Analog Devices AD815 Datasheet

NC

NC

NC

+IN1

–IN1

OUT1

–V

S

+V

S

OUT2

–IN2

+IN2

NC

NC

NC

NC

1

2

3

4

5

6

7

8

9

15

11

12

13

14

10

AD815

TAB IS

+V

S

NC = NO CONNECT

REFER TO PAGE 3 FOR 24-LEAD SOIC PACKAGE

High Output Current

AMP1

+15V

–15V

R

L

120V

110V

499V

V

OUT

=

40Vp-p

V

IN

=

4Vp-p

1/2

AD815

1/2

AD815

G = +10

100V

100V

AMP2

VD =
40Vp-p

1:2

TRANSFORMER

R

1

= 15V

R2 = 15V

499V

a

FEATURES
Flexible Configuration

Differential Input and Output Driver
or Two Single-Ended Drivers

High Output Power

Power Package

26 dBm Differential Line Drive for ADSL Application
40 V p-p Differential Output Voltage, R
500 mA Minimum Output Drive/Amp, R

Thermally Enhanced SOIC

400 mA Minimum Output Drive/Amp, R

Low Distortion

–66 dB @ 1 MHz THD, R

= 200 ⍀, V

L

0.05% and 0.45ⴗ Differential Gain and Phase, R
(6 Back-Terminated Video Loads)

High Speed

120 MHz Bandwidth (–3 dB)
900 V/␮s Differential Slew Rate
70 ns Settling Time to 0.1%

Thermal Shutdown

APPLICATIONS
ADSL, HDSL and VDSL Line Interface Driver
Coil or Transformer Driver
CRT Convergence and Astigmatism Adjustment
Video Distribution Amp
Twisted Pair Cable Driver

PRODUCT DESCRIPTION

The AD815 consists of two high speed amplifiers capable of
supplying a minimum of 500 mA. They are typically configured
as a differential driver enabling an output signal of 40 V p-p on

±15 V supplies. This can be increased further with the use of a

–40

VS = 615V
G = +10

–50

–60

V

OUT

= 40V p-p

= 50 ⍀

L

L

L

= 40 V p-p

OUT

= 5 ⍀

= 10 ⍀

= 25 ⍀

L

Differential Driver

AD815

FUNCTIONAL BLOCK DIAGRAM

15-Lead Through-Hole SIP (Y) and Surface-Mount

DDPAK(VR)

coupling transformer with a greater than 1:1 turns ratio. The

low harmonic distortion of –66 dB @ 1 MHz into 200 Ω

combined with the wide bandwidth and high current drive make
the differential driver ideal for communication applications such
as subscriber line interfaces for ADSL, HDSL and VDSL.

The AD815 differential slew rate of 900 V/µs and high load drive

are suitable for fast dynamic control of coils or transformers,

and the video performance of 0.05% and 0.45° differential gain
and phase into a load of 25 Ω enable up to 12 back-terminated

loads to be driven.

Three package styles are available, and all work over the

industrial temperature range (–40°C to +85°C). Maximum

output power is achieved with the power package available for
through-hole mounting (Y) and surface-mounting (VR). The
24-lead SOIC (RB) is capable of driving 26 dBm for full rate
ADSL with proper heat sinking.

–70

RL = 50V

–80

(DIFFERENTIAL)

–90

–100

TOTAL HARMONIC DISTORTION – dBc

–110

REV. B

Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.

100 10M1k

Total Harmonic Distortion vs. Frequency

10k 100k 1M

FREQUENCY – Hz

RL = 200V
(DIFFERENTIAL)

Subscriber Line Differential Driver

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] World Wide Web Site: http://www.analog.com
Fax: [phone] © Analog Devices, Inc., 1999

AD815–SPECIFICATIONS

(@ TA = +25ⴗC, VS = ⴞ15 V dc, RFB = 1 k⍀ and R

= 100 ⍀ unless otherwise noted)

