Datasheet 2N6426, 2N6427 Datasheet (ON Semiconductor)

2N6426, 2N6427

2N6426 is a Preferred Device

Darlington Transistors

NPN Silicon

Features

• These are Pb−Free Devices*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector − Emitter Voltage V
Collector − Base Voltage V
Emitter − Base Voltage V
Collector Current − Continuous I
Total Device Dissipation @ TA = 25°C

Derate above 25°C
Total Device Dissipation @ TC = 25°C

Derate above 25°C
Operating and Storage Junction

Temperature Range

CEO
CBO
EBO

P

P

TJ, T

C

D

D

stg

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

R

q

JA

R

q

JC

40 Vdc
40 Vdc

12 Vdc
500 mAdc
625

5.0

1.5
12

−55 to +150 °C

200 °C/W

83.3 °C/W

mW

mW/°C

W

mW/°C

TO−92
CASE 29
STYLE 1

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COLLECTOR 3

BASE

2

EMITTER 1

1

2

3

STRAIGHT LEAD

BULK PACK

MARKING DIAGRAM

1

2

3

BENT LEAD

TAPE & REEL

AMMO PACK

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2007

March, 2007 − Rev. 3

1 Publication Order Number:

2N

642x

AYWWG

G

x = 6 or 7
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.

Preferred devices are recommended choices for future use
and best overall value.

2N6426/D

2N6426, 2N6427

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

A

Characteristic

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage, (Note 1)

(I

= 10 mAdc, VBE = 0)

C

Collector−Base Breakdown Voltage

(IC = 100 mAdc, IE = 0)

Emitter−Base Breakdown Voltage

= 10 mAdc, IC = 0)

(I

E

Collector Cutoff Current

(V

= 25 Vdc, IB = 0)

CE

Collector Cutoff Current

(VCB= 30 Vdc, IE = 0)

Emitter Cutoff Current

(V

= 10 Vdc, IC = 0)

EB

ON CHARACTERISTICS

DC Current Gain, (Note 1)

(I

= 10 mAdc, VCE = 5.0 Vdc) 2N6426

C

(IC = 100 mAdc, VCE = 5.0 Vdc) 2N6426

(IC = 500 mAdc, VCE = 5.0 Vdc) 2N6426

Collector−Emitter Saturation Voltage

(I

= 50 mAdc, IB = 0.5 mAdc)

C

(IC = 500 mAdc, IB = 0.5 mAdc

Base−Emitter Saturation Voltage

(I

= 500 mAdc, IB = 0.5 mAdc)

C

Base−Emitter On Voltage

(I

= 50 mAdc, VCE = 5.0 Vdc)

C

SMALL−SIGNAL CHARACTERISTICS

Output Capacitance

(V

= 10 Vdc, IE = 0, f = 1.0 MHz)

CB

Input Capacitance

(V

= 1.0 Vdc, IC = 0, f = 1.0 MHz)

EB

Input Impedance

(I

= 10 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) 2N6426

C

Small−Signal Current Gain

(I

= 10 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) 2N6426

C

Current−Gain − High Frequency

(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 2N6426

Output Admittance

(I

= 10 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)

C

Noise Figure

= 1.0 mAdc, VCE = 5.0 Vdc, RS = 100 kW, f = 1.0 kHz)

(I

C

1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.

2N6427

2N6427

2N6427

2N6427

2N6427

2N6427

Symbol Min Typ Max Unit

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

CES

I

CBO

I

EBO

h

V

CE(sat)

V

BE(sat)

V

BE(on)

C

obo

C

h

FE

ibo

ie

40 − − Vdc

40 − − Vdc

12 − − Vdc

− − 1.0

− − 50 nAdc

− − 50 nAdc

20,000
10,000

30,000
20,000

20,000
14,000

−

−

−

−

−

−

−

−

0.71

0.9

200,000
100,000

300,000
200,000

200,000
140,000

1.2

1.5

− 1.52 2.0 Vdc

− 1.24 1.75 Vdc

− 5.4 7.0 pF

− 10 15 pF

100

50

−

−

2000
1000

mAdc

Vdc

kW

hfe

20,000
10,000

−

−

−

−

|hfe|

1.5

1.3

h

oe

− − 1000

2.4

2.4

−

−
mmhos

NF − 3.0 10 dB

−

−

−

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2

2N6426, 2N6427

R

S

NOISE CHARACTERISTICS

i

n

e

n

IDEAL

TRANSISTOR

Figure 1. Transistor Noise Model

(VCE = 5.0 Vdc, TA = 25°C)

500

200

100

50

, NOISE VOLTAGE (nV)

20

n

e

5.0
101020 50 100 200 500 1k 2k 5k 10k 20k 50k 100k

BANDWIDTH = 1.0 Hz
R

≈ 0

S

IC = 1.0 mA

f, FREQUENCY (Hz)

10 mA

100 mA

Figure 2. Noise Voltage

200

BANDWIDTH = 10 Hz TO 15.7 kHz

100

70

IC = 10 mA

50

30

20

, TOTAL WIDEBAND NOISE VOLTAGE (nV)

T

V

10

100 mA

1.0 mA

1.0

2.0 5.0 10 20 50 100 200 500 1000
RS, SOURCE RESISTANCE (kW)

2.0

1.0

0.7

0.5

0.3

0.2

0.1

, NOISE CURRENT (pA)

n

0.07

i

0.05

0.03

0.02
10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k

BANDWIDTH = 1.0 Hz

IC = 1.0 mA

100 mA

10 mA

f, FREQUENCY (Hz)

Figure 3. Noise Current

14

12

10

8.0

6.0

4.0

NF, NOISE FIGURE (dB)

