– 120 Powerful Instructions – Most Single Clock Cycle Execution
– 32 x 8 General Purpose Working Registers
– Fully Static Operation
– Up to 20 MIPS Througput at 20 MHz
• High Endurance Non-volatile Memory segments
– 1K Bytes of In-System Self-programmable Flash program memory
– 64 Bytes EEPROM
– 64K Bytes Internal SRAM
– Write/Erase cyles: 10,000 Flash/100,000 EEPROM
– Data retention: 20 years at 85°C/100 years at 25°C
– Optional Boot Code Section with Independent Lock Bits
In-System Programming by On-chip Boot Program
True Read-While-Write Operation
– Programming Lock for Software Security
• Peripheral Features
– One 8-bit Timer/Counter with Prescaler and Two PWM Channels
– 4-channel, 10-bit ADC with Internal Voltage Reference
– Programmable Watchdog Timer with Separate On-chip Oscillator
– On-chip Analog Comparator
• Special Microcontroller Features
– debugWIRE On-chip Debug System
– In-System Programmable via SPI Port
– External and Internal Interrupt Sources
– Low Power Idle, ADC Noise Reduction, and Power-down Modes
– Enhanced Power-on Reset Circuit
– Programmable Brown-out Detection Circuit
– Internal Calibrated Oscillator
• I/O and Packages
– 8-pin PDIP/SOIC: Six Programmable I/O Lines
– 20-pad MLF: Six Programmable I/O Lines
• Operating Voltage:
– 1.8 - 5.5V for ATtiny13V
– 2.7 - 5.5V for ATtiny13
Microcontroller
with 1K Bytes
In-System
Programmable
Flash
ATtiny13V
ATtiny13
Summary
2535HS–AVR–10/07
Rev. 2535HS–AVR–10/07
Pin ConfigurationsFigure 1. Pinout ATtiny13
(PCINT5/RESET/ADC0/dW) PB5
(PCINT3/CLKI/ADC3) PB3
(PCINT4/ADC2) PB4
8-PDIP/SOIC
1
2
3
GND
4
20-QFN/MLF
NCNCNCNCNC
8
VCC
7
PB2 (SCK/ADC1/T0/PCINT2)
6
PB1 (MISO/AIN1/OC0B/INT0/PCINT1)
5
PB0 (MOSI/AIN0/OC0A/PCINT0)
(PCINT5/RESET/ADC0/dW) PB5
(PCINT3/CLKI/ADC3) PB3
NC
NC
(PCINT4/ADC2) PB4
NOTE: Bottom pad should be soldered to ground.
NC: Not Connect
(PCINT5/RESET/ADC0/dW) PB5
(PCINT3/CLKI/ADC3) PB3
NC
(PCINT4/ADC2) PB4
GND
NOTE: Bottom pad should be soldered to ground.
NC: Not Connect
2019181716
1
2
3
4
5
6
789
NC
NC
GND
10-QFN/MLF
1
2
3
4
5
NC
15
VCC
14
PB2 (SCK/ADC1/T0/PCINT2)
13
NC
12
PB1 (MISO/AIN1/OC0B/INT0/PCINT1)
11
PB0 (MOSI/AIN0/OC0A/PCINT0)
10
NC
10
VCC
9
PB2 (SCK/ADC1/T0/PCINT2)
8
NC
7
PB1 (MISO/AIN1/OC0B/INT0/PCINT1)
6
PB0 (MOSI/AIN0/OC0A/PCINT0)
OverviewThe ATtiny13 is a low-power CMOS 8-bit microcontroller based on the AVR enhanced
RISC architecture. By executing powerful instructions in a single clock cycle, the
ATtiny13 achieves throughputs approaching 1 MIPS per MHz allowing the system
designer to optimize power consumption versus processing speed.
