Analog Devices OP113 213 413 e Datasheet

Low Noise, Low Drift

a

Single-Supply Operational Amplifiers

FEATURES
Single- or Dual-Supply Operation

÷

Low Noise: 4.7 nV/

Hz @ 1 kHz

Wide Bandwidth: 3.4 MHz
Low Offset Voltage: 100 V
Very Low Drift: 0.2 V/C
Unity Gain Stable
No Phase Reversal

APPLICATIONS
Digital Scales
Multimedia
Strain Gages
Battery-Powered Instrumentation
Temperature Transducer Amplifier

GENERAL DESCRIPTION

The OP113 family of single supply operational amplifiers
features both low noise and drift. It has been designed for
systems with internal calibration. Often these processor-based
systems are capable of calibrating corrections for offset and gain,
but they cannot correct for temperature drifts and noise. Opti­mized for these parameters, the OP113 family can be used to
take advantage of superior analog performance combined with
digital correction. Many systems using internal calibration oper­ate from unipolar supplies, usually either 5 V or 12 V. The
OP113 family is designed to operate from single supplies from 4 V
to 36 V, and to maintain its low noise and precision performance.

The OP113 family is unity gain stable and has a typical gain
bandwidth product of 3.4 MHz. Slew rate is in excess of 1 V/ms.
Noise density is a very low 4.7 nV/÷Hz, and noise in the 0.1 Hz to
10 Hz band is 120 nV p-p. Input offset voltage is guaranteed
and offset drift is guaranteed to be less than 0.8 mV/∞C. Input
common-mode range includes the negative supply and to within
1 V of the positive supply over the full supply range. Phase reversal
protection is designed into the OP113 family for cases where
input voltage range is exceeded. Output voltage swings also include
the negative supply and go to within 1 V of the positive rail. The
output is capable of sinking and sourcing current throughout
its range and is specified with 600 W loads.

Digital scales and other strain gage applications benefit from the
very low noise and low drift of the OP113 family. Other applica­tions include use as a buffer or amplifier for both A/D and D/A
sigma-delta converters. Often these converters have high resolu­tions requiring the lowest noise amplifier to utilize their full
potential. Many of these converters operate in either single supply
or low supply voltage systems, and attaining the greater signal
swing possible increases system performance.

OP113/OP213/OP413

PIN CONNECTIONS

8-Lead Narrow-Body SO 8-Lead Plastic DIP

NULL

NULL
–IN A
+IN A

1

OP113

V–

4

NC = NO CONNECT

NC

8

V+
OUT A
NULL

5

8-Lead Narrow-Body SO

OUT A

–IN A
+IN A

1

8

V+

OP213

V–

4

OUT B
–IN B

5

+IN B

14-Lead Plastic DIP

1

OUT A

2

–IN A

+IN A

3

V+ V–
+IN B

–IN B

OUT B

OP413

4

5
6

7

14
13

12

11

10

9

8

OUT D
–IN D

+IN D

+IN C

–IN C

OUT C

1

–IN A

2

+IN A

3

V–

4

OP113

NC = NO CONNECT

8-Lead Plastic DIP

OUT A

1

–IN A

2

+IN A

3

V–

4

OP213

16-Lead Wide-Body SO

OUT A

–IN A

+IN A

+IN B
–IN B

OUT B

116

V+

NC

OP413

89

NC = NO CONNECT

The OP113 family is specified for single 5 V and dual ±15 V
operation over the XIND—extended industrial (–40∞C to +85∞C)
temperature range. They are available in plastic and SOIC
surface mount packages.

8

7

6

5

5

8

7

6

NC

V+

OUT A

NULL

V+

OUT B

–IN B

+IN B

OUT D
–IN D
+IN D
V–
+IN C
–IN C
OUT C
NC

REV. E

Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] www.analog.com
Fax: [phone] © Analog Devices, Inc., 2002

OP113/OP213/OP413–SPECIFICA TIONS

ELECTRICAL CHARACTERISTICS

(@ VS = 15.0 V, TA = 25C unless otherwise noted.

