Analog Devices OP07CS, OP07CP, OP07EP Datasheet

Ultralow Offset Voltage
8
7
6
5
1
2
3
4
NC = NO CONNECT
V
OS
TRIM
–IN
+IN
V
OS
TRIM
V+
OUT
NCV–
OP07
a
FEATURES Low V Low V Ultra-Stable vs. Time: 1.5 V/Month Max Low Noise: 0.6 V p-p Max Wide Input Voltage Range: 14 V Wide Supply Voltage Range: 3 V to 18 V Fits 725,108A/308A, 741, AD510 Sockets 125C Temperature-Tested Dice
APPLICATIONS Wireless Base Station Control Circuits Optical Network Control Circuits Instrumentation Sensors and Controls
Precision Filters
GENERAL DESCRIPTION
The OP07 has very low input offset voltage (75 µV max for OP07E) which is obtained by trimming at the wafer stage. These low offset voltages generally eliminate any need for external null­ing. The OP07 also features low input bias current (±4 nA for OP07E) and high open-loop gain (200 V/mV for OP07E). The low offsets and high open-loop gain make the OP07 particularly useful for high-gain instrumentation applications.
The wide input voltage range of ±13 V minimum combined with high CMRR of 106 dB (OP07E) and high input impedace pro­vides high accuracy in the noninverting circuit configuration. Excellent linearity and gain accuracy can be maintained even at
: 75 V Max
OS
Drift: 1.3 V/C Max
OS
Thermocouples RTDs Strain Bridges Shunt Current Measurements
Operational Amplifiers
OP07
PIN CONNECTIONS
Epoxy Mini-Dip (P-Suffix)
8-Pin SO (S-Suffix)
high closed-loop gains. Stability of offsets and gain with time or variations in temperature is excellent. The accuracy and stability of the OP07, even at high gain, combined with the freedom from external nulling have made the OP07 an industry standard for instrumentation applications.
The OP07 is available in two standard performance grades. The OP07E is specified for operation over the 0°C to 70°C range, and OP07C over the –40°C to +85°C temperature range.
The OP07 is available in epoxy 8-lead Mini-DIP and 8-lead SOIC. It is a direct replacement for 725,108A, and OP05 amplifiers; 741-types may be directly replaced by removing the 741’s nulling potentiometer. For improved specifications, see the OP177 or OP1177. For ceramic DIP and TO-99 packages and standard micro circuit (SMD) versions, see the OP77.
Figure 1. Simplified Schematic
REV. A
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OP07–SPECIFICATIONS
OP07E ELECTRICAL CHARACTERISTICS
(VS = 15 V, TA = 25C, unless otherwise noted.)
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Input Offset Voltage Long-Term V Input Offset Current I Input Bias Current I Input Noise Voltage e Input Noise Voltage Density e
Input Noise Current I Input Noise Current Density I
Input Resistance—Differential Mode Input Resistance—Common-Mode R
Stability
OS
1
2
V
OS
30 75 µV
VOS/Time 0.3 1.5 µV/Mo
OS
B
p-p 0.1 Hz to 10 Hz
n
n
p-p 14 30 pA p-p
n
n
4
R
IN
INCM
fO = 10 Hz 10.3 18.0 nVHz f
= 100 Hz
O
f
= 1 kHz 9.6 11.0 nVHz
O
fO = 10 Hz 0.32 0.80 pAHz f
= 100 Hz
O
= 1 kHz 0.12 0.17 pAHz
f
O
3
3
3
15 50 m
0.5 3.8 nA ±1.2 ±4.0 nA
0.35 0.6 µV p-p
10.0 13.0 nVHz
0.14 0.23 pAHz
160 G
Input Voltage Range IVR ±13 ± 14 V Common-Mode Rejection Ratio CMRR V Power Supply Rejection Ratio PSRR V Large-Signal Voltage Gain A
VO
= ±13 V 106 123 dB
CM
= ±3 V to ±18 V 5 20 µV/V
S
RL 2 k, VO = ±10 V 200 500 V/mV R
500 , VO = ±0.5 V,
L
VS = ±3 V
4
150 400 V/mV
OUTPUT CHARACTERISTICS
Output Voltage Swing V
O
RL 10 kΩ±12.5 ±13.0 V
2 kΩ±12.0 ±12.8 V
R
L
RL 1 kΩ±10.5 ±12.0 V
DYNAMIC PERFORMANCE
Slew Rate SR RL 2 k Closed-Loop Bandwidth BW A Closed-Loop Output Resistance R Power Consumption P
O
d
VOL
VO = 0, IO = 0 60 VS = ±15 V, No Load 75 120 mW V
S
= 1
3
5
0.1 0.3 V/µs
0.4 0.6 MHz
= ±13 V, No Load 4 6 mW
Offset Adjustment Range RP = 20 kΩ±4mV
NOTES
1
Input offset voltage measurements are performed by automated test equipment approximately 0.5 seconds after application of power.
2
Long-term input offset voltage stability refers to the averaged trend time of VOS vs. Time over extended periods after the first 30 days of operation. Excluding the ini-
tial hour of operation, changes in VOS during the first 30 operating days are typically 2.5 µV refer to the typical performance curves. Parameter is sample tested.
3
Sample tested.
4
Guaranteed by design.
5
Guaranteed but not tested.
Specifications subject to change without notice.
–2–
REV. A
OP07
OP07C ELECTRICAL CHARACTERISTICS
(VS = 15 V, TA = 25C, unless otherwise noted.)
