Analog Devices AD8000 Datasheet

1.5 GHz Ultrahigh Speed Op Amp

FEATURES

High speed

1.5 GHz, −3 dB bandwidth (G = +1) 650 MHz, full power bandwidth (G = +2, V Slew rate: 4100 V/µs

0.1% settling time: 12 ns

Excellent video specifications

0.1 dB flatness: 170 MHz Differential gain: 0.02%

Differential phase: 0.01° Output overdrive recovery: 22 ns Low noise: 1.6 nV/√Hz input voltage noise Low distortion over wide bandwidth

75 dBc SFDR @ 20 MHz

62 dBc SFDR @ 50 MHz Input offset voltage: 1 mV typ High output current: 100 mA Wide supply voltage range: 4.5 V to 12 V Supply current: 13.5 mA Power-down mode

APPLICATIONS

Professional video High speed instrumentation Video switching IF/RF gain stage CCD imaging

GENERAL DESCRIPTION

The AD8000 is an ultrahigh speed, high performance, current feedback amplifier. Using ADI’s proprietary eXtra Fast Complementary Bipolar (XFCB) process, the amplifier can achieve a small signal bandwidth of 1.5 GHz and a slew rate of 4100 V/µs.

The AD8000 has low spurious-free dynamic range (SFDR) of 75 dBc @ 20 MHz and input voltage noise of 1.6 nV/√Hz. The AD8000 can drive over 100 mA of load current with minimal distortion. The amplifier can operate on +5 V to ±6 V. These specifications make the AD8000 ideal for a variety of applications, including high speed instrumentation.

With a differential gain of 0.02%, differential phase of 0.01°, and

0.1 dB flatness out to 170 MHz, the AD8000 has excellent video specifications, which ensure that even the most demanding video systems maintain excellent fidelity.

= 2 V p-p)

O

AD8000

CONNECTION DIAGRAMS

1POWER DOWN 2FEEDBACK 3–IN 4+IN

Figure 1. 8-Lead AD8000, 3 mm × 3 mm LFCSP (CP-8-2)

FEEDBACK 1

2

–IN +IN 3

4

–V

S

Figure 2. 8-Lead AD8000 SOIC/EP (RD-8-1)

3

VS = ±5V

2

= 150Ω

R

L

= 2V p-p

V

OUT

1

0

–1

–2

–3

–4

NORMALIZED GAIN (dB)

–5

–6

–7

1 10010 1000

Figure 3. Large S ignal Frequenc y Respons e

The AD8000 power-down mode reduces the supply current to

1.3 mA. The amplifier is available in a tiny 8-lead LFCSP package, as well as in an 8-lead SOIC package. The AD8000 is rated to work over the extended industrial temperature range (−40°C to +125°C). A triple version of the AD8000 (AD8003) is underdevelopment.

AD8000

NC = NO CONNECT

AD8000

NC = NO CONNECT

FREQUENCY (MHz)

7

5

G = +2, R

POWER DOWN8 +V

S

OUTPUT6 NC

= 432Ω

F

8+V

S

7 OUTPUT 6NC 5–V

S

05321-001

05321-002

05321-003

Rev. 0

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.

www.analog.com

AD8000

SPECIFICATIONS WITH ±5 V SUPPLY

At TA = 25°C, VS = ±5 V, RL = 150 Ω, Gain = +2, RF = RG = 432 Ω, unless otherwise noted. Exposed paddle should be connected to ground.

Table 1.

