Analog Devices AD813AR-REEL7, AD813AR-REEL, AD813AR-14, AD813AN, AD813ACHIPS Datasheet

Single Supply, Low Power

a

FEATURES
Low Cost
Three Video Amplifiers in One Package
Optimized for Driving Cables in Video Systems
Excellent Video Specifications (RL = 150 V)

Gain Flatness 0.1 dB to 50 MHz

0.03% Differential Gain Error

0.068 Differential Phase Error

Low Power

Operates on Single +3 V to 615 V Power Supplies

5.5 mA/Amplifier Max Power Supply Current

High Speed

125 MHz Unity Gain Bandwidth (–3 dB)
500 V/ms Slew Rate

High Speed Disable Function per Channel

Turn-Off Time 80 ns

Easy to Use

50 mA Output Current
Output Swing to 1 V of Rails

APPLICATIONS
Video Line Driver
LCD Drivers
Computer Video Plug-In Boards
Ultrasound
RGB Amplifier
CCD Based Systems

PRODUCT DESCRIPTION

The AD813 is a low power, single supply triple video amplifier.
Each of the three current feedback amplifiers has 50 mA of output
current, and is optimized for driving one back-terminated video
load (150 Ω). The AD813 features gain flatness of 0.1 dB to

G = +2
RL = 150V

0.2

0.1
0

–0.1

–0.2

–0.3

NORMALIZED GAIN – dB

–0.4

–0.5

100k

1M 100M10M

FREQUENCY – Hz

Figure 1. Fine Scale Gain Flatness vs. Frequency,

= 150

G = +2, R

Ω

L

REV. B

Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.

615V

65V

3V

5V

Triple Video Amplifier

AD813

PIN CONFIGURATION

14-Lead DIP and SOIC

OUT2

DISABLE1

DISABLE2

DISABLE3

V
+IN1
–IN1

OUT1

1
2
3

+

4

S

AD813

5
6
7

50 MHz while offering differential gain and phase error of

0.03% and 0.06°. This makes the AD813 ideal for broadcast
and consumer video electronics.

The AD813 offers low power of 5.5 mA per amplifier max and
runs on a single +3 V power supply. The outputs of each ampli­fier swing to within one volt of either supply rail to easily accom­modate video signals. While operating on a single +5 V supply
the AD813 still achieves 0.1 dB flatness to 20 MHz and 0.05%
& 0.05° of differential gain and phase performance. All this is
offered in a small 14-lead plastic DIP or SOIC package. These
features make this triple amplifier ideal for portable and battery
powered applications where size and power are critical.

The outstanding bandwidth of 125 MHz along with 500 V/µs of
slew rate make the AD813 useful in many general purpose, high
speed applications where a single +3 V or dual power supplies
up to ±15 V are needed. Furthermore the AD813 contains a
high speed disable function for each amplifier in order to power
down the amplifier or high impedance the output. This can then
be used in video multiplexing applications. The AD813 is avail­able in the industrial temperature range of –40°C to +85°C in
plastic DIP and SOIC packages as well as chips.

500mV

100

90

10
0%

5V

Figure 2. Channel Switching Characteristics for a 3:1 Mux

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] World Wide Web Site: http://www.analog.com
Fax: [phone] © Analog Devices, Inc., 1998

14

–IN2

13

+IN2

12

VS–

11

+IN3

10

9

–IN3

8

OUT3

500ns

AD813–SPECIFICATIONS

Dual Supply

(@ TA = +258C, RL = 150 V, unless otherwise noted)

Model AD813A

Conditions V

S

Min Typ Max Units

DYNAMIC PERFORMANCE

–3 dB Bandwidth G = +2, No Peaking ±5 V 45 65 MHz

±15 V 75 100 MHz

Bandwidth for 0.1 dB

Flatness G = +2 ±5 V 15 25 MHz

±15 V 25 50 MHz

Slew Rate

1

G = +2, RL = 1 kΩ±5 V 150 V/µs

±15 V 150 250 V/µs

G = –1, RL = 1 kΩ±5 V 225 V/µs

±15 V 450 V/µs

Settling Time to 0.1% G = –1, R

V

= 3 V Step ±5 V 50 ns

O

= 1 kΩ

L

VO = 10 V Step ±15 V 40 ns

NOISE/HARMONIC PERFORMANCE

Total Harmonic Distortion fC = 1 MHz, RL = 1 kΩ±15 V –90 dBc
Input Voltage Noise f = 10 kHz ±5 V, ±15 V 3.5 nV√Hz
Input Current Noise f = 10 kHz, +In ±5 V, ±15 V 1.5 pA√Hz