E Grade F Grade

Parameter Symbol Conditions Min Typ Max Min Typ Max Unit

INPUT CHARACTERISTICS

Offset Voltage V

OS

OP113 75 150 mV
–40∞C £ T

£ +85∞C 125 225 mV

A

OP213 100 250 mV
–40∞C £ T

£ +85∞C 150 325 mV

A

OP413 125 275 mV

Input Bias Current I

B

VCM = 0 V, 240 600 600 nA
–40∞C £ T

–40∞C £ T

Input Offset Current I

OS

VCM = 0 V
–40∞C £ T

Input Voltage Range V

CM

Common-Mode Rejection CMR –15 V £ V

–15 V £ V
–40∞C £ T

Large Signal Voltage Gain A

VO

OP113, OP213,
R

= 600 W,

L

–40∞C £ T
OP413, R
–40∞C £ T

= 2 kW,

R

L

Long-Term Offset Voltage
Offset Voltage Drift

2

1

V

OS

DVOS/DTNote 2 0.2 0.8 1.5 mV/∞C

–40∞C £ T
Note 1 150 300 mV

£ +85∞C 175 350 mV

A

£ +85∞C 700 700 nA

A

£ +85∞C5050nA

A

–15 +14 –15 +14 V

£ +14 V 100 116 96 dB

CM

£ +14 V,

CM

£ +85∞C97116 94 dB

A

£ +85∞C12.4 1 V/mV

A

= 1 kW,

L

£ +85∞C12.4 1 V/mV

A

£ +85∞C28 2 V/mV

A

OUTPUT
CHARACTERISTICS

Output Voltage Swing High V

Output Voltage Swing Low V

Short Circuit Limit I

OH

OL

SC

RL = 2 kW 14 14 V
R

= 2 kW,

L

–40∞C £ T

£ +85∞C 13.9 13.9 V

A

RL = 2 kW –14.5 –14.5 V
R

= 2 kW,

L

–40∞C £ T

£ +85∞C –14.5 –14.5 V

A

±40 ±40 mA

POWER SUPPLY

Power Supply Rejection Ratio PSRR V

Supply Current/Amplifier I

Supply Voltage Range V

SY

S

= ±2 V to ± 18 V 103 120 100 dB

S

= ±2 V to ± 18 V

V

S

–40∞C £ T
V

OUT

= ±18 V 3 3 mA

V

S

–40∞C £ T

£ +85∞C 100 120 97 dB

A

= 0 V, RL = •,

£ +85∞C 3.8 3.8 mA

A

4 ±18 4 ±18 V

AUDIO PERFORMANCE

THD + Noise V

= 3 V rms, RL = 2 kW

IN

f = 1 kHz, 0.0009 0.0009 %

Voltage Noise Density e

n

f = 10 Hz 9 9 nV/÷Hz
f = 1 kHz 4.7 4.7 nV/÷Hz

Current Noise Density i

n

f = 1 kHz 0.4 0.4 pA/÷Hz

Voltage Noise en p-p 0.1 Hz to 10 Hz 120 120 nV p-p

DYNAMIC PERFORMANCE

Slew Rate SR R

= 2 kW 0.8 1.2 0.8 1.2 V/ms

L

Gain Bandwidth Product GBP 3.4 3.4 MHz
Channel Separation V

Settling Time t

NOTES

1

Long-term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at 125∞C, with an LTPD of 1.3.

2

Guaranteed specifications, based on characterization data.

Specifications subject to change without notice.

S

= 10 V p-p

OUT

R

= 2 kW, f = 1 kHz 105 105 dB

L

to 0.01%, 0 V to 10 V Step 9 9 ms

–2–

REV. E

OP113/OP213/OP413

ELECTRICAL CHARACTERISTICS

(@ VS = 5.0 V, TA = 25C unless otherwise noted.)