2
ATtiny13
2535HS–AVR–10/07
Block DiagramFigure 2. Block Diagram
ATtiny13
8-BIT DATABUS
VCC
GND
INSTRUCTION
REGISTER
INSTRUCTION
DECODER
CONTROL
LINES
STACK
POINTER
SRAM
PROGRAM
COUNTER
PROGRAM
FLASH
GENERAL
PURPOSE
REGISTERS
X
Y
Z
ALU
STATUS
REGISTER
WATCHDOG
OSCILLATOR
WATCHDOG
TIMER
MCU CONTROL
REGISTER
MCU STATUS
REGISTER
TIMER/
COUNTER0
INTERRUPT
UNIT
PROGRAMMING
LOGIC
DATA
EEPROM
CALIBRATED
INTERNAL
TOR
OSCILLA
TIMING AND
CONTROL
ADC /
ANALOG COMPARATOR
DATA REGISTER
PORT B
PORT B DRIVERS
PB0-PB5
DATA DIR.
REG.PORT B
RESET
CLKI
The AVR core combines a rich instruction set with 32 general purpose working registers.
All the 32 registers are directly connected to the Arithmetic Logic Unit (ALU), allowing
two independent registers to be accessed in one single instruction executed in one clock
cycle. The resulting architecture is more code ef ficient while a chieving th roughputs up to
ten times faster than conventional CISC microcontrollers.
The ATtiny13 provides the following features: 1K byte of In-System Programmable
Flash, 64 bytes EEPROM, 64 bytes SRAM, 6 general purpose I/O line s, 32 ge neral pu rpose working registers, one 8-bit Timer/Counter with compare modes, Internal and
External Interrupts, a 4-channel, 10-bit ADC, a programmable Watchdog Timer with
internal Oscillator, and three software selectable power saving modes. The Idle mode
stops the CPU while allowing the SRAM, Timer/Counter, ADC, Analog Comparator, and
2535HS–AVR–10/07
3
Interrupt system to continue functioning. The Power-down mode saves the register contents, disabling all chip functions until the next Interrupt or Hardware Reset. The ADC
Noise Reduction mode stops the CPU and all I/O modules except ADC, to minimize
switching noise during ADC conversions.
The device is manufactured using Atmel’s high density non-vo latile m emo ry te chno logy.
The On-chip ISP Flash allows the Program memory to be re-programmed In-System
through an SPI serial interface, by a conventional non-volatile memory programmer or
by an On-chip boot code running on the AVR core.
The ATtiny13 AVR is supported with a full suite of program and system development
tools including: C Compilers, Macro Assemblers, Program Debugger/Simulators, In-Circuit Emulators, and Evaluation kits.
Pin Descriptions
VCCDigital supply voltage.
GNDGround.
Port B (PB5..PB0)Port B is a 6-bit bi-directional I/O port with internal pull-up resistors (selected for each
bit). The Port B output buffers have symmetrical drive character istics with both high sink
and source capability. As inputs, Port B pins that are externally pulled low will source
current if the pull-up resistors are activated. The Port B pins are tri-stated when a reset
condition becomes active, even if the clock is not running.
Port B also serves the functions of various special features of the ATtiny13 as listed on
page 51.
RESET
Reset input. A low level on this pin for longer than the minimum pulse length will generate a reset, even if the clock is not running. The minimum pulse length is given in Table
12 on page 31. Shorter pulses are not guaranteed to generate a reset.
Note:1.
Data RetentionReliability Qualification results show that the projected data retention failure rate is much
less than 1 PPM over 20 years at 85°C or 100 years at 25°C.
About Code
Examples
This documentation contains simple code examples that briefl y show how to use various
parts of the device. These code examples assume that the part specific header file is
included before compilation. Be aware t hat not all C c ompiler vendors in clude bit de finitions in the header files and interrupt handling in C is compiler dependent. Please
confirm with the C compiler documentation for more details.
Note:1. For compatibility with future devices, reserved bits should be written to zero if accessed. Reserved I/O memory addresses
should never be written.
2. I/O Registers within the address range 0x00 - 0x1F are directly bit-accessible using the SBI and CBI instructions. In these
registers, the value of single bits can be checked by using the SBIS and SBIC instructions.
3. Some of the Status Flags are cleared by writing a logica l one to them. Note that, unlike most other AVRs, the CBI and SBI
instructions will only operation the specified bit, and can therefore be used on registers containing such Status Flags. The
CBI and SBI instructions work with registers 0x00 to 0x1F only.
