Analog Devices AD620AR-REEL7, AD620AR-REEL, AD620AR, AD620BR-REEL7, AD620BR-REEL Datasheet

Low Cost, Low Power

a

FEATURES
EASY TO USE
Gain Set with One External Resistor

(Gain Range 1 to 1000)
Wide Power Supply Range (62.3 V to 618 V)
Higher Performance than Three Op Amp IA Designs
Available in 8-Lead DIP and SOIC Packaging
Low Power, 1.3 mA max Supply Current

EXCELLENT DC PERFORMANCE (“B GRADE”)
50 mV max, Input Offset Voltage

0.6 mV/8C max, Input Offset Drift

1.0 nA max, Input Bias Current
100 dB min Common-Mode Rejection Ratio (G = 10)

LOW NOISE

9 nV/√Hz, @ 1 kHz, Input Voltage Noise

0.28 mV p-p Noise (0.1 Hz to 10 Hz)

EXCELLENT AC SPECIFICATIONS
120 kHz Bandwidth (G = 100)
15 ms Settling Time to 0.01%

APPLICATIONS
Weigh Scales
ECG and Medical Instrumentation
Transducer Interface
Data Acquisition Systems
Industrial Process Controls
Battery Powered and Portable Equipment

PRODUCT DESCRIPTION

The AD620 is a low cost, high accuracy instrumentation ampli­fier that requires only one external resistor to set gains of 1 to

Instrumentation Amplifier

AD620

CONNECTION DIAGRAM

8-Lead Plastic Mini-DIP (N), Cerdip (Q)

and SOIC (R) Packages

1

R

G

2

–IN

3

+IN

–V

4

S

AD620

TOP VIEW

1000. Furthermore, the AD620 features 8-lead SOIC and DIP
packaging that is smaller than discrete designs, and offers lower
power (only 1.3 mA max supply current), making it a good fit
for battery powered, portable (or remote) applications.

The AD620, with its high accuracy of 40 ppm maximum

nonlinearity, low offset voltage of 50 µV max and offset drift of

0.6 µV/°C max, is ideal for use in precision data acquisition

systems, such as weigh scales and transducer interfaces. Fur­thermore, the low noise, low input bias current, and low power
of the AD620 make it well suited for medical applications such
as ECG and noninvasive blood pressure monitors.

The low input bias current of 1.0 nA max is made possible with
the use of Superβeta processing in the input stage. The AD620
works well as a preamplifier due to its low input voltage noise of

9 nV/√Hz at 1 kHz, 0.28 µV p-p in the 0.1 Hz to 10 Hz band,

0.1 pA/√Hz input current noise. Also, the AD620 is well suited
for multiplexed applications with its settling time of 15 µs to

0.01% and its cost is low enough to enable designs with one in­amp per channel.

8

7

6

5

R

G

+V

S

OUTPUT

REF

30,000

25,000

20,000

15,000

AD620A

10,000

5,000

TOTAL ERROR, PPM OF FULL SCALE

R

G

0

0 5 10 15 20

SUPPLY CURRENT – mA

3 OP-AMP
IN-AMP
(3 OP-07s)

Figure 1. Three Op Amp IA Designs vs. AD620

REV. E

Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.

10,000

1,000

TYPICAL STANDARD
BIPOLAR INPUT

100

10

(0.1 – 10Hz) – mV p-p

RTI VOLTAGE NOISE

1

0.1

IN-AMP

G = 100

SOURCE RESISTANCE – V

AD620 SUPERbETA
BIPOLAR INPUT
IN-AMP

100M10k1k 10M1M100k

Figure 2. Total Voltage Noise vs. Source Resistance

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] World Wide Web Site: http://www.analog.com
Fax: [phone] © Analog Devices, Inc., 1999

AD620–SPECIFICATIONS

(Typical @ +258C, VS = 615 V, and RL = 2 kV, unless otherwise noted)

AD620A AD620B AD620S

1

Model Conditions Min Typ Max Min Typ Max Min Typ Max Units

GAIN G = 1 + (49.4 k/RG)

Gain Range 1 10,000 1 10,000 1 10,000
Gain Error

2

G = 1 0.03 0.10 0.01 0.02 0.03 0.10 %

V

OUT

= ±10 V

G = 10 0.15 0.30 0.10 0.15 0.15 0.30 %
G = 100 0.15 0.30 0.10 0.15 0.15 0.30 %
G = 1000 0.40 0.70 0.35 0.50 0.40 0.70 %

Nonlinearity, V

G = 1–1000 R
G = 1–100 R

Gain vs. Temperature

VOLTAGE OFFSET (Total RTI Error = V

Input Offset, V

Over Temperature V

OSI

Average TC V

Output Offset, V

OSO

Over Temperature V
Average TC V

Offset Referred to the

= –10 V to +10 V,

OUT

= 10 kΩ 10 40 10 40 10 40 ppm

L

= 2 kΩ 10 95 10 95 10 95 ppm

L

G =1 10 10 10 ppm/°C

2

Gain >1

+ V

OSO

/G)

