ON Semiconductor 2N5087-D Service Manual

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2N5087

Preferred Device

Amplifier Transistor

PNP Silicon

Features

• Pb−Free Packages are Available*

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3 COLLECTOR

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage V Collector−Base Voltage V Emitter−Base Voltage V Collector Current − Continuous I Total Device Dissipation @ TA = 25°C

Derate above 25°C Total Device Dissipation @ TC = 25°C

Derate above 25°C Operating and Storage Junction

Temperature Range

TJ, T

CEO CBO EBO

stg

50 Vdc 50 Vdc

3.0 Vdc 50 mAdc

625

5.0

1.5 12

−55 to +150 °C

mW/°C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Ambient R Thermal Resistance, Junction−to−Case R

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

200 °C/W

83.3 °C/W

TO−92 CASE 29 STYLE 1

BASE

1 EMITTER

STRAIGHT LEAD

BULK PACK

MARKING DIAGRAM

5087

AYWWG

BENT LEAD

TAPE & REEL

AMMO PACK

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

March, 2007 − Rev. 4

1 Publication Order Number:

A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

Device Package Shipping

2N5087 TO−92 5000 Units / Bulk 2N5087G TO−92

(Pb−Free)

2N5087RLRAG TO−92

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.

Preferred devices are recommended choices for future use and best overall value.

5000 Units / Bulk

2000/Tape & Reel

†

2N5087/D

2N5087

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 1)

Collector−Base Breakdown Voltage

Collector Cutoff Current

Emitter Cutoff Current

ON CHARACTERISTICS

DC Current Gain

(IC = 100 mAdc, VCE = 5.0 Vdc) (IC = 1.0 mAdc, VCE = 5.0 Vdc)

(IC = 10 mAdc, VCE = 5.0 Vdc) (Note 1)

Collector−Emitter Saturation Voltage

Base−Emitter On Voltage

(IC = 1.0 mAdc, VCE = 5.0 Vdc)

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 500 mAdc, VCE = 5.0 Vdc, f = 20 MHz)

Collector−Base Capacitance

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)

Small−Signal Current Gain

(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)

Noise Figure

(IC = 20 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz)

(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 3.0 kW, f = 1.0 kHz)

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

(IC = 1.0 mAdc, IB = 0)

(IC = 100 mAdc, IE = 0)

(VCB = 35 Vdc, IE = 0)

(VEB = 3.0 Vdc, IC = 0)

(IC = 10 mAdc, IB = 1.0 mAdc)

(BR)CEO

(BR)CBO

CBO

EBO

CE(sat)

BE(on)

50 −

Vdc

50 −

nAdc

− 50 nAdc

− 50

250 250 250

800

−

Vdc

− 0.3

Vdc

− 0.85

40 −

− 4.0

250 900

MHz

−

2.0

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2N5087

TYPICAL NOISE CHARACTERISTICS

(VCE = − 5.0 Vdc, TA = 25°C)

7.0

5.0

3.0

1.0 mA

, NOISE VOLTAGE (nV)

2.0

1.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k

IC = 10 mA

30 mA

100 mA

300 mA

f, FREQUENCY (Hz)

BANDWIDTH = 1.0 Hz

≈ 0

Figure 1. Noise Voltage

1.0M 500k

200k 100k

50k

20k 10k

5.0k

2.0k

1.0k

, SOURCE RESISTANCE (OHMS)

500

200 100

0.5 dB

1.0 dB

20 30 50 70 100 200 300 500 700 1.0k 10 20 30 50 70 100 200 300 500 700 1.0k

IC, COLLECTOR CURRENT (mA)

BANDWIDTH = 1.0 Hz

2.0 dB

3.0 dB

5.0 dB

1.0

7.0

5.0

3.0

2.0

1.0

0.7

0.5

, NOISE CURRENT (pA)

0.3

0.2

0.1 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k

IC = 1.0 mA

300 mA

100 mA

30 mA

10 mA

f, FREQUENCY (Hz)

BANDWIDTH = 1.0 Hz

RS ≈∞

Figure 2. Noise Current

1.0M 500k

200k 100k

50k

20k 10k

5.0k

2.0k

1.0k

, SOURCE RESISTANCE (OHMS)

500

200

100

0.5 dB

IC, COLLECTOR CURRENT (mA)

