AEROFLEX ACT F2M32A Service Manual

查询ACT-D2M32A-090F18C供应商

ACT–F2M32A High Speed 64 Megabit

Sector Erase

FLASH Multichip Module

CIRCUIT TECHNOLOGY

Features

■ 4 Low Voltage/Power AMD 2M x 8 FLASH Die in One

MCM Package

■ Overall Configuration is 2M x 32

■ +5V Power Supply / +5V Programing Operation

■ Access Times of 90, 120 and 150 ns

■ Erase/Program Cycles – 100,000 Minimum

■ Sector erase architecture (Each Die)

● 32 uniform sectors of 64 Kbytes each

● Any combination of sectors can be erased. Also

supports full chip erase

● Sector group protection is user definable

■ Embedded Erase Algorithims – Automatically

pre-programs and erases the die or any sector

■ Embedded Program Algorithims – Automatically

programs and verifies data at specified address

www.aeroflex.com/act1.htm

■ Ready/Busy output (RY/BY) – Hardware method for

detection of program or erase cycle completion

■ Hardware RESET pin – Resets internal state machine

to the read mode

■ Erase Suspend/Resume – Supports reading or

programming data to a sector not being erased

■ Packaging – Hermetic Ceramic

● 68 Lead, .94" x .94" x .140" Single-Cavity Small

Outline Gull Wing, Aeroflex code# "F18" (Drops into
the 68 Lead JEDEC .99"SQ CQFJ footprint)

■ Internal Decoupling Capacitors for Low Noise

Operation

■ Commercial, Industrial and Military Temperature

Ranges

■ MIL-PRF-38534 Compliant MCMs Available

Block Diagram – CQFP(F18)

Standard Configuration

CE1 CE2

RESET

WE

OE

A0 – A20

RY/BY

2Mx8 2Mx8 2Mx8 2Mx8

8 8

I/O0-7 I/O8-15 I/O16-23 I/O24-31

8

Block Diagram – CQFP(F18)

Optional Configuration

RESET

OE

A0 – A20

2Mx8 2Mx8 2Mx8 2Mx8

8 8 8 8

I/O0-7 I/O8-15 I/O16-23 I/O24-31

CE

CE3 WE4WE3WE2WE1 CE1 CE2

Pin Description

I/O

0-31 Data I/O

3

CE4

A

0–20 Address Inputs

WE

CE

OE

RY/BY

RESET Reset

V

8

GND Ground

NC Not Connected

Write Enables

1-4 Chip Enables

Output Enable

Ready/Busy

CC Power Supply

General Description

Utilizing AMD’s Sector Erase
Flash Memory Die, the
ACT-F2M32A is a high speed,
64 megabit CMOS flash
multichip module (MCM)
designed for full temperature
range, military, space, or high
reliability applications.

The ACT-F2M32A consists of
four high-performance AMD
Am29F016 16Mbit (16,777,216
bit) memory die. Each die
contains 8 separately write or

Pin Description

erase sector groups of
256Kbytes (A sector group

I/O

CE4

0-31 Data I/O

A

0–20 Address Inputs

WE

1-4 Write Enable

CE

1-4 Chip Enables

OE

RESET

V

CC Power Supply

GND Ground

NC Not Connected

Output Enable

Reset

consists of 4 adjacent sectors of
64Kbytes each).

The command register is
written by bringing WE
low level (V
and OE

IL), while CE is low

is high (VIH). Reading is

to a logic

accomplished by chip Enable

) and Output Enable (OE)

(CE
being logically active. Access
time grades of 90ns, 120ns and
150ns maximum are standard.

eroflex Circuit Technology - Advanced Multichip Modules © SCD1666A REV A 9/12/97

General Description, Cont’d,

The ACT-F2M32A is packaged in a hermetically sealed co-fired ceramic 68 lead, .94"
SQ Ceramic Gull Wing CQFP package. This allows operation in a military environment
temperature range of -55°C to +125°C.

The ACT-F2M32A can be programmed (both read and write functions) in-system using
the +5.0V V
operations. The end of program or erase is detected by the RY/BY
DQ7, or by the Toggle bit (DQ6).