6
ATtiny13
2535HS–AVR–10/07
ATtiny13
Instruction Set Summary
MnemonicsOperandsDescriptionOperationFlags#Clocks
ARITHMETIC AND LOGIC INSTRUCTIONS
ADDRd, RrAdd two RegistersRd ← Rd + RrZ,C,N,V,H1
ADCRd, RrAdd with Carry two RegistersRd ← Rd + Rr + CZ,C,N,V,H1
ADIWRdl,KAdd Immediate to WordRdh:Rdl ← Rdh:Rdl + KZ,C,N,V,S2
SUBRd, RrSubtract two RegistersRd ← Rd - RrZ,C,N,V,H1
SUBIRd, KSubtract Constant from Register Rd ← Rd - KZ,C,N,V,H1
SBCRd, RrSubtract with Carry two RegistersRd ← Rd - Rr - CZ,C,N,V,H1
SBCIRd, KSubtract with Carry Constant from Reg.Rd ← Rd - K - CZ,C,N,V,H1
SBIWRdl,KSubtract Immediate from WordRdh:Rdl ← Rdh:Rdl - KZ,C,N,V,S2
ANDRd, RrLogical AND RegistersRd ← Rd • RrZ,N,V1
ANDIRd, KLogical AND Register and ConstantRd ← Rd • KZ,N,V1
ORRd, RrLogical OR RegistersRd ← Rd v RrZ,N,V1
ORIRd, KLogical OR Register and ConstantRd ← Rd v KZ,N,V1
EORRd, RrExclusive OR RegistersRd ← Rd ⊕ RrZ,N,V1
COMRdOne’s ComplementRd ← 0xFF − RdZ,C,N,V1
NEGRdTwo’s ComplementRd ← 0x00 − RdZ,C,N,V,H1
SBRRd,KSet Bit(s) in RegisterRd ← Rd v KZ,N,V1
CBRRd,KClear Bit(s) in RegisterRd ← Rd • (0xFF - K)Z,N,V1
INCRdIncrementRd ← Rd + 1Z,N,V1
DECRdDecrementRd ← Rd − 1 Z,N,V1
TSTRdTest for Zero or MinusRd ← Rd • Rd Z,N,V1
CLRRdClear RegisterRd ← Rd ⊕ RdZ,N,V1
SERRdSet RegisterRd ← 0xFFNone1
BRANCH INSTRUCTIONS
RJMPkRelative JumpPC ← PC + k + 1None2
IJMPIndirect Jump to (Z)PC ← Z None2
RCALLkRelative Subroutine Call PC ← PC + k + 1None3
ICALLIndirect Call to (Z)PC ← ZNone3
RETSubroutine ReturnPC ← STACKNone4
RETIInterrupt ReturnPC ← STACKI4
CPSERd,RrCompare, Skip if Equalif (Rd = Rr) PC ← PC + 2 or 3None1/2/3
CPRd,RrCompareRd − RrZ, N,V,C,H1
CPCRd,RrCompare with CarryRd − Rr − CZ, N,V,C,H1
CPIRd,KCompare Register with ImmediateRd − KZ, N,V,C,H1
SBRCRr, bSkip if Bit in Register Clearedif (Rr(b)=0) PC ← PC + 2 or 3 None1 / 2/3
SBRSRr, bSkip if Bit in Register is Setif (Rr(b)=1) PC ← PC + 2 or 3None1 /2/3
SBICP, bSkip if Bit in I/O Register Clearedif (P(b)=0) PC ← PC + 2 or 3 None1/2/3
SBISP, bSkip if Bit in I/O Register is Setif (P(b)=1) PC ← PC + 2 or 3None1/2/3
BRBSs, kBranch if Status Flag Setif (SREG(s) = 1) then PC←PC+k + 1None1/2
BRBCs, kBranch if Status Flag Clearedif (SREG(s) = 0) then PC←PC+k + 1None1/2
BREQ kBranch if Equal if (Z = 1) then PC ← PC + k + 1None1/2
BRNE kBranch if Not Equalif (Z = 0) then PC ← PC + k + 1None1/2
BRCS kBranch if Carry Setif (C = 1) then PC ← PC + k + 1None1/2
BRCC kBranch if Carry Clearedif (C = 0) then PC ← PC + k + 1None1/2
BRSH kBranch if Same or Higher if (C = 0) then PC ← PC + k + 1None1/2