BANDWIDTH = 1.0 Hz

1.0 dB

2.0 dB

3.0 dB

5.0 dB

1.0M 500k

200k 100k

50k

20k 10k

5.0k

2.0k

1.0k

, SOURCE RESISTANCE (OHMS)

500

200

100

Figure 3. Narrow Band, 100 Hz

10 Hz to 15.7 kHz

0.5 dB

20 30 50 70 100 200 300 500 700 1.0k

IC, COLLECTOR CURRENT (mA)

Figure 5. Wideband

1.0 dB

2.0 dB

3.0 dB

5.0 dB

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Figure 4. Narrow Band, 1.0 kHz

Noise Figure is Defined as:

) 4KTRS) I

NF + 20 log

= Noise Voltage of the T ransistor referred to the input. (Figure 3)

= Noise Current of the Transistor referred to the input. (Figure 4)

= Boltzman’s Constant (1.38 x 10

= Temperature of the Source Resistance (°K)

= Source Resistance (Ohms)

4KTR

1ń2

−23

j/°K)

2N5087

TYPICAL STATIC CHARACTERISTICS

400

200

100

h , DC CURRENT GAIN

0.003

0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0

1.0

0.8

0.6

0.4

IC = 1.0 mA 10 mA 100 mA

50 mA

TJ = 125°C

25°C

−55°C

IC, COLLECTOR CURRENT (mA)

Figure 6. DC Current Gain

TA = 25°C

100

PULSE WIDTH = 300 ms

DUTY CYCLE ≤ 2.0%

VCE = 1.0 V VCE = 10 V

3.0

2.0

TA = 25°C

300 mA

5.0 7.0 10 20 30 50 70 100

IB = 400 mA

350 mA

250 mA

200 mA

150 mA

100 mA

0.2

, COLLECTOR−EMITTER VOLTAGE (VOLTS)

0.002

0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 5.0 10 15 20 25 30 35 40

1.4 TJ = 25°C

1.2

1.0

0.8

0.6

V, VOLTAGE (VOLTS)

0.4

0.2

0.1 0.2 0.5

IB, BASE CURRENT (mA)

Figure 7. Collector Saturation Region

@ IC/IB = 10

BE(sat)

@ VCE = 1.0 V

BE(on)

@ IC/IB = 10

CE(sat)

1.0 2.0 5.0 10 20

IC, COLLECTOR CURRENT (mA)

Figure 9. “On” Voltages

, COLLECTOR CURRENT (mA)

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

50 mA

Figure 8. Collector Characteristics

1.6 *APPLIES for IC/IB ≤ hFE/2

0.8

*qVC for V

0.8

1.6

, TEMPERATURE COEFFICIENTS (mV/ C)°θ

100

qVB for V

2.4

0.1 0.2 0.5

CE(sat)

1.0 2.0 5.0 10 20

IC, COLLECTOR CURRENT (mA)

25°C to 125°C

−55°C to 25°C

25°C to 125°C

−55°C to 25°C

50 100

Figure 10. Temperature Coefficients

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2N5087

TYPICAL DYNAMIC CHARACTERISTICS

500

300

200

100

70 50

t, TIME (ns)

7.0

5.0

500

300

200

td @ V

2.0 5.0 10 20 30 50

3.01.0

= 0.5 V

BE(off)

7.0 70 100

IC, COLLECTOR CURRENT (mA)

Figure 11. Turn−On Time

TJ = 25°C

VCE = 20 V

5.0 V

VCC = 3.0 V I

= 10

C/IB

= 25°C

1000

700 500

300

200

100

t, TIME (ns)

7.0

5.0

3.0

− 2.0−1.0

− 3.0

− 5.0 − 7.0

IC, COLLECTOR CURRENT (mA)

Figure 12. Turn−Off Time

− 20−10 − 30

VCC = − 3.0 V

= 10

C/IB

IB1 = I

TJ = 25°C

− 50 − 70

TJ = 25°C

−100

100

f, CURRENT−GAIN  BANDWIDTH PRODUCT (MHz)

0.5

0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50

IC, COLLECTOR CURRENT (mA)

Figure 13. Current−Gain — Bandwidth Product

7.0

5.0

3.0

2.0

1.0

, INPUT IMPEDANCE (k )Ω

0.7

0.5

0.3

0.2

0.1 0.2 0.5 IC, COLLECTOR CURRENT (mA)

2.0 5.0 10 20 501.0

VCE = −10 Vdc f = 1.0 kHz TA = 25°C

100

2.0

C, CAPACITANCE (pF)

