Analog Devices AD586SQ, AD586MN, AD586LR, AD586LQ, AD586LN Datasheet

High Precision

a

FEATURES
Laser Trimmed to High Accuracy:

5.000 V ⴞ2.0 mV (M Grade)

Trimmed Temperature Coefficient:

2 ppm/ⴗC Max, 0ⴗC to 70ⴗC (M Grade)
5 ppm/ⴗC Max, –40ⴗC to +85ⴗC (B and L Grades)
10 ppm/ⴗC Max, –55ⴗC to +125ⴗC (T Grade)

Low Noise, 100 nV/√Hz
Noise Reduction Capability
Output Trim Capability
MIL-STD-883-Compliant Versions Available
Industrial Temperature Range SOICs Available
Output Capable of Sourcing or Sinking 10 mA

PRODUCT DESCRIPTION

The AD586 represents a major advance in the state-of-the-art in
monolithic voltage references. Using a proprietary ion-implanted
buried Zener diode and laser wafer trimming of high stability
thin-film resistors, the AD586 provides outstanding perfor­mance at low cost.

The AD586 offers much higher performance than most other
5 V references. Because the AD586 uses an industry standard
pinout, many systems can be upgraded instantly with the AD586.
The buried Zener approach to reference design provides lower
noise and drift than bandgap voltage references. The AD586
offers a noise reduction pin which can be used to further reduce
the noise level generated by the buried Zener.

The AD586 is recommended for use as a reference for 8-, 10-,
12-, 14-, or 16-bit D/A converters which require an external
precision reference. The device is also ideal for successive
approximation or integrating A/D converters with up to 14 bits
of accuracy and, in general, can offer better performance than
the standard on-chip references.

The AD586J, K, L, and M are specified for operation from 0°C
to 70°C, the AD586A and B are specified for –40°C to +85°C
operation, and the AD586S and T are specified for –55°C to
+125°C operation. The AD586J, K, L, and M are available in
an 8-lead plastic DIP. The AD586J, K, L, A, and B are avail­able in an 8-lead plastic surface mount small outline (SO)
package. The AD586J, K, L, S, and T are available in an 8-lead
cerdip package.

5 V Reference

AD586

FUNCTIONAL BLOCK DIAGRAM

V

IN

NOISE REDUCTION

AD586

R

Z1

R

S

GROUND

A1

R

F

R

I

R

Z2

NOTE: PINS 1, 3, AND 7 ARE INTERNAL TEST POINTS.
MAKE NO CONNECTIONS TO THESE POINTS.

PRODUCT HIGHLIGHTS

1. Laser trimming of both initial accuracy and temperature
coefficients results in very low errors over temperature with­out the use of external components. The AD586M has a
maximum deviation from 5.000 V of ±2.45 mV between
0°C and 70°C, and the AD586T guarantees ±7.5 mV maxi­mum total error between –55°C and +125°C.

2. For applications requiring higher precision, an optional fine­trim connection is provided.

3. Any system using an industry standard pinout reference can
be upgraded instantly with the AD586.

4. Output noise of the AD586 is very low, typically 4 µV p-p. A
noise reduction pin is provided for additional noise filtering
using an external capacitor.

5. The AD586 is available in versions compliant with MIL­STD-883. Refer to the Analog Devices Military Products
Databook or current AD586/883B data sheet for detailed
specifications.

V

OUT

R

T

TRIM

REV. D

Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] www.analog.com
Fax: [phone] © Analog Devices, Inc., 2001

AD586–SPECIFICATIONS

(@ TA = 25ⴗC, VIN = 15 V unless otherwise noted.)

Model Min Typ Max Min Typ Max Min Typ Max Min Typ Max Min Typ Max Min Typ Max Unit

AD586J AD586K/A AD586L/B AD586M AD586S AD586T

Output Voltage 4.980 5.020 4.995 5.005 4.9975 5.0025 4.998 5.002 4.990 5.010 4.9975 5.0025 V

Output Voltage Drift

l

0°C to 70°C 25 15 5 2 ppm/°C
–55°C to +125°C 20 10 ppm/°C

Gain Adjustment +6 +6 +6 +6 +6 +6 %

–2 –2 –2 –2 –2 –2 %

Line Regulation

1

10.8 V < +VIN < 36 V
T

MIN

to T

MAX

100 100 100 100 ±µV/V

11.4 V < +VIN < 36 V
T

to T

MIN

MAX

Load Regulation

Sourcing 0 < I

l

< 10 mA

OUT

150 150 ±µV/V

25°C 100 100 100 100 150 150 µV/mA
T

to T

MIN

MAX

Sinking –10 < I

OUT

< 0 mA

100 100 100 100 150 150 µV/mA

25°C 400 400 400 400 400 400 µV/mA

Quiescent Current 2 3 2 3 2 3 2 3 2 3 2 3 mA

Power Consumption 30 30 30 30 30 30 mW

Output Noise

0.1 Hz to 10 Hz 4 4 4 4 4 4 µV p-p

Spectral Density, 100 Hz 100 100 100 100 100 100 nV/√Hz

Long-Term Stability 15 15 15 15 15 15 ppm/1000 Hr

Short-Circuit Current-to-Ground 45 60 45 60 45 60 45 60 45 60 45 60 mA

Temperature Range

Specified Performance

Operating Performance

NOTES

1

Maximum output voltage drift is guaranteed for all packages and grades. Cerdip packaged parts are also 100°C production tested.

