60V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN6A11DN8
SUMMARY
V
(BR)DSS
= 60V; R
= 0.14 ID= 2.7A
DS(ON)
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilises a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management applications.
FEATURES
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
Low profile SO8 package
•
APPLICATIONS
•
DC - DC Converters
•
Power Management Functions
•
Disconnect switches
•
Motor control
SO8
ORDERING INFORMATION
DEVICE REEL
SIZE
ZXMN6A11DN8TA 7” 12mm 500 units
ZXMN6A11DN8TC 13” 12mm 2500 units
TAPE
WIDTH
QUANTITY
PER REEL
DEVICE MARKING
•
ZXMN
6A11D
ISSUE 1 - MARCH 2002
Top View
1
ZXMN6A11DN8
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate Source Voltage V
Continuous Drain Current VGS=10V; TA=25°C(b)
VGS=10V; TA=70°C(b)
VGS=10V; TA=25°C(a)
Pulsed Drain Current (c) I
Continuous Source Current (Body Diode) (b) I
Pulsed Source Current (Body Diode)(c) I
Power Dissipation at TA=25°C (a)(d)
Linear Derating Factor
Power Dissipation at TA=25°C (a)(e)
Linear Derating Factor
Power Dissipation at TA=25°C (b)(d)
Linear Derating Factor
Operating and Storage Temperature Range Tj:T
THERMAL RESISTANCE
I
D
DM
S
SM
P
P
P
DSS
GS
D
D
D
stg
60 V
⫾20 V
2.7
2.2
2.1
8.3 A
3.2 A
8.3 A
1.25
10
1.8
14
2.1
17
-55 to +150 °C
mW
mW/°C
mW
mW/°C
mW
mW/°C
A
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a)(d)
Junction to Ambient (a)(e)
Junction to Ambient (b)(d)
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10µs - pulse width limited by maximum junction temperature.
(d) For device with one active die
(e) For device with two active die running at equal power.
R
R
R
θJA
θJA
θJA
100 °C/W
70 °C/W
60 °C/W
ISSUE 1 - MARCH 2002
2