CC power supply. A 12.0V VPP is not required for programming or erase

pin, Data Polling of

The ACT-F2M32A also has a hardware RESET

pin. When this pin is driven low,
execution of any Embedded Program Alggorithm or Embedded Erase Algorithm will be
terminated.

Each block can be independently erased and programmed 100,000 times at +25°C.

For Detail Information regarding the operation of the Am29F016 Sector Erase Flash

Memory, see the AMD datasheet (Publication 18805).

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Absolute Maximum Ratings

Parameter Range Units

Case Operating Temperature Range
Storage Temperature Range

(1)

Voltage with Respect to GND (All pins except A
Voltage on Pins A

9, OE, RESET

(2)

Vcc Supply Voltage with Respect to Ground
Output Short Circuit Current

Notes:

1. Minimum DC voltage is -0.5V on input/output pins. During Transitions, inputs may undershoot GND to -2.0V for periods up to 20ns. Maximum DC voltage on
input/output pins is V

2. Minimum DC input voltage on A
Maximum DC input voltage on A

3. No more than one output shorted to ground for no more than 1 second.
NOTICE: Stresses above those listed under "Absolute Maximums Rating" may cause permanent damage to the device. These are stress rating only; functional

operation beyond the "Operation Conditions" is not recommended and extended exposure beyond the "Operation Conditions" may effect device reliability.

CC + 0.5V, which may overshoot to VCC + 2.0V for periods up to 20ns.

(3)

9 ,OE, RESET pins is -0.5V. During Voltage transitions, A9, OE & RESET may overshoot GND to -2.0V for periods up to 20ns.

9 is +12.5V which may overshoot to 14V for periods up to 20ns.

9)

(1)

-55 to +125 °C

-65 to +150 °C

-2.0 to +7.0 V

-2.0 to +13.5 V

-2.0 to +7.0 V
200 mA

Recommended Operating Conditions

Symbol Parameter Minimum Maximum Units

CC

V

V
V

T

5V Power Supply Voltage (10%)

IH

Input High Voltage (CMOS)

IL

Input Low Voltage

C

Operating Temperature (Military)

+4.5 +5.5 V

0.7 x V

CC V

+ 0.3 V

cc

-0.5 +0.8 V

-55 +125 °C

Capacitance

(f = 1MHz, TC = 25°C, Standard Configuration)

Symbol Parameter Maximum Units

C
C

C

RESET

C

C

RY/BY

C

C

AD

A0 – A20 Capacitance

OE

OE Capacitance

CE

CE Capacitance
RESET Capacitance

WE

WE Capacitance
RY/BY Capacitance

I/O

I/O0 – I/O31 Capacitance

50 pF
50 pF
20 pF
50 pF
60 pF
50 pF
20 pF

Capacitance Guaranteed by design, but not tested.

DC Characteristics – CMOS Compatible

(TC = -55°C to +125°C, VCC = +4.5V to + 5.5V, Unless otherwise specified)

Parameter Sym Conditions Min Max Units

CC

CC -

10 µA
50 µA

10 µA
160 mA
240 mA

4 mA
4 mA

0.45 V
V

V

Input Load Current
A9 Leakage Current
Output Leakage Current
Vcc Active Read Current
Vcc Active Program/Erase Current
Vcc Standby Current
Vcc Standby Current (Reset)
Output Low Voltage
Output High Voltage

CC Lock-Out Voltage

Low V

Notes:

1. Not 100% tested.

IL

I

VCC = VCCMax., VIN = VCC or GND

LIT

I

VCC = VCCMax., A9 = +12V

LO

I

VCC = VCCMax., VIN = GND to VCC

CC1

I

(1)

I

CC2
CC3

I

CC4

I

OL

V

OH1

V

OH2

V
V

LKO 3.2 4.2 V

= VIL, OE = VIH

CE

= VIL, OE = VIH

CE

CC = VCCMax., CE = RESET = VCC ± 0.3V

V

CC = VCCMax., RESET = VCC ± 0.3V

V
VCC = VCCMin., IOL = 12 mA

CC = VCCMin., IOH = -2.5 mA

V

CC = VCCMin., IOH = -100 µA

V

0.85 x
V

V

0.4V

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