1.5 GHz, −3 dB bandwidth (G = +1)
650 MHz, full power bandwidth (G = +2, V
Slew rate: 4100 V/µs
0.1% settling time: 12 ns
Excellent video specifications
0.1 dB flatness: 170 MHz
Differential gain: 0.02%
Differential phase: 0.01°
Output overdrive recovery: 22 ns
Low noise: 1.6 nV/√Hz input voltage noise
Low distortion over wide bandwidth
75 dBc SFDR @ 20 MHz
62 dBc SFDR @ 50 MHz
Input offset voltage: 1 mV typ
High output current: 100 mA
Wide supply voltage range: 4.5 V to 12 V
Supply current: 13.5 mA
Power-down mode
APPLICATIONS
Professional video
High speed instrumentation
Video switching
IF/RF gain stage
CCD imaging
GENERAL DESCRIPTION
The AD8000 is an ultrahigh speed, high performance, current
feedback amplifier. Using ADI’s proprietary eXtra Fast Complementary Bipolar (XFCB) process, the amplifier can achieve a
small signal bandwidth of 1.5 GHz and a slew rate of 4100 V/µs.
The AD8000 has low spurious-free dynamic range (SFDR) of
75 dBc @ 20 MHz and input voltage noise of 1.6 nV/√Hz. The
AD8000 can drive over 100 mA of load current with minimal
distortion. The amplifier can operate on +5 V to ±6 V. These
specifications make the AD8000 ideal for a variety of applications, including high speed instrumentation.
With a differential gain of 0.02%, differential phase of 0.01°, and
0.1 dB flatness out to 170 MHz, the AD8000 has excellent video
specifications, which ensure that even the most demanding
video systems maintain excellent fidelity.
= 2 V p-p)
O
AD8000
CONNECTION DIAGRAMS
1POWER DOWN
2FEEDBACK
3–IN
4+IN
Figure 1. 8-Lead AD8000, 3 mm × 3 mm LFCSP (CP-8-2)
FEEDBACK 1
2
–IN
+IN 3
4
–V
S
Figure 2. 8-Lead AD8000 SOIC/EP (RD-8-1)
3
VS = ±5V
2
= 150Ω
R
L
= 2V p-p
V
OUT
1
0
–1
–2
–3
–4
NORMALIZED GAIN (dB)
–5
–6
–7
1100101000
Figure 3. Large S ignal Frequenc y Respons e
The AD8000 power-down mode reduces the supply current to
1.3 mA. The amplifier is available in a tiny 8-lead LFCSP package, as well as in an 8-lead SOIC package. The AD8000 is rated
to work over the extended industrial temperature range (−40°C
to +125°C). A triple version of the AD8000 (AD8003) is underdevelopment.
AD8000
NC = NO CONNECT
AD8000
NC = NO CONNECT
FREQUENCY (MHz)
7
5
G = +2, R
POWER DOWN8
+V
S
OUTPUT6
NC
= 432Ω
F
8+V
S
7 OUTPUT
6NC
5–V
S
05321-001
05321-002
05321-003
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
At TA = 25°C, VS = ±5 V, RL = 150 Ω, Gain = +2, RF = RG = 432 Ω, unless otherwise noted. Exposed paddle should be connected to ground.
Table 1.
Parameter Conditions Min Typ Max Unit
DYNAMIC PERFORMANCE
−3 dB Bandwidth G = +1, VO = 0.2 V p-p, SOIC/LFCSP 1580/1350 MHz
G = +2, VO = 2 V p-p, SOIC/LFCSP 650/610 MHz
Bandwidth for 0.1 dB Flatness VO = 2 V p-p, SOIC/LFCSP 190/170 MHz
Slew Rate G = +2, VO = 4 V step 4100 V/µs
Settling Time to 0.1% G = +2, VO = 2 V step 12 ns
NOISE/HARMONIC PERFORMANCE
Second/Third Harmonic VO = 2 V p-p, f = 5 MHz, LFCSP only 86/89 dBc
Second/Third Harmonic VO = 2 V p-p, f = 20 MHz, LFCSP only 75/79 dBc
Input Voltage Noise f = 100 kHz 1.6 nV/√Hz
Input Current Noise f = 100 kHz, −IN 26 pA/√Hz
f = 100 kHz, +IN 3.4 pA/√Hz
Differential Gain Error NTSC, G = +2 0.02 %
Differential Phase Error NTSC, G = +2 0.01 Degree
DC PERFORMANCE
Input Offset Voltage 1 10 mV
Input Offset Voltage Drift 11 µV/°C
Input Bias Current (Enabled) +I
−I
Transimpedance 570 890 1600 kΩ
INPUT CHARACTERISTICS
Noninverting Input Impedance 2/3.6 MΩ/pF
Input Common-Mode Voltage Range −3.5 to +3.5 V
Common-Mode Rejection Ratio VCM = ±2.5 V −52 −54 −56 dB
Overdrive Recovery G = +1, f = 1 MHz, triangle wave 30 ns
POWER DOWN PIN
Power-Down Input Voltage Power-down < +VS – 3.1 V
Enabled > +VS – 1.9 V
Turn-Off Time
Output Voltage Swing RL = 100 Ω ±3.7 ±3.9 V
Output Voltage Swing RL = 1 kΩ ±3.9 ±4.1 V
Linear Output Current VO = 2 V p-p, second HD < −50 dBc 100 mA
Overdrive Recovery G = + 2, f = 1 MHz, triangle wave 45 ns
G = +2, VIN = 2.5 V to 0 V step 22 ns
POWER SUPPLY
Operating Range 4.5 12 V
Quiescent Current 12.7 13.5 14.3 mA
Quiescent Current (Power-Down) 1.1 1.3 1.65 mA
Power Supply Rejection Ratio −PSRR/+PSRR −56/−61 −59/−63 dB
B
B
50% of power-down voltage to
10% of V
50% of power-down voltage to
90% of V
final, VIN = 0.3 V p-p
OUT
final, VIN = 0.3 V p-p
OUT
−5 +4 µA
−3 +45 µA
150 ns
300 ns
Rev. 0 | Page 3 of 20
AD8000
SPECIFICATIONS WITH +5 V SUPPLY
At TA = 25°C, VS = +5 V, RL = 150 Ω, Gain = +2, RF = RG = 432 Ω, unless otherwise noted. Exposed paddle should be connected to ground.