–In ±5 V, ±15 V 18 pA√Hz

Differential Gain Error NTSC, G = ±2, R

= 150 Ω±5 V 0.08 %

L

±15 V 0.03 0.09 %

Differential Phase Error ±5 V 0.13 Degrees

±15 V 0.06 0.12 Degrees

DC PERFORMANCE

Input Offset Voltage ±5 V, ±15 V 2 5 mV

T

MIN–TMAX

12 mV

Offset Drift ±5 V, ±15 V 15 µV/°C
–Input Bias Current ±5 V, ±15 V 5 30 µA

T

MIN–TMAX

35 µA

+Input Bias Current ± 5 V, ±15 V 0.5 1.7 µA

Open-Loop Voltage Gain V

Open-Loop Transresistance V

T

MIN–TMAX

= ±2.5 V, RL = 150 Ω±5 V 69 76 dB

O

T

MIN–TMAX

V

= ±10 V, RL = 1 kΩ±15 V 73 82 dB

O

T

MIN–TMAX

= ±2.5 V, RL = 150 Ω±5 V 300 500 kΩ

O

T

MIN–TMAX

= ±10 V, RL = 1 kΩ±15 V 400 900 kΩ

V

O

T

MIN–TMAX

66 dB

72 dB
200 kΩ
300 kΩ

2.5 µA

INPUT CHARACTERISTICS

Input Resistance +Input ±15 V 15 MΩ

–Input ±15 V 65 Ω
Input Capacitance +Input ±15 V 1.7 pF
Input Common Mode ±5 V ±4.0 V
Voltage Range ±15 V ±13.5 V
Common-Mode Rejection Ratio

Input Offset Voltage V

= ±2.5 V ±5 V 54 58 dB

CM

–Input Current 23µA/V
±Input Current 0.07 0.15 µA/V
Input Offset Voltage V

= ±10 V ±15 V 57 62 dB

CM

–Input Current 1.5 3.0 µA/V
+Input Current 0.05 0.1 µA/V

–2–

REV. B

Model AD813A

Conditions V

S

Min Typ Max Units

OUTPUT CHARACTERISTICS

Output Voltage Swing R

= 150 Ω, T

L

= 1 kΩ, T

R

L

MIN–TMAX

MIN–TMAX

±5 V 3.5 3.8 ±V
±15 V 13.6 14.0 ±V

Output Current ±5 V 25 40 mA

±15 V 30 50 mA

Short Circuit Current G = +2, R

= 715 Ω±15 V 100 mA

F

VIN = 2 V

MATCHING CHARACTERISTICS

Dynamic

Crosstalk G = +2, f = 5 MHz ±5 V, ±15 V –65 dB
Gain Flatness Match G = +2, f = 40 MHz ±15 V 0.1 dB

DC

Input Offset Voltage T
–Input Bias Current T

MIN–TMAX

MIN–TMAX

±5 V, ±15 V 0.5 3.5 mV
±5 V, ±15 V 2 25 µA

POWER SUPPLY

Operating Range ±1.2 ±18 V
Quiescent Current Per Amplifier ±5 V 3.5 4.0 mA

±15 V 4.5 5.5 mA

T

MIN–TMAX

±15 V 6.7 mA

Quiescent Current, Powered Down Per Amplifier ±5 V 0.5 0.65 mA

±15 V 0.75 1.0 mA

Power Supply Rejection Ratio

Input Offset Voltage VS = ±1.5 V to ±15 V 72 80 dB
–Input Current 0.3 0.8 µA/V
+Input Current 0.005 0.05 µA/V

AD813

DISABLE CHARACTERISTICS

Off Isolation f = 5 MHz ±5 V, ±15 V –57 dB
Off Output Impedance G = +1 ±5 V, ±15 V 12.5 pF
Channel-to-Channel 2 or 3 Channels ±5 V, ±15 V –65 dB
Isolation Mux, f = 5 MHz
Turn-On Time ±5 V, ±15 V 100 ns
Turn-Off Time 80 ns

NOTES

1

Slew rate measurement is based on 10% to 90% rise time in the specified closed-loop gain.

