2N 2N5087-D Service Manual
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2N5087
Preferred Device
Amplifier Transistor
PNP Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating |
Symbol |
Value |
Unit |
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Collector−Emitter Voltage |
VCEO |
50 |
Vdc |
Collector−Base Voltage |
VCBO |
50 |
Vdc |
Emitter−Base Voltage |
VEBO |
3.0 |
Vdc |
Collector Current − Continuous |
IC |
50 |
mAdc |
Total Device Dissipation @ TA = 25°C |
PD |
625 |
mW |
Derate above 25°C |
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5.0 |
mW/°C |
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Total Device Dissipation @ TC = 25°C |
PD |
1.5 |
W |
Derate above 25°C |
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12 |
mW/°C |
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Operating and Storage Junction |
TJ, Tstg |
−55 to +150 |
°C |
Temperature Range |
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THERMAL CHARACTERISTICS
Characteristic |
Symbol |
Max |
Unit |
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Thermal Resistance, Junction−to−Ambient |
RqJA |
200 |
°C/W |
Thermal Resistance, Junction−to−Case |
RqJC |
83.3 |
°C/W |
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
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3 COLLECTOR
2 BASE
1 EMITTER
TO−92
CASE 29
STYLE 1
1 |
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1 |
2 3 |
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3 |
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STRAIGHT LEAD |
BENT LEAD |
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BULK PACK |
TAPE & REEL |
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AMMO PACK |
MARKING DIAGRAM
2N
5087 AYWW G
G
A |
= Assembly Location |
Y |
= Year |
WW = Work Week
G = Pb−Free Package (Note: Microdot may be in either location)
ORDERING INFORMATION
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Device |
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Package |
Shipping† |
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2N5087 |
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TO−92 |
5000 Units / Bulk |
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2N5087G |
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TO−92 |
5000 Units / Bulk |
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(Pb−Free) |
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2N5087RLRAG |
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TO−92 |
2000/Tape & Reel |
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(Pb−Free) |
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†For information on tape and reel specifications, |
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including part orientation and tape sizes, please |
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refer to our Tape and Reel Packaging Specifications |
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*For additional information on our Pb−Free strategy and soldering details, please |
Brochure, BRD8011/D. |
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download the ON Semiconductor Soldering and Mounting Techniques Reference |
Preferred devices are recommended choices for future use |
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Manual, SOLDERRM/D. |
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and best overall value. |
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♥ Semiconductor Components Industries, LLC, 2007 |
1 |
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Publication Order Number: |
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March, 2007 − Rev. 4 |
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2N5087/D |
2N5087
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic |
Symbol |
Min |
Max |
Unit |
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OFF CHARACTERISTICS |
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Collector−Emitter Breakdown Voltage (Note 1) |
V(BR)CEO |
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Vdc |
(IC = 1.0 mAdc, IB = 0) |
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50 |
− |
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Collector−Base Breakdown Voltage |
V(BR)CBO |
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Vdc |
(IC = 100 mAdc, IE = 0) |
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50 |
− |
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Collector Cutoff Current |
ICBO |
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nAdc |
(VCB = 35 Vdc, IE = 0) |
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50 |
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Emitter Cutoff Current |
IEBO |
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nAdc |
(VEB = 3.0 Vdc, IC = 0) |
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50 |
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ON CHARACTERISTICS |
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DC Current Gain |
hFE |
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− |
(IC = 100 mAdc, VCE = 5.0 Vdc) |
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250 |
800 |
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(IC = 1.0 mAdc, VCE = 5.0 Vdc) |
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250 |
− |
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(IC = 10 mAdc, VCE = 5.0 Vdc) (Note 1) |
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250 |
− |
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Collector−Emitter Saturation Voltage |
VCE(sat) |
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Vdc |
(IC = 10 mAdc, IB = 1.0 mAdc) |
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− |
0.3 |
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Base−Emitter On Voltage |
VBE(on) |
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Vdc |
(IC = 1.0 mAdc, VCE = 5.0 Vdc) |
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− |
0.85 |
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SMALL−SIGNAL CHARACTERISTICS |
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Current−Gain − Bandwidth Product |
fT |
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MHz |
(IC = 500 mAdc, VCE = 5.0 Vdc, f = 20 MHz) |
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40 |
− |
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Collector−Base Capacitance |
Ccb |
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pF |
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) |
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4.0 |
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Small−Signal Current Gain |
hfe |
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− |
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) |
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250 |
900 |
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Noise Figure |
NF |
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dB |
(IC = 20 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz) |
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− |
2.0 |
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(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 3.0 kW, f = 1.0 kHz) |
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2.0 |
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1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
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2
2N5087
TYPICAL NOISE CHARACTERISTICS
