2N 2N5087-D Service Manual

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2N5087

Preferred Device

Amplifier Transistor

PNP Silicon

Features

Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

 

 

 

 

Collector−Emitter Voltage

VCEO

50

Vdc

Collector−Base Voltage

VCBO

50

Vdc

Emitter−Base Voltage

VEBO

3.0

Vdc

Collector Current − Continuous

IC

50

mAdc

Total Device Dissipation @ TA = 25°C

PD

625

mW

Derate above 25°C

 

5.0

mW/°C

 

 

 

 

Total Device Dissipation @ TC = 25°C

PD

1.5

W

Derate above 25°C

 

12

mW/°C

 

 

 

 

Operating and Storage Junction

TJ, Tstg

−55 to +150

°C

Temperature Range

 

 

 

 

 

 

 

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

 

 

 

 

Thermal Resistance, Junction−to−Ambient

RqJA

200

°C/W

Thermal Resistance, Junction−to−Case

RqJC

83.3

°C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

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3 COLLECTOR

2 BASE

1 EMITTER

TO−92

CASE 29

STYLE 1

1

 

1

2 3

2

 

3

STRAIGHT LEAD

BENT LEAD

BULK PACK

TAPE & REEL

 

 

AMMO PACK

MARKING DIAGRAM

2N

5087 AYWW G

G

A

= Assembly Location

Y

= Year

WW = Work Week

G = Pb−Free Package (Note: Microdot may be in either location)

ORDERING INFORMATION

 

 

Device

 

Package

Shipping

 

 

2N5087

 

TO−92

5000 Units / Bulk

 

 

 

 

 

 

 

 

2N5087G

 

TO−92

5000 Units / Bulk

 

 

 

 

(Pb−Free)

 

 

 

 

 

 

 

 

 

2N5087RLRAG

 

TO−92

2000/Tape & Reel

 

 

 

 

(Pb−Free)

 

 

 

 

 

 

 

 

†For information on tape and reel specifications,

 

 

including part orientation and tape sizes, please

 

 

refer to our Tape and Reel Packaging Specifications

*For additional information on our Pb−Free strategy and soldering details, please

Brochure, BRD8011/D.

 

 

 

 

 

download the ON Semiconductor Soldering and Mounting Techniques Reference

Preferred devices are recommended choices for future use

Manual, SOLDERRM/D.

 

and best overall value.

 

 

 

 

 

 

 

 

Semiconductor Components Industries, LLC, 2007

1

 

 

Publication Order Number:

March, 2007 − Rev. 4

 

 

 

 

2N5087/D

2N5087

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

 

 

 

 

 

OFF CHARACTERISTICS

 

 

 

 

 

 

 

 

 

Collector−Emitter Breakdown Voltage (Note 1)

V(BR)CEO

 

 

Vdc

(IC = 1.0 mAdc, IB = 0)

 

50

 

Collector−Base Breakdown Voltage

V(BR)CBO

 

 

Vdc

(IC = 100 mAdc, IE = 0)

 

50

 

Collector Cutoff Current

ICBO

 

 

nAdc

(VCB = 35 Vdc, IE = 0)

 

50

 

Emitter Cutoff Current

IEBO

 

 

nAdc

(VEB = 3.0 Vdc, IC = 0)

 

50

 

ON CHARACTERISTICS

 

 

 

 

 

 

 

 

 

DC Current Gain

hFE

 

 

(IC = 100 mAdc, VCE = 5.0 Vdc)

 

250

800

 

(IC = 1.0 mAdc, VCE = 5.0 Vdc)

 

250

 

(IC = 10 mAdc, VCE = 5.0 Vdc) (Note 1)

 

250

 

Collector−Emitter Saturation Voltage

VCE(sat)

 

 

Vdc

(IC = 10 mAdc, IB = 1.0 mAdc)

 

0.3

 

Base−Emitter On Voltage

VBE(on)

 

 

Vdc

(IC = 1.0 mAdc, VCE = 5.0 Vdc)

 

0.85

 

SMALL−SIGNAL CHARACTERISTICS

 

 

 

 

 

 

 

 

 

Current−Gain − Bandwidth Product

fT

 

 

MHz

(IC = 500 mAdc, VCE = 5.0 Vdc, f = 20 MHz)

 

40

 

Collector−Base Capacitance

Ccb

 

 

pF

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)

 

4.0

 

Small−Signal Current Gain

hfe

 

 

(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)

 

250

900

 

Noise Figure

NF

 

 

dB

(IC = 20 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz)

 

2.0

 

(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 3.0 kW, f = 1.0 kHz)

 

2.0

 

1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.