2

Lower row shows specified performance for A and B grades.

3

The operating temperature range is defined as the temperatures extremes at which the device will still function. Parts may deviate from their specified performance outside their

specified temperature range.

Specifications subject to change without notice.
Specifications in boldface are rested on all production units at final electrical test. Results from those tests are used to calculate outgoing quality levels. All min and max specifica­tions are guaranteed, although only those shown in boldface are tested on all production units unless otherwise specified.

2

3

0 70 0 70 0 70 0 70 –55 +125 –55 +125 °C

–40 +85 –40 +85 °C

–40 +85 –40 +85 –40 +85 –40 +85 –55 +125 –55 +125 °C

ABSOLUTE MAXIMUM RATINGS*

VIN to Ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 V

Power Dissipation

(25°C) . . . . . . . . . . . . . . . . . . . . . 500 mW

Storage Temperature . . . . . . . . . . . . . . . . . . –65°C to +150°C

Lead Temp (Soldering, 10 sec) . . . . . . . . . . . . . . . . . . . 300°C

Package Thermal Resistance

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22°C/W

θ

JC

θ

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110°C/W

JA

Output Protection: Output safe for indefinite short to ground

.

or V

IN

*Stresses above those listed under Absolute Maximum Ratings may cause perma-

nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.

–2–

CONNECTION DIAGRAM

(Top View)

1

TP*

AD586

2

V

IN

TOP VIEW

3

TP*

(Not to Scale)

4

GND

*TP DENOTES FACTORY TEST POINT.
NO CONNECTIONS, EXCEPT DUMMY PCB PAD,
SHOULD BE MADE T O THESE POINTS.

NOISE

8

REDUCTION

7

TP*

6

V

OUT

5

TRIM

REV. D

DlE SPECIFlCATIONS

WARNING!

ESD SENSITIVE DEVICE

AD586

The following specifications are tested at the dice level for AD586JCHIPS. These die are probed at 25ⴗC
only. (TA = 25ⴗC, VIN = 15 V unless otherwise noted.)

AD586JCHIPS

Parameter Min Typ Max Unit

Output Voltage 4.980 5.020 V
Gain Adjustment +6 %

–2 %

Line Regulation

10.8 V < + V

< 36 V 100 ±µ V/V

IN

Load Regulation

Sourcing 0 < I
Sinking –10 < I

< 10 mA 100 µV/mA

OUT

< 0 mA 400 µV/mA

OUT

Quiescent Current 3 mA
Short-Circuit Current-to-Ground 60 mA

NOTES

1

Both V

Die Thickness: The standard thickness of Analog Devices Bipolar dice is 24 mils ± 2 mils.
Die Dimensions: The dimensions given have a tolerance of ± 2 mils.
Backing: The standard backside surface is silicon (not plated). Analog Devices does not

recommend gold-backed dice for most applications.

Edges: A diamond saw is used to separate wafers into dice thus providing perpendicular

edges halfway through the die.

In contrast to scribed dice, this technique provides a more uniform die shape and size. The

perpendicular edges facilitate handling (such as tweezer pick-up) while the uniform shape
and size simplifies substrate design and die attach.

Top Surface: The standard top surface of the die is covered by a layer of glassivation. All

areas are covered except bonding pads and scribe lines.

Surface Metalization: The metalization to Analog Devices bipolar dice is aluminum.

Minimum thickness is 10,000Å.

Bonding Pads: All bonding pads have a minimum size of 4 mils by 4 mils. The passivation

windows have 3.5 mils by 3.5 mils minimum.

pads should be connected to the output.

OUT

DIE LAYOUT

Die Size: 0.096 ⴛ 0.061 Inches

ORDERING GUIDE

Initial Temperature Temperature Package Package

Model* Error Coefficient Range Description Option

AD586JN 20 mV 25 ppm/°C0°C to 70°C Plastic DIP N-8
AD586JQ 20 mV 25 ppm/°C0°C to 70°C Cerdip Q-8
AD586JR 20 mV 25 ppm/°C0°C to 70°C SOIC SO-8
AD586KN 5 mV 15 ppm/°C0°C to 70°C Plastic DIP N-8
AD586KQ 5 mV 15 ppm/°C0°C to 70°C Cerdip Q-8
AD586KR 5 mV 15 ppm/°C0°C to 70°C SOIC SO-8
AD586LN 2.5 mV 5 ppm/°C0°C to 70°C Plastic DIP N-8
AD586LR 2.5 mV 5 ppm/°C0°C to 70°C SOIC SO-8
AD586MN 2 mV 2 ppm/°C0°C to 70°C Plastic DIP N-8
AD586AR 5 mV 15 ppm/°C–40°C to +85°C SOIC SO-8
AD586BR 2.5 mV 5 ppm/°C–40°C to +85°C SOIC SO-8
AD586LQ 2.5 mV 5 ppm/°C0°C to 70°C Cerdip Q-8
AD586SQ 10 mV 20 ppm/°C –55°C to +125°C Cerdip Q-8
AD586TQ 2.5 mV 10 ppm/°C –55°C to +125°C Cerdip Q-8
AD586JCHIPS 20 mV 25 ppm/°C0°C to 70°C

*For details on grade and package offerings screened in accordance with MIL-STD-883, r efer to the Analog Devices Military Products Databook or

current AD586/883B data sheet.

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the AD586 features proprietary ESD protection circuitry, permanent damage may occur on devices
subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.

REV. D

–3–