BRLO kBranch if Lowerif (C = 1) then PC ← PC + k + 1None1/2
BRMI kBranch if Minusif (N = 1) then PC ← PC + k + 1None1/2
BRPL kBranch if Plus if (N = 0) then PC ← PC + k + 1None1/2
BRGE kBranch if Greater or Equal, Signedif (N ⊕ V= 0) then PC ← PC + k + 1None1/2
BRLT kBranch if Less Than Zero, Signedif (N ⊕ V= 1) then PC ← PC + k + 1None1/2
BRHS kBranch if Half Carry Flag Setif (H = 1) then PC ← PC + k + 1None1/2
BRHC kBranch if Half Carry Flag Clearedif (H = 0) then PC ← PC + k + 1None1/2
BRTS kBranch if T Flag Setif (T = 1) then PC ← PC + k + 1None1/2
BRTC kBranch if T Flag Clearedif (T = 0) then PC ← PC + k + 1None1/2
BRVS kBranch if Overflow Flag is Setif (V = 1) then PC ← PC + k + 1None1/2
BRVC kBranch if Overflow Flag is Clearedif (V = 0) then PC ← PC + k + 1None1/2
BRIE kBranch if Interrupt Enabledif ( I = 1) then PC ← PC + k + 1None1/2
BRID kBranch if Interrupt Disabledif ( I = 0) then PC ← PC + k + 1None1/2
BIT AND BIT-TEST INSTRUCTIONS
SBIP,bSet Bit in I/O RegisterI/O(P,b) ← 1None2
CBIP,bClear Bit in I/O RegisterI/O(P,b) ← 0None2
LSLRdLogical Shift LeftRd(n+1) ← Rd(n), Rd(0)
LSRRdLogical Shift RightRd(n) ← Rd(n+1), Rd(7) ← 0Z,C,N,V1
ROLRdRotate Left Through CarryRd(0)←C,Rd(n+1)← Rd(n),C←Rd(7)Z,C,N,V1
← 0Z,C,N,V1
2535HS–AVR–10/07
7
MnemonicsOperandsDescriptionOperationFlags#Clocks
RORRdRotate Right Th rough CarryRd(7)←C,Rd(n)← Rd(n+1),C←Rd(0)Z,C,N,V1
ASRRdArithmetic Shift RightRd(n) ← Rd(n+1), n=0..6Z,C,N,V1
SWAPRdSwap Nibble sRd(3..0)←Rd(7..4),Rd(7..4)←Rd(3..0)None1
BSETsFlag SetSREG(s) ← 1SREG(s)1
BCLRsFlag ClearSREG(s) ← 0 SREG(s)1
BSTRr, bBit Store from Register to TT ← Rr(b)T1
BLDRd, bBit load from T to RegisterRd(b) ← TNone1
SECSet CarryC ← 1C1
CLCClear CarryC ← 0 C1
SENSet Negative FlagN ← 1N1
CLNClear Negative FlagN ← 0 N1
SEZSet Zero FlagZ ← 1Z1
CLZClear Zero FlagZ ← 0 Z1
SEIGloba l Inte rru pt EnableI ← 1I1
CLIGlobal Interrupt DisableI ← 0 I1
SESSet Signed Test FlagS ← 1S1
CLSClear Signed Test FlagS ← 0 S1
SEVSet Twos Complement Overflow.V ← 1V1
CLVClear Twos Complement OverflowV ← 0 V1
SETSet T in SREGT ← 1T1
CLTClear T in SREGT ← 0 T1
SEHSet Half Carry Flag in SREGH ← 1H1
CLHClear Half Carry Flag in SREGH ← 0 H
DATA TRANSFER INSTRUCTIONS
MOVRd, RrMove Between RegistersRd ← RrNone1
MOVWRd, RrCopy Register Word
LDIRd, KLoad ImmediateRd ← KNone1
LDRd, XLoad IndirectRd ← (X)None2
LDRd, X+Load Indirect and Post-Inc.Rd ← (X), X ← X + 1None2
LDRd, - XLoad Indirect and Pre-Dec.X ← X - 1, Rd ← (X)None2
LDRd, YLoad IndirectRd ← (Y)None2