Table 2.
Parameter Conditions Min Typ Max Unit
DYNAMIC PERFORMANCE
−3 dB Bandwidth G = +1, VO = 0.2 V p-p 980 MHz
G = +2, VO = 2 V p-p 477 MHz
G = +10, VO = 0.2 V p-p 328 MHz
Bandwidth for 0.1 dB Flatness VO = 0.2 V p-p 136 MHz
V
Slew Rate G = +2, VO = 2 V step 2700 V/µs
Settling Time to 0.1% G = +2, VO = 2 V step 16 ns
NOISE/HARMONIC PERFORMANCE
Second/Third Harmonic VO = 2 V p-p, 5 MHz, LFCSP only 71/71 dBc
Second/Third Harmonic VO = 2 V p-p, 20 MHz, LFCSP only 60/62 dBc
Input Voltage Noise f = 100 kHz 1.6 nV/√Hz
Input Current Noise f = 100 kHz, −IN 26 pA/√Hz
f = 100 kHz, +IN 3.4 pA/√Hz
Differential Gain Error NTSC, G = +2 0.01 %
Differential Phase Error NTSC, G = +2 0.06 Degree
DC PERFORMANCE
Input Offset Voltage 1.3 10 mV
Input Offset Voltage Drift 18 µV/°C
Input Bias Current (Enabled) +I
−I
Transimpedance 440 800 1500 kΩ
INPUT CHARACTERISTICS
Noninverting Input Impedance 2/3.6 MΩ/pF
Input Common-Mode Voltage Range 1.5 to 3.6 V
Common-Mode Rejection Ratio VCM = ±2.5 V −51 −52 −54 dB
Overdrive Recovery G = +1, f = 1 MHz, triangle wave 60 ns
POWER DOWN PIN
Power-Down Input Voltage Power-down < +VS − 3.1 V
Enable > +VS − 1.9 V
Turn-Off Time
Output Voltage Swing RL = 100 Ω 1.1 to 3.9 1.05 to 4.1 V
R
Linear Output Current VO = 2 V p-p, second HD < −50 dBc 70 mA
Overdrive Recovery G = +2, f = 100 kHz, triangle wave 65 ns
POWER SUPPLY
Operating Range 4.5 12 V
Quiescent Current 11 12 13 mA
Quiescent Current (Power-Down) 0.7 0.95 1.25 mA
Power Supply Rejection Ratio −PSRR/+PSRR −55/−60 −57/−62 dB
= 2 V p-p 136 MHz
O
B
B
50% of power-down voltage to
10% of V
final, VIN = 0.3 V p-p
OUT
50% of power-down voltage to
90% of V
= 1 kΩ 1 to 3.1 0.85 to 4.15 V
L
final, VIN = 0.3 V p-p
OUT
−5 +3 µA
−1 +45 µA
200 ns
300 ns
Rev. 0 | Page 4 of 20
AD8000
(
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter Rating
Supply Voltage 12.6 V
Power Dissipation See Figure 4
Common-Mode Input Voltage −VS − 0.7 V to +VS + 0.7 V
Differential Input Voltage
Exposed Paddle Voltage −V
±V
S
S
The power dissipated in the package (P
quiescent power dissipation and the power dissipated in the die
due to the AD8000 drive at the output. The quiescent power is
the voltage between the supply pins (V
current (I
= Quiescent Power + (Tot a l Dri v e P o w er – Load Power)
P
D
Storage Temperature −65°C to +125°C
Operating Temperature Range −40°C to +125°C
Lead Temperature Range
300°C
D
(Soldering, 10 sec)
Junction Temperature 150°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
RMS output voltages should be considered. If R
to −V
, as in single-supply operation, the total drive power is
S
× I
V
S
OUT
the worst case, when V
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
D
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
θJA is specified for the worst-case conditions, that is, θJA is specified for device soldered in the circuit board for surface-mount
packages.
