ZETEX ZXMN6A07Z Technical data

查询ZXMN6A07Z供应商
60V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY V
(BR)DSS
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
= 100V; R
= 0.4 ID= 1.9A
DS(ON)
ZXMN6A07Z
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT89 package
APPLICATIONS
DC - DC Converters
Power Management Functions
Relay and solenoid driving
Motor control
ORDERING INFORMATION
DEVICE REEL
SIZE
ZXMN6A07ZTA 7” 12mm 1000 units
TAPE
WIDTH
QUANTITY
PER REEL
DEVICE MARKING
7N6
T
O
S
Top View
9
8
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ZXMN6A07Z
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V Gate Source Voltage V Continuous Drain Current VGS=10V; TA=25°C (b)
VGS=10V; TA=70°C (b)
VGS=10V; TA=25°C (a) Pulsed Drain Current (c) I Continuous Source Current (Body Diode) (b) I Pulsed Source Current (Body Diode) (c) I Power Dissipation at TA=25°C (a)
Linear Derating Factor Power Dissipation at TA=25°C (b)
Linear Derating Factor Operating and Storage Temperature Range Tj:T
I
D
DM S SM
P
P
DSS GS
D
D
stg
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a)
Junction to Ambient (b)
R
R
θJA
θJA
60 V
20 V
1.9
1.5
1.4 6A
2.4 A 6A
1.5
12
2.6
21
-55 to +150 °C
83.3 °C/W
47.4 °C/W
mW/°C
mW/°C
A
W
W
NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t10 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10s - pulse width limited by maximum junction temperature. Refer to
transient Thermal Impedance graph
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CHARACTERISTICS
ZXMN6A07Z
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ZXMN6A07Z
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. STATIC
Drain-Source Breakdown Voltage V Zero Gate Voltage Drain Current I Gate-Body Leakage I Gate-Source Threshold Voltage V Static Drain-Source On-State Resistance
(1) Forward Transconductance (1)(3) g DYNAMIC (3) Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C SWITCHING(2) (3) Turn-On Delay Time t Rise Time t Turn-Off Delay Time t Fall Time t Gate Charge Q
Total Gate Charge Q Gate-Source Charge Q Gate-Drain Charge Q
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) V
Reverse Recovery Time (3) t Reverse Recovery Charge (3) Q
NOTES (1) Measured under pulsed conditions. Width=300µs. Duty cycle 2% . (2) Switching characteristics are independent of operating junction temperature.
= 25°C unless otherwise stated).
A
(BR)DSS DSS GSS
GS(th)
R
DS(on)
fs
iss
oss
rss
d(on) r d(off) f
g
g gs gd
SD
rr
rr
60 V ID=250A, VGS=0V
1.0 AVDS=60V, VGS=0V 60 nA VGS=20V, VDS=0V
1.0 3.0 V ID=250A, VDS=V
0.3 0.40
0.55
2.3 S VDS=15V,ID=1.8A
166 pF
19.5 pF
8.7 pF
1.8 ns
1.4 ns
4.9 ns
2.0 ns
1.65 nC VDS= 30V, VGS=5V
3.2 nC
0.67 nC
0.82 nC
0.85 0.95 V TJ=25°C, IS=1.5A,
20.5 ns TJ=25°C, IF=1.0A,
21.3 nC
⍀ ⍀
VGS=10V, ID=1.8A VGS=4.5V, ID=1.3A
VDS=40V,VGS=0V, f=1MHz
VDD=30V, ID=1.8A RG=6.0,VGS=10V
ID= 1.8A
VDS=30V,VGS=10V, I
D=1.8A
VGS=0V
di/dt= 100A/µs
(3) For design aid only, not subject to production testing.
GS
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TYPICAL CHARACTERISTICS
ZXMN6A07Z
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ZXMN6A07Z
TYPICAL CHARACTERISTICS
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ZXMN6A07Z
PACKAGE DIMENSIONS
A H
K
D B
G
N
DIM
A 2.67 3.05 0.105 0.120
B 1.20 1.40 0.047 0.055
C 1.10 0.043
D 0.37 0.53 0.0145 0.021
F 0.085 0.15 0.0033 0.0059
G NOM 1.9 NOM 0.075
K 0.01 0.10 0.0004 0.004
L 2.10 2.50 0.0825 0.0985
N
Millimetres Inches
Min Max Min Max
NOM 0.95 NOM 0.037
PAD LAYOUT DETAILS
C
2.4
4.0
F
1.5
1.2 1.0 1.2
© Zetex plc 2002
Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4422 Fax: (44) 161 622 4420
These offices are supported by agents and distributors in major countries world-wide. This publicationis issued toprovide outline informationonly which (unlessagreed by theCompany in writing)may not beused, applied orreproduced
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Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49
www.zetex.com
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USA Telephone: (631) 360 2222 Fax: (631) 360 8222
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