Analog Devices OP07 c Datasheet

Ultralow Offset Voltage
8
7
6
5
1
2
3
4
NC = NO CONNECT
V
OS
T RIM
–IN
+IN
V
OS
T RIM
V+
OUT
NCV–
OP07
a
FEATURES Low VOS: 75 V Max Low V Ultrastable vs. Time: 1.5 V/Month Max Low Noise: 0.6 V p-p Max Wide Input Voltage Range: 14 V Wide Supply Voltage Range: 3 V to 18 V Fits 725,108A/308A, 741, AD510 Sockets 125C Temperature-Tested Dice
APPLICATIONS Wireless Base Station Control Circuits Optical Network Control Circuits Instrumentation Sensors and Controls
Precision Filters

GENERAL DESCRIPTION

The OP07 has very low input offset voltage (75 µV max for OP07E) that is obtained by trimming at the wafer stage. These low offset voltages generally eliminate any need for external null­ing. The OP07 also features low input bias current (±4 nA for the OP07E) and high open-loop gain (200 V/mV for the OP07E). The low offsets and high open-loop gain make the OP07 particu­larly useful for high gain instrumentation applications.
The wide input voltage range of ±13 V minimum combined with a high CMRR of 106 dB (OP07E) and high input impedance pro­vide high accuracy in the noninverting circuit configuration. Excellent linearity and gain accuracy can be maintained even at
Drift: 1.3 V/C Max
OS
Thermocouples RTDs Strain Bridges Shunt Current Measurements
Operational Amplifier
OP07