V

= ±5 V to ±15 V 30 125 15 50 30 125 µV

S

= ±5 V to ±15 V 185 85 225 µV

S

= ±5 V to ±15 V 0.3 1.0 0.1 0.6 0.3 1.0 µV/°C

S

V

= ±15 V 400 1000 200 500 400 1000 µV

S

V

= ±5 V 1500 750 1500 µV

S

= ±5 V to ±15 V 2000 1000 2000 µV

S

= ± 5 V to ±15 V 5.0 15 2.5 7.0 5.0 15 µV/°C

S

OSI

–50 –50 –50 ppm/°C

Input vs.
Supply (PSR) V

G = 1 80 100 80 100 80 100 dB

= ±2.3 V to ±18 V

S

G = 10 95 120 100 120 95 120 dB
G = 100 110 140 120 140 110 140 dB
G = 1000 110 140 120 140 110 140 dB

INPUT CURRENT

Input Bias Current 0.5 2.0 0.5 1.0 0.5 2 nA

Over Temperature 2.5 1.5 4 nA
Average TC 3.0 3.0 8.0 pA/°C

Input Offset Current 0.3 1.0 0.3 0.5 0.3 1.0 nA

Over Temperature 1.5 0.75 2.0 nA
Average TC 1.5 1.5 8.0 pA/°C

INPUT

Input Impedance

Differential 10i210i210i2GΩipF
Common-Mode 10i210i210i2GΩipF

Input Voltage Range

Over Temperature –VS + 2.1 +VS – 1.3 –VS + 2.1 +VS – 1.3 –VS + 2.1 +VS – 1.3 V

Over Temperature –VS + 2.1 +VS – 1.4 –VS + 2.1 +VS – 1.4 –VS + 2.3 +VS – 1.4 V

3

V

= ±2.3 V to ±5 V –V

S

V

= ±5 V to ±18 V –V

S

+ 1.9 +VS – 1.2 –VS + 1.9 +VS – 1.2 –VS + 1.9 +VS – 1.2 V

S

+ 1.9 +VS – 1.4 –VS + 1.9 +VS – 1.4 –VS + 1.9 +VS – 1.4 V

S

Common-Mode Rejection

Ratio DC to 60 Hz with
I kΩ Source Imbalance VCM = 0 V to ±10 V

G = 1 7390 8090 7390 dB
G = 10 93 110 100 110 93 110 dB
G = 100 110 130 120 130 110 130 dB
G = 1000 110 130 120 130 110 130 dB

OUTPUT

Output Swing R

Over Temperature –VS + 1.4 +VS – 1.3 –VS + 1.4 +VS – 1.3 –VS + 1.6 +VS – 1.3 V

Over Temperature –VS + 1.6 +VS – 1.5 –VS + 1.6 +VS – 1.5 –VS + 2.3 +VS – 1.5 V

= 10 kΩ,

L

V

= ±2.3 V to ±5 V –V

S

V

= ±5 V to ±18 V –V

S

+ 1.1 +VS – 1.2 –VS + 1.1 +VS – 1.2 –VS + 1.1 +VS – 1.2 V

S

+ 1.2 +VS – 1.4 –VS + 1.2 +VS – 1.4 –VS + 1.2 +VS – 1.4 V

S

Short Current Circuit ±18 ±18 ± 18 mA

–2–

REV. E

AD620

Model Conditions Min Typ Max Min Typ Max Min Typ Max Units

AD620A AD620B AD620S

DYNAMIC RESPONSE

Small Signal –3 dB Bandwidth

G = 1 1000 1000 1000 kHz
G = 10 800 800 800 kHz
G = 100 120 120 120 kHz
G = 1000 12 12 12 kHz

Slew Rate 0.75 1.2 0.75 1.2 0.75 1.2 V/µs
Settling Time to 0.01% 10 V Step

G = 1–100 15 15 15 µs
G = 1000 150 150 150 µs

NOISE

Voltage Noise, 1 kHz

Input, Voltage Noise, e
Output, Voltage Noise, e

RTI, 0.1 Hz to 10 Hz

Total RTI Noise = (e

ni

no

2

)+( e

ni

2

/ G)

no

913 913 913 nV/√Hz
72 100 72 100 72 100 nV/√Hz

G = 1 3.0 3.0 6.0 3.0 6.0 µV p-p
G = 10 0.55 0.55 0.8 0.55 0.8 µV p-p
G = 100–1000 0.28 0.28 0.4 0.28 0.4 µV p-p

Current Noise f = 1 kHz 100 100 100 fA/√Hz

0.1 Hz to 10 Hz 10 10 10 pA p-p

REFERENCE INPUT

R

IN

I

IN

Voltage Range –VS + 1.6 +VS – 1.6 –VS + 1.6 +VS – 1.6 –VS + 1.6 +VS – 1.6 V

V

, V

= 0 +50 +60 +50 +60 +50 +60 µA

IN+

REF

20 20 20 kΩ

Gain to Output 1 ± 0.0001 1 ± 0.0001 1 ± 0.0001

POWER SUPPLY

Operating Range
Quiescent Current V

Over Temperature 1.1 1.6 1.1 1.6 1.1 1.6 mA

4

= ±2.3 V to ±18 V 0.9 1.3 0.9 1.3 0.9 1.3 mA

S

±2.3 ±18 ±2.3 ±18 ±2.3 ±18 V

TEMPERATURE RANGE

For Specified Performance –40 to +85 –40 to +85 –55 to +125 °C

NOTES

1

See Analog Devices military data sheet for 883B tested specifications.

