Analog Devices SW06GP, SW06GS, SW06FQ, SW06BRC, SW06BQ Datasheet

Quad SPST JFET

a

FEATURES
Two Normally Open and Two Normally Closed SPST

Switches with Disable

Switches Can Be Easily Configured as a Dual SPDT or

a DPDT
Highly Resistant to Static Discharge Destruction
Higher Resistance to Radiation than Analog Switches
Designed with MOS Devices
Guaranteed R
Guaranteed Switching Speeds

= 500 ns max

T

ON

T

= 400 ns max

OFF

Guaranteed Break-Before-Make Switching
Low “ON” Resistance: 80 V max
Low R

Variation from Analog Input Voltage: 5%

ON

Low Total Harmonic Distortion: 0.01%
Low Leakage Currents at High Temperature

= +1258C: 100 nA max

T

A

= +858C: 30 nA max

T

A

Digital Inputs TTL/CMOS Compatible and Independent

of V+
Improved Specifications and Pin Compatible to

LF-11333/13333
Dual or Single Power Supply Operation
Available in Die Form

Matching: 10% max

ON

Analog Switch

FUNCTIONAL BLOCK DIAGRAM

V+

12

1

IN 1

IN 2

IN 3

IN 4

DIS

8

9

16

13

4

GND

LEVEL

SHIFT

5

V–

SW06

3

S1

2

D1

6

S2

7

D2

11

S3

10

D3

14

S4

15

D4

GENERAL DESCRIPTION

The SW06 is a four channel single-pole, single-throw analog
switch that employs both bipolar and ion-implanted FET
devices. The SW06 FET switches use bipolar digital logic inputs
which are more resistant to static electricity than CMOS devices.
Ruggedness and reliability are inherent in the SW06 design and
construction technology.

Increased reliability is complemented by excellent electrical
specifications. Potential error sources are reduced by minimizing
“ON” resistance and controlling leakage currents at high tem­peratures. The switching FET exhibits minimal R

variation

ON

over a 20 V analog signal range and with power supply voltage
changes. Operation from a single positive power supply voltage
is possible. With V+ = 36 V, V– = 0 V, the analog signal range
will extend from ground to +32 V.

PNP logic inputs are TTL and CMOS compatible to allow the
SW06 to upgrade existing designs. The logic “0” and logic “1”
input currents are at microampere levels reducing loading on
CMOS and TTL logic.

REV. A

Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] Fax: [phone]

SW06–SPECIFICA TIONS

ELECTRICAL CHARACTERISTICS

(@ V+ = +15 V, V– = –15 V and TA = +258C, unless otherwise noted)

SW06B SW06F SW06G

Parameter Symbol Conditions Min Typ Max Min Typ Max Min Typ Max Units

“ON” RESISTANCE R

ON

VS = 0 V, IS = 1 mA 60 80 60 100 100 150 Ω

VS = ±10 V, IS = 1 mA 65 80 65 100 100 150
RON MATCH BETWEEN SWITCHES RON Match VS = 0 V, IS = 100 µA
ANALOG VOLTAGE RANGE V

ANALOG CURRENT RANGE I
∆RON VS. APPLIED VOLTAGE ∆R

A

IS = 1 mA

IS = 1 mA

A

ON

VS = ±10 V 10 15 7 12 5 10 mA

–10 V ≤ VS ≤ 10 V, IS = 1.0 mA 5 15 10 20 10 20 %

2
2

SOURCE CURRENT IN

“OFF” CONDITION I

S(OFF)

VS = 10 V, VD = –10 V
DRAIN CURRENT IN

“OFF” CONDITION I

SOURCE CURRENT IN I

“ON” CONDITION I
LOGICAL “1” INPUT VOLTAGE V
LOGICAL “0” INPUT VOLTAGE V
LOGICAL “1” INPUT CURRENT I
LOGICAL “0” INPUT I
TURN-ON TIME t

D(OFF)

S(ON)+
D(ON)

INH

INL

INH

INL

ON

VS = 10 V, VD = –10 V
VS = VD = ±10 V

Full Temperature Range
Full Temperature Range
VIN = 2.0 V to 15.0 V
VIN = 0.8 V 1.5 5.0 1.5 5.0 1.5 10.0 µA
See Switching Time 340 500 340 600 340 700 ns