PIN CONNECTIONS

8-Lead PDIP (P-Suffix) 8-Lead SOIC (S-Suffix)
high closed-loop gains. Stability of offsets and gain with time or variations in temperature is excellent. The accuracy and stability of the OP07, even at high gain, combined with the freedom from external nulling have made the OP07 an industry standard for instrumentation applications.
The OP07 is available in two standard performance grades. The OP07E is specified for operation over the 0°C to 70°C range, and the OP07C is specified over the –40°C to +85°C temperature range.
The OP07 is available in epoxy 8-lead PDIP and 8-lead SOIC. It is a direct replacement for 725, 108A, and OP05 amplifiers; 741 types may be directly replaced by removing the 741’s nulling potentiometer. For improved specifications, see the OP177 or OP1177. For ceramic DIP and TO-99 packages and standard micro circuit (SMD) versions, see the OP77.
V+
7
*NOTE
R2A AND R2B ARE ELECTRONICALLY ADJUSTED ON CHIP AT FACTORY FOR MINIMUM INPUT OFFSET VOLTAGE.
NONINVERTING
INPUT
3
INVERTING
INPUT
2
R2A*
R1A
Q21
Q22
Q7
Q23
Q24
4
V–
Q5
R3
R4
1
Q3 Q6
Q1
(OPTIONAL
NULL)
Q8
R2B*
8
R1B
Q4
Q2
Q27
Q26
Q25
C1
Q9
Q11
C3
R5
C2
Q13
Q10
Q12
Q17
Q14
Q16
Q15
R7
Q19
R9
OUTPUT
6
R10
Q20
Q18
R8
R6
Figure 1. Simplified Schematic
REV. C
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use, nor for any infringements of patents or other rights of third parties that
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 www.analog.com Fax: 781/326-8703 © 2003 Analog Devices, Inc. All rights reserved.
OP07–SPECIFICATIONS
OP07E ELECTRICAL CHARACTERISTICS
(VS = 15 V, TA = 25C, unless otherwise noted.)
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Input Offset Voltage Long-Term VOS Stability Input Offset Current I Input Bias Current I Input Noise Voltage en p-p 0.1 Hz to 10 Hz Input Noise Voltage Density e
1
2
V
OS
30 75 µV
VOS/Time 0.3 1.5 µV/Mo
OS
B
n
3
fO = 10 Hz 10.3 18.0 nV/Hz
= 100 Hz
f
O
3
0.5 3.8 nA ±1.2 ±4.0 nA
0.35 0.6 µV p-p
10.0 13.0 nV/Hz
fO = 1 kHz 9.6 11.0 nV/Hz Input Noise Current I Input Noise Current Density I
Input Resistance—Differential Mode4R Input Resistance—Common-Mode R
p-p 14 30 pA p-p
n
n
IN
INCM
fO = 10 Hz 0.32 0.80 pA/Hz
= 100 Hz
f
O
= 1 kHz 0.12 0.17 pA/Hz
f
O
3
0.14 0.23 pA/Hz
15 50 M
160 G
Input Voltage Range IVR ±13 ±14 V Common-Mode Rejection Ratio CMRR V Power Supply Rejection Ratio PSRR V Large Signal Voltage Gain A
VO
= ±13 V 106 123 dB
CM
= ±3 V to ± 18 V 5 20 µV/V
S
RL 2 k, VO = ±10 V 200 500 V/mV
500 , VO = ±0.5 V,
R
L
VS = ±3 V
4
150 400 V/mV
OUTPUT CHARACTERISTICS
Output Voltage Swing V
O
RL 10 kΩ±12.5 ±13.0 V
R
2 kΩ±12.0 ±12.8 V
L
RL 1 kΩ±10.5 ±12.0 V
DYNAMIC PERFORMANCE
Slew Rate SR RL 2 k Closed-Loop Bandwidth BW A Closed-Loop Output Resistance R Power Consumption P
O
d
VOL
VO = 0, IO = 0 60
VS = ±15 V, No Load 75 120 mW
V
S
= 1
3
5
0.1 0.3 V/µs
0.4 0.6 MHz
= ±3 V, No Load 4 6 mW
Offset Adjustment Range RP = 20 kΩ±4mV
NOTES
1
Input offset voltage measurements are performed by automated test equipment approximately 0.5 seconds after application of power.
2
Long-term input offset voltage stability refers to the averaged trend time of VOS vs. the time over extended periods after the first 30 days of operation. Excluding the initial hour of operation, changes in VOS during the first 30 operating days are typically 2.5 µV, refer to the typical performance characteristics. Parameter is sample tested.
3
Sample tested.
4
Guaranteed by design.
5
Guaranteed but not tested.
Specifications subject to change without notice.
–2–
REV. C
OP07
OP07C ELECTRICAL CHARACTERISTICS
(VS = 15 V, TA = 25C, unless otherwise noted.)
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Input Offset Voltage Long-Term VOS Stability Input Offset Current I Input Bias Current I Input Noise Voltage en p-p 0.1 Hz to 10 Hz Input Noise Voltage Density e