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Input Offset Voltage Long-Term V Input Offset Current I Input Bias Current I Input Noise Voltage e Input Noise Voltage Density e
Input Noise Current I Input Noise Current Density I
Input Resistance- Differential Mode Input Resistance- Common-Mode R
Stability
OS
1
2
V
OS
60 150 µV
VOS/Time 0.4 2.0 µV/Mo
OS
B
p-p 0.1 Hz to 10 Hz
n
n
p-p 15 35 pA p-p
n
n
4
R
IN
INCM
fO = 10 Hz 10.5 20.0 nVHz f
= 100 Hz
O
= 1 kHz 9.8 11.5 nVHz
f
O
fO = 10 Hz 0.35 0.90 pAHz
= 100 Hz
f
O
= 1 kHz 0.13 0.18 pAHz
f
O
3
3
3
833 m
0.8 6.0 nA ±1.8 ±7.0 nA
0.38 0.65 µV p-p
10.2 13.5 nVHz
0.15 0.27 pAHz
120 G
Input Voltage Range IVR ±13 ± 14 V Common-Mode Rejection Ratio CMRR V Power Supply Rejection Ratio PSRR V Large-Signal Voltage Gain A
VO
= ±13 V 100 120 dB
CM
= ±3 V to ±18 V 7 32 µV/V
S
RL 2 k, VO = ±10 V 120 400 V/mV R
500 , VO = ±0.5 V,
L
VS = ±3 V
4
100 400 V/mV
OUTPUT CHARACTERISTICS
Output Voltage Swing V
O
RL 10 kΩ±12.0 ±13.0 V R
2 kΩ±11.5 ±12.8 V
L
RL 1 kΩ±12.0 V
DYNAMIC PERFORMANCE
Slew Rate SR RL 2 k Closed-Loop Bandwidth BW A Closed-Loop Output Resistance R Power Consumption P
O
d
VOL
VO = 0, IO = 0 60 VS = ±15 V, No Load 80 150 mW V
S
= 1
3
5
0.1 0.3 V/µs
0.4 0.6 MHz
= ±13 V, No Load 4 8 mW
Offset Adjustment Range RP = 20 kΩ±4mV
NOTES
1
Input offset voltage measurements are performed by automated test equipment approximately 0.5 seconds after application of power.
2
Long-term input offset voltage stability refers to the averaged trend time of VOS vs. Time over extended periods after the first 30 days of operation. Excluding the ini-
tial hour of operation, changes in VOS during the first 30 operating days are typically 2.5 µV refer to the typical performance curves. Parameter is sample tested.
3
Sample tested.
4
Guaranteed by design.
5
Guaranteed but not tested.
Specifications subject to change without notice.
REV. A
–3–
OP07–SPECIFICATIONS
OP07E ELECTRICAL CHARACTERISTICS
(VS = 15 V, 0C TA 70C, unless otherwise noted.)
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Input Offset Voltage Voltage Drift without External Trim Voltage Drift with External Trim Input Offset Current I Input Offset Current Drift TCI Input Bias Current I Input Bias Current Drift TCI
1
V
OS
2
TCV TCV
OS
B
OS
OSN
OS
B
RP = 20 k 0.3 1.3 µV/°C
3
45 130 µV
0.3 1.3 µV/°C
0.9 5.3 nA 8 35 pA/°C ±1.5 ± 5.5 nA 13 35 pA/°C
Input Voltage Range IVR ±13 ± 13.5 V Common-Mode Rejection Ratio CMRR V Power Supply Rejection Ratio PSRR V Large-Signal Voltage Gain A
VO
= ±13 V 103 123 dB
CM
= ±3 V to ±18 V 7 32 µV/V
S
RL 2 k, VO = ±10 V 180 450 V/mV
OUTPUT CHARACTERISTICS
Output Voltage Swing V
NOTES
1
Input offset voltage measurements are performed by automated test equipment approximately 0.5 seconds after application of power.
2
Guaranteed by design.
3
Sample tested.
Specifications subject to change without notice.
O
RL 10 kΩ±12 ± 12.6 V
(VS = 15 V, 40C TA 85C, unless otherwise noted.)
OP07C ELECTRICAL CHARACTERISTICS
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Input Offset Voltage Voltage Drift without External Trim Voltage Drift with External Trim Input Offset Current I Input Offset Current Drift TCI Input Bias Current I Input Bias Current Drift TCI Input Voltage Range IVR ±13 ± 13.5 V Common-Mode Rejection Ratio CMRR V Power Supply Rejection Ratio PSRR V Large-Signal Voltage Gain A
OUTPUT CHARACTERISTICS
Output Voltage Swing V
NOTES
1
Input offset voltage measurements are performed by automated test equipment approximately 0.5 seconds after application of power.
2
Guaranteed by design.
3
Sample tested.
Specifications subject to change without notice.
1
V
OS
2
TCV TCV
OS
B
VO
O
OS
OSN
OS
B
RP = 20 k 0.4 1.8 µV/°C
= ±13 V 97 120 dB
CM
= ±3 V to ±18 V 10 51 µV/V
S
RL 2 k, VO = ±10 V 100 400 V/mV
RL 10 kΩ±11 ± 12.6 V
3
85 250 µV
0.5 1.8 µV/°C
1.6 8.0 nA 12 50 pA/°C ±2.2 ± 9.0 nA 18 50 pA/°C
–4–
REV. A
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