Page 1
2N6426, 2N6427
2N6426 is a Preferred Device
Darlington Transistors
NPN Silicon
Features
• These are Pb−Free Devices*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector − Emitter Voltage V
Collector − Base Voltage V
Emitter − Base Voltage V
Collector Current − Continuous I
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
CEO
CBO
EBO
P
P
TJ, T
C
D
D
stg
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
R
q
JA
R
q
JC
40 Vdc
40 Vdc
12 Vdc
500 mAdc
625
5.0
1.5
12
−55 to +150 °C
200 °C/W
83.3 °C/W
mW
mW/°C
W
mW/°C
TO−92
CASE 29
STYLE 1
http://onsemi.com
COLLECTOR 3
BASE
2
EMITTER 1
1
2
3
STRAIGHT LEAD
BULK PACK
MARKING DIAGRAM
1
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 3
1 Publication Order Number:
2N
642x
AYWWG
G
x = 6 or 7
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
2N6426/D
Page 2
2N6426, 2N6427
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage, (Note 1)
(I
= 10 mAdc, VBE = 0)
C
Collector−Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
Emitter−Base Breakdown Voltage
= 10 mAdc, IC = 0)
(I
E
Collector Cutoff Current
(V
= 25 Vdc, IB = 0)
CE
Collector Cutoff Current
(VCB= 30 Vdc, IE = 0)
Emitter Cutoff Current
(V
= 10 Vdc, IC = 0)
EB
ON CHARACTERISTICS
DC Current Gain, (Note 1)
(I
= 10 mAdc, VCE = 5.0 Vdc) 2N6426
C
(IC = 100 mAdc, VCE = 5.0 Vdc) 2N6426
(IC = 500 mAdc, VCE = 5.0 Vdc) 2N6426
Collector−Emitter Saturation Voltage
(I
= 50 mAdc, IB = 0.5 mAdc)
C
(IC = 500 mAdc, IB = 0.5 mAdc
Base−Emitter Saturation Voltage
(I
= 500 mAdc, IB = 0.5 mAdc)
C
Base−Emitter On Voltage
(I
= 50 mAdc, VCE = 5.0 Vdc)
C
SMALL−SIGNAL CHARACTERISTICS
Output Capacitance
(V
= 10 Vdc, IE = 0, f = 1.0 MHz)
CB
Input Capacitance
(V
= 1.0 Vdc, IC = 0, f = 1.0 MHz)
EB
Input Impedance
(I
= 10 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) 2N6426
C
Small−Signal Current Gain
(I
= 10 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) 2N6426
C
Current−Gain − High Frequency
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 2N6426
Output Admittance
(I
= 10 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
C
Noise Figure
= 1.0 mAdc, VCE = 5.0 Vdc, RS = 100 kW, f = 1.0 kHz)
(I
C
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
2N6427
2N6427
2N6427
2N6427
2N6427
2N6427
Symbol Min Typ Max Unit
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CES
I
CBO
I
EBO
h
V
CE(sat)
V
BE(sat)
V
BE(on)
C
obo
C
h
FE
ibo
ie
40 − − Vdc
40 − − Vdc
12 − − Vdc
− − 1.0
− − 50 nAdc
− − 50 nAdc
20,000
10,000
30,000
20,000
20,000
14,000
−
−
−
−
−
−
−
−
0.71
0.9
200,000
100,000
300,000
200,000
200,000
140,000
1.2
1.5
− 1.52 2.0 Vdc
− 1.24 1.75 Vdc
− 5.4 7.0 pF
− 10 15 pF
100
50
−
−
2000
1000
mAdc
Vdc
kW
hfe
20,000
10,000
−
−
−
−
|hfe|
1.5
1.3
h
oe
− − 1000
2.4
2.4
−
−
mmhos
NF − 3.0 10 dB
−
−
−
http://onsemi.com
2
Page 3
2N6426, 2N6427
R
S
NOISE CHARACTERISTICS
i
n
e
n
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
(VCE = 5.0 Vdc, TA = 25°C)
500
200
100
50
, NOISE VOLTAGE (nV)
20
n
e
5.0
101020 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
BANDWIDTH = 1.0 Hz
R
≈ 0
S
IC = 1.0 mA
f, FREQUENCY (Hz)
10 mA
100 mA
Figure 2. Noise Voltage
200
BANDWIDTH = 10 Hz TO 15.7 kHz
100
70
IC = 10 mA
50
30
20
, TOTAL WIDEBAND NOISE VOLTAGE (nV)
T
V
10
100 mA
1.0 mA
1.0
2.0 5.0 10 20 50 100 200 500 1000
RS, SOURCE RESISTANCE (kW)
2.0
1.0
0.7
0.5
0.3
0.2
0.1
, NOISE CURRENT (pA)
n
0.07
i
0.05
0.03
0.02
10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
BANDWIDTH = 1.0 Hz
IC = 1.0 mA
100 mA
10 mA
f, FREQUENCY (Hz)
Figure 3. Noise Current
14
12
10
8.0
6.0
4.0