LOAD

AD815A

Model Conditions V

S

Min Typ Max Units

DYNAMIC PERFORMANCE

Small Signal Bandwidth (–3 dB) G = +1 ±15 100 120 MHz

G = +1 ±5 90 110 MHz

Bandwidth (0.1 dB) G = +2 ±15 40 MHz

G = +2 ±5 10 MHz

Differential Slew Rate V

= 20 V p-p, G = +2 ±15 800 900 V/µs

OUT

Settling Time to 0.1% 10 V Step, G = +2 ±15 70 ns

NOISE/HARMONIC PERFORMANCE

Total Harmonic Distortion f = 1 MHz, R
Input Voltage Noise f = 10
Input Current Noise (+I
Input Current Noise (–I

) f = 10 kHz, G = +2 ±5, ±15 1.8 pA/√Hz

IN

) f = 10 kHz, G = +2 ±5, ±15 19 pA/√Hz

IN

kHz, G = +2 (Single Ended) ±5, ±15 1.85 nV/√Hz

= 200 Ω, V

LOAD

Differential Gain Error NTSC, G = +2, R
Differential Phase Error NTSC, G = +2, R

= 25 Ω±15 0.05 %

LOAD

= 25 Ω±15 0.45 Degrees

LOAD

= 40 V p-p ±15 –66 dBc

OUT

DC PERFORMANCE

Input Offset Voltage ±558mV

±15 10 15 mV

T

MIN

– T

MAX

30 mV

Input Offset Voltage Drift 20 µV/°C
Differential Offset Voltage ±50.52mV

±15 0.5 4 mV

– T

T

MIN

MAX

5mV

Differential Offset Voltage Drift 10 µV/°C
–Input Bias Current ±5, ±15 10 90 µA

T

MIN

– T

MAX

150 µA

+Input Bias Current ±5, ±15 2 5 µA

T

MIN

– T

MAX

5 µA

Differential Input Bias Current ±5, ±15 10 75 µA

– T

T

MIN

MAX

100 µA

Open-Loop Transresistance ±5, ±15 1.0 5.0 MΩ

T

MIN

– T

MAX

0.5 MΩ

INPUT CHARACTERISTICS

Differential Input Resistance +Input ±15 7 MΩ

–Input 15 Ω
Differential Input Capacitance ±15 1.4 pF
Input Common-Mode Voltage Range ±15 13.5 ±V

±53.5±V

Common-Mode Rejection Ratio T
Differential Common-Mode Rejection Ratio T

MIN

MIN

– T
– T

MAX

MAX

±5, ±15 57 65 dB
±5, ±15 80 100 dB

OUTPUT CHARACTERISTICS

Voltage Swing Single Ended, R

= 25 Ω±15 11.0 11.7 ±V

LOAD

±5 1.1 1.8 ±V

= 50 Ω±15 21 23 ±V

LOAD

±15 22.5 24.5 ±V

Output Current

1, 2

VR, Y R

Differential, R

T

– T

MIN

MAX

= 5 Ω±15 500 750 mA

LOAD

±5 350 400 mA

RB-24 R

= 10 Ω±15 400 500 mA

LOAD

Short Circuit Current ±15 1.0 A
Output Resistance ±15 13 Ω

MATCHING CHARACTERISTICS

Crosstalk f = 1 MHz ±15 –65 dB

POWER SUPPLY

Operating Range

3

T

MIN

– T

MAX

±18 V

Quiescent Current ±52330mA

±15 30 40 mA

– T

T

MIN

MAX

±540mA
±15 55 mA

Power Supply Rejection Ratio T

NOTES

1

Output current is limited in the 24-lead SOIC package to the maximum power dissipation. See absolute maximum ratings and derating curves.

2

See Figure 12 for bandwidth, gain, output drive recommended operation range.

3

Observe derating curves for maximum junction temperature.

Specifications subject to change without notice.