E Grade F Grade

Parameter Symbol Conditions Min Typ Max Min Typ Max Unit

INPUT CHARACTERISTICS

Offset Voltage V

OS

OP113 125 175 mV
–40∞C £ T

£ +85∞C 175 250 mV

A

OP213 150 300 mV
–40∞C £ T

£ +85∞C 225 375 mV

A

OP413 175 325 mV

Input Bias Current I

B

VCM = 0 V, V
–40∞C £ T

–40∞C £ T

Input Offset Current I

OS

VCM = 0 V, V
–40∞C £ T

Input Voltage Range V

CM

Common-Mode Rejection CMR 0 V £ V

0 V £ V
–40∞C £ T

Large Signal Voltage Gain A

VO

OP113, OP213,
R

= 600 W, 2 kW

L

0.01 V £ V
OP413, R

Long-Term Offset Voltage
Offset Voltage Drift

2

1

V

OS

DVOS/DT Note 2 0.2 1.0 1.5 mV/∞C

0.01 V £ V
Note 1 200 350 mV

£ +85∞C 250 400 mV

A

= 2 300 650 650 nA

OUT

£ +85∞C 750 750 nA

A

= 2

OUT

£ +85∞C5050nA

A

0+4 +4V

£ 4 V 93 106 90 dB

CM

£ 4 V,

CM

£ +85∞C90 87 dB

A

£ 3.9 V 2 2 V/mV

OUT

= 600, 2 kW,

L

£ 3.9 V 1 1 V/mV

OUT

OUTPUT
CHARACTERISTICS

Output Voltage Swing High V

Output Voltage Swing Low V

Short Circuit Limit I

OH

OL

SC

RL = 600 kW 4.0 4.0 V
R

= 100 kW, 4.1 4.1 V

L

–40∞C £ T

= 600 W, 3.9 3.9 V

R

L

–40∞C £ T

£ +85∞C

A

£ +85∞C

A

RL = 600 W,88mV
–40∞C £ T
R

= 100 kW,88mV

L

–40∞C £ T

£ +85∞C

A

£ +85∞C

A

±30 ±30 mA

POWER SUPPLY

Supply Current I

SY

I

SY

V

= 2.0 V, No Load 1.6 2.7 2.7 mA

OUT

–40∞C £ TA £ +85∞C 3.0 3.0 mA

AUDIO PERFORMANCE

THD + Noise V
Voltage Noise Density e

n

= 0 dBu, f = 1 kHz 0.001 0.001 %

OUT

f = 10 Hz 9 9 nV/÷Hz
f = 1 kHz 4.7 4.7 nV/÷Hz

Current Noise Density i

n

f = 1 kHz 0.45 0.45 pA/÷Hz

Voltage Noise en p-p 0.1 Hz to 10 Hz 120 120 nV p-p

DYNAMIC PERFORMANCE

Slew Rate SR R

= 2 kW 0.6 0.9 0.6 V/ms

L

Gain Bandwidth Product GBP 3.5 3.5 MHz
Settling Time t

NOTES

1

Long-term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at 125∞C, with an LTPD of 1.3.

2

Guaranteed specifications, based on characterization data.

Specifications subject to change without notice.

S

to 0.01%, 2 V Step 5.8 5.8 ms

REV. E

–3–

OP113/OP213/OP413

WARNING!