LDRd, Y+Load Indirect and Post-Inc.Rd ← (Y), Y ← Y + 1None2
LDRd, - YLoad Indirect and Pre-Dec.Y ← Y - 1, Rd ← (Y)None2
LDDRd,Y+qLoad Indirect with DisplacementRd ← (Y + q)None2
LDRd, ZLoad Indirect Rd ← (Z)None2
LDRd, Z+Load Indirect and Post-Inc.Rd ← (Z), Z ← Z+1None2
LDRd, -ZLoad Indirect and Pre-Dec.Z ← Z - 1, Rd ← (Z)None2
LDDRd, Z+qLoad Indirect with DisplacementRd ← (Z + q)None2
LDSRd, kLoad Direct from SRAMRd ← (k)None2
STX, RrStore Indirect(X) ← RrNone2
STX+, RrStore Indirect and Post-Inc.(X) ← Rr, X ← X + 1None2
ST- X, RrStore Indirect and Pre-Dec.X ← X - 1, (X) ← RrNone2
STY, RrStore Indirect(Y) ← RrNone2
STY+, RrStore Indirect and Post-Inc.(Y) ← Rr, Y ← Y + 1None2
ST- Y, RrStore Indirect and Pre-Dec.Y ← Y - 1, (Y) ← RrNone2
STDY+q,RrStore Indirect with Displacement(Y + q) ← RrNone2
STZ, RrStore Indirect(Z) ← RrNone2
STZ+, RrStore Indirect and Post-Inc.(Z) ← Rr, Z ← Z + 1None2
ST-Z, RrStore Indirect and Pre-Dec.Z ← Z - 1, (Z) ← RrNone2
STDZ+q,RrStore Indirect with Displacement(Z + q) ← RrNone2
STSk, RrStore Direct to SRAM(k) ← RrNone2
LPMLoad Program MemoryR0 ← (Z)None3
LPMRd, ZLoad Program MemoryRd ← (Z)None3
LPMRd, Z+Load Program Memory and Post-IncRd ← (Z), Z ← Z+1None3
SPMStore Program Memory(z) ← R1:R0None
INRd, PIn PortRd ← PNone1
OUTP, RrOut PortP ← RrNone1
PUSHRrPush Register on StackSTACK ← RrNone2
POPRdPop Register from StackRd ← STACKNone2
MCU CONTROL INSTRUCTIONS
NOPNo OperationNone1
SLEEPSleep(see specific descr. for Sleep function)None1
WDRWatchdog Reset(see specific descr. for WDR/Timer)None1
BREAKBreakFor On-chip Debug OnlyNoneN/A
Notes:1. This device can also be supplied in wafer form. Please contact your local Atmel sales office for detailed ordering information
and minimum quantities.
2. Pb-free packaging alternative, complies to the European Directive for Restriction of Hazardous Substances (RoHS directive). Also Halide free and fully Green
20-pad, 4 x 4 x 0.8 mm Body, Lead Pitch 0.50 mm, Micro Lead Frame Package (MLF)
10-pad, 3 x 3 x 1 mm Body, Lead Pitch 0.50 mm, Micro Lead Frame Package (MLF)
9
Packaging Information
8P3
D1
b3
4 PLCS
Top View
D
e
Side View
1
E
E1
N
c
eA
End View
COMMON DIMENSIONS
(Unit of Measure = inches)
b
b2
A2 A
SYMBOL
A0.2102
A20.1150.1300.195
b0.0140.0180.0225
b20.0450.0600.0706
b30.0300.0390.0456
c0.0080.0100.014
D0.3550.3650.4003
L
D10.0053
E0.3000.3100.3254
E10.2400.2500.2803
e0.100 BSC
eA0.300 BSC4
L0.1150.1300.1502
MIN
NOM
MAX
NOTE
Notes:1. This drawing is for general information only; refer to JEDEC Drawing MS-001, Variation BA for additional information.
