AEROFLEX ACT-S512K32V Service Manual

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ACT-S512K32V High Speed 3.3Volt
16 Megabit SRAM Multichip Module
Features
4 Low Power CMOS 512K x 8 SRAMs in one MCM
Overall configuration as 512K x 32
Input and Output TTL Compatible
17, 20, 25, 35 & 45ns Access Times, 15ns Available by
Special Order
Full Military (-55°C to +125°C) Temperature Range
+3.3V Power Supply
Choice of Surface Mount or PGA Type Co-fired Packages:
68–Lead, Dual-Cavity CQFP (F2), .88"SQ x .20"max (.18"max
thickness available, contact factory for details) (Drops into the 68 Lead JEDEC .99"SQ CQFJ footprint)
66–Pin, PGA-Type (P1), 1.38"SQ x .245"max
66–Pin, PGA-Type (P7), 1.08"SQ x .185"max
Internal Decoupling Capacitors
DESC SMD# Pending
CIRCUIT TECHNOLOGY
www.aeroflex.com/act1.htm
General Description
The ACT–S512K32V is a High Speed 4 megabit CMOS SRAM Multichip Module (MCM) designed for full temperature range, 3.3V Power Supply, military, space, or high reliability mass memory and fast cache applications.
Block Diagram – PGA Type Package(P1,P7) & CQFP(F2)
CE4
A0 A18
OE
CE3 WE4WE3WE2WE1 CE1 CE2
512Kx8 512Kx8 512Kx8 512Kx8
I/O0-7 I/O8-15 I/O16-23 I/O24-31
I/O
A
WE
CE
Pin Description
0-31 Data I/O
0–18 Address Inputs
1–4 Write Enables
1–4 Chip Enables
Output Enable
OE
cc Power Supply
V
GND Ground
NC Not Connected
The MCM can be organized as a 512K x 32 bits, 1M x 16 bits or 2M x 8 bits device and is input and output TTL compatible. Writing is executed when the write enable (WE and chip enable (CE
) inputs are low. Reading is accomplished when WE output enable (OE
is high and CE and
) are both low. Access time grades of 17ns, 20ns, 25ns, 35ns and 45ns maximum are standard.
The products are designed for operation over the temperature range of -55°C to +125°C and screened under the full military environment. DESC Standard Military Drawing (SMD) part numbers are pending.
The ACT-S512K32V is manufactured in Aeroflex’s 80,000ft
2
MIL-PRF-38534 certified facility in Plainview, N.Y.
)
eroflex Circuit Technology - Advanced Multichip Modules © SCD3360 REV B 12/17/98
Absolute Maximum Ratings
Symbol Rating Range Units
Speed 15ns -40 to +85 °C
Speed 17ns to 45ns -55 to +125 °C
-65 to +150 °C
3.0 W
2.7 W
2.0 °C/W
8.0 °C/W
-0.5 to +4.6 V 300 °C
T
Ø
T
STG
P
J-C
V T
C
Case Operating Temperature Storage Temperature
D
Maximum Package Power Dissipation
P1,P7 Package F2 Package
Hottest Die, Max Thermal Resistance - Junction to Case
P1,P7 Package F2 Package
G
L
Maximum Signal Voltage to Ground Maximum Lead Temperature (10 seconds)
Normal Operating Conditions
Symbol Parameter Minimum Maximum Units
V
CC
V
IH
V
IL
Power Supply Voltage Input High Voltage Input Low Voltage
+3.0 +3.6 V +2.0 V
+ 0.3 V
CC
-0.3 +0.8 V
Capacitance
(f = 1MHz, T
Symbol Parameter Maximum Units
AD
C C
C
C C
A0A18 Capacitance
OE
OE Capacitance
WE
Write Enable Capacitance
CE
Chip Enable Capacitance
I/O
I/O0 – I/O31 Capacitance
Capacitance is guaranteed by design but not tested.
= 25°C)
C
50 pF 50 pF 20 pF 20 pF 20 pF
DC Characteristics
(3.0Vdc< VCC < 3.6Vdc, VSS = 0V, TC = -55°C to +125°C, Unless otherwise specified)
Parameter Sym Conditions
I
Input Leakage Current Output Leakage Current
Operating Supply Current 32 Bit Mode
Standby Current
Operating Supply Current 32 Bit Mode
Standby Current Output Low Voltage
Output High Voltage
I
CC1
I
CC2
I
I V
V
VCC = Max, VIN=0orV
LI
I
CE = VIH, OE = VIH, V
LO
CE
x32
SB1
x32
SB2
OL OH
= VIL, OE = VIH, f = 5 MHz, VCC = Max,
CMOS Compatible CE = VIH, OE = VIH, f = 5 MHz, VCC = Max,
CMOS Compatible CE
= VIL, OE = VIH, f = 50 MHz, VCC =
Max, CMOS Compatible CE = VCC, OE = VIH, f = 50 MHz, VCC =
Max, CMOS Compatible IOL = 8 mA, VCC = Min IOH = -4.0 mA, VCC = Min
CC
OUT
=0orV
CC
ALL Speeds
Min Max
10 µA 10 µA
600 mA
80 mA
750 mA
240 mA
0.4 V
2.4 V
Units
Aeroflex Circuit Technology ACT-S512K32V SCD3360 REV B 12/17/98 Plainview NY (516) 694-6700
2
(VCC = 3.3V, VSS = 0V, Tc = -55°C to +125°C)
Read Cycle
Parameter Sym
Read Cycle Time Address Access Time Chip Enable Access Time Output Hold from Address Change Output Enable to Output Valid Chip Enable to Output in Low Z * Output Enable to Output in Low Z * Chip Deselect to Output in High Z * Output Disable to Output in High Z * * Parameters guaranteed by design but not tested
Write Cycle
Parameter Sym
Write Cycle Time Chip Enable to End of Write Address Valid to End of Write Data Valid to End of Write Write Pulse Width Address Setup Time Output Active from End of Write * Write to Output in High Z * Data Hold from Write Time Address Hold Time * Parameters guaranteed by design but not tested
AC Characteristics
–017
Min Max
t
t
t
ACS
t t
t
CLZ
t
OLZ
t
CHZ
t
OHZ
t
WC
t
CW
t
AW
t
DW
t
WP
t
t
OW
t
WHZ
t
DH
t
AH
RC AA
OH OE
AS
17 20 25 35 45 ns
17 20 25 35 45 ns 17 20 25 35 45 ns
0 0 0 0 0 ns
9 10 12 25 35 ns 3 3 3 3 3 ns 0 0 0 0 0 ns
8 8 10 15 15 ns
8 8 10 15 15 ns
–017
Min Max
17 20 25 35 45 ns 15 15 20 30 35 ns 15 15 20 30 35 ns 12 12 15 20 30 ns 13 13 15 25 35 ns
0 0 0 0 0 ns 0 0 0 0 0 ns
8 11 13 15 15 ns 0 0 0 0 0 ns 0 1 2 2 2 ns
–020
Min Max
–020
Min Max
–025
Min Max
–025
Min Max
–035
Min Max
–035
Min Max
–045
Min Max
–045
Min Max
Units
Units
Truth Table
Mode CE OE WE Data I/O Power
Standby H X X High Z Standby (deselect/power down)
Read L L H Data Out Active Read L H H High Z Active (deselected) Write L X L Data In Active
Aeroflex Circuit Technology ACT-S512K32V SCD3360 REV B 12/17/98 Plainview NY (516) 694-6700
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