Test Circuit

4, 6

1

5 10 5 20 20 %

+10 +11 +10 +11 +10 +11 V
–10 –15 –10 –15 –10 –15

3

3

3

2, 4

2, 4

5

0.3 2.0 0.3 2.0 0.3 10 nA

0.3 2.0 0.3 2.0 0.3 10 nA

0.3 2.0 0.3 2.0 0.3 10 nA

2.0 2.0 2.0 V

0.8 0.8 0.8 V
55 10µA

TURN-OFF TIME t

OFF

BREAK-BEFORE-MAKE TIME tON–t
SOURCE CAPACITANCE C
DRAIN CAPACITANCE C
CHANNEL “ON” CAPACITANCE C

“OFF” ISOLATION I

CROSSTALK C

S(OFF)

D(OFF)

D(ON)+

C

S(ON)

SO(OFF)

T

POSITIVE SUPPLY CURRENT I+ All Channels “OFF”, 5.0 6.0 5.0 9.0 6.0 9.0 mA

NEGATIVE SUPPLY CURRENT I– All Channels “OFF”, 3.0 5.0 4.0 7.0 4.0 7.0 mA

GROUND CURRENT I

G

See Switching Time 200 400 200 400 200 500 ns
Test Circuit

Note 7 50 140 50 140 50 140 ns

OFF

VS = 0 V
VS = 0 V
VS = VD = 0 V

VS = 5 V rms, RL = 680 Ω,58 58 58dB
C

= 7 pF, f = 500 kHz

L

VS = 5 V rms, RL = 680 Ω,70 70 70dB
C

= 7 pF, f = 500 kHz

L

DIS = “0”

DIS = “0”
All Channels “ON” or 3.0 4.0 3.0 4.0 3.0 5.0 mA

“OFF”

4, 6

3

3

3

3

3

3

3

3

7.0 7.0 7.0 pF

5.5 5.5 5.5 pF
15 15 15 pF

–2–

REV. A

SW06

(@ V+ = +15 V, V– = –15 V, –558C ≤ TA ≤ +1258C for SW06BQ, –408C ≤ TA ≤ +858C for

ELECTRICAL CHARACTERISTICS

Parameter Symbol Conditions Min Typ Max Min Typ Max Min Typ Max Units

SW06FQ and –408C ≤ TA ≤ +858C for SW06GP/GS, unless otherwise noted)

SW06B SW06F SW06G

TEMPERATURE RANGE T
“ON” RESISTANCE R

A

ON

Operating –55 +125 –25 +85 0 70 °C
VS = 0 V, IS = 1.0 mA 75 110 75 125 75 175 Ω

VS = ±10 V, IS = 1.0 mA 80 110 80 125 80 175
∆RON MATCH BETWEEN SWITCHES RON Match VS = 0 V, IS = 100 µA
ANALOG VOLTAGE RANGE V

ANALOG CURRENT RANGE I
∆RON WITH APPLIED VOLTAGE ∆R

A

IS = 1.0 mA

IS = 1.0 mA

A

ON

VS = ±10 V 7 12 5 11 11 mA

–10 V ≤ VS ≤ 10 V, IS = 1.0 mA 10 12 15 %

2
2

SOURCE CURRENT IN VS = 10 V, VD = –10 V

“OFF” CONDITION I

S(OFF)

TA = Max Operating Temp
DRAIN CURRENT IN VS = 10 V, VD = –10 V

“OFF” CONDITION I

LEAKAGE CURRENT IN I

“ON” CONDITION I
LOGICAL “1” INPUT CURRENT I
LOGICAL “0” INPUT CURRENT I
TURN-ON TIME t

TURN-OFF TIME t

D(OFF)

S(ON)+
D(ON)

INH

INL

ON

OFF

TA = Max Operating Temp

VS = VD = ±10 V 100 30 60 nA
TA = Max Operating Temp

VIN = 2.0 V to 15.0 V
VIN = 0.8 V 4 10 4 10 5 15 µA
See Switching Time 440 900 500 900 1000 ns

