880 MHz, –3 dB Bandwidth (G = +1)
440 MHz, –3 dB Bandwidth (G = +2)
1200 V/s Slew Rate
10 ns Settling Time to 0.1%
Low Distortion
–65 dBc THD, f
= 5 MHz
C
33 dBm Third Order Intercept, F
–66 dB SFDR, f = 5 MHz
High Output Drive
70 mA Output Current
Drives Up to 4 Back-Terminated Loads (75 Each)
While Maintaining Good Differential Gain/Phase
Performance (0.05%/0.25)
APPLICATIONS
A-to-D Drivers
Video Line Drivers
Professional Cameras
Video Switchers
Special Effects
RF Receivers
GENERAL DESCRIPTION
The AD8001 is a low power, high speed amplifier designed
to operate on ±5V supplies. The AD8001 features unique
9
6
G = +2
3
R
= 100
L
0
–3
GAIN – dB
VS = 5V
R
FB
= 150 , G = +2)
L
= 10 MHz
1
= 1k
VS = 5V
= 820
R
FB
Current Feedback Amplifier
AD8001
FUNCTIONAL BLOCK DIAGRAMS
8-Lead PDIP (N-8),
CERDIP (Q-8) and SOIC (R-8)
NC
1
–IN
2
+IN
3
4
V–
AD8001
NC = NO CONNECT
NC
8
V+
7
6
OUT
NC
5
transimpedance linearization circuitry. This allows it to drive
video loads with excellent differential gain and phase performance on only 50 mW of power. The AD8001 is a current
feedback amplifier and features gain flatness of 0.1 dB to 100 MHz
while offering differential gain and phase error of 0.01% and
0.025°. This makes the AD8001 ideal for professional video
electronics such as cameras and video switchers. Additionally,
the AD8001’s low distortion and fast settling make it ideal for
buffer high speed A-to-D converters.
The AD8001 offers low power of 5.5 mA max (V
can run on a single +12 V power supply, while being capable of
delivering over 70 mA of load current. These features make this
amplifier ideal for portable and battery-powered applications
where size and power are critical.
The outstanding bandwidth of 800 MHz along with 1200 V/µs
of slew rate make the AD8001 useful in many general-purpose
high speed applications where dual power supplies of up to ±6 V
and single supplies from 6 V to 12 V are needed. The AD8001 is
available in the industrial temperature range of –40°C to +85°C.
5-Lead SOT-23-5
(RT-5)
AD8001
1
V
OUT
2
–V
S
34
+IN
= ±5 V) and
S
+V
5
S
–IN
–6
–9
–12
10M100M1G
FREQUENCY – Hz
Figure 1. Frequency Response of AD8001
REV. D
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective companies.
Figure 2. Transient Response of AD8001; 2 V Step, G = +2
Storage Temperature Range N, R . . . . . . . . . –65°C to +125°C
Operating Temperature Range (A Grade) . . . – 40°C to +85°C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . . 300°C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
The maximum power that can be safely dissipated by the
AD8001 is limited by the associated rise in junction temperature. The maximum safe junction temperature for plastic
encapsulated devices is determined by the glass transition temperature of the plastic, approximately 150°C. Exceeding this
limit temporarily may cause a shift in parametric performance
due to a change in the stresses exerted on the die by the package.
Exceeding a junction temperature of 175°C for an extended
period can result in device failure.
While the AD8001 is internally short circuit protected, this
may not be sufficient to guarantee that the maximum junction
temperature (150°C) is not exceeded under all conditions. To
ensure proper operation, it is necessary to observe the maximum
power derating curves.