Parameter Conditions Min Typ Max Unit

DYNAMIC PERFORMANCE

−3 dB Bandwidth G = +1, VO = 0.2 V p-p, SOIC/LFCSP 1580/1350 MHz G = +2, VO = 2 V p-p, SOIC/LFCSP 650/610 MHz Bandwidth for 0.1 dB Flatness VO = 2 V p-p, SOIC/LFCSP 190/170 MHz Slew Rate G = +2, VO = 4 V step 4100 V/µs Settling Time to 0.1% G = +2, VO = 2 V step 12 ns

NOISE/HARMONIC PERFORMANCE

Second/Third Harmonic VO = 2 V p-p, f = 5 MHz, LFCSP only 86/89 dBc Second/Third Harmonic VO = 2 V p-p, f = 20 MHz, LFCSP only 75/79 dBc Input Voltage Noise f = 100 kHz 1.6 nV/√Hz Input Current Noise f = 100 kHz, −IN 26 pA/√Hz f = 100 kHz, +IN 3.4 pA/√Hz Differential Gain Error NTSC, G = +2 0.02 % Differential Phase Error NTSC, G = +2 0.01 Degree

DC PERFORMANCE

Input Offset Voltage 1 10 mV Input Offset Voltage Drift 11 µV/°C Input Bias Current (Enabled) +I

−I Transimpedance 570 890 1600 kΩ

INPUT CHARACTERISTICS

Noninverting Input Impedance 2/3.6 MΩ/pF Input Common-Mode Voltage Range −3.5 to +3.5 V Common-Mode Rejection Ratio VCM = ±2.5 V −52 −54 −56 dB Overdrive Recovery G = +1, f = 1 MHz, triangle wave 30 ns

POWER DOWN PIN

Power-Down Input Voltage Power-down < +VS – 3.1 V Enabled > +VS – 1.9 V Turn-Off Time

Turn-On Time

Input Bias Current

Enabled −1.1 +0.17 +1.4 µA Power-Down −300 −235 −160 µA

OUTPUT CHARACTERISTICS

Output Voltage Swing RL = 100 Ω ±3.7 ±3.9 V Output Voltage Swing RL = 1 kΩ ±3.9 ±4.1 V Linear Output Current VO = 2 V p-p, second HD < −50 dBc 100 mA Overdrive Recovery G = + 2, f = 1 MHz, triangle wave 45 ns G = +2, VIN = 2.5 V to 0 V step 22 ns

POWER SUPPLY

Operating Range 4.5 12 V Quiescent Current 12.7 13.5 14.3 mA Quiescent Current (Power-Down) 1.1 1.3 1.65 mA Power Supply Rejection Ratio −PSRR/+PSRR −56/−61 −59/−63 dB

B

50% of power-down voltage to 10% of V

50% of power-down voltage to 90% of V

final, VIN = 0.3 V p-p

OUT

final, VIN = 0.3 V p-p

OUT

−5 +4 µA

−3 +45 µA

150 ns

300 ns

Rev. 0 | Page 3 of 20

AD8000

SPECIFICATIONS WITH +5 V SUPPLY

At TA = 25°C, VS = +5 V, RL = 150 Ω, Gain = +2, RF = RG = 432 Ω, unless otherwise noted. Exposed paddle should be connected to ground.

Table 2.

Parameter Conditions Min Typ Max Unit

DYNAMIC PERFORMANCE

−3 dB Bandwidth G = +1, VO = 0.2 V p-p 980 MHz G = +2, VO = 2 V p-p 477 MHz G = +10, VO = 0.2 V p-p 328 MHz Bandwidth for 0.1 dB Flatness VO = 0.2 V p-p 136 MHz V Slew Rate G = +2, VO = 2 V step 2700 V/µs Settling Time to 0.1% G = +2, VO = 2 V step 16 ns

NOISE/HARMONIC PERFORMANCE

Second/Third Harmonic VO = 2 V p-p, 5 MHz, LFCSP only 71/71 dBc Second/Third Harmonic VO = 2 V p-p, 20 MHz, LFCSP only 60/62 dBc Input Voltage Noise f = 100 kHz 1.6 nV/√Hz Input Current Noise f = 100 kHz, −IN 26 pA/√Hz f = 100 kHz, +IN 3.4 pA/√Hz Differential Gain Error NTSC, G = +2 0.01 % Differential Phase Error NTSC, G = +2 0.06 Degree

DC PERFORMANCE

Input Offset Voltage 1.3 10 mV Input Offset Voltage Drift 18 µV/°C Input Bias Current (Enabled) +I