1
2
V
OS
60 150 µV
VOS/Time 0.4 2.0 µV/Mo
OS
B
3
n
fO = 10 Hz 10.5 20.0 nV/Hz
= 100 Hz
f
O
3
0.8 6.0 nA ±1.8 ±7.0 nA
0.38 0.65 µV p-p
10.2 13.5 nV/Hz
fO = 1 kHz 9.8 11.5 nV/Hz Input Noise Current I Input Noise Current Density I
Input Resistance—Differential Mode4R Input Resistance—Common-Mode R
p-p 15 35 pA p-p
n
n
IN
INCM
fO = 10 Hz 0.35 0.90 pA/Hz
= 100 Hz
f
O
= 1 kHz 0.13 0.18 pA/Hz
f
O
3
0.15 0.27 pA/Hz
833 M
120 G
Input Voltage Range IVR ±13 ±14 V Common-Mode Rejection Ratio CMRR V Power Supply Rejection Ratio PSRR V Large Signal Voltage Gain A
VO
= ±13 V 100 120 dB
CM
= ±3 V to ± 18 V 7 32 µV/V
S
RL 2 k, VO = ±10 V 120 400 V/mV
500 , VO = ±0.5 V,
R
L
VS = ±3 V
4
100 400 V/mV
OUTPUT CHARACTERISTICS
Output Voltage Swing V
O
RL 10 kΩ±12.0 ±13.0 V
R
2 kΩ±11.5 ±12.8 V
L
RL 1 kΩ±12.0 V
DYNAMIC PERFORMANCE
Slew Rate SR RL 2 k Closed-Loop Bandwidth BW A Closed-Loop Output Resistance R Power Consumption P
O
d
VOL
VO = 0, IO = 0 60
VS = ±15 V, No Load 80 150 mW
V
S
= 1
3
5
0.1 0.3 V/µs
0.4 0.6 MHz
= ±3 V, No Load 4 8 mW
Offset Adjustment Range RP = 20 kΩ±4mV
NOTES
1
Input offset voltage measurements are performed by automated test equipment approximately 0.5 seconds after application of power.
2
Long-term input offset voltage stability refers to the averaged trend time of VOS vs. the time over extended periods after the first 30 days of operation. Excluding the initial hour of operation, changes in VOS during the first 30 operating days are typically 2.5 µV, refer to the typical performance characteristics. Parameter is sample tested.
3
Sample tested.
4
Guaranteed by design.
5
Guaranteed but not tested.
Specifications subject to change without notice.
REV. C
–3–
OP07–SPECIFICATIONS
OP07E ELECTRICAL CHARACTERISTICS
(VS = 15 V, 0C TA 70C, unless otherwise noted.)
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Input Offset Voltage Voltage Drift without External Trim2TCV Voltage Drift with External Trim Input Offset Current I Input Offset Current Drift TCI Input Bias Current I Input Bias Current Drift TCI
1
V
OS
TCV
OS
B
OS
OSN
OS
B
RP = 20 k 0.3 1.3 µV/°C
3
45 130 µV
0.3 1.3 µV/°C
0.9 5.3 nA 835pA/°C ±1.5 ±5.5 nA 13 35 pA/°C
Input Voltage Range IVR ±13 ±13.5 V Common-Mode Rejection Ratio CMRR V
= ±13 V 103 123 dB
CM
Power Supply Rejection Ratio PSRR VS = ±3 V to ± 18 V 7 32 µV/V Large Signal Voltage Gain A
VO
RL 2 k, VO = ±10 V 180 450 V/mV
OUTPUT CHARACTERISTICS
Output Voltage Swing V
NOTES
1
Input offset voltage measurements are performed by automated test equipment approximately 0.5 seconds after application of power.
2
Guaranteed by design.
3
Sample tested.
Specifications subject to change without notice.
O
OP07C ELECTRICAL CHARACTERISTICS
RL 10 kΩ±12 ±12.6 V
(VS = 15 V, 40C TA 85C, unless otherwise noted.)
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Input Offset Voltage Voltage Drift without External Trim Voltage Drift with External Trim Input Offset Current I Input Offset Current Drift TCI Input Bias Current I Input Bias Current Drift TCI
1
V
OS
2
TCV TCV
OS
B
OS
OSN
OS
B
RP = 20 k 0.4 1.8 µV/°C
3
85 250 µV
0.5 1.8 µV/°C
1.6 8.0 nA 12 50 pA/°C ±2.2 ±9.0 nA 18 50 pA/°C
Input Voltage Range IVR ±13 ±13.5 V Common-Mode Rejection Ratio CMRR V Power Supply Rejection Ratio PSRR V Large Signal Voltage Gain A
VO
= ±13 V 97 120 dB
CM
= ±3 V to ± 18 V 10 51 µV/V
S
RL 2 k, VO = ±10 V 100 400 V/mV
OUTPUT CHARACTERISTICS
Output Voltage Swing V
NOTES
1
Input offset voltage measurements are performed by automated test equipment approximately 0.5 seconds after application of power.
2
Guaranteed by design.
3
Sample tested.
Specifications subject to change without notice.
O
RL 10 kΩ±11 ±12.6 V
–4–
REV. C
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