MIN

– T

MAX

±5, ±15 –55 –66 dB

REV. B–2–

AD815

AMBIENT TEMPERATURE – 8C

14

7

4

–50 90–40

MAXIMUM POWER DISSIPATION – Watts

–30 –20 –10 10 20 30 40 50 60 70 80

13

8

6
5

11

9

12

10

0

TJ = 1508C

3
2
1
0

AD815 AVR, AY

θ

JA

= 418C/W
(STILL AIR = 0FT/MIN)
NO HEAT SINK

θ

JA

= 528C/W
(STILL AIR = 0 FT/MIN)
NO HEAT SINK

AD815ARB-24

θ

JA

= 168C/W
SOLDERED DOWN TO
COPPER HEAT SINK
(STILL AIR = 0FT/MIN)

AD815 AVR, AY

WARNING!

ESD SENSITIVE DEVICE

ABSOLUTE MAXIMUM RATINGS

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . ±18 V Total

Internal Power Dissipation

2

1

Plastic (Y and VR) . . 3.05 Watts (Observe Derating Curves)
Small Outline (RB) . . 2.4 Watts (Observe Derating Curves)

Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . . ±V

S

Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . ±6 V

Output Short Circuit Duration

. . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves

Can Only Short to Ground

Storage Temperature Range

Y, VR and RB Package . . . . . . . . . . . . . . . –65°C to +125°C

Operating Temperature Range

AD815A . . . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to +85°C

Lead Temperature Range (Soldering, 10 sec) . . . . . . . +300°C

NOTES

1

Stresses above those listed under Absolute Maximum Ratings may cause perma-

nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.

2

Specification is for device in free air with 0 ft/min air flow: 15-Lead Through-Hole

and Surface Mount: θJA = 41°C/W; 24-Lead Surface Mount: θJA = 52°C/W.

PIN CONFIGURATION

24-Lead Thermally-Enhanced SOIC (RB-24)

1

NC

2

NC

3

NC

4

NC

5

THERMAL

HEAT TABS

+V

*

S

+IN1
–IN1

OUT1

–V

*HEAT TABS ARE CONNECTED TO THE POSITIVE SUPPLY.

AD815

6

TOP VIEW

(Not to Scale)

7
8

9
10
11
12

S

NC = NO CONNECT

24
23
22
21
20
19
18
17
16
15
14
13

NC
NC
NC
NC

THERMAL
HEAT TABS
+V

S

+IN2
–IN2
OUT2
+V

S

*

MAXIMUM POWER DISSIPATION

The maximum power that can be safely dissipated by the AD815
is limited by the associated rise in junction temperature. The
maximum safe junction temperature for the plastic encapsulated
parts is determined by the glass transition temperature of the

plastic, about 150°C. Exceeding this limit temporarily may

cause a shift in parametric performance due to a change in the
stresses exerted on the die by the package. Exceeding a junction

temperature of 175°C for an extended period can result in

device failure.

The AD815 has thermal shutdown protection, which guarantees
that the maximum junction temperature of the die remains below a
safe level, even when the output is shorted to ground. Shorting
the output to either power supply will result in device failure.
To ensure proper operation, it is important to observe the
derating curves and refer to the section on power considerations.

It must also be noted that in high (noninverting) gain configurations
(with low values of gain resistor), a high level of input overdrive
can result in a large input error current, which may result in a
significant power dissipation in the input stage. This power
must be included when computing the junction temperature rise
due to total internal power.

Plot of Maximum Power Dissipation vs. Temperature

Model Temperature Range Package Description Package Option

AD815ARB-24 –40°C to +85°C 24-Lead Thermally Enhanced SOIC RB-24
AD815ARB-24-REEL –40°C to +85°C 24-Lead Thermally Enhanced SOIC RB-24
AD815AVR –40°C to +85°C 15-Lead Surface Mount DDPAK VR-15
AD815AY –40°C to +85°C 15-Lead Through-Hole SIP with Staggered Leads and 90° Lead Form Y-15
AD815AYS –40°C to +85°C 15-Lead Through-Hole SIP with Staggered Leads and Straight Lead Form YS-15

AD815-EB Evaluation Board

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD815 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.