Specifications subject to change without notice.

REV. B

–3–

AD813–SPECIFICATIONS

Single Supply

(@ TA = +258C, RL = 150 V, unless otherwise noted)

Model AD813A

Conditions V

S

Min Typ Max Units

DYNAMIC PERFORMANCE

–3 dB Bandwidth G = +2, No Peaking +5 V 35 50 MHz

+3 V 25 40 MHz

Bandwidth for 0.1 dB

Flatness G = +2 +5 V 12 20 MHz

+3 V 8 15 MHz

Slew Rate

1

G = +2, RL = 1 kΩ +5 V 100 V/µs

+3 V 50 V/µs

NOISE/HARMONIC PERFORMANCE

Input Voltage Noise f = 10 kHz +5 V, +3 V 3.5 nV√Hz
Input Current Noise f = 10 kHz, +In +5 V, +3 V 1.5 pA√

–In +5 V, +3 V 18 pA√

Differential Gain Error

2

Differential Phase Error

2

NTSC, G = +2, RL = 150 Ω +5 V 0.05 %
G = +1 +3 V 0.2 %
G = +2 +5 V 0.05 Degrees
G = +1 +3 V 0.2 Degrees

DC PERFORMANCE

Input Offset Voltage +5 V, +3 V 1.5 5 mV

T

MIN–TMAX

10 mV

Offset Drift +5 V, +3 V 7 µV/°C
–Input Bias Current +5 V, +3 V 7 30 µA

T

MIN–TMAX

40 µA

+Input Bias Current +5 V, +3 V 0.5 1.7 µA

2.5 µA

Open-Loop Voltage Gain V

Open-Loop Transresistance V

T

MIN–TMAX

= +2.5 V p-p +5 V 65 70 dB

O

= +0.7 V p-p +3 V 69 dB

V

O

= +3 V p-p +5 V 180 300 kΩ

O

VO = +1 V p-p +3 V 225 kΩ

Hz
Hz

INPUT CHARACTERISTICS

Input Resistance +Input +5 V, +3 V 15 MΩ

–Input +5 V 90 Ω

Input Capacitance +Input 2 pF
Input Common Mode +5 V 1.0 4.0 V
Voltage Range +3 V 1.0 2.0 V
Common-Mode Rejection Ratio

Input Offset Voltage V

= 1.25 V to 3.75 V +5 V 54 58 dB

CM

–Input Current 3 6.5 µA/V
+Input Current 0.1 0.2 µA/V
Input Offset Voltage V

= 1 V to 2 V +3 V 56 dB

CM

–Input Current 3.5 µA/V
+Input Current 0.1 µA/V

OUTPUT CHARACTERISTICS

Output Voltage Swing p-p RL = 150 Ω, T

MIN–TMAX

+5 V 3.0 3.2 ± V p-p
+3 V 1.0 1.3 ± V p-p

Output Current +5 V 20 30 mA

+3 V 15 25 mA

Short Circuit Current G = +2, RF = 715 Ω +5 V 40 mA

VIN = 1 V

–4– REV. B

Model AD813A

Conditions V

S

Min Typ Max Units

MATCHING CHARACTERISTICS

Dynamic

Crosstalk G = +2, f = 5 MHz +5 V, +3 V –65 dB
Gain Flatness Match G = +2, f = 20 MHz +5 V, +3 V 0.1 dB