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2

2N 2N5087-D Service Manual

2N5087

TYPICAL NOISE CHARACTERISTICS

 

 

 

 

 

 

 

 

(VCE = −5.0 Vdc, TA = 25°C)

 

 

 

 

 

 

 

 

 

 

10

 

 

 

 

 

 

 

 

 

 

1.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

BANDWIDTH = 1.0 Hz

 

 

7.0

 

 

 

 

 

BANDWIDTH = 1.0 Hz

 

 

 

 

 

 

 

 

 

RS 0

 

 

 

 

 

 

 

 

 

 

 

7.0

 

 

 

 

 

 

 

 

 

5.0

 

 

 

 

 

 

RS

≈ ∞

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(nV)

5.0

 

 

IC = 10 mA

 

 

 

 

 

(pA)

3.0

 

 

 

IC = 1.0 mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VOLTAGE

 

 

 

 

 

 

 

 

 

CURRENT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

30 mA

 

 

 

 

 

1.0

 

 

 

300 mA

 

 

 

 

 

3.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

, NOISE

 

 

 

100 mA

 

 

 

 

 

,NOISE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.7

 

 

 

100 mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2.0

1.0 mA

 

 

300 mA

 

 

 

 

 

0.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

n

 

 

 

 

 

 

 

 

 

 

n

 

 

 

 

 

 

 

 

 

 

 

e

 

 

 

 

 

 

 

 

 

 

I

0.3

 

 

 

 

30 mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.2

 

 

 

 

10 mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1.0

 

 

 

 

 

 

 

 

 

 

0.1

 

 

 

 

 

 

 

 

 

 

 

10

20

50

100

200

500

1.0 k

2.0 k

5.0 k

10 k

 

10

20

50

100

200

500

1.0 k

2.0 k

5.0 k

10 k

 

 

 

 

f, FREQUENCY (Hz)

 

 

 

 

 

 

 

f, FREQUENCY (Hz)

 

 

 

 

Figure 1. Noise Voltage

Figure 2. Noise Current

RS, SOURCE RESISTANCE (OHMS)

1.0 M

 

 

 

 

 

 

 

 

1.0 M

 

 

 

 

 

 

 

 

 

500 k

 

 

 

 

 

BANDWIDTH = 1.0 Hz

(OHMS)

500 k

 

 

 

 

 

BANDWIDTH = 1.0 Hz

 

100 k

 

 

 

 

 

 

 

100 k

 

 

 

 

 

 

 

 

 

200 k

 

 

 

 

 

 

 

RESISTANCE

200 k

 

 

 

 

 

 

 

 

 

50 k

 

 

 

 

 

 

 

50 k

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

20 k

0.5 dB

 

 

 

 

 

 

 

20 k

 

 

 

 

 

 

 

 

 

10 k

 

 

 

 

 

 

 

10 k

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.5 dB

 

 

 

 

5.0 k

 

 

 

 

 

 

 

SOURCE

5.0 k

 

 

 

 

 

 

 

 

 

 

1.0 dB

2.0 dB

 

 

 

 

 

 

 

 

 

1.0 k

 

 

 

1.0 k

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2.0 k

 

 

 

 

 

 

 

 

2.0 k

 

 

 

 

 

 

1.0 dB

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

,

 

 

 

 

 

 

 

2.0 dB

 

 

500

 

 

 

 

 

 

 

S

500

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

3.0 dB

R

 

 

 

 

 

 

3.0 dB

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

200

 

 

 

 

 

 

5.0 dB

 

200

 

 

 

 

 

 

 

5.0 dB

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

100

 

 

 

 

 

 

 

 

100

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

10

20

30

50

70

100

200 300

500 700

1.0 k

10

20

30

50

70

100

200

300

500 700

1.0 k

 

 

 

IC, COLLECTOR CURRENT (mA)

 

 

 

 

 

IC, COLLECTOR CURRENT (mA)

 

 

Figure 3. Narrow Band, 100 Hz

Figure 4. Narrow Band, 1.0 kHz

 

1.0 M

 

 

 

 

 

 

 

 

 

 

(OHMS)

500 k

 

 

 

 

 

 

10 Hz to 15.7 kHz

 

200 k

 

 

 

 

 

 

 

 

 

 

100 k

 

 

 

 

 

 

 

 

 

 

RESISTANCE

50 k

 

 

 

 

 

 

 

 

 

 

20 k

 

 

 

 

 

 

 

 

 

 

10 k

 

 

0.5 dB

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

5.0 k

 

 

 

 

 

 

 

 

 

 

SOURCE

 

 

 

 

 

 

 

 

 

 

2.0 k

 

 

 

 

 

 

1.0 dB

 

 

1.0 k

 

 

 

 

 

 

 

2.0 dB

 

 

,

 

 

 

 

 

 

 

 

 

 

S

500

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

R

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

3.0 dB

 

 

 

200

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

5.0 dB

 

 

100

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

10

20

30

50

70

100

200

300

500

700

1.0 k

 

 

 

 

IC, COLLECTOR CURRENT (mA)

 

 

 

Noise Figure is Defined as:

NF + 20 log10 en2 ) 4KTRS ) In 2RS2 1 2 4KTRS

en = Noise Voltage of the Transistor referred to the input. (Figure 3)

In = Noise Current of the Transistor referred to the input. (Figure 4)

K = Boltzman’s Constant (1.38 x 10−23 j/°K)

T = Temperature of the Source Resistance (°K) RS = Source Resistance (Ohms)

Figure 5. Wideband

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3

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