NF, NOISE FIGURE (dB)
IC = 1.0 mA
2.0
0
1.0 2.0 5.0 10 20 50 100 200 500 1000
RS, SOURCE RESISTANCE (kW)
BANDWIDTH = 10 Hz TO 15.7 kHz
10 mA
100 mA
Figure 4. Total Wideband Noise Voltage
Figure 5. Wideband Noise Figure
http://onsemi.com
3
Page 4
2N6426, 2N6427
SMALL−SIGNALCHARACTERISTICS
20
10
7.0
5.0
C, CAPACITANCE (pF)
3.0
2.0
0.04
200k
100k
70k
50k
30k
20k
10k
, DC CURRENT GAIN
FE
7.0k
h
5.0k
3.0k
2.0k
5.0
TJ = 25°C
C
ibo
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Capacitance
TJ = 125°C
25°C
−55°C
7.0 10 20 30 50 70 100 200 300
IC, COLLECTOR CURRENT (mA)
VCE = 5.0 V
4.0
VCE = 5.0 V
f = 100 MHz
TJ = 25°C
2.0
1.0
C
obo
0.8
0.6
0.4
|, SMALL−SIGNAL CURRENT GAIN
fe
|h
0.2
0.5 1.0 2.0 0.5 10 20 50 100 200 500
IC, COLLECTOR CURRENT (mA)
Figure 7. High Frequency Current Gain
3.0
TJ = 25°C
2.5
500
IC =
2.0
1.5
1.0
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
CE
V
0.5
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000
50 mA 250 mA 500 mA
10 mA
IB, BASE CURRENT (mA)
V, VOLTAGE (VOLTS)
Figure 8. DC Current Gain
1.6
TJ = 25°C
1.4
V
@ IC/IB = 1000
BE(sat)
1.2
V
@ VCE = 5.0 V
BE(on)
1.0
0.8
V
CE(sat)
@ IC/IB = 1000
0.6
5.0
7.0 10 20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA)
Figure 10. “On” Voltages
−1.0
−2.0
−3.0
−4.0
−5.0
, TEMPERATURE COEFFICIENTS (mV/ C)°
V
θ
R
−6.0
5.0 7.0 10 20 30 50 70 100 200 300 500
http://onsemi.com
4
Figure 9. Collector Saturation Region
*APPLIES FOR IC/IB ≤ hFE/3.0
*R
FOR V
q
qVB FOR V
CE(sat)
VC
BE
IC, COLLECTOR CURRENT (mA)
25°C TO 125°C
−55°C TO 25°C
25°C TO 125°C
−55°C TO 25°C
Figure 11. Temperature Coefficients
Page 5
1.0
0.7
D = 0.5
0.5
0.2
0.3
0.2
0.1
0.1
0.07
0.05
0.03
RESISTANCE (NORMALIZED)
0.02
0.05
SINGLE PULSE
SINGLE PULSE
2N6426, 2N6427
Z
Z
q
JC(t)
q
JA(t)
= r(t) • R
= r(t) • R
T
T
J(pk)
J(pk)
− TC = P
− TA = P
q
JC
q
JA
(pk)
(pk)
Z
q
JC(t)
Z
q
JA(t)
0.01
, COLLECTOR CURRENT (mA)
I
2.0 5.01.00.50.20.1
1.0k
700
500
T
300
200
TA = 25°C
= 25°C
C
100
70
50
30
C
20
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
10
0.4
0.6 1.0 2.0 4.0 6.0 10 20
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 13. Active Region Safe Operating Area
20 5010 200 500100 1.0k 2.0k 5.0k 10k
t, TIME (ms)
Figure 12. Thermal Response
1.0 ms
100 ms
1.0 s
40
Design Note: Use of Transient
FIGURE A
t
P
P
P
t
1
1/f
t
DUTYCYCLE + t1f +
PEAK PULSE POWER = P
1
t
P
P
Thermal Resistance Data
P
P
ORDERING INFORMATION
Device Package Shipping
2N6426G TO−92
5,000 Units / Bulk
(Pb−Free)
2N6426RLRAG TO−92
2,000 / Tape & Ammo
(Pb−Free)
2N6427G TO−92
5,000 Units / Bulk
(Pb−Free)
2N6427RLRAG TO−92
2,000 / Tape & Ammo
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
†
http://onsemi.com
5
Page 6
2N6426, 2N6427
TO−92 (TO−226)
PACKAGE DIMENSIONS
CASE 29−1 1
ISSUE AM
SEATING
PLANE
R
T
SEATING
PLANE
A
B
STRAIGHT LEAD
BULK PACK
R
P
L
K
XX
V
1
G
H
C
N
D
J
SECTION X−X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533
G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66
J 0.015 0.020 0.39 0.50
K 0.500 −−− 12.70 −−−
L 0.250 −−− 6.35 −−−
N 0.080 0.105 2.04 2.66
P −−− 0.100 −−− 2.54
R 0.115 −−− 2.93 −−−
V 0.135 −−− 3.43 −−−
MILLIMETERSINCHES
N
A
B
P
K
XX
G
V
1
C
N
BENT LEAD
TAPE & REEL
AMMO PACK
D
J
SECTION X−X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
MILLIMETERS
DIM MIN MAX
A 4.45 5.20
B 4.32 5.33
C 3.18 4.19
D 0.40 0.54
G 2.40 2.80
J 0.39 0.50
K 12.70 −−−
N 2.04 2.66
P 1.50 4.00
R 2.93 −−−
V 3.43 −−−
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
http://onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
2N6426/D
6
Loading...