ZETEX ZXMN6A09K Technical data
ZXMN6A09K
60V N-CHANNEL ENHANCEMENT MODE MOSFET IN DPAK
SUMMARY
V
(BR)DSS
=60V : R
DESCRIPTION
This new generation of Trench MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage power
management applications.
=0.045 ; ID=11.2A
DS(on)
FEATURES
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
• D-Pak (T0-252) package
APPLICATIONS
•
DC-DC Converters
•
Power Management functions
•
Disconnect switches
•
Motor control
ORDERING INFORMATION
DEVICE REEL
SIZE
ZXMN6A09KTC 13” 16mm 2500 units
TAPE
WIDTH
QUANTITY PER
REEL
DEVICE MARKING
•
ZXMN
6A09K
K
A
P
D
PINOUT
ISSUE 4 - JANUARY 2005
TOP VIEW
1
SEMICONDUCTORS
ZXMN6A09K
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage V
Gate-source voltage V
Continuous drain current @ V
=10V; TA=25°C
GS
@VGS=10V; TA=70°C
@VGS=10V; TA=25°C
Pulsed drain current
(c)
Continuous source current (body diode)
Pulsed source current (body diode)
Power dissipation at T
=25°C
A
(c)
(a)
(b)
(b)
(a)
(b)
I
I
I
I
P
DSS
GS
D
DM
S
SM
D
Linear derating factor
Power dissipation at T
=25°C
A
(b)
P
D
Linear derating factor
Power dissipation at T
=25°C
A
(d)
P
D
Linear derating factor
Operating and storage temperature range T
j,Tstg
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to ambient
Junction to ambient
Junction to ambient
(a)
(b)
(d)
R
R
R
⍜JA
⍜JA
⍜JA
60 V
±20 V
11.2
9.0
7.3
40 A
10.8 A
40 A
4.3
34.4
mW/°C
10.1
80.8
mW/°C
2.15
17.2
mW/°C
-55 to +150 °C
29 °C/W
12.3 °C/W
58 °C/W
A
W
W
W
NOTES
(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t ⱕ 10 sec.
(c) Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D=0.02 pulse width=300s - pulse width limited by maximum junction temperature.
(d) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
ISSUE 4 - JANUARY 2005
SEMICONDUCTORS
2
TYPICAL CHARACTERISTICS
ZXMN6A09K
ISSUE 4 - JANUARY 2005
3
SEMICONDUCTORS
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