−I

Transimpedance 440 800 1500 kΩ

INPUT CHARACTERISTICS

Noninverting Input Impedance 2/3.6 MΩ/pF Input Common-Mode Voltage Range 1.5 to 3.6 V Common-Mode Rejection Ratio VCM = ±2.5 V −51 −52 −54 dB Overdrive Recovery G = +1, f = 1 MHz, triangle wave 60 ns

POWER DOWN PIN

Power-Down Input Voltage Power-down < +VS − 3.1 V Enable > +VS − 1.9 V Turn-Off Time

Turn-On Time

Input Current

Enabled −1.1 +0.17 +1.4 µA Power-Down −50 −40 −30 µA

OUTPUT CHARACTERISTICS

Output Voltage Swing RL = 100 Ω 1.1 to 3.9 1.05 to 4.1 V R Linear Output Current VO = 2 V p-p, second HD < −50 dBc 70 mA Overdrive Recovery G = +2, f = 100 kHz, triangle wave 65 ns

POWER SUPPLY

Operating Range 4.5 12 V Quiescent Current 11 12 13 mA Quiescent Current (Power-Down) 0.7 0.95 1.25 mA Power Supply Rejection Ratio −PSRR/+PSRR −55/−60 −57/−62 dB

= 2 V p-p 136 MHz

O

B

50% of power-down voltage to 10% of V

final, VIN = 0.3 V p-p

OUT

50% of power-down voltage to 90% of V

= 1 kΩ 1 to 3.1 0.85 to 4.15 V

L

final, VIN = 0.3 V p-p

OUT

−5 +3 µA

−1 +45 µA

200 ns

300 ns

Rev. 0 | Page 4 of 20

AD8000

(

ABSOLUTE MAXIMUM RATINGS

Table 3.

Parameter Rating

Supply Voltage 12.6 V Power Dissipation See Figure 4 Common-Mode Input Voltage −VS − 0.7 V to +VS + 0.7 V Differential Input Voltage

Exposed Paddle Voltage −V

±V

S

The power dissipated in the package (P quiescent power dissipation and the power dissipated in the die due to the AD8000 drive at the output. The quiescent power is the voltage between the supply pins (V current (I

= Quiescent Power + (Tot a l Dri v e P o w er – Load Power)

P

D

Storage Temperature −65°C to +125°C Operating Temperature Range −40°C to +125°C Lead Temperature Range

300°C

D

(Soldering, 10 sec)

Junction Temperature 150°C

Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any

RMS output voltages should be considered. If R to −V

, as in single-supply operation, the total drive power is

S

× I

V

S

OUT

the worst case, when V

other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute

D

maximum rating conditions for extended periods may affect device reliability.

THERMAL RESISTANCE

θJA is specified for the worst-case conditions, that is, θJA is specified for device soldered in the circuit board for surface-mount packages.

Table 4. Thermal Resistance

Package Type θ

JA

SOIC-8 80 30 °C/W 3 mm × 3 mm LFCSP 93 35 °C/W

θ

JC

Unit

In single-supply operation with R

= VS/2.

is V

OUT

Airflow increases heat dissipation, effectively reducing θ Also, more metal directly in contact with the package leads and exposed paddle from metal traces, through holes, ground, and power planes reduces θ

Figure 4 shows the maximum safe power dissipation in the package vs. the ambient temperature for the exposed paddle SOIC (80°C/W) and the LFCSP (93°C/W) package on a JEDEC standard 4-layer board. θ

Maximum Power Dissipation

The maximum safe power dissipation for the AD8000 is limited by the associated rise in junction temperature (T

) on the die. At

J

approximately 150°C, which is the glass transition temperature, the properties of the plastic change. Even temporarily exceeding this temperature limit can change the stresses that the package exerts on the die, permanently shifting the parametric performance of the AD8000. Exceeding a junction temperature of 175°C for an extended period of time can result in changes in silicon devices, potentially causing degradation or loss of functionality.

MAXIMUM POWER DISSIPATION (W)

Figure 4. Maximum Power Dissipation vs. Temperature for a 4-Layer Board

).

