AUSTN AS8S512K32Q-55L-XT, AS8S512K32Q-55L-IT, AS8S512K32Q-55L-883C, AS8S512K32Q-45L-XT, AS8S512K32Q-45L-883C Datasheet

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AUSTN AS8S512K32Q-55L-XT, AS8S512K32Q-55L-IT, AS8S512K32Q-55L-883C, AS8S512K32Q-45L-XT, AS8S512K32Q-45L-883C Datasheet

		SRAM
		AS8S512K32
	Austin Semiconductor, Inc.	& AS8S512K32A

512K x 32 SRAM

PIN ASSIGNMENT

SRAM MEMORY ARRAY

(Top View)

AVAILABLE AS MILITARY

68 Lead CQFP (Q)

SPECIFICATIONS

Military SMD Pinout Option

• SMD 5962-94611 (Military Pinout)

NC A0 A1 A2 A3 A4 A5 CS3\

GND CS4\

WE1\

A6 A7 A8

A10

Vcc

•

MIL-STD-883

9 8 7 6 5 4 3 2 1 8 7 6 5 4 3 2 1

FEATURES

I/O 0

1 0

6 6 6 6 6 6 6 6

I/O 16

6 0

I/O 1

1 1

5 9

I/O 17

• Operation with single 5V supply

I/O 2

1 2

5 8

I/O 18

I/O 3

1 3

5 7

I/O 19

• High speed: 17, 20, 25 and 35ns

I/O 4

1 4

5 6

I/O 20

I/O 5

1 5

5 5

I/O 21

• Built in decoupling caps for low noise

I/O 6

1 6

5 4

I/O 22

• Organized as 512Kx32 , byte selectable

I/O 7

1 7

5 3

I/O 23

GND

1 8

5 2

GND

•

Low power CMOS

I/O 8

1 9

5 1

I/O 24

I/O 9

2 0

5 0

I/O 25

• TTL Compatible Inputs and Outputs

I/O 10

2 1

4 9

I/O 26

2 2

•

Future offerings

I/O 11

4 8

I/O 27

I/O 12

2 3

4 7

I/O 28

3.3V Power Supply

I/O 13

2 4

4 6

I/O 29

I/O 14

2 5

4 5

I/O 30

15 ns Ultra High Speed

I/O 15

2 6

2 8 2 9 3 0 3 1 3 2 3 3 3 4

3 5 3 6

3 7

3 8 3 9 4 0

4 1

4 2

4 4

I/O 31

2 7

4 3

OPTIONS

MARKINGS

Vcc A11 A12 A13 A14 A15 A16 CS1\

OE\ CS2\

A17

WE2\ WE3\ WE4\

A18

68 Lead CQFP

•

Operating Temperature Ranges

Commercial Pinout Option (A)

Military (-55oC to +125oC)

Industrial (-40oC to +85oC)

I/O 16

A18 A17 CS4\ CS3\ CS2\ CS1\ NC

Vcc NC

OE\ WE\ A16

A15

A14

I/O 15

•

Timing

I/O17

9 8 7 6 5 4 3 2 1 8 7 6 5 4 3 2 1

I/O 14

1 0

6 0

6 6 6 6 6 6 6 6

17ns

-17

I/O18

1 1

5 9

I/O 13

I/O19

1 2

5 8

I/O 12

20ns

-20

Vss

1 3

5 7

Vss

25ns

-25

I/O20

1 4

5 6

I/O 11

I/O21

1 5

5 5

I/O 10

35ns

-35

I/O22

1 6

5 4

I/O 9

I/O23

1 7

5 3

I/O 8

45ns

-45

Vcc

1 8

5 2

Vcc

I/O24

1 9

5 1

I/O 7

55ns

-55

I/O25

2 0

5 0

I/O 6

I/O26

2 1

4 9

I/O 5

I/O27

2 2

4 8

I/O 4

•

Package

Vss

2 3

4 7

Vss

No.702

I/O28

2 4

4 6

I/O 3

Ceramic Quad Flatpack

I/O29

2 5

4 5

I/O 2

I/O30

2 6

4 4

I/O 1

Pin Grid Array

No.904

7 8 9 0 1 2 3 4 5 6 7 8 9 0 1 2 3

2 2 2 3 3 3 3 3 3 3 3 3 3 4 4 4 4

• Low Power Data Retention Mode

I/O 31

A6 A5 A4 A3 A2 A1 A0

Vcc A13 A12 A11 A10 A9 A8 A7

I/O 0

•

Pinout

66 Lead PGA (P)

Military SMD Pinout

Military

(no indicator)

Commercial

GENERAL DESCRIPTION

The Austin Semiconductor, Inc. AS8S512K32 and

AS8S512K32A are 16 Megabit CMOS SRAM Modules organized as

512Kx32 bits. These devices achieve high speed access, low power

consumption and high reliability by employing advanced CMOS

memory technology.

This military temperature grade product is ideally suited for

military and space applications.