1.0

0.1 0.2 0.5 1.0 2.0 5.0 10 20 500.05

200

VCE = 10 Vdc f = 1.0 kHz

100

TA = 25°C

7.0

5.0

h , OUTPUT ADMITTANCE ( mhos)

3.0

2.0

0.1 0.2 0.5

VR, REVERSE VOLTAGE (VOLTS)

Figure 14. Capacitance

2.0 5.0 10 20 501.0

IC, COLLECTOR CURRENT (mA)

100

Figure 15. Input Impedance

Figure 16. Output Admittance

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1.0

0.7

0.5

2N5087

D = 0.5

0.3

0.2

0.1

0.07

(NORMALIZED)

0.05

0.03

0.02

r(t) TRANSIENT THERMAL RESISTANCE

0.01

400

200

100

, COLLECTOR CURRENT (mA)

6.0

4.0

2.0

0.2

0.1

0.05

0.02

0.01

0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 20k

TJ = 150°C

CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT

4.0 6.0 8.0 10 20

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

SINGLE PULSE

TA = 25°C

= 25°C

1.0 ms

Figure 18. Active−Region Safe Operating Area

VCC = 30 V

, COLLECTOR CURRENT (nA)

−1

−2

−40

−20 0 + 20 +40 +60 +80 + 100 + 120 + 140 + 160

TJ, JUNCTION TEMPERATURE (°C)

CEO

CEX

@ V

t, TIME (ms)

Figure 17. Thermal Response

10 ms

The safe operating area curves indicate IC−VCE limits of

the transistor that must be observed for reliable operation.

100 ms

1.0 s

Collector load lines for specific circuits must fall below the limits indicated by the applicable curve.

The data of Figure 18 is based upon T TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided T may be calculated from the data in Figure 17. At high case or ambient temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown.

DESIGN NOTE: USE OF THERMAL RESPONSE DATA

A train of periodical power pulses can be represented by the model as shown in Figure 19. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 17 was calculated for various duty cycles.

To find Z 17 by the steady state value R

Example: The 2N5087 is dissipating 2.0 watts peak under the following conditions:

CBO

AND

BE(off)

= 3.0 V

Using Figure 17 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22.

The peak rise in junction temperature is therefore

DT = r(t) x P For more information, see ON Semiconductor Application

Note AN569/D, available from the Literature Distribution Center or on our website at www.onsemi.com.

FIGURE 19

(pk)

, multiply the value obtained from Figure

JA(t)

DUTY CYCLE, D = t1/t D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN569) Z

= r(t) w R

JA(t)

− TA = P

J(pk)

(pk)

= 150°C; TC or

J(pk)

≤ 150°C. T

J(pk)

t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2)

(pk)

x R

= 0.22 x 2.0 x 200 = 88°C.

JA(t)

100k

50k

J(pk)

Figure 19. Typical Collector Leakage Current

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2N5087

TO−92 (TO−226)

PACKAGE DIMENSIONS

CASE 29−11

ISSUE AM

SEATING PLANE

STRAIGHT LEAD

BULK PACK

SECTION X−X

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.

DIM MIN MAX MIN MAX

A 0.175 0.205 4.45 5.20 B 0.170 0.210 4.32 5.33 C 0.125 0.165 3.18 4.19 D 0.016 0.021 0.407 0.533 G 0.045 0.055 1.15 1.39 H 0.095 0.105 2.42 2.66 J 0.015 0.020 0.39 0.50 K 0.500 −−− 12.70 −−− L 0.250 −−− 6.35 −−− N 0.080 0.105 2.04 2.66 P −−− 0.100 −−− 2.54 R 0.115 −−− 2.93 −−− V 0.135 −−− 3.43 −−−

MILLIMETERSINCHES

BENT LEAD

TAPE & REEL

AMMO PACK

SECTION X−X

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.

MILLIMETERS

DIM MIN MAX

A 4.45 5.20 B 4.32 5.33 C 3.18 4.19 D 0.40 0.54

G 2.40 2.80

J 0.39 0.50 K 12.70 −−− N 2.04 2.66 P 1.50 4.00 R 2.93 −−− V 3.43 −−−

STYLE 1:

PIN 1. EMITTER

2. BASE

3. COLLECTOR

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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2N5087/D

ON Semiconductor 2N5087-D Service Manual

Specifications and Main Features

Frequently Asked Questions

User Manual