ALCATEL 1905 LMI User Manual

A

lcatel 1905 LM I
Up to 20 mW WDM L-band version for external modulation
CW 1.55 µm Laser Module with optical Isolator

Description

This laser module contains an Alcatel
SLMQW DFB laser and is designed for use
with external modulation optimized for high
power Wavelength Division Multiplexed
(WDM) systems. The module incorporates a
polarization maintaining fiber pigtail,
thermoelectric cooler, precision thermistor,
and optical isolator for stable operation
under all conditions.

Features

• Up to 20 mW output power

• Wavelength selection according to

ITU-T G.692 (L-band)

• 50 GHz spacing available

• Optimized for use with LiNbO3 external

modulator

• Polarization maintaining fiber pigtail

• InGaAsP Distributed FeedBac k SLMQW (DFB)

laser

• Integral optical isolator

• Internal TEC and monitor photodiode

• Industry-standard hermetic 14 -pin butterfly

package

Applications

• Ultra long haul DWDM synchronous digital

transmission systems

• WDM submarine terminal digital transmission

systems

• Instrumentation.

Optical characteristics

Parameter Symb. Conditions Min Typical Max Units
Threshold current I
Output power P

th

F

Twave = 15 to 30 °C

Twave = 15 to 25 °C
Forward voltage V
Laser forward current I

F

F

10 mW, pin 3 & 11
20 mW, pin 3 & 11

Emission wavelength

λm
∆(Emitted-Target) Wavelength ∆λe
Laser chip temperature range for tunability

Spectral width

Tλ

∆λ
Side mode suppression ratio SMSR Pf 35 dB
Relative Intensity Noise RIN 10MHz to 10 GHz @ Pf -140 dB/Hz
Photodiode dark current Id V = -5 V 100 nA
Wavelength drift vs Tcase
Thermistor resistance R
Thermistor temperatur e c o effic ient R
TEC current I
TEC voltage V

∆λ/∆Tc

TH

t

t

t

TE/TM fiber extinction ratio of pigtail Er

Note : All limits start of life (except It, Vt), Tsubmount = 25 °C, Tcase = 25 °C, Pf = 20 mW, monitor bias – 5 V, unless otherwise stated

[1] Tcase = 70° C, Tsubmount = 20 °C, P = 20 mW
[2] Tchip = Tλ .Tλ is chip temperature required to meet target wavelength (see table 1)

10

mW

40 mA

20

Pf, pin 3 & 11 2.5 V

120

210

See table 1

@Tchip[2] - 0.1 +0.1 nm
@10mW [2]
@20mW [2]

15
15

30

25

CW, Pf, FWHM 5 MHz

0.5 pm/°C

9.7 10.3

- 3 - 5 %/K
[1] 1.3 A
[1] 2.5 V

20 dB

mW

mA
mA

°C
°C

k=Ω

Absolute maximum ratings

Parameters Min Max Unit

Operating case temperature -10 70 °C
Storage temperature -40 85 °C
Laser forward current 350 mA
Laser reverse voltage 2V
Photodiode forward current 1 mA
Photodiode reverse voltage 20 V
TEC Voltage 2.8 V
TEC Current 1.4 A
Lead soldering time (at 260°C) 10 s
Packing Mounting Screw Torque 0.2 Nm
[1] Human body model.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only.

Mechanical details

Pin out

N° Description N° Description

1 Thermistor 8 Case Ground
2 Thermistor 9 Case Ground
3 Laser DC bias (-) 10 Not Connected
4 Photodetector Anode (-) 11 RF common (+)
5 Photodetector Cathode (+) 12 RF input (-)
6 TEC (+) 13 Not Connected
7TEC (-)

7654321

TEC

200 nH

8 9 1011121314

TS

10 KΩ

pigtail

20Ω