DC

Input Offset Voltage T
–Input Bias Current T

MIN–TMAX

MIN–TMAX

+5 V, +3 V 0.5 3.5 mV
+5 V, +3 V 2 25 µA

POWER SUPPLY

Operating Range 2.4 36 V
Quiescent Current Per Amplifier +5 V 3.2 4.0 mA

+3 V 3.0 4.0 mA

T

MIN–TMAX

+5 V 5.0 mA

Quiescent Current, Powered Down Per Amplifier +5 V 0.4 0.6 mA

+3 V 0.4 0.5 mA

Power Supply Rejection Ratio

Input Offset Voltage V

= +3.0 V to +30 V 76 dB

S

–Input Current 0.3 µA/V
+Input Current 0.005 µA/V

DISABLE CHARACTERISTICS

Off Isolation f = 5 MHz +5 V, +3 V –55 dB
Off Output Impedance G = +1 +5 V, +3 V 13 pF
Channel-to-Channel 2 or 3 Channel +5 V, +3 V –65 dB
Isolation Mux, f = 5 MHz
Turn-On Time +5 V, +3 V 100 ns
Turn-Off Time 80 ns

AD813

TRANSISTOR COUNT 111

NOTES

1

Slew rate measurement is based on 10% to 90% rise time in the specified closed-loop gain.

2

Single supply differential gain and phase are measured with the ac coupled circuit of Figure 52.

Specifications subject to change without notice.

ABSOLUTE MAXIMUM RATINGS

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±18 V

Internal Power Dissipation

2

Plastic (N) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.6 Watts

Small Outline (R) . . . . . . . . . . . . . . . . . . . . . . . . . 1.0 Watts

Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . ±V

Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . ±6V

Output Short Circuit Duration

. . . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves

Storage Temperature Range N, R . . . . . . . . –65°C to +125°C

Operating Temperature Range

AD813A . . . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to +85°C

1

Model Range Description Options

AD813AN –40°C to +85°C 14-Lead Plastic DIP N-14

S

AD813AR-14 –40°C to +85°C 14-Lead Plastic SOIC R-14
AD813ACHIPS –40°C to +85°C Die Form
AD813AR-REEL 13" REEL
AD813AR-REEL7 7" REEL
5962-9559601M2A* –55°C to +125°C 20-Lead LCC

*Refer to official DSCC drawing for tested specifications and pin configuration.

ORDERING GUIDE

Temperature Package Package

Lead Temperature Range (Soldering 10 sec) . . . . . . . +300°C

NOTES

1

Stresses above those listed under Absolute Maximum Ratings may cause perma-

nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.

2

Specification is for device in free air:

14-Lead Plastic DIP Package: θJA = 75°C/W
14-Lead SOIC Package: θJA = 120°C/W

REV. B

–5–

AD813

WARNING!

ESD SENSITIVE DEVICE

Maximum Power Dissipation

The maximum power that can be safely dissipated by the
AD813 is limited by the associated rise in junction temperature.
The maximum safe junction temperature for the plastic encap­sulated parts is determined by the glass transition temperature
of the plastic, about 150°C. Exceeding this limit temporarily
may cause a shift in parametric performance due to a change in
the stresses exerted on the die by the package. Exceeding a
junction temperature of 175°C for an extended period can result
in device failure.

While the AD813 is internally short circuit protected, this may
not be enough to guarantee that the maximum junction tem­perature (150°C) is not exceeded under all conditions. To
ensure proper operation, it is important to observe the derating
curves.

It must also be noted that in (noninverting) gain configurations
(with low values of gain resistor), a high level of input overdrive
can result in a large input error current, which may result in a
significant power dissipation in the input stage. This power
must be included when computing the junction temperature rise
due to total internal power.

METALIZATION PHOTO

Dimensions shown in inches and (mm).

0.124

+IN2

12

(3.15)

VS–
11

2.5

2.0

14-LEAD DIP PACKAGE

1.5

14-LEAD SOIC

1.0

MAXIMUM POWER DISSIPATION – Watts

0.5
–50 80

–40

AMBIENT TEMPERATURE –

20 30 40 50 60 70 90

010–10–20–30

C

T

= +150 C

J

Figure 3. Maximum Power Dissipation vs. Ambient
Temperature

VS–
11

VS–
11

+IN3

10

–IN2 13

OUT2 14

DISABLE1 1

DISABLE2 2

3

DISABLE3

VS+

4

+IN1

5

–IN1

6

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD813 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.

9 –IN3

8 OUT3

7 OUT1

0.057
(1.45)

–6–

REV. B