10
2. Dimensions A and L are measured with the package seated in JEDEC seating plane Gauge GS-3.
3. D, D1 and E1 dimensions do not include mold Flash or protrusions. Mold Flash or protrusions shall not exceed 0.010 inch.
4. E and eA measured with the leads constrained to be perpendicular to datum.
5. Pointed or rounded lead tips are preferred to ease insertion.
6. b2 and b3 maximum dimensions do not include Dambar protrusions. Dambar protrusions shall not exceed 0.010 (0.25 mm).
Notes: 1. This drawing is for general information only; refer to EIAJ Drawing EDR-7320 for additional information.
2. Mismatch of the upper and lower dies and resin burrs are not included.
3. It is recommended that upper and lower cavities be equal. If they are different, the larger dimension shall be regarded.
4. Determines the true geometric position.
5. Values b,C apply to plated terminal. The standard thickness of the plating layer shall measure between 0.007 to .021 mm.
b
A
SYMBOL
A1
A 1.70 2.16
A1 0.05 0.25
b 0.35 0.48 5
C 0.15 0.35 5
D 5.13 5.35
E1 5.18 5.40 2, 3
E 7.70 8.26
L 0.51 0.85
θ 0° 8°
e 1.27 BSC 4
COMMON DIMENSIONS
(Unit of Measure = mm)
MIN
NOM
MAX
NOTE
4/7/06
2325 Orchard Parkway
R
San Jose, CA 95131
2535HS–AVR–10/07
TITLE
8S2, 8-lead, 0.209" Body, Plastic Small
Outline Package (EIAJ)
DRAWING NO.
8S2D
REV.
11
S8S1
3
Top View
1
2
H
N
e
B
A
D
Side View
SYMBOL
A––1.75
A2
C
L
E
End View
Note:
This drawing is for general information only. Refer to JEDEC Drawing MS-012 for proper dimensions, tolerances, datums, etc.
B––0.51
C––0.25
D––5.00
E––4.00
e1.27 BSC
H––6.20
L––1.27
COMMON DIMENSIONS
(Unit of Measure = mm)
MIN
NOM
MAX
NOTE
12
2325 Orchard Parkway
R
San Jose, CA 95131
ATtiny13
TITLE
8S1, 8-lead (0.150" Wide Body), Plastic Gull Wing
Small Outline (JEDEC SOIC)
DRAWING NO.
8S1A
2535HS–AVR–10/07
10/10/01
REV.
20M1
ATtiny13
D
1
Pin 1 ID
2
3
E
TOP VIEW
D2
1
Pin #1
Notch
(0.20 R)
2
3
E2
b
L
e
BOTTOM VIE W
Reference JEDEC Standard MO-220, Fig. 1 (SAW Singulation) WGGD-5.
Note:
SIDE VIEW
A2
A1
A
0.08
C
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL
A 0.70 0.75 0.80
A1 – 0.01 0.05
A2 0.20 REF
b 0.18 0.23 0.30
D 4.00 BSC
D2 2.45 2.60 2.75
E 4.00 BSC
E2 2.45 2.60 2.75
e0.50 BSC
L 0.35 0.40 0.55
MIN
NOM
MAX
NOTE
2325 Orchard Parkway
R
San Jose, CA 95131
2535HS–AVR–10/07
TITLE
20M1, 20-pad, 4 x 4 x 0.8 mm Body, Lead Pitch 0.50 mm,
2.6 mm Exposed Pad, Micro Lead Frame Package (MLF)
DRAWING NO.
20M1
10/27/04
REV.
A
13
10M1
D
E
E1
Pin 1 ID
y
SIDE VIEW
TOP VIEW
A
D1
L
BOTTOM VIEW
K
1
2
b
e
SYMBOL
A 0.80 0.90 1.00
A1 0.00 0.02 0.05
b 0.18 0.25 0.30
D 2.90 3.00 3.10
D1 1.40 – 1.75
E 2.90 3.00 3.10
E1 2.20 – 2.70
e 0.50
L 0.30 – 0.50
y – – 0.08
K 0.20 ––
A1
COMMON DIMENSIONS
(Unit of Measure = mm)
MIN
NOM
MAX
NOTE
14
Notes: 1. This package conforms to JEDEC reference MO-229C, Variation VEED-5.