Table 4. Thermal Resistance
Package Type θ
JA
SOIC-8 80 30 °C/W
3 mm × 3 mm LFCSP 93 35 °C/W
θ
JC
Unit
In single-supply operation with R
= VS/2.
is V
OUT
Airflow increases heat dissipation, effectively reducing θ
Also, more metal directly in contact with the package leads and
exposed paddle from metal traces, through holes, ground, and
power planes reduces θ
Figure 4 shows the maximum safe power dissipation in the
package vs. the ambient temperature for the exposed paddle
SOIC (80°C/W) and the LFCSP (93°C/W) package on a JEDEC
standard 4-layer board. θ
Maximum Power Dissipation
The maximum safe power dissipation for the AD8000 is limited
by the associated rise in junction temperature (T
) on the die. At
J
approximately 150°C, which is the glass transition temperature,
the properties of the plastic change. Even temporarily exceeding
this temperature limit can change the stresses that the package
exerts on the die, permanently shifting the parametric performance of the AD8000. Exceeding a junction temperature of
175°C for an extended period of time can result in changes
in silicon devices, potentially causing degradation or loss of
functionality.
MAXIMUM POWER DISSIPATION (W)
Figure 4. Maximum Power Dissipation vs. Temperature for a 4-Layer Board
).
S
⎛
V
V
()
⎜
IVP
SS
⎜
⎝
OUTS
×+×=
R
2
L
. If the rms signal levels are indeterminate, consider
= VS/4 for RL to midsupply.
OUT
2
)
4
/V
()
3.0
2.5
2.0
1.5
1.0
0.5
0
–40
–30 –20 –10 0 10 2040803050 60 7010090120110
S
+×=
IVP
SS
R
L
.
JA
values are approximations.
JA
SOIC
LFCSP
AMBIENT TEMPERATURE (°C)
) is the sum of the
D
) times the quiescent
S
⎞
⎟
⎟
⎠
L
2
V
OUT
–
R
L
is referenced
L
referenced to −VS, worst case
.
JA
05321-063
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate
on the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation
and loss of functionality.
Rev. 0 | Page 5 of 20
AD8000
TYPICAL PERFORMANCE CHARACTERISTICS
3
VS = ±5V
R
= 150Ω
2
L
= 200mV p-p
V
OUT
1
0
–1
–2
–3
–4
NORMALIZED GAIN (dB)
–5
–6
–7
G = +10, R
= 432Ω, RG = 432Ω
G = +2, R
F
= 357Ω, RG = 40.2Ω
F
1011001000
FREQUENCY (MHz)
Figure 5. Small Signal Frequency Response vs. Various Gains
G = +1, R
= 432Ω
F
05321-006
9
6
3
GAIN (dB)
VS = ±5V
0
G = +2
R
= 150Ω
L
V
= 200mV p-p
OUT
LFCSP
–3
1011001000
FREQUENCY (MHz)
Figure 8. Small Signal Frequency Respon se vs. R
R
F
= 432Ω
R
= 487Ω
F
RF = 392Ω
05321-011
F
3
2
1
0
–1
–2
–3
–4
NORMALIZED GAIN (dB)
–5
–6
–7
VS = ±5V
= 150Ω
R
L
= 200mV p-p
V
OUT
G = –10, R
= 432Ω, RG = 43.2Ω
F
G = –2, R
= 432Ω, RG = 215Ω
F
1011001000
FREQUENCY (MHz)
G = –1, R
= RG = 249Ω
F
Figure 6. Small Signal Frequency Response vs. Various Gains
3
VS = ±5V
2
= 150Ω
R
L
= 2V p-p
V
OUT
1
0
–1
–2
–3
–4
NORMALIZED GAIN (dB)
–5
–6
–7
1100101000
G = +4, R
G = +10, R
= 357Ω, RG = 121Ω
F
F
FREQUENCY (MHz)
= 432Ω
G = +1, R
F
= 357Ω, RG = 40.2Ω
= RG = 432Ω
G = +2, R
F
Figure 7. Large Signal Frequency Response vs. Various Gains
05321-007
05321-008
9
RF = 392Ω
6
RF = 432Ω
3
GAIN (dB)
VS = ±5V
0
G = +2
R
= 150Ω
L
V
= 2V p-p
OUT
LFCSP
–3
1011001000
FREQUENCY (MHz)
RF = 487Ω
Figure 9. Large S ignal Frequenc y Respons e vs. R
1000
100
10
TRANSIMPEDANCE (kΩ)
1
0.1
0.1110100100010000
VS = ±5V
= 100Ω
R
L
TZ
FREQUENCY (MHz)
PHASE
Figure 10. Transimpedance and Phase vs. Frequency
05321-012
F
200
150
100
50
PHASE (Degrees)
0
50
100
05321-027
Rev. 0 | Page 6 of 20
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