REV. B –3–

ORDERING GUIDE

AD815–Typical Performance Characteristics

JUNCTION TEMPERATURE – 8C

–40 100–20020406080

36

34

18

SUPPLY CURRENT – mA

26

24

22

20

30

28

32

VS = 615V

VS = 65V

SUPPLY VOLTAGE – 6Volts

33

30

18

0162

TOTAL SUPPLY CURRENT – mA

468101214

27

24

21

TA = +258C

AD815

20

15

10

5

COMMON-MODE VOLTAGE RANGE – 6Volts

0

0205

SUPPLY VOLTAGE – 6Volts

10 15

Figure 1. Input Common-Mode Voltage Range vs. Supply
Voltage

Figure 4. Total Supply Current vs. Temperature

40

30

NO LOAD

20

10

SINGLE-ENDED OUTPUT VOLTAGE – V p-p

0

02051015

SUPPLY VOLTAGE – 6Volts

Figure 2. Output Voltage Swing vs. Supply Voltage

30

25

20

15

10

5

SINGLE-ENDED OUTPUT VOLTAGE – Volts p-p

0

10 10k100 1k

LOAD RESISTANCE – (Differential – V) (Single-Ended – V/2)

Figure 3. Output Voltage Swing vs. Load Resistance

RL = 50V

(DIFFERENTIAL)
RL = 25V
(SINGLE-ENDED)

VS = 615V

VS = 65V

80

60

40

20

DIFFERENTIAL OUTPUT VOLTAGE – V p-p

0

Figure 5. Total Supply Current vs. Supply Voltage

60

50

40

30

20

10

DIFFERENTIAL OUTPUT VOLTAGE – Volts p-p

0

10

0

–10

–20

–30

–40

–50

INPUT BIAS CURRENT – mA

–60

–70

–80

–40 100–20 0 20 40 60 80

Figure 6. Input Bias Current vs. Temperature

JUNCTION TEMPERATURE – 8C

SIDE A, B

VS = 615V, 65V

VS = 65V

SIDE B

–I

SIDE A

SIDE B

SIDE A

–I

VS = 615V

+I

B

B

B

REV. B–4–

AD815

LOAD CURRENT – Amps

80

0

–60

40

20

–20

–40

60

–2.0 2.0–1.6 –1.2 –0.8 –0.4

0

0.4 0.8 1.2 1.6

VS =
610V

VS =
65V

RTI OFFSET – mV

VS =
615V

TA = 258C

1kV

1kV

R

L

=

5V

V

OUT

1/2
AD815

100V

49.9V

V

IN

f = 0.1Hz

FREQUENCY – Hz

100

30k 300M100k

CLOSED-LOOP OUTPUT RESISTANCE – V

1M 10M 100M

10

1

0.1

0.01

300k 3M 30M

VS = 65V

VS = 615V

FREQUENCY – MHz

40

0

0146

DIFFERENTIAL OUTPUT VOLTAGE – V p-p

10

30

20

10

RL = 50V

RL = 25V

RL = 1V

24 8 12

RL = 100V

TA = 258C
V

S

= ±15V

0

–2

–4

–6

–8

–10

INPUT OFFSET VOLTAGE – mV

–12

–14

–40 100–20

VS = 615V

020406080

JUNCTION TEMPERATURE – 8C

VS = 65V

Figure 7. Input Offset Voltage vs. Temperature

750

VS = 615V

700

650

600

550

SHORT CIRCUIT CURRENT – mA

500

SOURCE

SINK

Figure 10. Thermal Nonlinearity vs. Output Current Drive

450

–60 140–40

Figure 8. Short Circuit Current vs. Temperature

15

TA = 258C

10

R

5

0

RTI OFFSET – mV

–5

–10

–15

REV. B –5–

–20 20–16 –12 –8 –4 0 4 8 12 16

Figure 9. Gain Nonlinearity vs. Output Voltage

–20 0 2 0 40 60 80 100 120

JUNCTION TEMPERATURE – 8C

VS = 610V

= 25V

L

V

VS = 65V

V

f = 0.1Hz

– Volts

OUT

IN

100V

49.9V

1kV

1/2
AD815

1kV

VS = 615V

V

OUT

=

R

L

25V

Figure 11. Closed-Loop Output Resistance vs. Frequency

Figure 12. Large Signal Frequency Response