2. The terminal #1 ID is a Lasser-marked Feature.
TITLE
2325 Orchard Parkway
R
San Jose, CA 95131
10M1, 10-pad, 3 x 3 x 1.0 mm Body, Lead Pitch 0.50 mm,
1.64 x 2.60 mm Exposed Pad, Micro Lead Frame Package
ATtiny13
DRAWING NO.
10M1
2535HS–AVR–10/07
7/7/06
REV.
A
ATtiny13
ErrataThe revision letter in this section refers to the revision of the ATtiny13 device.
ATtiny13 Rev. D• EEPROM can not be written below 1.9 Volt
1.EEPROM can not be written below 1.9 Volt
Writing the EEPROM at V
Problem Fix/Workaround
Do not write the EEPROM when V
ATtiny13 Rev. B• Wrong values read after Erase Only operation
• High Voltage Serial Programming Flash, EEPROM, Fuse and Lock Bits may fail
• Device may lock for further programming
• debugWIRE communication not blocked by lock-bits
• Watchdog Timer Interrupt disabled
• EEPROM can not be written below 1.9 Volt
1.Wrong values read after Erase Only operation
At supply voltages below 2.7 V, an EEPROM location that is erased by the Erase
Only operation may read as programmed (0x00).
Problem Fix/Workaround
If it is necessary to read an EEPROM location after Erase Only, use an Atomic Write
operation with 0xFF as data in order to erase a location. In any case, the Write Only
operation can be used as intended. Thus no special considerations are needed as
long as the erased location is not read before it is programmed.
below 1.9 volts might fail.
CC
is below 1.9 volts.
CC
2.High Voltage Serial Programming Flash, EEPROM, Fuse and Lock Bits may
fail
Writing to any of these locations and bits may in some occasions fail.
Problem Fix/Workaround
After a writing has been initiated, always observe the RDY/BSY
should fail, rewrite until the RDY/BSY
revision D.
3.Device may lock for further programming
Special combinations of fuse bits will lock the device for further programming effectively turning it into an OTP device. The following combinations of settings/fuse bits
will cause this effect:
–128 kHz internal oscillator (CKSEL[1..0] = 11), shortest start-up time
Avoid the above fuse combinations. Selecting longer start-up time will eliminate the
problem.
verifies a correct writing. This will be fixed in
signal. If the writing
2535HS–AVR–10/07
15
4.debugWIRE communication not blocked by lock-bits
When debugWIRE on-chip debug is enabled (DWEN = 0), the contents of program
memory and EEPROM data memory can be read even if the lock-bits are set to
block further reading of the device.
Problem fix/ Workaround
Do not ship products with on-chip debug of the tiny13 enabled.
5.Watchdog Timer Interrupt disabled
If the watchdog timer interrupt flag is not cleared before a new timeout occurs, the
watchdog will be disabled, and the interrupt flag will automatically be cleared. This is
only applicable in interrupt only mode. If the Watchdog is configured to reset the
device in the watchdog time-out following an interrupt, the device works correctly.
Problem fix / Workaround
Make sure there is enough time to always service the first timeout event before a
new watchdog timeout occurs. This is done by selecting a long enough time-out
period.
6.EEPROM can not be written below 1.9 Volt
Writing the EEPROM at V
Problem Fix/Workaround
Do not write the EEPROM when V
below 1.9 volts might fail.
CC
is below 1.9 volts.
CC
ATtiny13 Rev. ARevision A has not been sampled.
16
ATtiny13
2535HS–AVR–10/07
ATtiny13
Datasheet Revision
History
Changes from Rev.
2535G-01/07 to Rev.
2535H-10/07
Please note that the referring page numbers in this section are referring to this document. The referring revision in this section are referring to the document revision.
1.Updated Features o n page 1.
2.Updated Pin Configurations on page 2.
3.Added Data Retention on page 4.
4.Updated Assembly Code Exam ple
5.Updated Table 21 in Alternate Functions of Port B on page 51.
6.Updated Bit 5 description in General Interrupt Mask Register – GIMSK on
page 56.
7.Updated ADC Voltage Reference on page 87.
8.Updated Calibration Byte on page 106.
