AUSTN AS5C4008ECJ-35L-883C, AS5C4008ECJ-25L-XT, AS5C4008ECJ-25L-883C, AS5C4008ECJ-20L-XT, AS5C4008ECJ-20L-IT Datasheet

Austin Semiconductor, Inc.

512K x 8 SRAM

SRAM MEMORY ARRAY

AVAILABLE AS MILITARY SPECIFICATION

•SMD 5962-95600

•SMD 5962-95613

•MIL STD-883

FEATURES

•High Speed: 17, 20, 25, 35 and 45ns

•High-performance, low power military grade device

•Single +5V ±10% power supply

•Easy memory expansion with CE\ and OE\ options

•	All inputs and outputs are TTL-compatible
•	Ease of upgradability from 1 Meg using the 32 pin
	evolutionary version.

OPTIONS		MARKING
•	Timing
	15ns access (contact factory)	-15
	17ns access	-17
	20ns access	-20		A18
	25ns access	-25
				A16
	35ns access	-35
				A14
	45ns access	-45
•				A12
	Operating Temperature Range			A7
	Military: -55oC to +125oC	XT		A6
	Industrial: -40oC to +85oC	IT		A5
•	Packages			A4
				A3
	Ceramic Dip (600 mil)	CW	No. 112
				A2
	Ceramic Flatpack	F	No. 304	A1
	Ceramic LCC	EC	No. 209	A0
	Ceramic SOJ	ECJ	No. 502	I/O0
				I/O1
	Ceramic LCC (contact factory)	ECA	No. 208
				I/O2
•	Options
				Vss
	2V data retention/ low power	L

NOTE: Not all combinations of operating temperature, speed, data retention and low power are necessarily available. Please contact factory for availability of specific part number combinations.

GENERAL DESCRIPTION

The AS5C4008 is a 4 megabit monolithic CMOS SRAM, organized as a 512K x 8.

The evolutionary 32 pin device allows for easy upgrades from the 1 meg SRAM.

For flexibility in high-speed memory applications, ASI offers chip enable (CE\) and output enable (OE\) capabilities. These enhancements can place the outputs in High-Z for additional flexibility in system design.

Writing to these devices is accomplished when write enable (WE\) and CE\ inputs are both LOW. Reading is accomplished when WE\ remains HIGH and CE\ and OE\ go LOW. This allows systems designers to meet low standby power requirements.

All devices operate from a single +5V power supply and all inputs are fully TTL-Compatible.

SRAM

AS5C4008

PIN ASSIGNMENT

(Top View)

32-Pin DIP (CW), 32-Pin LCC (EC)

32-Pin SOJ (ECJ)

A18	1	32	Vcc
A16	2	31	A15
A14	3	30	A17
A12	4	29	WE\
A7	5	28	A13
A6	6	27	A8
A5	7	26	A9
A4	8	25	A11
A3	9	24	OE\
A2	10	23	A10
A1	11	22	CE\
A0	12	21	I/O7
I/O0	13	20	I/O6
I/O1	14	19	I/O5
I/O2	15	18	I/O4
Vss	16	17	I/O3

32-Pin Flat Pack (F)

1	32		Vcc
2	31		A15
3	30		A17
4	29		WE\
5	28		A13
6	27		A8
7	26		A9
8	25		A11
9	24		OE\
10	23		A10
11	22		CE\
12	21		I/O7
13	20		I/O6
14	19		I/O5
15	18		I/O4
16	17		I/O3

32-Pin LCC (ECA)

	A12	A14	A16	A18		Vcc	A15	A17
	4	3	2			32	31 30
A7	5			1				2 9	WE\
A6	6							2 8	A13
A5	7							2 7	A8
A4	8							2 6	A9
A3	9							2 5	A11
A2	1 0							2 4	OE\
A1	1 1							2 3	A10
A0	1 2							2 2	CE\
I/O0	1 3							2 1	I/O 7
	14 15 16 17 18 19 20
	I/O1	I/O2	Vss	I/O3		I/O4	I/O5	I/O6

For more products and information please visit our web site at www.austinsemiconductor.com

AS5C4008	Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
Rev. 5.5 12/01	1

A0:A18

SRAM

AS5C4008

Austin Semiconductor, Inc.

	FUNCTIONAL BLOCK DIAGRAM
		Vcc	GND
BufferInput	DecoderRow		ControlI/O	I/O7
		2,097,152 Bit
		Memory Array		I/O1
				CE\
				OE\
				WE\
		Column Decoder
				Power
				Down

TRUTH TABLE

MODE	OE\	CE\	WE\	DQ	POWER
STANDBY	X	H	X	High-Z	STANDBY
READ	L	L	H	Q	ACTIVE
NOT SELECTED	H	L	H	High-Z	ACTIVE
WRITE	X	L	L	D	ACTIVE

AS5C4008	Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
Rev. 5.5 12/01	2

SRAM

AS5C4008

Austin Semiconductor, Inc.