ModelRangeDescriptionOptionBranding
AD8001AN–40°C to +85°C8-Lead PDIPN-8
AD8001AQ–55°C to +125°C8-Lead CERDIPQ-8
AD8001AR–40°C to +85°C8-Lead SOICR-8
AD8001AR-REEL–40°C to +85°C13" Tape and REELR-8
AD8001AR-REEL7–40°C to +85°C7" Tape and REELR-8
AD8001ART-REEL–40°C to +85°C13" Tape and REELRT-5HEA
AD8001ART-REEL7–40°C to +85°C7" Tape and REELRT-5HEA
AD8001ACHIPS–40°C to +85°CDie Form
5962-9459301MPA
*
Standard Military Drawing Device.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8001 features proprietary ESD protection circuitry, permanent damage may
*
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
REV. D
Figure 3. Plot of Maximum Power Dissipation vs.
Temperature
ORDERING GUIDE
TemperaturePackagePackage
–55°C to +125°C8-Lead CERDIPQ-8
WARNING!
ESD SENSITIVE DEVICE
–3–
AD8001
V
IN
HP8133A
PULSE
GENERATOR
TR/TF = 50ps
–Typical Performance Characteristics
806
0.001F
+V
806
50
S
AD8001
–V
S
0.1F
0.1F
0.001F
V
TO
OUT
TEKTRONIX
CSA 404 COMM.
SIGNAL
ANALYZER
RL = 100
5ns400mV
TPC 1. Test Circuit , Gain = +2
TPC 2. 1 V Step Response, G = +2
V
IN
LeCROY 9210
PULSE
GENERATOR
TR/TF = 350ps
TPC 4. 2 V Step Response, G = +2
909
0.001F
+V
S
0.1F
V
TEKTRONIX
CSA 404 COMM.
SIGNAL
ANALYZER
AD8001
0.1F
50
0.001F
–V
S
TPC 5. Test Circuit, Gain = +1
TO
OUT
RL = 100
0.5V
5ns
TPC 3. 2 V Step Response, G = +1
–4–
TPC 6. 100 mV Step Response, G = +1
REV. D
9
VALUE OF FEEDBACK RESISTOR (RF) –
–3dB BANDWIDTH – MHz
1000
0
1000
600
200
600
400
500
800
900800700
R
PACKAGE
N
PACKAGE
VS = 5V
R
L
= 100
G = +2
–50
–70
–100
100k100M10M1M10k
–80
–90
–60
FREQUENCY – Hz
HARMONIC DISTORTION – dBc
V
OUT
= 2V p-p
R
L
= 100
G = +2
5V SUPPLIES
SECOND HARMONIC
THIRD HARMONIC
VS = 5V
6
G = +2
3
R
= 100
L
0
–3
GAIN – dB
–6
–9
–12
10M100M1G
VS = 5V
R
= 1k
FB
FREQUENCY – Hz
R
FB
AD8001
= 820
–0.1
–0.2
–0.3
–0.4
–0.5
OUTPUT – dB
–0.6
–0.7
–0.8
–0.9
TPC 8. 0.1 dB Flatness, R Package (for N Package Add
Ω
to RF)
50
–50
–60
–70
–80
–90
HARMONIC DISTORTION – dBc
–100
–110
TPC 7. Frequency Response, G = +2
0.1
0
G = +2
= 100
R
L
= 50mV
V
IN
1M10M100M
V
= 2V p-p
OUT
= 1k
R
L
G = +2
SECOND HARMONIC
TPC 9. Distortion vs. Frequency, RL = 1 k
100k100M10M1M10k
FREQUENCY – Hz
FREQUENCY – Hz
RF = 698
RF = 750
5V SUPPLIES
THIRD HARMONIC
RF =
649
Ω
TPC 10. –3 dB Bandwidth vs. R
TPC 11. Distortion vs. Frequency, RL = 100
0.08
G = +2
0.06
0.04
0.02
0.00
DIFF PHASE – Degrees
0.02
0.01
0.00
–0.01
DIFF GAIN – %
–0.02
= 806
R
F
1 AND 2 BACK TERMINATED
LOADS (150 AND 75)
0
2 BACK TERMINATED
LOADS (75)
1 BACK TERMINATED
LOAD (150)
IRE
F
Ω
100
TPC 12. Differential Gain and Differential Phase
REV. D
–5–
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