S

⎛

V

()

⎜

IVP

SS

⎜ ⎝

OUTS

×+×=

R

2

L

. If the rms signal levels are indeterminate, consider

= VS/4 for RL to midsupply.

OUT

2

)

4

/V

()

3.0

2.5

2.0

1.5

1.0

0.5

0

–40

–30 –20 –10 0 10 20 40 8030 50 60 70 10090 120110

S

+×=

IVP

SS

R

L

.

JA

values are approximations.

JA

SOIC

LFCSP

AMBIENT TEMPERATURE (°C)

) is the sum of the

D

) times the quiescent

S

⎞ ⎟

⎟ ⎠

L

2

V

OUT

–

R

L

is referenced

L

referenced to −VS, worst case

.

JA

05321-063

ESD CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation and loss of functionality.

Rev. 0 | Page 5 of 20

AD8000

TYPICAL PERFORMANCE CHARACTERISTICS

3

VS = ±5V R

= 150Ω

2

L

= 200mV p-p

V

OUT

1

0

–1

–2

–3

–4

NORMALIZED GAIN (dB)

–5

–6

–7

G = +10, R

= 432Ω, RG = 432Ω

G = +2, R

F

= 357Ω, RG = 40.2Ω

F

101 100 1000

FREQUENCY (MHz)

Figure 5. Small Signal Frequency Response vs. Various Gains

G = +1, R

= 432Ω

F

05321-006

9

6

3

GAIN (dB)

VS = ±5V

0

G = +2 R

= 150Ω

L

V

= 200mV p-p

OUT

LFCSP

–3

101 100 1000

FREQUENCY (MHz)

Figure 8. Small Signal Frequency Respon se vs. R

R

F

= 432Ω

R

= 487Ω

F

RF = 392Ω

05321-011

F

3

2

1

0

–1

–2

–3

–4

NORMALIZED GAIN (dB)

–5

–6

–7

VS = ±5V

= 150Ω

R

L

= 200mV p-p

V

OUT

G = –10, R

= 432Ω, RG = 43.2Ω

F

G = –2, R

= 432Ω, RG = 215Ω

F

101 100 1000

FREQUENCY (MHz)

G = –1, R

= RG = 249Ω

F

Figure 6. Small Signal Frequency Response vs. Various Gains

3

VS = ±5V

2

= 150Ω

R

L

= 2V p-p

V

OUT

1

0

–1

–2

–3

–4

NORMALIZED GAIN (dB)

–5

–6

–7

1 10010 1000

G = +4, R

G = +10, R

= 357Ω, RG = 121Ω

F

FREQUENCY (MHz)

= 432Ω

G = +1, R

F

= 357Ω, RG = 40.2Ω

= RG = 432Ω

G = +2, R

F

Figure 7. Large Signal Frequency Response vs. Various Gains

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9

RF = 392Ω

6

RF = 432Ω

3

GAIN (dB)

VS = ±5V

0

G = +2 R

= 150Ω

L

V

= 2V p-p

OUT

LFCSP

–3

101 100 1000

FREQUENCY (MHz)

RF = 487Ω

Figure 9. Large S ignal Frequenc y Respons e vs. R

1000

100

10

TRANSIMPEDANCE (kΩ)

1

0.1

0.1 1 10 100 1000 10000

VS = ±5V

= 100Ω

R

L

TZ

FREQUENCY (MHz)

PHASE

Figure 10. Transimpedance and Phase vs. Frequency

05321-012

F

200

150

100

50

PHASE (Degrees)

0

50

100

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Rev. 0 | Page 6 of 20

Analog Devices AD8000 Datasheet

FEATURES

APPLICATIONS

GENERAL DESCRIPTION

CONNECTION DIAGRAMS

TABLE OF CONTENTS

SPECIFICATIONS WITH ±5 V SUPPLY

SPECIFICATIONS WITH +5 V SUPPLY

ABSOLUTE MAXIMUM RATINGS

THERMAL RESISTANCE

Maximum Power Dissipation

ESD CAUTION

TYPICAL PERFORMANCE CHARACTERISTICS