ESD SENSITIVE DEVICE

ABSOLUTE MAXIMUM RATINGS

1

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±18 V

Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 18 V

Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . ±10 V

Output Short-Circuit Duration to GND . . . . . . . . . Indefinite

Storage Temperature Range

P, S Packages . . . . . . . . . . . . . . . . . . . . . . –65∞C to +150∞C

Operating Temperature Range

OP113/OP213/OP413E, F . . . . . . . . . . . . . –40∞C to +85∞C

Junction Temperature Range

P, S Packages . . . . . . . . . . . . . . . . . . . . . . –65∞C to +150∞C

Lead Temperature Range (Soldering, 60 sec) . . . . . . . 300∞C

Package Type 

2

JA



JC

Unit

8-Lead Plastic DIP (P) 103 43 ∞C/W
8-Lead SOIC (S) 158 43 ∞C/W

Temperature Package Package

Model Range Description Options

OP113ES –40∞C to +85∞C 8-Lead SOIC SO-8
OP113FP* –40∞C to +85∞C 8-Lead Plastic DIP N-8
OP113FS –40∞C to +85∞C 8-Lead SOIC SO-8

OP213EP* –40∞C to +85∞C 8-Lead Plastic DIP N-8
OP213ES –40∞C to +85∞C 8-Lead SOIC SO-8
OP213FP –40∞C to +85∞C 8-Lead Plastic DIP N-8
OP213FS –40∞C to +85∞C 8-Lead SOIC SO-8

OP413ES –40∞C to +85∞C 16-Lead Wide SOIC R-16
OP413FP* –40∞C to +85∞C14-Lead Plastic DIP N-14
OP413FS –40∞C to +85∞C 16-Lead Wide SOIC R-16

*Not for new designs; obsolete April 2002.

ORDERING GUIDE

14-Lead Plastic DIP (P) 83 39 ∞C/W
16-Lead SOIC (S) 92 27 ∞C/W

NOTES

1

Absolute maximum ratings apply to both DICE and packaged parts, unless

otherwise noted.

2

qJA is specified for the worst-case conditions, i.e., qJA is specified for device in

socket for cerdip, P-DIP, and LCC packages; qJA is specified for device sol­dered in circuit board for SOIC package.

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the OP113/OP213/OP413 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions
are recommended to avoid performance degradation or loss of functionality.

–4–

REV. E

Typical Performance Characteristics–

TCVOS – V

UNITS

600

0

1.0

300

100

0.1

200

0

500

400

0.90.70.60.5 0.80.40.30.2

VS = 15V
–40

C T

A

+85C

1220  OP AMPS
PLASTIC PKG

OP113/OP213/OP413

100

VS = 15V

= 25C

T

A

80

400  OP AMPS
PLASTIC PKG

60

UNITS

40

20

0

–40

–50

INPUT OFFSET VOLTAGE, V

– V

OS

403020100–10–20–30

TPC 1a. OP113 Input Offset (VOS) Distribution

±

15 V

@

500

VS = 15V

= 25C

T

400

300

A

896 (PLASTIC)  OP AMPS

150

VS = 15V
–40



120

90

UNITS

60

C TA +85C

400  OP AMPS
PLASTIC PKG

30

50

0

0.1

0

TCVOS – V

1.0

0.90.80.70.60.50.40.30.2

TPC 2a. OP113 Temperature Drift (TCVOS)
Distribution @

500

400

300

±

15 V

VS = 15V
–40



C TA +85C

896 (PLASTIC)  OP AMPS

UNITS

200

100

0

–80

–100

INPUT OFFSET VOLTAGE, VOS – V

806040200–20–40–60

TPC 1b. OP213 Input Offset (VOS) Distribution
@

±

15 V

500

VS = 15V

= 25C

T

A

400

1220  OP AMPS
PLASTIC PKG

300

UNITS

200

100

0

–60

–40

INPUT OFFSET VOLTAGE, VOS – V

120100806040200–20

100

140

UNITS

200

100

0

0.1

0

TCVOS – V

TPC 2b. OP213 Temperature Drift (TCVOS)

±

Distribution @

15 V

1.0

0.90.80.70.60.50.40.30.2

TPC 1c. OP413 Input Offset (VOS) Distribution
@

±

15 V

REV. E

–5–

TPC 2c. OP413 Temperature Drift (TCVOS)

±

Distribution @

15 V