For more products and information

please visit our web site at

www.austinsemiconductor.com


AS8S512K32 & AS8S512K32A	Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
Rev. 3.1 12/01	1
	1

		SRAM
		AS8S512K32
	Austin Semiconductor, Inc.	& AS8S512K32A

CS4\CS\4

CS3\CS\3

CS2\CS\2

CS1\CS\1

WE\

OE\ A0 - A18

		M3 x8
		M2	8	512K
			512K x
M1		8
		512K x
M0	8
	512K x

I/O 24 - I/O 31

I/O 16 - I/O 23

I/O 8 - I/O 15

I/O 0 - I/O 7

MILITARY PINOUT/BLOCK DIAGRAM

COMMERCIAL PINOUT/BLOCK DIAGRAM

TRUTH TABLE

MODE	OE\	CSE\	WE\	I/O	POWER
Read	L	L	H	DOUT	ACTIVE
Write(2)	X	L	L	DIN	ACTIVE
Standby	X	H	X	High Z	STANDBY


AS8S512K32 & AS8S512K32A	Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
Rev. 3.1 12/01	2
	2

		SRAM
		AS8S512K32
	Austin Semiconductor, Inc.	& AS8S512K32A

ABSOLUTE MAXIMUM RATINGS*

Voltage of Vcc Supply Relative to Vss......................	-.5V to +7V
Storage Temperature............................................	-65°C to +150°C
Short Circuit Output Current(per I/O).................................	20mA
Voltage on Any Pin Relative to Vss....................	-.5V to Vcc+1V
Maximum Junction Temperature**...................................	+150°C

*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.

This is a stress rating only and functional operation on the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

**Junction temperature depends upon package type, cycle time, loading, ambient temperature and airflow. See the Application Information section at the end of this datasheet for more information.

ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS

(-55oC < TA < 125oC and -40oC to +85oC; Vcc = 5V +10%)

DESCRIPTION			CONDITIONS		SYMBOL			MIN		MAX			UNITS		NOTES
Input High (logic 1) Voltage						VIH		2.2		VCC+.5			V		1
Input Low (logic 1) Voltage						VIL		-0.5			0.8		V		1,2
Input Leakage Current ADD,OE			0V<VIN<VCC			ILI1		-10			10		μA
Input Leakage Current WE, CE			0V<VIN<VCC			ILI2		-10			10		μA
Input Leakage Current WE, CE						ILI2		-10			10		μA
Output Leakage Current I/O			Output(s) Disabled		ILO			-10			10		μA
Output Leakage Current I/O			0V<VOUT<VCC		ILO			-10			10		μA
			0V<VOUT<VCC
Output High Voltage			IOH = 4.0mA			VOH		2.4					V		1
Output Low Voltage			IOL = 8.0mA			VOL					0.4		V		1
Supply Voltage						VCC		4.5			5.5		V		1

								MAX
DESCRIPTION		CONDITIONS		SYMBOL	-17		-20	-25	-35			-45	-55	UNITS		NOTES
Power Supply	CS\<VIL; VCC = MAX
Power Supply	f = MAX = 1/ tRC (MIN)			Icc	700		650	600	570			570	550	mA		3,13
Current: Operating	f = MAX = 1/ tRC (MIN)			Icc	700		650	600	570			570	550	mA		3,13
		Outputs Open

Power Supply	CS\>VIH; VCC = MAX
Power Supply	f = MAX = 1/ tRC (MIN)			ISBT1	240		240	190	190			150	150	mA		3, 13
Current: Standby	f = MAX = 1/ tRC (MIN)			ISBT1	240		240	190	190			150	150	mA		3, 13
Current: Standby		Outputs Open
		Outputs Open

	VIN = VCC - 0.2V, or
CMOS Standby		VSS +0.2V		ISBT2	80		80	80	80			80	80	mA
	VCC=Max; f = 0Hz


AS8S512K32 & AS8S512K32A	Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
Rev. 3.1 12/01	3
	3

		SRAM
		AS8S512K32
	Austin Semiconductor, Inc.	& AS8S512K32A

CAPACITANCE (VIN = 0V, f = 1MHz, TA = 25oC)1

SYMBOL	PARAMETER	MAX	UNITS
CADD	A0 - A18 Capacitance	50	pF
COE	OE\ Capacitance	50	pF
CWE, CCS	WE\ and CS\ Capacitance	20	pF
CIO	I/O 0- I/O 31 Capacitance	20	pF
CWE ("A" version)	WE\ Capacitance	50	pF

NOTE:

1. This parameter is sampled.

AC TEST CONDITIONS

Test Specifications

Input pulse levels.........................................	VSS to 3V
Input rise and fall times.........................................	5ns
Input timing reference levels...............................	1.5V
Output reference levels........................................	1.5V
Output load..............................................	See Figure 1

			IOL
Current Source
Device	-	+	Vz = 1.5V
Under	-	+
Under
Test	+		(Bipolar
			Supply)
Ceff = 50pf
Current Source			IOH

	NOTES:	Figure 1
	Vz is programmable from -2V to + 7V.	Figure 1
	Vz is programmable from -2V to + 7V.
	IOL and IOH programmable from 0 to 16 mA.
	Vz is typically the midpoint of VOH and VOL.
	IOL and IOH are adjusted to simulate a typical resistive load
	circuit.


AS8S512K32 & AS8S512K32A	Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
Rev. 3.1 12/01	4
	4

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