Zetex ZXMN6A09DN8TC, ZXMN6A09DN8TA Datasheet
ZXMN6A09DN8
DUAL 60V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast
switching speed. This makes them ideal for high efficiency, low voltage,
power management applications.
FEATURES
•
•
•
•
•
APPLICATIONS
• DC - DC Converters
=60V; R
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
DS(ON)
=0.045⍀D=5.2A
SO8
•
Power Management Functions
•
Disconnect switches
•
Motor control
ORDERING INFORMATION
DEVICE REEL SIZE TAPE WIDTH QUANTITY
ZXMN6A09DN8TA 7” 12mm 500 units
ZXMN6A09DN8TC 13” 12mm 2500 units
DEVICE MARKING
•
ZXMN
6A09D
PROVISIONAL ISSUE D - AUGUST 2001
PER REEL
Top View
1
ZXMN6A09DN8
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate Source Voltage V
Continuous Drain Current (V
=10V; TA=25°C)(b)(d)
GS
(V
=10V; TA=70°C)(b)(d)
GS
(V
=10V; TA=25°C)(a)(d)
GS
Pulsed Drain Current (c) I
Continuous Source Current (Body Diode) (b) I
Pulsed Source Current (Body Diode)(c) I
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
=25°C (a)(d)
A
=25°C (a)(e)
A
=25°C (b)(d)
A
Operating and Storage Temperature Range T
I
D
DM
S
SM
P
P
P
DSS
GS
D
D
D
j:Tstg
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a)(d) R
Junction to Ambient (a)(e) R
Junction to Ambient (b)(d) R
θJA
θJA
θJA
60 V
⫾20 V
5.2
4.1
3.9
17.6 A
3.5 A
15 A
1.25
10
mW/°C
1.81
14.5
mW/°C
2.16
17.3
mW/°C
-55 to +150 °C
100 °C/W
69 °C/W
58 °C/W
A
W
W
W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10µs - pulse width limited by maximum
junction temperature.
(d) For device with one active die
(e) For device with two active die running at equal power.
PROVISIONAL ISSUE D - AUGUST 2001
2
THERMAL CHARACTERISTICS
ZXMN6A09DN8
R
DS(on)
10
Limit
1
DC
100m
Drain Current (A)
10m
D
I
100m 1 10 100
1s
100ms
Single Puls e
T
=25˚C
amb
One active die
10ms
1ms
VDS Drain-Source Voltage (V)
100µs
Safe Operating Area
110
T
100
Thermal Resistance (˚C/W)
=25˚C
amb
One active die
90
80
70
D=0.5
60
50
40
D=0.2
30
20
10
0
100µ 1m 10m 100m 1 10 100 1k
Single Puls e
D=0.05
D=0.1
Pulse Width (s)
Transient Thermal Impedance
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
One active die
0.4
0.2
0.0
0 20 40 60 80 100 120 140 160
Max Power Dissipation (W)
Temperature (˚C)
Two active di e
Derating Curve
Single Puls e
T
=25˚C
100
10
1
Maximum Power (W)
100µ 1m 10m 100m 1 10 100 1k
amb
One active die
Pulse Width (s)
Pulse Power Dissipation
PROVISIONAL ISSUE D - AUGUST 2001
3
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