IC = 1.0 mA

2.0

0

1.0 2.0 5.0 10 20 50 100 200 500 1000

RS, SOURCE RESISTANCE (kW)

BANDWIDTH = 10 Hz TO 15.7 kHz

10 mA

100 mA

Figure 4. Total Wideband Noise Voltage

Figure 5. Wideband Noise Figure

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3

2N6426, 2N6427

SMALL−SIGNALCHARACTERISTICS

20

10

7.0

5.0

C, CAPACITANCE (pF)

3.0

2.0

0.04

200k

100k

70k
50k

30k
20k

10k

, DC CURRENT GAIN

FE

7.0k

h

5.0k

3.0k

2.0k

5.0

TJ = 25°C

C

ibo

0.1 0.2 0.4 1.0 2.0 4.0 10 20 40
VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Capacitance

TJ = 125°C

25°C

−55°C

7.0 10 20 30 50 70 100 200 300
IC, COLLECTOR CURRENT (mA)

VCE = 5.0 V

4.0
VCE = 5.0 V

f = 100 MHz
TJ = 25°C

2.0

1.0

C

obo

0.8

0.6

0.4

|, SMALL−SIGNAL CURRENT GAIN

fe

|h

0.2

0.5 1.0 2.0 0.5 10 20 50 100 200 500
IC, COLLECTOR CURRENT (mA)

Figure 7. High Frequency Current Gain

3.0
TJ = 25°C

2.5

500

IC =

2.0

1.5

1.0

, COLLECTOR−EMITTER VOLTAGE (VOLTS)

CE

V

0.5

0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000

50 mA 250 mA 500 mA

10 mA

IB, BASE CURRENT (mA)

V, VOLTAGE (VOLTS)

Figure 8. DC Current Gain

1.6

TJ = 25°C

1.4

V

@ IC/IB = 1000

BE(sat)

1.2

V

@ VCE = 5.0 V

BE(on)

1.0

0.8
V

CE(sat)

@ IC/IB = 1000

0.6

5.0

7.0 10 20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA)

Figure 10. “On” Voltages

−1.0

−2.0

−3.0

−4.0

−5.0

, TEMPERATURE COEFFICIENTS (mV/ C)°

V

θ

R

−6.0

5.0 7.0 10 20 30 50 70 100 200 300 500

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4

Figure 9. Collector Saturation Region

*APPLIES FOR IC/IB ≤ hFE/3.0

*R

FOR V

q

qVB FOR V

CE(sat)

VC

BE

IC, COLLECTOR CURRENT (mA)

25°C TO 125°C

−55°C TO 25°C

25°C TO 125°C

−55°C TO 25°C

Figure 11. Temperature Coefficients

1.0

0.7
D = 0.5

0.5

0.2

0.3

0.2

0.1

0.1

0.07

0.05

0.03

RESISTANCE (NORMALIZED)

0.02

0.05

SINGLE PULSE

SINGLE PULSE

2N6426, 2N6427

Z
Z

q

JC(t)

q

JA(t)

= r(t) • R
= r(t) • R

T

T

J(pk)

J(pk)

− TC = P

− TA = P

q

JC

q

JA

(pk)

(pk)

Z

q

JC(t)

Z

q

JA(t)

0.01

, COLLECTOR CURRENT (mA)
I

2.0 5.01.00.50.20.1

1.0k
700

500

T

300

200

TA = 25°C

= 25°C

C

100

70
50

30

C

20

CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT

10

0.4

0.6 1.0 2.0 4.0 6.0 10 20
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

Figure 13. Active Region Safe Operating Area

20 5010 200 500100 1.0k 2.0k 5.0k 10k

t, TIME (ms)

Figure 12. Thermal Response

1.0 ms

100 ms

1.0 s

40

Design Note: Use of Transient

FIGURE A

t

P

P

P

t

1

1/f

t

DUTYCYCLE + t1f +

PEAK PULSE POWER = P

1

t

P

P

Thermal Resistance Data

P

P

ORDERING INFORMATION

Device Package Shipping

2N6426G TO−92

5,000 Units / Bulk

(Pb−Free)

2N6426RLRAG TO−92

2,000 / Tape & Ammo

(Pb−Free)

2N6427G TO−92

5,000 Units / Bulk

(Pb−Free)

2N6427RLRAG TO−92

2,000 / Tape & Ammo

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

†

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5

2N6426, 2N6427

TO−92 (TO−226)

PACKAGE DIMENSIONS

CASE 29−1 1

ISSUE AM

SEATING
PLANE

R

T

SEATING
PLANE

A

B

STRAIGHT LEAD

BULK PACK

R

P

L

K

XX

V

1

G

H

C

N

D

J

SECTION X−X

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.

DIM MIN MAX MIN MAX

A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533

G 0.045 0.055 1.15 1.39

H 0.095 0.105 2.42 2.66
J 0.015 0.020 0.39 0.50
K 0.500 −−− 12.70 −−−
L 0.250 −−− 6.35 −−−
N 0.080 0.105 2.04 2.66
P −−− 0.100 −−− 2.54
R 0.115 −−− 2.93 −−−
V 0.135 −−− 3.43 −−−

MILLIMETERSINCHES

N

A

B

P

K

XX

G

V

1

C

N

BENT LEAD

TAPE & REEL

AMMO PACK

D

J

SECTION X−X

NOTES:

1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.

MILLIMETERS

DIM MIN MAX

A 4.45 5.20
B 4.32 5.33
C 3.18 4.19
D 0.40 0.54
G 2.40 2.80
J 0.39 0.50
K 12.70 −−−
N 2.04 2.66
P 1.50 4.00
R 2.93 −−−
V 3.43 −−−

STYLE 1:

PIN 1. EMITTER

2. BASE

3. COLLECTOR

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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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2N6426/D

6