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UNISONIC TECHNOLOGIES CO., LTD
13N50
Preliminary
500V N-CHANNEL MOSFET
DESCRIPTION
The UTC 13N50 is an N-Channel enhancement mode power MOSFET.
The device adopts planar stripe and uses DMOS technology to minimize
and provide lower on-state resistance and faster switching speed. It can
also withstand high energy pulse under the avalanche and commutation
mode conditions.
The UTC 13N50 is ideally suitable for high efficiency switch mode
power supply, power factor correction, electronic lamp ballast based on half
bridge topology.
FEATURES
* R
* Ultra low gate charge (typical 43 nC )
* Low reverse transfer Capacitance ( C
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
=0.48 @VGS = 10 V
DS(ON)
= typical 20pF )
RSS
Power MOSFET
1
1
1
TO-220
TO-220F
TO-220F1
SYMBOL
ORDERING INFORMATION
Ordering Number Pin Assignment
Lead Free Halogen Free
13N50L-TA3-T 13N50G-TA3-T TO-220 G D S Tube
13N50L-TF3-T 13N50G-TF3-T TO-220F G D S Tube
13N50L- TF1-T 13N50G-TF1-T TO-220F1 G D S Tube
Package
1 2 3
Packing
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13N50 Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (T
= 25°C, unless otherwise specified)
C
PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage V
Gate-Source Voltage V
500 V
DSS
±30 V
GSS
Continuous Drain Current ID 13 A
Pulsed Drain Current (Note 2) IDM 52 A
Avalanche Current (Note 2) IAR 13 A
Single Pulsed Avalanche Energy (Note 3) EAS 810 mJ
Repetitive Avalanche Energy (Note 2) EAR 17 mJ
Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns
Power Dissipation (TC=25°C)
TO-220 168 W
TO-220F
PD
48 W
Junction Temperature TJ +150 °C
Storage Temperature T
-55~+150 °C
STG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 9.3mA, I
4. I
≤13.A, di/dt ≤200A/s, VDD≤ BV
SD
= 13A, VDD = 50V, RG= 25 ,Starting TJ = 25°C
AS
, Starting TJ= 25°C
DSS
THERMAL DATA
PARAMETER SYMBOL RATINGS UNIT
Junction to Ambient
Junction to Case
TO-220 62.5 °C/W
TO-220F
TO-220 0.74 °C/W
TO-220F
JA
JC
62.5 °C/W
2.58 °C/W
ELECTRICAL CHARACTERISTICS (T
=25°C, unless otherwise specified)
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BV
Drain-Source Leakage Current I
Gate-Source Leakage Current I
Breakdown Voltage Temperature
Coefficient
△BV
VGS = 0V, ID = 250A 500 V
DSS
VDS = 500V, VGS = 0V 1 A
DSS
VGS = 30V, VDS = 0V 100 nA
GSS
DSS
VGS = -30V, VDS = 0V -100 nA
ID = 250A
/△T
J
Referenced to 25°C
0.5 V/°C
ON CHARACTERISTICS
Gate Threshold Voltage V
Static Drain-Source On-State Resistance R
VDS = VGS, ID = 250A 2.0 4.0 V
GS(TH)
VGS = 10V, ID = 6.5A 0.33 0.43
DS(ON)
Forward Transconductance gFS VDS=50V, ID=6.25A (Note 1) 10 S
DYNAMIC CHARACTERISTICS
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
1800 2300 pF
ISS
VDS=25V, VGS=0V, f=1.0MHz
245 320 pF
OSS
RSS
25 35 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time t
Turn-On Rise Time tR 140 290 nS
Turn-Off Delay Time t
Turn-Off Fall Time tF
Total Gate Charge QG 45 60 nC
Gate-Source Charge QGS 11 nC
Gate-Drain Charge QGD
40 90 nS
D(ON)
=250V, ID =13A
V
DD
R
100 210 nS
D(OFF)
=25 (Note 1,2)
G
85 180 nS
V
=400V, ID=13A, VGS=10 V
DS
(Note 1, 2)
22 nC
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13N50 Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage VSD VGS = 0V, IS = 13 A 1.4 V
Maximum Continuous Drain-Source
Diode Forward Current
Maximum Pulsed Drain-Source Diode
Forward Current
Reverse Recovery Time tRR 290 nS
Reverse Recovery Charge QRR
Notes: 1. Pulse Test : Pulse width≤300s, Duty cycle≤2%
2. Essentially independent of operating ambient temperature
I
S
I
SM
= 0V, IS = 13A,
V
GS
dI
/ dt = 100A/s (Note 1)
F
13 A
52 A
2.6 C
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13N50 Preliminary
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
V
GS
(Driver)
D.U.T.
+
V
DS
-
I
SD
L
Driver
R
G
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
V
DD
G
* ISD controlled by pulse period
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
Gate Pulse Width
D=
Gate Pulse Period
10V
I
SD
(D.U.T.)
V
DS
(D.U.T.)
, Body Diode Forward Current
I
FM
di/dt
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
SD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
V
DD
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13N50 Preliminary
TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
12V
Fig. 2A Switching Test Circuit Fig.2B Switching Waveforms
V
GS
0.2µF
3mA
V
50k
GS
0.3µF
Same Type
as D.U.T.
DUT
10V
Q
V
DS
GS
Q
G
Q
GD
Charge
Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform
Fig. 4A Unclamped Inductive Switching Test Circuit F ig. 4B Unclamped Inductive Switching Waveforms
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13N50 Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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