE = 2.0 Vdc)

DYNAMIC CHARACTERISTICS

Current−Gain − Bandwidth Product (2) (IC = 1.0 Adc, VCE = 10 Vdc, f

= 10 MHz)

test

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

SWITCHING CHARACTERISTICS

Rise Time (VCC ≈ 80 Vdc, IC = 10Adc, IB1 = 1.0 Adc, V

BE(off)

= 6.0 Vdc)

Storage Time (VCC ≈ 80 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc)

Fall Time (VCC ≈ 80 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc) *Indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2.0%. (2) f

= |hfe| • f

test

Symbol

CEO(sus)

ÎÎÎ

CEO

ÎÎÎ

CEX

ÎÎÎ

CBO

EBO

ÎÎÎ

CE(sat)

ÎÎÎ

BE(sat)

ÎÎÎ

BE(on)

Min

100 150

−

Max

−

ÎÎ

1.0

100

−

ÎÎ

120

ÎÎ

−

1.0

ÎÎ

1.8

ÎÎ

1.8

2.5

ÎÎ

1.8

−

300

0.3

1.0

0.25

Unit

Vdc

μAdc

mAdc

μAdc

−

Vdc

MHz

μs

http://onsemi.com

Page 3

2N6338 2N6341

10 μs

+ 11 V

− 9.0 V

, tf v 10 ns

DUTY CYCLE = 1.0%

NOTE: For information on Figures 3 and 6, R

varied to obtain desired test conditions.

10 OHMS

1N4933

− 5.0 V

Figure 2. Switching Time Test Circuit

1.0

0.7 D = 0.5

0.5

0.3

0.2

0.1

0.01

0.05

0.02

SINGLE PULSE

0.02 0.03

0.01

0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1000500

0.07

0.05

0.03

r(t), EFFECTIVE TRANSIENT

0.02

THERMAL RESISTANCE (NORMALIZED)

0.01

+ 80 V

8.0 OHMS

and RC were

SCOPE

1000

t, TIME (ns)

700

500

300

200

100

td @ V

70 50

0.3

0.5 0.7 2.0 3.0 7.0 30

1.0 10 IC, COLLECTOR CURRENT (AMP)

BE(off)

= 6.0 V

5.0 20

Figure 3. Turn−On Time

(pk)

DUTY CYCLE, D = t1/t

0.3 3.0 30 300 t, TIME (ms)

θJC = r(t) θ θJC = 0.875°C/W MAX

D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t T

J(pk)

− TC = P

(pk) θJC

Figure 4. Thermal Response

VCC = 80 V I

= 10

C/IB

= 25°C

(t)

100

20 10

5.0

2.0

1.0

0.5

0.2

0.1

, COLLECTOR CURRENT (AMP)

0.05

0.02

0.01

1.0 ms

5.0 ms

2N6338 2N6341

50 100

2.0

3.0 5.0 307.0

TJ = 200°C

BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED V

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

CEO

10 20 70 200

Figure 5. Active Region Safe Operating Area

200 μs

http://onsemi.com

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I

C−VCE

limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 5 is based on T

= 200_C; TC is

J(pk)

variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T v 200_C. T

may be calculated from the data in

J(pk)

Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.

Page 4

2N6338 2N6341

t, TIME (s)μ

5.0

3.0

2.0

1.0

0.7

0.5

0.3

0.2

0.1

0.07

0.05

VCC = 80 V I

IC/IB = 10 T

0.3

0.5 0.7 1.0 2.0 5.0 10 20 30

3.0

IC, COLLECTOR CURRENT (AMP)

Figure 6. Turn−Off Time

= I

= 25°C

5000

3000

2000

1000

700 500

300 200

C, CAPACITANCE (pF)

100

70 50

0.1

0.2

0.5 1.0 2.0 5.0 20 50 10010 VR, REVERSE VOLTAGE (VOLTS)

Figure 7. Capacitance

TJ = 25°C

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Page 5

2N6338 2N6341

PACKAGE DIMENSIONS

CASE 1−07

TO−204AA (TO−3)

ISSUE Z

2 PLD

0.13 (0.005) Y

−T−

−Y−

SEATING PLANE

−Q−

0.13 (0.005) T

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO−204AA OUTLINE SHALL APPLY.

DIM MIN MAX MIN MAX

A 1.550 REF 39.37 REF B −−− 1.050 −−− 26.67 C 0.250 0.335 6.35 8.51 D 0.038 0.043 0.97 1.09 E 0.055 0.070 1.40 1.77 G 0.430 BSC 10.92 BSC H 0.215 BSC 5.46 BSC K 0.440 0.480 11.18 12.19 L 0.665 BSC 16.89 BSC N −−− 0.830 −−− 21.08 Q 0.151 0.165 3.84 4.19 U 1.187 BSC 30.15 BSC V 0.131 0.188 3.33 4.77

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

MILLIMETERSINCHES

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2N6338/D