Test Circuit
See Switching Time 300 500 330 500 500 ns

Test Circuit

4, 8

4, 8

1

6 20 6 25 10 %

+10 +11 +10 +11 +10 +11 V
–10 –15 –10 –15 –10 –15

3, 9

3, 9

3, 9

5

60 30 60 nA

60 30 60 nA

10 10 15 µA

BREAK-BEFORE-MAKE TIME tON–t

OFF

POSITIVE SUPPLY CURRENT I+ All Channels “OFF,” 9.0 13.5 13.5 mA

NEGATIVE SUPPLY CURRENT I– All Channels “OFF,” 7.5 10.5 10.5 mA

GROUND CURRENT I

G

NOTES

1

VS = 0 V, IS = 100 µA. Specified as a percentage of R

2

Guaranteed by RON and leakage tests. For normal operation maximum analog signal voltages should be restricted to less than (V+) –4 V.

3

Switch being tested ON or OFF as indicated, V

4

Also applies to disable pin.

5

Current tested at VIN = 2.0 V. This is worst case condition.

6

Sample tested.

7

Switch is guaranteed by design to provide break-before-make operation.

8

Guaranteed by design.

9

Parameter tested only at TA = +125°C for military grade device.

= 2.0 V or V

INH

Note 7 70 70 50 n s

DIS = “0”

DIS = “0”
All Channels “ON” or 6.0 7.5 7.5 mA

“OFF”

where: R

AVERAGE

3

3

3

R

+ R

ON1

=

AVERAGE

= 0.8 V, per logic truth table.

INL

ON2

+ R

4

ON3

+ R

ON4

.

Specifications subject to change without notice.

REV. A

–3–

SW06
W AFER TEST LIMITS

(@ V+ = +15 V, V– = –15 V, TA = +258C, unless otherwise noted)

SW06N SW06G

Parameter Symbol Conditions Limit Limit Units

“ON” RESISTANCE R

ON

–10 V ≤ VA ≤ 10 V, IS ≤ 1 mA 80 100 Ω max
RON MATCH BETWEEN SWITCHES RON Match VA = 0 V, IS ≤ 100 µA 15 20 % max
∆RON VS. V

A

∆R

ON

–10 V ≤ VA ≤ 10 V, IS ≤ 1 mA 10 20 % max
POSITIVE SUPPLY CURRENT I+ Note 1 6.0 9.0 mA max
NEGATIVE SUPPLY CURRENT I– Note 1 5.0 7.0 mA max
GROUND CURRENT I
ANALOG VOLTAGE RANGE V
LOGIC “1” INPUT VOLTAGE V
LOGIC “0” INPUT VOLTAGE V
LOGIC “0” INPUT CURRENT I
LOGIC “1” INPUT CURRENT I
ANALOG CURRENT RANGE I

NOTE
Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed
for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing.

G

A

INH

INL

INL

INH

A

Note 1 4.0 4.0 mA max

IS = 1 mA ±10.0 ±10.0 V min

Note 2 2.0 2.0 V min

Note 2 0.8 0.8 V max

0 V ≤ VIN ≤ 0.8 V 5.0 5.0 µA max

2.0 V ≤ VIN ≤ 15 V

3

55µA max

VS = ±10 mV 10 7 mA min

TYPICAL ELECTRICAL CHARACTERISTICS

(@ V+ = +15 V, V– = –15 V, TA = +258C, unless otherwise noted)

SW06N SW06G

Parameter Symbol Conditions Typical Typical Units

“ON” RESISTANCE R
TURN-ON TIME t
TURN-OFF TIME t

ON

ON

OFF

–10 V ≤ VA ≤ 10 V, IS ≤ 1 mA 60 60 Ω

340 340 ns
200 200 ns

DRAIN CURRENT IN

“OFF” CONDITION I
“OFF” ISOLATION I
CROSSTALK C

NOTES

1

Power supply and ground current specified for switch “ON” or “OFF.”

2

Guaranteed by RON and leakage tests.

3

Current tested at VIN = 2.0 V. This is worst case condition.

D(OFF)

SO(OFF)

T

VS = 10 V, VD = –10 V 0.3 0.3 nA
f = 500 kHz, RL = 680 Ω 58 58 dB
f = 500 kHz, RL = 680 Ω 70 70 dB

–4–

REV. A