ZETEX ZXMP6A17DN8 Technical data
查询ZXMP6A17DN8TA供应商
DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
= -60V; R
DESCRIPTION
This new generation of high cell density planar MOSFETs from Zetex utilizes a
unique structure that combines the benefits of low on-resistance with fast
switching speed. Thismakes them ideal forhighefficiency, low voltage, power
management applications.
= 0.125 ;ID= -3.1A
DS(ON)
ZXMP6A17DN8
FEATURES
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
Low profile SOIC package
•
APPLICATIONS
•
DC-DC Converters
•
Power Management functions
•
Disconnect switches
•
Motor control
ORDERING INFORMATION
DEVICE REEL TAPE
ZXMP6A17DN8TA 7
ZXMP6A17DN8TC 13’‘ 12mm 2500 units
WIDTH
’‘ 12mm 500 units
QUANTITY
PER REEL
DEVICE MARKING
ZXMP
6A17D
SO8
PINOUT
PROVISIONAL ISSUE A - SEPTEMBER 2002
Top view
1
ZXMP6A17DN8
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain Current@V
=10V; TA=25⬚C (b)(d)
GS
@V
=10V; TA=70⬚C (b)(d)
GS
@V
=10V; TA=25⬚C (a)(d)
GS
Pulsed Drain Current (c) I
Continuous Source Current (Body Diode)(b) I
Pulsed Source Current (Body Diode)(c) I
Power Dissipation at TA=25°C (a)(d)
I
P
DSS
GS
D
DM
S
SM
D
Linear Derating Factor
Power Dissipation at TA=25°C (a)(e)
P
D
Linear Derating Factor
Power Dissipation at TA=25°C (b)(d)
P
D
Linear Derating Factor
Operating and Storage Temperature Range T
j:Tstg
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a)(d) R
Junction to Ambient (b)(e) R
Junction to Ambient (b)(d) R
Notes
(a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions.
(b) For a dual device surface mounted on FR4 PCB measured at t ⱕ10 sec.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10µs - pulse width limited by maximum junction temperature.
(d) For a dual device with one active die.
(e) For dual device with 2 active die running at equal power.
θJA
θJA
θJA
-60 V
⫾20 V
-3.1
-2.4
-2.3
-11.1 A
-3.0 A
-11.1 A
1.25
10
mW/°C
1.81
14.5
mW/°C
2.15
17
mW/°C
-55 to +150 °C
100 °C/W
70 °C/W
60 °C/W
A
A
A
W
W
W
PROVISIONAL ISSUE A - SEPTEMBER 2002
2
CHARACTERISTICS
ZXMP6A17DN8
R
DS(on)
10
Limit ed
1
DC
100m
Drain Current (A)
10m
D
-I
1s
100ms
Singl e Pulse
T
=25°C
amb
Oneactivedie
1 10 100
10ms
1ms
100µs
-VDSDrai n-Source Volt age (V)
Safe Operating Area
110
100
Thermal Resistance (°C/W)
T
=25°C
amb
Oneactivedie
90
80
70
D=0. 5
60
50
40
D=0. 2
30
20
10
0
100µ 1m 10m 100m 1 10 100 1k
Singl e Pulse
D=0.05
D=0. 1
Pulse Width (s)
Transient Thermal Impedance
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
Oneactivedie
0.4
0.2
0.0
0 20 40 60 80 100 120 140 160
Max Power Dissipation (W)
Temperature (°C)
Twoactivedie
Derating Curve
Singl e Pulse
=25°C
T
100
10
1
Max i mu m P ow er ( W)
100µ 1m 10m 100m 1 10 100 1k
amb
Oneactivedie
Pulse Width (s)
Pulse Power Dissipation
PROVISIONAL ISSUE A - SEPTEMBER 2002
3
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