9.Updated Read Calibration Byte on page 110.
10.Updated Table 51 in Serial Programming Characteristics on page 111.
11.Updated Algorithm in Enter High-voltage Serial Programming Mode on
page 113.
12.Updated Read Calibration Byte on page 118.
13.Updated values in External Clock Drive on page 122.
14.Updated Ordering Information on page 9.
15.Updated Packaging Information on page 10.
(1)
on page 37.
Changes from Rev.
2535F-04/06 to Rev.
2535G-01/07
Changes from Rev.
2535E-10/04 to Rev.
2535F-04/06
Changes from Rev.
2535D-04/04 to Rev.
2535E-10/04
1.Removed Preliminary.
2.Updated Table 12 on page 31, Table 16 on page 39,Table 51 on page 111.
3.Removed Note from Table 15 on pag e 35.
4.Updated Bit 6 – ACBG: An alog Comparator Bandgap Select on page 78.
5.Updated Prescaling and Conversion Timing on page 83.
6.Updated Figure 56 on page 111.
7.Updated DC Characteristics on page 120.
8.Updated Ordering Information on page 9.
9.Updated Packaging Information on page 10.
1.Revision not published.
1.Bits EEMWE/EEWE changed to EEMPE/EEPE in document.
2.Updated Pinout ATtiny13 on page 2.
3.Updated “Write Fuse Low Bit s” in Ta ble 55 o n page 117 , Ta ble 57 on page
122.
2.Added Pin Change Interrupt Timing on page 54.
4.Updated General Interrupt Mask Register – GIMSK on page 56.
5.Updated Pin Change Mask Register – PCMSK on page 57.
6.Updated item 4 in Serial Programming Algorithm on page 108.
2535HS–AVR–10/07
17
Changes from Rev.
2535C-02/04 to Rev.
2535D-04/04
Changes from Rev.
2535B-01/04 to Rev.
2535C-02/04
7.Updated Enter High-voltage Serial Programming Mode on page 113.
8.Updated DC Characteristics on page 120.
9.Updated Typical Characteristics on page 125.
10.Updated Ordering Information on page 9.
11.Updated Packaging Information on page 10.
12.Updated Errata on page 15.
1.Maximum Speed Grades changed
- 12MHz to 10MHz
- 24MHz to 20MHz
2.Updated Serial Programming Instruction Set on page 110.
3.Updated Maximum Speed vs. V
4.Updated Ordering Information on page 9
1.C-code examples updated to use legal IAR syntax.
2.Replaced occurrences of WDIF with WDTIF and WDIE with WDTIE.
3.Updated Stack Pointer on page 9.
4.Updated Calibrated Internal RC Oscillator on page 23.
5.Updated Oscillator Calibration Register – OSCCAL on page 23.
6.Updated typo in introduction on Watchdog Timer on page 36.
7.Updated ADC Conversion Time on page 85.
8.Updated Serial Downloading on page 107.
9.Updated Electrical Characteristics on page 120.
10.Updated Ordering Information on page 9.
11.Removed rev. C from Errata on page 15.
on page 123
CC
Changes from Rev.
2535A-06/03 to Rev.
2535B-01/04
18
ATtiny13
1.Updated Figure 2 on page 3.
2.Updated Table 12 on page 31, Table 17 on page 41, Table 37 on page 92
and Table 57 on page 122.
3.Updated Calibrated Internal RC Oscillator on page 23.
4.Updated the whole Watchdog Timer on page 36.
5.Updated Figure 54 on page 10 7 and Figure 57 on page 112.
6.Updated registers MCU Control Register – MCUCR on page 51,
Timer/Counter Control Register B – TCCR0B on page 72 and Digital Input
Disable Register 0 – DIDR0 on page 79.
7.Updated Absolute Maximum Ratings and DC Characteristics in Electrical
Characteristics on page 120.
8.Added Maximum Speed vs. V
9.Updated ADC Characteristics on page 124.
10.Updated Typical Characteristics on page 125.
11.Updated Ordering Information on page 9.
12.Updated Packaging Information on page 10.
13.Updated Errata on page 15.
14.Changed instances of EEAR to EEARL.
on page 123
CC
2535HS–AVR–10/07
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