2

Does not include effects of external resistor RG.

3

One input grounded. G = 1.

4

This is defined as the same supply range which is used to specify PSR.

Specifications subject to change without notice.

1

REV. E

–3–

AD620

WARNING!

ESD SENSITIVE DEVICE

ABSOLUTE MAXIMUM RATINGS

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .±18 V

Internal Power Dissipation

2

. . . . . . . . . . . . . . . . . . . . . 650 mW

Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . . ±V

1

S

Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . .±25 V

Output Short Circuit Duration . . . . . . . . . . . . . . . . . Indefinite

Storage Temperature Range (Q) . . . . . . . . . . –65°C to +150°C

Storage Temperature Range (N, R) . . . . . . . . –65°C to +125°C

Operating Temperature Range

AD620 (A, B) . . . . . . . . . . . . . . . . . . . . . . –40°C to +85°C

AD620 (S) . . . . . . . . . . . . . . . . . . . . . . . . – 55°C to +125°C

Lead Temperature Range

(Soldering 10 seconds) . . . . . . . . . . . . . . . . . . . . . . . +300°C

NOTES

1

Stresses above those listed under Absolute Maximum Ratings may cause perma-

nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.

2

Specification is for device in free air:

8-Lead Plastic Package: θ
8-Lead Cerdip Package: θ
8-Lead SOIC Package: θ

= 95°C/W

JA

= 110°C/W

JA

= 155°C/W

JA

METALIZATION PHOTOGRAPH

Dimensions shown in inches and (mm).

Contact factory for latest dimensions.

RG*

+V

S

ORDERING GUIDE

Model Temperature Ranges Package Options*

AD620AN –40°C to +85°C N-8
AD620BN –40°C to +85°C N-8
AD620AR –40°C to +85°C SO-8
AD620AR-REEL – 40°C to +85°C 13" REEL
AD620AR-REEL7 –40°C to +85°C 7" REEL
AD620BR – 40°C to +85°C SO-8
AD620BR-REEL – 40°C to +85°C 13" REEL
AD620BR-REEL7 – 40°C to +85°C 7" REEL
AD620ACHIPS –40°C to +85°C Die Form
AD620SQ/883B –55°C to +125°C Q-8

*N = Plastic DIP; Q = Cerdip; SO = Small Outline.

OUTPUT

8

8

1

+IN

3

.

G

1

2

RG*

*FOR CHIP APPLICATIONS: THE PADS 1R
TO THE EXTERNAL GAIN REGISTER R
UNITY GAIN APPLICATIONS WHERE R
BE BONDED TOGETHER, AS WELL AS THE PADS 8R

–IN

0.125

(3.180)

AND 8RG MUST BE CONNECTED IN PARALLEL

G

. DO NOT CONNECT THEM IN SERIES TO RG. FOR

G

IS NOT REQUIRED, THE PADS 1RG MAY SIMPLY

G

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD620 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.

67

5

REFERENCE

0.0708
(1.799)

4

–V

S

–4–

REV. E

AD620

TEMPERATURE – 8C

INPUT BIAS CURRENT – nA

+I

B

–I

B

2.0

–2.0

175

–1.0

–1.5

–75

–0.5

0

0.5

1.0

1.5

1257525–25

FREQUENCY – Hz

1000

1

1 100k

100

10

10k1k100

VOLTAGE NOISE – nV/!Hz

GAIN = 1

GAIN = 10

10

GAIN = 100, 1,000

GAIN = 1000
BW LIMIT

Typical Characteristics

50

SAMPLE SIZE = 360

40

30

20

PERCENTAGE OF UNITS

10

0

–80

–40 0 +40 +80

INPUT OFFSET VOLTAGE – mV

(@ +258C, VS = 615 V, RL = 2 kV, unless otherwise noted)

Figure 3. Typical Distribution of Input Offset Voltage

50

SAMPLE SIZE = 850

40

30

20

Figure 6. Input Bias Current vs. Temperature

2

1.5

1

PERCENTAGE OF UNITS

10

0

–1200 +1200

–600 0 +600

INPUT BIAS CURRENT – pA

Figure 4. Typical Distribution of Input Bias Current

50

SAMPLE SIZE = 850

40

30

20

REV. E

PERCENTAGE OF UNITS

10

–400

–200 0 +200 +400

INPUT OFFSET CURRENT – pA

0

Figure 5. Typical Distribution of Input Offset Current

0.5

CHANGE IN OFFSET VOLTAGE – mV

0

051

WARM-UP TIME – Minutes

432

Figure 7. Change in Input Offset Voltage vs.
Warm-Up Time

Figure 8. Voltage Noise Spectral Density vs. Frequency,
(G = 1–1000)

–5–