ABSOLUTE MAXIMUM RATINGS*

Voltage on Vcc Supply Relative to Vss...................	-.5V to +7.0V
Storage Temperature ............................................	-65°C to +150°C
Short Circuit Output Current (per I/O)….............................20mA
Voltage on any Pin Relative to Vss......................	-.5V to Vcc+1 V
Maximum Junction Temperature**....................................	+150°C

*Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

** Junction temperature depends upon package type, cycle time, loading, ambient temperature and airflow.

ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS

(-55oC<T <125oC or -40oC to +85oC; Vcc = 5V +10%)
	A
	PARAMETER					CONDITION				SYMBOL					MIN				MAX				UNITS				NOTES
	Input High (Logic 1) Voltage									VIH				2.2				VCC +0.5					V				1
	Input Low (Logic 0) Voltage									VIL				-0.5					0.8				V				1, 2
	Input Leakage Current					OV < VIN < Vcc				ILI				-10					10				μΑ
	Output Leakage Current					Output(s) disabled				ILO				-10					10				μΑ
						OV < VOUT < Vcc
	Output High Voltage					IOH = -4.0 mA				VOH				2.4					--				V				1
	Output Low Voltage					IOL = 8.0 mA				VOL				---					0.4				V				1
	Supply Voltage									Vcc				4.5					5.5				V				1
															MAX
	PARAMETER			CONDITIONS				SYM		-15		-17		-20			-25			-35			-45		UNITS			NOTES
				CE\ < VIL; Vcc = MAX
	Power Supply Current:			f = MAX = 1/tRC				ICCSP		225		225		225			225			225			225		mA			3
	Operating			Outputs Open
						L Version Only		ICCLP		180		180		180			180			180			180		mA
				CE\ > VIH; Vcc = MAX				ISBTSP		60		60		60			60			60			60		mA
				f = 0, Outputs Open
	Power Supply Current:					L Version Only		ISBTLP		30		30		30			30			30			30		mA
	Standby		CE\ < VCC -0.2V; Vcc = MAX
				VIN < Vss +0.2V or				ISBCSP		25		25		25			25			25			25		mA
				VIN > Vcc -0.2V; f = 0
						L Version Only		ISBCLP		10		10		10			10			10			10		mA
CAPACITANCE
	PARAMETER					CONDITIONS				SYMBOL						MAX					UNITS				NOTES
	Input Capacitance					o				CI						12						pF					4
						TA = 25 C, f = 1MHz
	Output Capactiance					VIN = 0				Co						14						pF					4

AS5C4008	Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
Rev. 5.5 12/01	3

SRAM

AS5C4008

Austin Semiconductor, Inc.

ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS

(-55oC<T <125oC or -40oC to +85oC; Vcc = 5V +10%)

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AS5C4008	Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
Rev. 5.5 12/01	4

SRAM

AS5C4008

Austin Semiconductor, Inc.

AC TEST CONDITIONS

...................................................Input pulse levels	Vss to 3.0V
Input rise and fall times .......................................................	3ns
Input timing reference levels ............................................	1.5V
Output reference levels .....................................................	1.5V
Output load ...............................................	See Figures 1 and 2

	Q	167 ohms	Q	167 ohms
		1.73V		1.73V
		C=30pF		C=5pF

Fig. 1 Output Load Equivalent

NOTES

1.All voltages referenced to VSS (GND).

2.-2V for pulse width < 20ns

3.ICC is dependent on output loading and cycle rates.

4.This parameter is guaranteed but not tested.

5.Test conditions as specified with the output loading as shown in Fig. 1 unless otherwise noted.

6.tLZCE, tLZWE, tLZOE, t HZCE, tHZOE and tHZWE are specified with CL = 5pF as in Fig. 2. Transition is measured ±200mV from steady state voltage.

7.At any given temperature and voltage condition, tHZCE is less than tLZCE, and tHZWE is less than tLZWE.

8.WE\ is HIGH for READ cycle.

Fig. 2 Output Load Equivalent

9.Device is continuously selected. Chip enables and output enables are held in their active state.

10.Address valid prior to, or coincident with, latest occurring chip enable.

11.tRC = Read Cycle Time.

12.Chip enable and write enable can initiate and terminate a WRITE cycle.

13.Output enable (OE\) is inactive (HIGH).

14.Output enable (OE\) is active (LOW).

15.ASI does not warrant functionality nor reliability of any product in which the junction temperature exceeds 150°C. Care should be taken to limit power to acceptable levels.

DATA RETENTION ELECTRICAL CHARACTERISTICS (L Version Only)

DESCRIPTION	CONDITIONS		SYMBOL	MIN	MAX	UNITS	NOTES
VCC for Retention Data	CE\ > (Vcc -0.2V)		VDR	2		V
	VIN > (Vcc -0.2V) or < 0.2V
Data Retention Current		VCC = 2V	ICCDR		4.5	mA
(L Version Only)
Chip Deselect to Data			tCDR	0		ns	4
Retention Time
Operation Recovery Time			tR	10		ms	4, 11

AS5C4008	Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
Rev. 5.5 12/01	5

			SRAM
	Austin Semiconductor, Inc.		AS5C4008
	LOW VCC DATA RETENTION WAVEFORM
		DATA RETENTION MODE
		VDR >2V
Vcc	4.5V	4.5V
	t		t
VIH	tCDR		tR
		VDR
CE\

VIL

	READ CYCLE NO. 1 8, 9
	(Write Enabled Controlled)
	t
	tRC
ADDRESS	VALID
	ttAA
	ttOH
DQ	PREVIOUS DATA VALID	DATA VALID

READ CYCLE NO. 2 7, 8, 10

(Write Enabled Controlled)

		t
		tRC
CE\
	t
	tAOE	t
t		tHZOE
tLZOE
OE\
t		t
tLZCEt
	tACE	tHZCE
DQ		DATA VALID
ttPU		ttPD
Icc

AS5C4008	Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
Rev. 5.5 12/01	6