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(VCE = −5.0 Vdc, TA = 25°C) |
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10 |
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1.0 |
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BANDWIDTH = 1.0 Hz |
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7.0 |
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BANDWIDTH = 1.0 Hz |
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RS ≈ 0 |
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7.0 |
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5.0 |
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RS |
≈ ∞ |
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(nV) |
5.0 |
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IC = 10 mA |
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(pA) |
3.0 |
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IC = 1.0 mA |
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VOLTAGE |
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CURRENT |
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2.0 |
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30 mA |
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1.0 |
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300 mA |
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3.0 |
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, NOISE |
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100 mA |
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,NOISE |
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0.7 |
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100 mA |
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2.0 |
1.0 mA |
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300 mA |
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0.5 |
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n |
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n |
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e |
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I |
0.3 |
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30 mA |
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0.2 |
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10 mA |
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1.0 |
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0.1 |
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10 |
20 |
50 |
100 |
200 |
500 |
1.0 k |
2.0 k |
5.0 k |
10 k |
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10 |
20 |
50 |
100 |
200 |
500 |
1.0 k |
2.0 k |
5.0 k |
10 k |
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f, FREQUENCY (Hz) |
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f, FREQUENCY (Hz) |
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Figure 1. Noise Voltage |
Figure 2. Noise Current |
RS, SOURCE RESISTANCE (OHMS)
1.0 M |
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1.0 M |
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500 k |
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BANDWIDTH = 1.0 Hz |
(OHMS) |
500 k |
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BANDWIDTH = 1.0 Hz |
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100 k |
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100 k |
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200 k |
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RESISTANCE |
200 k |
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50 k |
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50 k |
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20 k |
0.5 dB |
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20 k |
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10 k |
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10 k |
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0.5 dB |
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5.0 k |
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SOURCE |
5.0 k |
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1.0 dB |
2.0 dB |
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1.0 k |
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1.0 k |
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2.0 k |
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2.0 k |
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1.0 dB |
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2.0 dB |
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500 |
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500 |
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3.0 dB |
R |
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3.0 dB |
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200 |
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5.0 dB |
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200 |
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5.0 dB |
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100 |
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100 |
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10 |
20 |
30 |
50 |
70 |
100 |
200 300 |
500 700 |
1.0 k |
10 |
20 |
30 |
50 |
70 |
100 |
200 |
300 |
500 700 |
1.0 k |
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IC, COLLECTOR CURRENT (mA) |
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IC, COLLECTOR CURRENT (mA) |
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Figure 3. Narrow Band, 100 Hz |
Figure 4. Narrow Band, 1.0 kHz |
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1.0 M |
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(OHMS) |
500 k |
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10 Hz to 15.7 kHz |
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200 k |
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100 k |
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RESISTANCE |
50 k |
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20 k |
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10 k |
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0.5 dB |
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5.0 k |
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SOURCE |
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2.0 k |
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1.0 dB |
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1.0 k |
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2.0 dB |
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, |
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S |
500 |
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R |
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3.0 dB |
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200 |
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5.0 dB |
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100 |
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10 |
20 |
30 |
50 |
70 |
100 |
200 |
300 |
500 |
700 |
1.0 k |
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IC, COLLECTOR CURRENT (mA) |
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Noise Figure is Defined as:
NF + 20 log10 en2 ) 4KTRS ) In 2RS2 1 2 4KTRS
en = Noise Voltage of the Transistor referred to the input. (Figure 3)
In = Noise Current of the Transistor referred to the input. (Figure 4)
K = Boltzman’s Constant (1.38 x 10−23 j/°K)
T = Temperature of the Source Resistance (°K) RS = Source Resistance (Ohms)
Figure 5. Wideband
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3